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    BZW86 Search Results

    BZW86 Datasheets (136)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BZW86-10 Mullard Quick Reference Guide 1977/78 Scan PDF
    BZW86-10 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    BZW86-10 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BZW86-10 Philips Semiconductors Transient Suppressor Diodes Scan PDF
    BZW86-10R Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BZW86-10R Philips Semiconductors Transient Suppressor Diodes Scan PDF
    BZW86-11 Mullard Quick Reference Guide 1977/78 Scan PDF
    BZW86-11 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    BZW86-11 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BZW86-11 Philips Semiconductors Transient Suppressor Diodes Scan PDF
    BZW86-11R Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BZW86-11R Philips Semiconductors Transient Suppressor Diodes Scan PDF
    BZW86-12 Mullard Quick Reference Guide 1977/78 Scan PDF
    BZW86-12 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    BZW86-12 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BZW86-12 Philips Semiconductors Transient Suppressor Diodes Scan PDF
    BZW86-12R Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BZW86-12R Philips Semiconductors Transient Suppressor Diodes Scan PDF
    BZW86-13 Mullard Quick Reference Guide 1977/78 Scan PDF
    BZW86-13 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    ...

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    Untitled

    Abstract: No abstract text available
    Text: BZW86-43R Diodes Unidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage48 @I(R) (A) (Test Condition)2.0 V(RWM) (V) Work.Pk.Rev.Voltage43 I(PPM) Max.(A)Pk.Pulse Current250


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    PDF BZW86-43R Voltage48 Voltage43 Current250 Voltage66 StyleDO-30

    Untitled

    Abstract: No abstract text available
    Text: BZW86-10R Diodes Unidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage11 @I(R) (A) (Test Condition)10 V(RWM) (V) Work.Pk.Rev.Voltage10 I(PPM) Max.(A)Pk.Pulse Current1.0k


    Original
    PDF BZW86-10R Voltage11 Voltage10 Voltage15 StyleDO-30

    Untitled

    Abstract: No abstract text available
    Text: BZW86-47R Diodes Unidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage52 @I(R) (A) (Test Condition)2.0 V(RWM) (V) Work.Pk.Rev.Voltage47 I(PPM) Max.(A)Pk.Pulse Current250


    Original
    PDF BZW86-47R Voltage52 Voltage47 Current250 Voltage72 StyleDO-30

    DIODE BZW70

    Abstract: SOD-18 bzw70 BZW91 BZW70 33 BZW86 SOD-51 BZW70/24
    Text: Silicon surge suppressor diodes selection guide book 1 part 4 S ta n d -o ff v o lta g e V sq pulse 6.2 7.5 8.2 - P o la rity 40QW BZW70 SO D -18 Norm. 5kW BZW91 DO-5 Both D O -30 Both 13kW BZW86 N orm al p o la rity = ca th o de to stu d ; reverse p o la rity (R ) = a no de to stud.


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    PDF BZW70 OD-18 BZW91 BZW86 DO-30 h--22-> crt6-25 DIODE BZW70 SOD-18 BZW70 33 BZW86 SOD-51 BZW70/24

    BZW86 Series

    Abstract: BZW86-7V5R BZW86 BZW86-56 BZW86-27 BZW86-7V5 BZW86-9V1 IEC134
    Text: N AMER P H I L I P S / D I S C R E T E TÜD D • 1 ^ 5 3 ^ 3 1 QDlObTS b BZW86 SERIES TRANSIENT SUPPRESSOR DIODES A ra n g e of diffu sed silic o n d io d e s in a D O -30 m e ta l envelope intended fo r u s e in th e p r o ­ te c tio n of th e e le c tr ic a l and e le c tro n ic equipm ent a g a in s t v o lta g e tr a n s ie n ts .


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    PDF BZW86 DO-30 BZW86-7V5 BZW86-7V5R DO-30 BZW86 Series BZW86-56 BZW86-27 BZW86-9V1 IEC134

    BZW86-27

    Abstract: BZW86 BZW86-7V5R BZW86-56 BZW86 Series BZW86-7V5 BZW86-9V1 IEC134 DO-30 philips RSM
    Text: TGD D N AMER PHILIPS/ D IS CR ET E • bbS3T31 0GlDb‘i2 b BZW86 SERIES TRANSIENT SUPPRESSOR DIODES A range of diffused silicon diodes in a DO-30 metal envelope intended for use in the p r o ­ tection of the electrical and electronic equipment against voltage transients.


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    PDF bbS3T31 0G10b' BZW86 DO-30 BZW86-7V5 BZW86-7V5R 001D701 BZW86 BZW86-27 BZW86-56 BZW86 Series BZW86-9V1 IEC134 philips RSM

    BTX94

    Abstract: BTX94-600U BTx94 1200 ST BTW48 sot 23 3d SOT-25 0b rbi-e BT138 BTW37 T0220AB
    Text: Thyristors and triaos abridged data of principal types book 1 part 5 TRIACS The type number suffix is the VD pM rating Ratings • t (RMS) Tmb * 85°C I trm (A) (A ) I t s m 1) l 2t t - 10ms {A ) dlT dt (A 2s) (A //is) Characteristics dVD V qt d t m8X normal co m m u tatin g m in.


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    PDF BT138 T0-220AB) BTW37 BTW43 T0220AB) BTW41 BTW48 1200U BTX94 BTX94 BTX94-600U BTx94 1200 ST BTW48 sot 23 3d SOT-25 0b rbi-e T0220AB

    BY223

    Abstract: BY277 BYX50-200R BYX50-200 bridge RECTIFIER GI by277 750r diode BY223 600R 800R BYW19
    Text: Silicon rectifier diodes and bridge m odules fast recovery rectifier diodes Type No. O utline Drawing reference A (V) (V) (A ) SOD-38 5* 1500 1500 10 20 SOD-38 7 800 1000 800 800 20 7 50 100 150 50 100 150 DO-4 B1 7 200 300 350 600 SOD-38 7 600R 750R SOD-38


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    PDF BY223 OD-38 BYW19 BYW29 tBYX71 S0D38 BY277 t1N3889 BY223 BYX50-200R BYX50-200 bridge RECTIFIER GI by277 750r diode BY223 600R 800R

    BAV46

    Abstract: bat59 Pin connection of bk 1085 BAT39 BAT52 BAV72 BAT10 BAW96 BAV71 BAT50R
    Text: Microwave solid state mixer diodes M axim um Operating Frequency GHz Type No. book 1 part 8 Typical Noise Figure (dB) Typical Impedance 8.5 750 O perating Temperature Z if Drawing i'e fe re n c e O u tlin e <oc> (Í2) GERMANIUM POINT CONTACT 40 AAY34 - 5 5 t o +100


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    PDF AAY34 S0D-42 BAT10 SAT11 BAT39 CV7762) BAT39A OD-42 BAT50R SO-26 BAV46 bat59 Pin connection of bk 1085 BAT39 BAT52 BAV72 BAW96 BAV71

    AC128 transistor

    Abstract: bc649 BC646 AC188 ac187 BCS48 bc660 AC188 transistor transistor AC128 AC188 AC187
    Text: Transistors germanium low/medium power transistors Dwg. ref. O utline •b z -0 ?î book 1 parts 1 and 2 V CBO V V ceo (V) M axim um Ratings lCM IC(AV) (A ) (A) Ptot at 25PC (°C> <mW) Tj m in. at •c fT ty p . (m A i (MHz) 2.5 h FE max. Special Features


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    PDF at25PC AC128 AC187 AC188 2N1303 2N1306 2N1307 2N1309 h--22-> crt6-25 AC128 transistor bc649 BC646 AC188 ac187 BCS48 bc660 AC188 transistor transistor AC128 AC188

    tube az2

    Abstract: 2n2389 2n2906 sis BSS68 BSW41 2N2369 2N2906 to92 BFX34 BSS38 BSW41A
    Text: Transistors Type No. g s 3 o Drawing reference silicon low/medium power switching transistors book 1 parts 1 and 2 VCEJO VcEO <V V) Maximum Ratings IcM lc(AV) (mA) ImA) Hfe min. max. Ptot at 25°C (°C) <mW) Tj at •c fT VcE(sat) min. max. (mA) (MHz) (V)


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    PDF BSS38 BSW41A T0-18 BSX19 BSX20 BSX21 BSY95A h--22-> crt6-25 tube az2 2n2389 2n2906 sis BSS68 BSW41 2N2369 2N2906 to92 BFX34

    bc657

    Abstract: BC566 BC659 BC159 BC463 BCX36 BCY34A BC167 BC462 transistor bc668
    Text: Transistors P-N-P silicon lo w /m ed iu m pow er transistors book 1 parts 1 and 2 Type No. 1 3 o e ! VcBO V ce.0 V (V) M axim um Ratings ' cm Ic <AV) (m AJ Tj P«ot (m A) a t 2 5 °C <°C) (mW) 200 200 50 200 3 60 100 125 3 50 h FE m in. m ax. at le (m A)


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    PDF BCY70 BCY71 BCY71) BCY72 BFX37 BC167 OT-25 KBC158 BC159 15kHz bc657 BC566 BC659 BC159 BC463 BCX36 BCY34A BC462 transistor bc668

    DIODO LN4148

    Abstract: A2 diodo zener diodo zener 5.1 B2 diodo 1n4148 diodo s4 diodo s4 81 6.8 B2 diodo a52 zener diode diodo 72 DIODO LED
    Text: Microminiature devices diodes book 1 part 3 Outline SO T-23 Type No. | | » Q £ BAV70 X4 BAW66 X5 BAV99 X6 Description Common cathode double diodo Common anode double diodo Two diodes i n series intended for high speed switching. Vrrm Ifrm Max. Reverse Recovery Time, t rr


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    PDF OT-23 BAV70 BAV99 1N4148 200mW OT-23 BZX84 h--22-> crt6-25 DIODO LN4148 A2 diodo zener diodo zener 5.1 B2 diodo 1n4148 diodo s4 diodo s4 81 6.8 B2 diodo a52 zener diode diodo 72 DIODO LED

    BZX93

    Abstract: BZX90 BY409 BYX35 BY209 BZX91 BY209 A high voltage rectifier diode 1N82S BZX90 3.3
    Text: Diodes low power high voltage diodes I fiav max. Tamb = 3 5°C T oh= 50 C <mA) m A) V rwm max. <kV> Type No. Description 2.5 - B Y182 12 E.H .T. rectifiers in plastic envelopes. 2.5 - B Y 209 11.5 E .H .T. soft-recovery re ctifie r diode. 2,5 - B Y 409


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    PDF BY209 BY409 BYX35 BYX90 BYX91-90K -120K -150K h--22-> crt6-25 BZX93 BZX90 BZX91 BY209 A high voltage rectifier diode 1N82S BZX90 3.3

    BD139 heat sink

    Abstract: BD133 BD23B box78 bux87 B0137 BF468 BD232 bzw86 BD136
    Text: Transistors silicon plastic-encapsulated transistors book 1 parts 1 and 2 Type No. N-P-N VcBO VcEO P-N-P V Outline TO-126 M axim u m Ratings •CM IctAV) (V ) (A ) (A) T| (°C> Hfe at fT Vcasat) m in. m ax. Ic m in. m ax. Ptot Tmb= 25 C (W) Im A) (M H z) (V)


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    PDF O-126 BF468 BF470 BF457 BF468 BF459 BD232 BD136 B0137 h--22-> BD139 heat sink BD133 BD23B box78 bux87 B0137 BD232 bzw86 BD136

    BCX33

    Abstract: BCX32 BCX31 BCX34 BFQ36 2N1711 Data Sheet BC337 BC338 BFX84 BFX85
    Text: Transistors N-P-N silicon low/medium power transistors book 1 parts 1 and 2 cont. Type No. V c □ O o> ^ Ï o M axim um Ratings Icm I cjavi vceo V ceo (V) (V ) (A) (A) hpE Ptot m in. max. at 25°C <°C) (mW) 50 45 1.0 0.5 150 625 100 30 25 150 730 Ti fT


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    PDF BC337 BC338 BCX31 OT-25 BCX32 BCX33 BCX34 BFX84 BFX85 h--22-> BCX33 BCX32 BCX34 BFQ36 2N1711 Data Sheet BC338 BFX85

    C5VI ezx79

    Abstract: C9VI C7V6 bs9305n041 zener c7v6 C5VI BS9305 BZX79 BZY88 0B8 diode zener
    Text: Silicon voltage regulator diodes low pow er book 1 part 3 400mW Tamb= so°c ± 5%voltage tolerance. Outline DO-35 Drawing reference H Measured at Test I Max. Voltage <V> Typ. Temp. Coefficient (mV/°C) Test lz (m A) Max I r at V r (V» Type No. B2X79 Nom. Zener


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    PDF 400mW DO-35 BZX79 h--22-> crt6-25 C5VI ezx79 C9VI C7V6 bs9305n041 zener c7v6 C5VI BS9305 BZY88 0B8 diode zener

    BT 140

    Abstract: by225 100 BY225 BY224 BY179 BYW47 bridge RECTIFIER GI BZW86 BYW44 BYW46
    Text: Silicon rectifier diodes and bridge modules bridge modules single phase book 1 part 4 DESIGN TYPES OUTPUT INPUT Type No. Drawing reference w I (RMS) (Vi V IRM V IWM •iSM *0(AV> lORM (V) (V) (A) (Al (A) BY 164 BO 42 120 60 25 1.4 5 BY 225 -1 0 0 »200 BR


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    PDF BY225 BY179 BY224 BYW44 BYW46 BYW48 BYW47 h--22-> crt6-25 BT 140 by225 100 bridge RECTIFIER GI BZW86

    SOT-23 X1

    Abstract: BC1088 BFR63 BFR94 BCX66 BFQ18 BFT26 bd135 BD139 heat sink BFT92
    Text: Microminiature devices transistors primarily intended for hybrid, thin and thick film circuits _ w Type No. = £ g 3 J I VCB0 | « Maximum Ratings Vceo IC|*V T. O a ! I V I Im A I IV I book 1 parts 1 and 2 hf t Ptg min. at 25 C <°C) Im W I


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    PDF BCW31R BCW32R BCW33R OT-23 BC108A BC108B BC108C BCW71R BCW72R SOT-23 X1 BC1088 BFR63 BFR94 BCX66 BFQ18 BFT26 bd135 BD139 heat sink BFT92

    BLW64

    Abstract: uhf amplifier design BFR90 BFR94 BGY36 BLW94 SOT-48 BGY33 BGY35 BGY21 BGY22
    Text: Transistors book 1 parts 1 and 2 broadband r.f. power modules Type No. Drawing reference Description Frequency Supply Range Voltage MHz (V) Min. Power Output (W) p at OR ImW) Efficiency Typ. <%> BGY21 U.H.F. amplifier module designed for portable equipment


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    PDF BGY21 BGY22 BGY23 BGY22A BGY23A BGY32 BGY33 BGY35 BGY36 h--22-> BLW64 uhf amplifier design BFR90 BFR94 BLW94 SOT-48

    BLX14

    Abstract: SOT-48 BLX88 BLX66 BLY93 BLY94 BLY33 BLY34 2N3375 810BLY transistor
    Text: Transistors n-p-n r.f. power transistors book 1 parts 1 and 2 - § Type No. Maximum Ratings ^b o v ceo *cm ° K hFE 'ciav I ® £ % T* at Ptot m in - m a x - lc f r VcE sat> m ' n* m a x - at 'c Po ,8 *• GP at ty p . f at V cc Tm£ “ (V) (V) IA)


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    PDF 810BLY/A 8LX13 BLX14 BLY33 BLY34 h--22-> crt6-25 SOT-48 BLX88 BLX66 BLY93 BLY94 2N3375 810BLY transistor

    BU133

    Abstract: BDY96 BU208 BU208A BU209A 2N3056 BU206 bdy97 BU326 BD182
    Text: Transistors silicon n-p-n power transistors book 1 parts 1 and 2 VobO Maximum Ratings V ceo *CM IctAVl O £ V (V ) BDY38 AR3 60 40 6 BD181 BD182 BD163 AR 2 55 70 65 45 60 80 15 Type No. il (A ) (A ) (°C) Ptot Trnb“ 25 C <W) max. « le at f T VcE(Mt) min. max. lc


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    PDF BDY38 BD182 BD183 BDY20 2N3056 BUX80 BUX81 1000t BDX91 BDX93 BU133 BDY96 BU208 BU208A BU209A BU206 bdy97 BU326

    transistor NPN 3D SOT 153

    Abstract: BRY39 BCY87 TAG thyristor BFR49 si controlled tetrode switch BRY3 BCY88 BCY89 BR101
    Text: Transistors m icrowave transistors Type No. M L 1 5/2 B M L 1 5/4 B Drawing reference VCBO max. V N-P-N transistor fo r am plifiers up to S—band frequencies AN 20 0.025 N-P-N L —band p ow er transistors intended fo r com m on e m itter operation in class AG o r B


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    PDF BFR49 ML15/2B ML15/4B 0-26V BCY87 BCY88 BCY89 h--22-> crt6-25 transistor NPN 3D SOT 153 BRY39 TAG thyristor si controlled tetrode switch BRY3 BR101

    THERMISTORS nsp 037

    Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
    Text: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.


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    PDF 200X300X360m THERMISTORS nsp 037 Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032