BZC-2RW82-A2
Abstract: BZC-2RW80-A2 BZC-2RQ18-A2 BZC-2RW876T 41-3 M12x1.0 M12X1
Text: MICRO SWITCHES BZC SERIES SPECIFICATION Operating Frequence mechanically 240 ops/min electrically 20 ops/min Service Life mechanically 1 X 106 ops. 5 electrically 5 X 10 (ops.) Electrical Rating 15A@ 250VAC Rated Voltage 600VAC Ambient Humidity - 20～+80℃ (-4～176o F)
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250VAC
600VAC
-4176o
2500VAC
50/60Hz
BZC-2RW826-A2
BZC-2RW82-A2
BZC-2RW80-A2
BZC-2RQ18-A2
BZC-2RW876T
41-3
M12x1.0
M12X1
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ADC12M
Abstract: SN8P1989 LQFP80
Text: SN8P1989 8-Bit Micro-Controller with Regulator, PGIA, 16-bit ADC SN8P1989 USER’S MANUAL Preliminary Specification Version 1.2 SONiX 8-Bit Micro-Controller SONIX reserves the right to make change without further notice to any products herein to improve reliability, function or design. SONIX does not
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SN8P1989
16-bit
10F-1,
15F-2,
ADC12M
SN8P1989
LQFP80
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qml-38535
Abstract: CDIP2-T40 AM2910DMB CCEN CAGE CODE 7801702QA 87-11-12
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED D Convert to military drawing format. Add vendor CAGE number 50088 to drawing. Changed code identification number to 67268. 87-11-12 R. P. Evans E Add vendor CAGE code 3V146. Update boilerplate to MIL-PRF-38535
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3V146.
MIL-PRF-38535
910A/BZC
3V146
qml-38535
CDIP2-T40
AM2910DMB
CCEN CAGE CODE
7801702QA
87-11-12
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MG80C186-12
Abstract: MG80C186 MQ80C186-12 MG80C186-10 MG80C186XL12 MG80C186XL 5962-8850102ZA MG80C186-10/BZC MG80C18610 5962-8850101ZC
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Technical changes were made in table I, Editorial changes throughout. 90-08-15 William K. Heckman B Changes in accordance with NOR 5962-R023-92. 91-10-30 Monica L.Poelking C Changes in accordance with NOR 5962-R189-93.
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5962-R023-92.
5962-R189-93.
5962-R001-01.
MIL-PRF-38535.
63V146
MG80C186-12
MG80C186
MQ80C186-12
MG80C186-10
MG80C186XL12
MG80C186XL
5962-8850102ZA
MG80C186-10/BZC
MG80C18610
5962-8850101ZC
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bzv 46
Abstract: ZENER DIODES BZV 48 ZENER DIODES BZV 48 5V1
Text: r z 7 SGS-THOMSON ^ T # if U@ « i BZV 47 C 3V3 200 ZENER DIODES . VOLTAGE RANGE : 3.3V TO 200V • HERMETICALLY SEALED PLASTIC CASE ■ PACKAGE ACCORDING TO NORMALIZATION C C T U : F 126 ■ PRO ELECTRON REGISTRATION ■ HIGH SURGE CAPABILITY 55W @ 10ms
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Untitled
Abstract: No abstract text available
Text: f Y H T1627 RAM Mapping 64x16 LCD Controller for I/O liC H B L T E K Features • • • • • • • • • • • O perating voltage: 2.7V-5.2V B uilt-in RC oscillator 1/5 bias, 1/16 duty, fram e frequency is 64Hz Max. 64x16 patterns, 16 commons, 64 segments
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T1627
64x16
32kHz
HT1627
HT1627.
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qml-38535
Abstract: n17 smd JRC 4804 ADAPT29K
Text: AMD REVISIONS LTR DESCRIPTION OATE APPROVED rR-HO-PA REV SHEET REV SHEET REV STATUS OF SHEETS PMIC N/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE 18 19 20 22 23 24 25 26 5
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32-BIT
5962-E067-93
AM29000-20/BZC
AN29000-16/BZC
qml-38535
n17 smd
JRC 4804
ADAPT29K
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Untitled
Abstract: No abstract text available
Text: SIEM EN S 2M x 8-Bit Dynamic RAM 2k Refresh Hyper Page Mode-EDO HYB 5117805/BSJ-50/-60 HYB 3117805/BSJ-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:
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5117805/BSJ-50/-60
3117805/BSJ-50/-60
117805/BSJ-50/-60
SPT03042
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Untitled
Abstract: No abstract text available
Text: VIS VG26 V (S)17400D 4 ,1 9 4 ,3 0 4 x 4 - Bit CMOS Dynamic RAM Description The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power
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17400D
17400DJ
300mil
26/24-Pin
127irun)
G5-0126
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Untitled
Abstract: No abstract text available
Text: f Y H T1625 RAM Mapping 64x8 LCD Controller for I/O liC H B L T E K Features • R/W address auto increment • Two selectable buzzer frequencies 2kHz/4kHz • Power down command reduces power consumption • Software configuration feature • Data mode and Command mode instructions
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T1625
768kHz
32kHz
32kHz
768kHz
HT1625
HT1625.
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Untitled
Abstract: No abstract text available
Text: HB56HW164EJN-6B/7B 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-573 Z Preliminary - Rev.0.0 Apr. 18,1996 Description The HB56HW164EJN belongs to the 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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HB56HW164EJN-6B/7B
576-word
64-bit
ADE-203-573
HB56HW164EJN
16-Mbit
HM51W18165BJ)
24C02)
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tcd 142
Abstract: No abstract text available
Text: HB56UW272EJN-6B/7B 2,097,152-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Unbufferd 8 byte DIMM HITACHI ADE-203-586A Z Preliminary - Rev. 0.1 May. 23, 1996 Description The HB56UW272EJN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
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HB56UW272EJN-6B/7B
152-word
72-bit
168-pin
ADE-203-586A
HB56UW272EJN
16-Mbit
HM51W17805BJ)
24C02)
tcd 142
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Untitled
Abstract: No abstract text available
Text: HB56HW165DB-6B/7B 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-571 Z Preliminary - Rev.0.0 Apr. 18,1996 Description The HB56HW 165DB is a 1M x 64 dynam ic RAM Sm all O utline Dual In-line M em ory M odule (S.O.DIMM), mounted 4 pieces of 16-Mbit DRAM (HM51W 18165BTT) sealed in TSOP package and 1
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HB56HW165DB-6B/7B
576-word
64-bit
ADE-203-571
HB56HW
165DB
16-Mbit
HM51W
18165BTT)
24C02)
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Untitled
Abstract: No abstract text available
Text: H B 56U W 272E -6B /7B /8B 2,097,152-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8 byte DIMM HITACHI ADE-203-519 A (Z) Preliminary - Rev. 0.1 May 22, 1996 Description The H B56U W 272E belongs to 8 Byte DIMM (Dual In-line M emory M odule) fam ily, and has been
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152-word
72-bit
168-pin
ADE-203-519
17805BTT)
16-bit
74LVT16244)
HB56UW
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7405 truth table
Abstract: TTL IC 7405
Text: VIS VG26 V (S)17405 4,194,304x4-B it CMOS Dynamic RAM Description The device C M O S D ynam ic RAM organized as 4 ,1 9 4 ,3 0 4 w o rd s x 4 bits w ith extended d ata out access m ode. It is fa bricated w ith an advanced subm icron C M O S te ch n o lo g y and designed to operate from a single
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304x4-B
26/24-pin
50/6S
26/24-P
7405EJ-5
127irun)
G5-0124
7405 truth table
TTL IC 7405
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51w4265
Abstract: No abstract text available
Text: HM51W4265C Series 262,144-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-477A Z Rev. 1.0 Jul. 31, 1996 Description The Hitachi HM51W4265C Series is a CMOS dynamic RAM organized as 262,144-word x 16-bit. HM51W4265C Series has realized higher density, higher performance and various functions by employing
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HM51W4265C
144-word
16-bit
ADE-203-477A
16-bit.
51w4265
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Untitled
Abstract: No abstract text available
Text: VIS VG26 V (S)17400E 4 ,1 9 4 ,3 0 4 x 4 - Bit CMOS Dynamic RAM Description The device is C M O S D ynam ic RAM organized as 4 ,1 9 4 ,3 0 4 w o rd s x 4 bits. It is fabricated w ith an advanced subm icron C M O S te ch n o lo g y and designed to operate from a single 5V only
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17400E
17400EJ
26/24-Pin
127irun)
1G5-0142
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Nippon capacitors
Abstract: No abstract text available
Text: HB56U W4 72 E- 6B /7B /8B 4,194,304-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline buffered 8 BYTE DIMM HITACHI ADE-203-577 Z Preliminary Rev.0.0 Apr. 30, 1996 D escription The HB56UW 472E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
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HB56U
304-word
72-bit
168-pin
ADE-203-577
HB56UW
16-Mbit
16405B
16-bit
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: HM5164805F Series HM5165805F Series 64 M EDO DRAM 8-Mword x 8-bit 8 k Refresh/4 k Refresh HITACHI ADE-203-1057 (Z) Preliminary Rev. 0.0 May. 25, 1999 Description The Hitachi HM5164805F Series, HM5165805F Series are 64M-bit dynamic RAMs organized as 8,388,608-word x 8-bit. They have realized high performance and low power by employing CMOS process
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HM5164805F
HM5165805F
ADE-203-1057
64M-bit
608-word
32-pin
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Untitled
Abstract: No abstract text available
Text: HM51W16160A Series HM51W18160A Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-217B Z Rev. 2.0 Jul. 2, 1996 Description The Hitachi HM51W16160A Series, HM51W18160A Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance
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HM51W16160A
HM51W18160A
1048576-word
16-bit
ADE-203-217B
576-word
16-bit.
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TP5510WM
Abstract: fsd 200 vf 10
Text: February 1997 TP5510 Full Duplex Analog Front End AFE for Consumer Applications General Description Features The TP5510 consists of a jx-law monolithic AFE device uti lizing the A /D and D /A conversion architecture shown in Figure 1, and a serial data interface. The device is fabricat
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TP5510
TP5510WM
fsd 200 vf 10
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"soj 26" dram 80 ns
Abstract: No abstract text available
Text: IBM0116400 IBM0116400B 4M x 4 DRAM Features • 4,194,304 w ord by 4 bit organization • S ingle 3.3V + 0.3V o r 5.0V + 0.5V power supply • 4096 refresh cycles/64m s • Low Power Dissipation - Active max - 95m A /85m A /75m A /65m A - S tandby (TTL Inputs) - 2 .0 m A (max)
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IBM0116400
IBM0116400B
cycles/64m
J-28/24
ilx725m
J-26/24
ilx675m
MMDD30DSU-00
43G9611
"soj 26" dram 80 ns
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Nippon capacitors
Abstract: No abstract text available
Text: HB56HW164DB Series, HB56HW165DB Series 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-699A Z Rev. 1.0 Dec. 27, 1996 Description The HB56HW164DB is a 1M x 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 4 pieces of 16-Mbit DRAM (HM51W16165) sealed in TSOP package and 1 pieces
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HB56HW164DB
HB56HW165DB
576-word
64-bit
ADE-203-699A
16-Mbit
HM51W16165)
24C02)
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: VG26 V (S)18165C 1,048,576x16-B it CMOS Dynamic RAM VIS Description The device C M O S D ynam ic RAM organized as 1,048,576 w o rd s x 16 bits w ith extended d ata out access m ode. It is fa bricated w ith an advanced subm icron C M O S te ch n o lo g y and designed to operate from a single
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18165C
576x16-B
42-pin
50/60ns
G5-0147
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