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    C 1027 TRANSISTOR Search Results

    C 1027 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C 1027 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sn1027

    Abstract: c 1027 transistor LT1798 LT1021-5 LT1027 LT1027ACH-5 LT1027BCH-5 LT1027CCH-5 LT1027DCH-5 LTC1290
    Text: LT1027 Precision 5V Reference U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO Very Low Drift: 2ppm/°C Max TC Pin Compatible with LT1021-5, REF-02, PDIP Package Output Sources 15mA, Sinks 10mA Excellent Transient Response Suitable for A-to-D Reference Inputs


    Original     		PDF LT1027 16-bit LT1027 LT1021-5, REF-02, LT1236 LT1460 10ppm/ OT-23 LT1461 sn1027 c 1027 transistor LT1798 LT1021-5 LT1027ACH-5 LT1027BCH-5 LT1027CCH-5 LT1027DCH-5 LTC1290

    lt 864

    Abstract: LT1021-5 LT1027 LT1027ACH-5 LT1027BCH-5 LT1027CCH-5 LT1027DCH-5 LTC1290 REF-02 h8 diode zener
    Text: LT1027 Precision 5V Reference U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO Very Low Drift: 2ppm/°C Max TC Pin Compatible with LT1021-5, REF-02, PDIP Package Output Sources 15mA, Sinks 10mA Excellent Transient Response Suitable for A-to-D Reference Inputs


    Original     		PDF LT1027 16-bit LT1027 LT1021-5, REF-02, LT1236 LT1460 10ppm/ OT-23 LT1461 lt 864 LT1021-5 LT1027ACH-5 LT1027BCH-5 LT1027CCH-5 LT1027DCH-5 LTC1290 REF-02 h8 diode zener

    1027c5

    Abstract: LT1798 1027E5 LT1027BCN8-5 LT1021-5 LT1027 LT1027ACH-5 LT1027BCH-5 LT1027CCH-5 LT1027DCH-5
    Text: LT1027 Precision 5V Reference U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO Very Low Drift: 2ppm/°C Max TC Pin Compatible with LT1021-5, REF-02, TO-5 and PDIP Packages Only Output Sources 15mA, Sinks 10mA Excellent Transient Response Suitable for A-to-D Reference Inputs


    Original     		PDF LT1027 16-bit LT1027 LT1021-5, REF-02, LT1236 LT1460 10ppm/ OT-23 LT1461 1027c5 LT1798 1027E5 LT1027BCN8-5 LT1021-5 LT1027ACH-5 LT1027BCH-5 LT1027CCH-5 LT1027DCH-5

    Untitled

    Abstract: No abstract text available
    Text: LT1027 Precision 5V Reference U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO Very Low Drift: 2ppm/°C Max TC Pin Compatible with LT1021-5, REF-02, PDIP Package Output Sources 15mA, Sinks 10mA Excellent Transient Response Suitable for A-to-D Reference Inputs


    Original     		PDF LT1027 16-bit LT1027 LT1021-5, REF-02, LT1236 LT1460 10ppm/Â OT-23 LT1461

    LT1021-5

    Abstract: LT1027 LT1027ACH-5 LT1027BCH-5 LT1027C LT1027M LTC1290 REF-02 1027E5
    Text: LT1027 Precision 5V Reference U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ The LT 1027 is a precision reference with extra-low drift, superior accuracy, excellent line and load regulation and low output impedance at high frequency. This device is intended for use in 12- to 16-bit A-to-D and D-to-A


    Original     		PDF LT1027 16-bit LT1027 LT1021-5, REF-02, LT1021 LT1236 LT1460 10ppm/ OT-23 LT1021-5 LT1027ACH-5 LT1027BCH-5 LT1027C LT1027M LTC1290 REF-02 1027E5

    2N6193U3

    Abstract: 2N5339 2N6193 MIL-PRF19500 JANTX 2n6193
    Text: The documentation process conversion measures necessary to comply with this revision shall be completed by 3 April 2001 INCH-POUND MIL-PRF-19500/561D 3 January 2001 SUPERSEDING MIL-PRF-19500/561C 28 July 1999 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING


    Original     		PDF MIL-PRF-19500/561D MIL-PRF-19500/561C 2N6193 2N6193U3 MIL-PRF-19500 2N5339 MIL-PRF19500 JANTX 2n6193

    TRANSISTOR SMD MARKING CODE 451

    Abstract: 2N6193 2N5339
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 6 June 2002. INCH-POUND MIL-PRF-19500/560E 6 March 2002 SUPERSEDING MIL-PRF-19500/560D 3 January 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING


    Original     		PDF MIL-PRF-19500/560E MIL-PRF-19500/560D 2N5339 2N5339U3 MIL-PRF-19500 TRANSISTOR SMD MARKING CODE 451 2N6193

    2N7575

    Abstract: diode cc 3053 operation50 2N7576
    Text: INCH-POUND MIL-PRF-19500/738 24 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON, TYPES 2N7575, 2N7576, AND 2N7577, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments


    Original     		PDF MIL-PRF-19500/738 2N7575, 2N7576, 2N7577, MIL-PRF-19500. O-254AA) 2N7575 diode cc 3053 operation50 2N7576

    2N7569

    Abstract: No abstract text available
    Text: INCH-POUND MIL-PRF-19500/734 16 February 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON TYPES 2N7569, 2N7570, AND 2N7571 JAN, JANTX, JANTXV AND JANS. This specification is approved for use by all Departments


    Original     		PDF MIL-PRF-19500/734 2N7569, 2N7570, 2N7571 MIL-PRF-19500. 2N7569

    diode cc 3053

    Abstract: JANTX 2N6341 BUT 509D 2N6338 2N6341 2N6437 2N6438 C-48U 509D cc 3053
    Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 9 January 2009. INCH-POUND MIL-PRF-19500/509D 9 October 2009 SUPERSEDING MIL-PRF-19500/509C 25 July 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,


    Original     		PDF MIL-PRF-19500/509D MIL-PRF-19500/509C 2N6338 2N6341, MIL-PRF-19500. diode cc 3053 JANTX 2N6341 BUT 509D 2N6341 2N6437 2N6438 C-48U 509D cc 3053

    diode cc 3053

    Abstract: 2N6341 C-48U 2N6338 MIL-PRF19500 3041 v cc 3053
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 1999. INCH-POUND MIL-PRF-19500/509C 25 July 1999 SUPERSEDING MIL-S-19500/509B 25 June 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER


    Original     		PDF MIL-PRF-19500/509C MIL-S-19500/509B 2N6338 2N6341 MIL-PRF-19500. 204AA diode cc 3053 2N6341 C-48U MIL-PRF19500 3041 v cc 3053

    2N3467

    Abstract: 2N3467L 2N3468 2N3468L 2N3647 2N3648
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 1999 INCH-POUND MIL-PRF-19500/348E 25 July 1999 SUPERSEDING MIL-S-19500/348D 6 October 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING


    Original     		PDF MIL-PRF-19500/348E MIL-S-19500/348D 2N3467, 2N3467L, 2N3468, 2N3468L, MIL-PRF-19500. 2N3467 2N3467L 2N3468 2N3468L 2N3647 2N3648

    ze 003 ic

    Abstract: c 1027 transistor 2SB1018A 2SD1411A PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A TV-2000
    Text: T O S H IB A 2SB1018A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S B 1 018A HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm POWER AMPLIFIER APPLICATIONS 10 ±0.3 • High Collector Current : Ic = —7 A J •


    OCR Scan     		PDF 2SB1018A 2SD1411A ze 003 ic c 1027 transistor 2SB1018A 2SD1411A PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A TV-2000

    2SD1409A

    Abstract: No abstract text available
    Text: TOSHIBA TOSHIBA TRANSISTOR IGNITER APPLICATIONS 2SD1409A 2SD1409A SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 • 03.2 ±0.2 2.7±0.2 High DC Current Gain * = 600 (Min.)


    OCR Scan     		PDF 2SD1409A 2SD1409A

    2sC5200, 2SA1943

    Abstract: 2SA1943 2sa1943 amplifier 2-21F1A 2SC5200 power amplifier 2sc5200 2sa1943 TRANSISTOR 2sa1943 transistor 2SC5200
    Text: 2SA1943 TO SH IBA 2 S A 1 943 T O S H IB A TRANSISTOR POWER AM PLIFIER APPLICATIO NS SILICON PNP TRIPLE DIFFUSED TYPE h , • • Complementary to 2SC5200 Recommended for 100 W High Fidelity Audio Frequency Amplifier Output Stage. 20.5MAX. » 7T M A X IM U M RATINGS Ta = 25°C


    OCR Scan     		PDF 2SA1943 2SC5200 2-21F1A 000707EAA2' 2sC5200, 2SA1943 2SA1943 2sa1943 amplifier power amplifier 2sc5200 2sa1943 TRANSISTOR 2sa1943 transistor 2SC5200

    c 1027 transistor

    Abstract: TRANSISTOR RF 1049 Power-Amplifier R1075
    Text: _ W ire le s s /R F P ro d u c ts Wireless/RF Products. Product T a b le . 10-2 MAX2102 Direct-Conversion Tuner IC for Digital DBS


    OCR Scan     		PDF MAX2102 MAX2406 MAX2410 MAX2411A OT23-5 MAX2632 MAX2633 OT23-6 MAX2662 MAX2690 c 1027 transistor TRANSISTOR RF 1049 Power-Amplifier R1075

    BD 130 Y transistor

    Abstract: No abstract text available
    Text: M 8Ï5U M 8 System Reset with battery back-up MM 1027, 1081 : Monolithic IC MM 1027, 1081 These ICs were developed for STATIC-RAM (S-RAM) battery back-up, and have built-in switching circuit for main power supply and battery, back-up timing circuit and battery checker.


    OCR Scan     		PDF 1000pF MM1027, MM1081 5000/div BD 130 Y transistor

    KDS 8 MHZ cq crystal

    Abstract: Mcu-02 Ls allen bradley CC series xnxx Non-Volatile RAM accelerator rockwell modem XNXXX KDS crystal 12.000 4 MHz crystal KDS 2K KDS technical report
    Text: RC288ACÌ Modem Designer’s Guide 1. INTRODUCTION 1.2. 1.1. SUMMARY • Data modem throughput up to 115.2 kbps - V.34, V.FC, V.32 bis, V.32, V.22 bis, V.22A/B, V.23. and V.21; Bell 212A and 103 - V.42 LAPM and MNP 2-4 error correction - V.42 bis and MNP 5 data compression


    OCR Scan     		PDF RC288ACÌ RC288ACi 42/MNP J22198 KDS 8 MHZ cq crystal Mcu-02 Ls allen bradley CC series xnxx Non-Volatile RAM accelerator rockwell modem XNXXX KDS crystal 12.000 4 MHz crystal KDS 2K KDS technical report

    Y parameters of transistors

    Abstract: SAMPLING PLAN
    Text: Philips Semiconductors Product specification Microwave Transistors General BATCH RELEASE TESTS FOR GRADE “X” AND "Y” EQUIVALENTS Group B; note 1. INSPECTIONS MIL STD 750 METHOD CONDITIONS SAMPLING PLAN LTPD<2> SMALL LOT QUALITY CONFORMANCE INSPECTION


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Darlington Transistors Darlington Power Transistors ITO-220 TO-220 ITO-3P MTO-3P Bipolar transistors Absolute Maximum Ratings Electrica Characteristics VcEO VcBO VcEO V ebo lc Ib Pi Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] [°C] [ ”C ] 2SD1022 100 100 1023


    OCR Scan     		PDF ITO-220 O-220 2SD1022 2SB1282

    Untitled

    Abstract: No abstract text available
    Text: Darlington Transistors D a rlin g to n P o w e r T r a n s is to r s Bipolar transistors T ype No. E IA J Absolute Maximum Ratings Electrical Characteristics VCBO VOEO V ebo lo Ib Pt Tstg Tj sus (min) [V ] [V ] [V ] [A ] [A ] [W ] [•c] [•c] [V ] 100


    OCR Scan     		PDF 2SD1022 2SB1282 ITO-220 ITO-220

    TH3L10

    Abstract: TK3L10 TH5P4 transistor d 1795 417 TRANSISTOR zener diode 1283
    Text: Darlington T ra n sisto rs Darlington Transistors Bipolartransistors Part l\lo. EIAJ No. Absolute Maximum Ratings VCBO VCEO V ebo lc Ib Pt [V] [V] [V] [A] [A] [W] 100 200 100 100 200 VCEO min 2SD1022 1023 1024 1025 1026 1027 200 200 100 200 200 1349 500


    OCR Scan     		PDF 2SD1022 2SB1282 O-220 TH3L10 3L10Z* TK3L10 TH5P4 transistor d 1795 417 TRANSISTOR zener diode 1283

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 505 NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kü, R2=10kQ Marking Ordering Code Pin Configuration BCR 505 XWs Q62702-C2354 1= B Package LU It C\J Type 3=C


    OCR Scan     		PDF Q62702-C2354 OT-23 E3SL05 6235b05

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS NPN Silicon RF Transistor BFT 66 • For small-signal broadband amplifiers up to 1 GHz at collector currents up to 20 mA. £ CECC-type available: CECC 50002/255. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking


    OCR Scan     		PDF Q62702-F456 00b743fi 623SbD5 BFT66 flE35bOS