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    NEOSId 2.2k

    Abstract: NEOSID 22k
    Text: Page 1 FS: 04/93 SIEMENS AG IC-SPECIFICATION TDA 4362 X Differences to the last edition Last Edition: Page 11: Page 12: DOK-Nr. V66047-S1603-C200-G1 date: 11.12.97 #P7: Test values and units changed #P8: Test values and units changed #P11: Test values changed, wrong values in previous version


    OCR Scan     		PDF V66047-S1603-C200-G1 V66047-S1603-C200-G2 fl23SbD5 NEOSId 2.2k NEOSID 22k

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    Abstract: No abstract text available
    Text: BSP 320S Infineon te c h n o lo g ¡« s SIPMOS Small-Signal-Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 60 V f f DSion 0.12 Í2


    OCR Scan     		PDF BSP320S OT-223 Q67000-S4001 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T