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    C 4242 TRANSISTOR Search Results

    C 4242 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    C 4242 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor C 4242

    Abstract: D 4242 transistor H 4242 transistor 4242 transistor D 4242 C 4242 transistor IC D 4242 H 4242 transistor 4242 TLE 4242 G
    Text: Adjustable LED Driver TLE 4242 G Features • • • • • • • • • • Adjustable constant current up to 500 mA ±5% Wide input voltage range up to 42 V Low drop voltage Open load detection Overtemperature protection Short circuit proof Reverse polarity proof


    Original     		PDF P-TO263-7-1 transistor C 4242 D 4242 transistor H 4242 transistor 4242 transistor D 4242 C 4242 transistor IC D 4242 H 4242 transistor 4242 TLE 4242 G

    D 4242

    Abstract: transistor C 4242 IC D 4242 H 4242 transistor H 4242 P-TO263-7-1 D 4242 transistor C 4242 transistor TO263-7 C 4242
    Text: Adjustable LED Driver TLE 4242 G Features • • • • • • • • Adjustable constant current up to 500 mA ±5% Wide input voltage range up to 42 V Low drop voltage Open load detection Overtemperature protection Short circuit proof Reverse polarity proof


    Original     		PDF P-TO263-7-1 D 4242 transistor C 4242 IC D 4242 H 4242 transistor H 4242 P-TO263-7-1 D 4242 transistor C 4242 transistor TO263-7 C 4242

    4269g

    Abstract: IC D 4242 D 4242 transistor transistor C 4242 H 4242 transistor TLE4242 infineon dragon transistor 4242 C 4242 transistor w57b
    Text: Adjustable LED Driver TLE 4242 G Target Data Features • • • • • • • • Adjustable constant current up to 500mA ±5% Wide input voltage range up to 42V Low drop voltage Open load detection Overtemperature protection Short circuit proof Reverse polarity proof


    Original     		PDF 500mA P-TO263-7-1 P-TO-263-7-1 4269g IC D 4242 D 4242 transistor transistor C 4242 H 4242 transistor TLE4242 infineon dragon transistor 4242 C 4242 transistor w57b

    D 4242

    Abstract: transistor C 4242 datasheet C 4242 FON QFN marking lt 1173 c4242 0023u
    Text: LTC4242 Dual Slot Hot Swap Controller for PCI Express U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Allows Live Insertion into PCI Express Backplane Controls Two Independent PCI Express Slots Independent Control of Main and Auxiliary Supplies


    Original     		PDF LTC4242 38-Lead 36-Lead LTC4215 LTC4216 LTC4221 LTC4241 4242f D 4242 transistor C 4242 datasheet C 4242 FON QFN marking lt 1173 c4242 0023u

    pc diagnostic card

    Abstract: No abstract text available
    Text: LTC4242 Dual Slot Hot Swap Controller for PCI Express U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Allows Live Insertion into PCI Express Backplane Controls Two Independent PCI Express Slots Independent Control of Main and Auxiliary Supplies


    Original     		PDF LTC4242 38-Lead 36-Lead OT-23 4242f Si2306DS pc diagnostic card

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6739 Issued Date : 1994.05.18 Revised Date : 2004.11.19 Page No. : 1/4 MICROELECTRONICS CORP. HSC4242 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC4242 is designed for triple diffused planar type and high speed switching applications.


    Original     		PDF HE6739 HSC4242 HSC4242 O-220 183oC 217oC 260oC

    D496

    Abstract: RE40 adc900
    Text: BCM ArrayTM BC384R120T060VM-00 Features • 384 V to 12 V VI BRICK BCM Array • 600 Watt 900 Watt for 1 ms Vin = 360 – 400 V Vout = 11.3 – 12.5 V Iout = 50 A K = 1/32 Rout = 10.0 mΩ max • Vertical mount package reduces footprint • Integrated heat sink simplifies


    Original     		PDF BC384R120T060VM-00 BC384R120T060VM-00 D496 RE40 adc900

    RL400

    Abstract: RL40 pma RL40-MOD RL40-PWR specification of rs 485 cable modbus pt1000 serial 442-X RL423-3 RL424-0 DS301
    Text: RL 400 Modular I/O system Plug-in I/O modules Suitable for CANopen/PROFIBUS-DP/MODBUS TCP Modules for numerous sensors and signals open Flexible plant design MODBUS PROFILE The input/output modules with fieldbus communication ports provide a high degree of flexibility when designing new


    Original     		PDF D-34123 RL400 RL40 pma RL40-MOD RL40-PWR specification of rs 485 cable modbus pt1000 serial 442-X RL423-3 RL424-0 DS301

    D496

    Abstract: RE40 4242 transistor
    Text: BCM ArrayTM BC384R120T030VM-00 Features • 384 V to 12 V VI BRICK BCM Array • 300 Watt 450 Watt for 1 ms Vin = 360 – 400 V Vout = 11.3 – 12.5 V Iout = 25 A K = 1/32 Rout = 20.0 mΩ max • Vertical mount package reduces footprint • Integrated heat sink simplifies


    Original     		PDF BC384R120T030VM-00 BC384R120T030VM-00 D496 RE40 4242 transistor

    D496

    Abstract: RE40
    Text: BCM ArrayTM BC384R120T030VM-00 Features • 384 V to 12 V VI BRICK BCM Array • 300 Watt 450 Watt for 1 ms Vin = 360 – 400 V Vout = 11.3 – 12.5 V Iout = 25 A K = 1/32 Rout = 20.0 mΩ max • Vertical mount package reduces footprint • Integrated heat sink simplifies


    Original     		PDF BC384R120T030VM-00 BC384R120T030VM-00 D496 RE40

    irf740 mosfet

    Abstract: power MOSFET IRF740 transistor IRF740 TA17424 IRF740 TB334
    Text: IRF740 Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRF740 O-220AB irf740 mosfet power MOSFET IRF740 transistor IRF740 TA17424 IRF740 TB334

    sac 187

    Abstract: 217F D496 D505
    Text: BCM ArrayTM BC352R440T033VM-00 Features • 352 Vdc – 44 Vdc 325 W VI BRICK BCM Array • Integrated heatsink simplifies TM thermal management • Vertical mount package reduces footprint • High efficiency >95% reduces system Size: 3.54 x 0.56 x 1.13 in


    Original     		PDF BC352R440T033VM-00 sac 187 217F D496 D505

    sac 187

    Abstract: 217F D496 D505
    Text: BCM ArrayTM BC384R480T065VM-00 Features • 384 Vdc – 48 Vdc 650 W VI BRICK BCM Array • Integrated heatsink simplifies TM thermal management • Vertical mount package reduces footprint • High efficiency >95% reduces system Size: 3.54 x 0.56 x 1.13 in


    Original     		PDF BC384R480T065VM-00 sac 187 217F D496 D505

    sac 187

    Abstract: 217F D496 D505
    Text: BCM ArrayTM BC384R480T033VM-00 Features • 384 Vdc – 48 Vdc 325 W VI BRICK BCM Array • Integrated heatsink simplifies TM thermal management • Vertical mount package reduces footprint • High efficiency >95% reduces system Size: 3.54 x 0.56 x 1.13 in


    Original     		PDF BC384R480T033VM-00 sac 187 217F D496 D505

    TRANSISTOR BC 384

    Abstract: transistor BC 945 D496 D505
    Text: BCM TM Bus Converter Features Size: 1.91 x 1.09 x 0.37 in 48,6 x 27,7 x 9,5 mm • 100°C baseplate operation • Typical efficiency 95% • 384 V to 12 V Bus Converter • <1 µs transient response • 300 Watt 450 Watt for 1 ms • >3.5 million hours MTBF


    Original     		PDF BC384A120T030FP TRANSISTOR BC 384 transistor BC 945 D496 D505

    MM8001

    Abstract: M8-001 MM8000 M8000
    Text: MOTOROLA SC XSTRS/R F 4bE b3b7554 00^4242 b «NOTh D MOTOROLA •I SEMICONDUCTOR l TECHNICAL DATA MM8000 MM8001 The RF Line NPN SILICON AM PLIFIER TRANSISTORS N PN S IL IC O N H IG H -F R E Q U E N C Y T R A N S IS T O R . . . designed for high-frequency C.A.T.V. amplifier applications. Suit­


    OCR Scan     		PDF b3b7554 MM8000 MM8001 M8001) 240ohm MM8001 M8-001 M8000

    D 4242 transistor

    Abstract: IEC-664 insulation distances ST T4 1060 H 4242 transistor 4242 transistor
    Text: Optocouplers P lastic O ptocouplers P ut an end to erroneous data, false control signals, and damaged circuits with HP’s line of high-performance plastic optocouplers. There are six basic families of optocoup­ lers to choose from: high-speed logic gate, high-speed


    OCR Scan     		PDF

    D 4242 transistor

    Abstract: transistor C 4242 H 4242 transistor transistor 4242 4242 transistor 2N7086 w 1p 257AB A-1456
    Text: C r 9 ficanix 2N7086 Jm B in c o r p o ra t e d N-Channel Enhancement Mode Transistor TO-257AB Hermetic Package T O P VIEW o PRODUCT SUMMARY r DS ON • d (V) (H) (A) 200 0.16 14 V (BR)DSS 1 GATE 2 DRAIN 3 SO U R CE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF 2N7086 O-257AB D 4242 transistor transistor C 4242 H 4242 transistor transistor 4242 4242 transistor 2N7086 w 1p 257AB A-1456

    lt 332 diode

    Abstract: 4242 DM 4243 dm IRFF330 IRFF331 IRFF332 IRFF333 diode 331 t2235 QA-750
    Text: 1 &£ D SILICONIX INC • Ö 2 5 4 7 3 5 GDlMflEl b ■ IRFF330/331/332/333 C T 'S ilico n ix Jm W incorporated N-Channel Enhancement Mode Transistors T TCJ-205AF - ^ - o q . BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF330 400 1.0 3.5 IRFF331 350


    OCR Scan     		PDF IRFF330/331/332/333 IRFF330 IRFF331 IRFF332 IRFF333 O-205AF lt 332 diode 4242 DM 4243 dm diode 331 t2235 QA-750

    2sd 4242

    Abstract: c 3866 2SC4977 C3866 c 4242 c3505 C2656 2sd2431 I50F C4383
    Text: BIPOLAR TRANSISTORS Quick Selection Guide Comprehensive chart C o lle c to r c u rre n t le co n t. A P N P t r a n s is t o r VcEO (sus) V o lts m in . C o lle c to r-to e m itt e r v o lta g e 40 50 80 100 120 180 200 2 50 300 320 350 400 2S C 2929 3 2 S D 1 1 57


    OCR Scan     		PDF B1532 7S0916 2SD2431 1300M I200E I200ZP 2sd 4242 c 3866 2SC4977 C3866 c 4242 c3505 C2656 I50F C4383

    Untitled

    Abstract: No abstract text available
    Text: IRF740 Semiconductor Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		PDF IRF740 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: National Semiconductor DM54368 Hex TRI-STATE Inverting Buffers General Description This device contains six Independent gates each of which performs an Inverting buffer function. The outputs have the TRI-STATE feature. When enabled, the outputs exhibit the


    OCR Scan     		PDF DM54368

    Untitled

    Abstract: No abstract text available
    Text: co <o « CTI National ÉSà Semiconductor DM54368 Hex TRI-STATE Inverting Buffers General Description This device contains six independent gates each of which performs an inverting buffer function. The outputs have the TRI-STATE feature. When enabled, the outputs exhibit the


    OCR Scan     		PDF DM54368

    6573

    Abstract: DM54368 DM54368J DM54368W J16A W16A
    Text: 368 CTl National ÉSASemiconductor DM54368 Hex TRI-STATE Inverting Buffers General Description This device contains six independent gates each of which performs an inverting buffer function. The outputs have the TRI-STATE feature. When enabled, the outputs exhibit the


    OCR Scan     		PDF DM54368 6573 DM54368J DM54368W J16A W16A