DIODE BZ
Abstract: sk35bz
Text: SK 35 BZ '#,- '##- ' #- / + 01 2 ' 5&& $0&& ' 3&& $8&& * + 3& 4 ,601 7&3 ,601 7$8 $9&& $%&& ,601 7$% Characteristics Symbol Conditions SEMITOP 2 1-phase bridge rectifier with one diode arm and one thyristor arm SK 35 BZ Values Units /( *+ 3&4
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Abstract: No abstract text available
Text: SK 35 BZ FBKL FBBLH F<BL NG J OP Q F TEE COEE F REE CWEE ;I- J RE S$> KUOP=VER KUOP=VCW CXEE CDEE KUOP=VCD Characteristics Symbol Conditions SEMITOP 2 1-phase bridge rectifier with one diode arm and one thyristor arm SK 35 BZ Features # $%&' * +,-./0 # 10, -)2,3 &%40*.0/
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DIODE BZ
Abstract: sk35bz BZ diode
Text: SK 35 BZ '#,- '##- ' #- / + 01 2 ' 5&& $0&& ' 3&& $8&& * + 3& 4 ,601 7&3 ,601 7$8 $9&& $%&& ,601 7$% Characteristics Symbol Conditions SEMITOP 2 1-phase bridge rectifier with one diode arm and one thyristor arm SK 35 BZ Values Units /( *+ 3&4
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DIODE BZ
Abstract: No abstract text available
Text: SKKT 57, SKKH 57, SKKT 57B THYRISTOR SEMIPACK 1 Thyristor / Diode Modules SKKT 57 NOMP NOOP= NDOP QJOPM R SB I G1&321.1 K&0.% +- 5- '2).-.* -7%(&'2-)H N SVV TAVV TBVV TZVV TSVV N UVV TCVV T]VV T@VV TUVV QJIN R BB I G*2)> TUVW J5 R UV XEH MYYJ BZ[VU? MYYJ BZ¥VU?
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Untitled
Abstract: No abstract text available
Text: SK200GD066T =' U BT VIA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT QI:9 =W U BT VI <I =W U @[T VI <I¥; SEMITOP 4 IGBT Module .5'( YZZ Q @[O J =' U [Z VI @C@ J OZZ J ] BZ Q =W U @BT VI Y a' =' U BT VI bb J =' U [Z VI [b J @BZ
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SK200GD066T
c9-00&
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Untitled
Abstract: No abstract text available
Text: SK 35 BZ '#,- '##- ' #- / + 01 2 ' 5&& $0&& ' 3&& $8&& * + 3& 4 ,601 7&3 ,601 7$8 $9&& $%&& ,601 7$% Characteristics Symbol Conditions SEMITOP 2 1-phase bridge rectifier with one diode arm and one thyristor arm Values Units /( *+ 3&4 01
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Untitled
Abstract: No abstract text available
Text: SKKT 57 H4, SKKH 57 H4 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 1 Thyristor / Diode Modules SKKT 57 H4 NOMP NOOP= NDOP N CTVV CAVV N CVVV CCVV Symbol Conditions Values Units *2 > TUVW J5 R UB GTVVH XEW LA[TUVW J& R ¥B XEW ]C [ ]@ LA[TUV^W J& R AB XEW ]C [ ]@
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bz 148
Abstract: 1S2588 WZ-061 Zener wz-192 WZ-071 WZ-090 WZ 061 Zener c9v WZ090 wz-040
Text: 7954734 SAKATA U S A CORP IP ? JRC DE I 7T S 4734 K ZENER DIODES ZEN ER VO LTAGE TYPE V NOM. - BZ-050 5.0 WZ-054 BZ-054 5.4 10 - 10 - 1W - - 0.5 - 10 30 10 30 EZ-062 WZ-061 BZ-061 6.1 0.5 10 30 EZ-065 WZ-065 BZ-065 6.5 0.5 10 30 EZ-070 WZ-071 BZ-071 7.1
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500mW
WZ-032
WZ-036
WZ-040
WZ-046
WZ-050
BZ-050
EZ-055
WZ-054
bz 148
1S2588
WZ-061
Zener wz-192
WZ-071
WZ-090
WZ 061
Zener c9v
WZ090
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WZ-071
Abstract: wz-061 Zener c9v WZ 061 wz-040 eZ-081 WZ-046 WZ-075 Zener wz-192
Text: K ZEN ER VO LTAGE TYPE LOW NOISE V NOM. 500mW - 3.2 - 10 - 10 - WZ-061 WZ-065 BZ-061 BZ-065 BZ-071 WZ-075 6.1 6.5 7.1 BZ-075 BZ-081 WZ-081 7.5 8.1 - 10 30 10 30 0.5 10 30 0.5 10 30 10 - 100 4V,50MHz 1S2139-C 10-16® 4V 4~14® 10V - 100® 4V,50MHz - 40® 10V,50MHz
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BZ 85 18 zener diode
Abstract: zener diode BZ 22 zener diode BZ 100 zener diode BZ 56 Zener BZ DIODE BZ BZ 85 58 zener diode zener diode 5224 5252 diode 5248B
Text: SURFACE MOUNT ZENER DIODES SPECIFICATION 52xx SERIES SURFACE MOUNT ZENER DIODE (SOT-23 PACKAGE) ELECTRICIAL CHARACTERISTICS (Ta = 25°C) VF = 0.9v MAX @ lF = 10mA FOR ALL TYPES (CASE 37) Surge Part No, SM BZ SM BZ SM B Z SM B Z SM B Z SM B Z SM BZ SM B Z
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OT-23
BZ 85 18 zener diode
zener diode BZ 22
zener diode BZ 100
zener diode BZ 56
Zener BZ
DIODE BZ
BZ 85 58 zener diode
zener diode 5224
5252 diode
5248B
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15 BZX
Abstract: bzx c 1v4 BZX 55 f BZX55 BZ102-1V4 27 bzx 41880
Text: Diodes Regulator diodes Maximum ratings Characteristics /F mA s thJA °C/W V £/p at BZ 102/0V7 18 250 <420 0 .6 5-0 .7 5 BZ 102/1V4 18 130 S 420 CO I en Fig. Nr. ^F mA / R at 5 UF at /p = 5 mA Ur /f at ¡F ma V O pA 10 '4/°C 1 5 6.5 5 -2 6 5 1 5 113.0
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102/0V7
102/1V4
102/2V8
102/3V4
15 BZX
bzx c 1v4
BZX 55 f
BZX55
BZ102-1V4
27 bzx
41880
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BZ102
Abstract: TFK U 217 B bz102-2v8 5V stabilisator f 102 TFK 19 001
Text: BZ 102/. Silizium-Diffusions-Stabilisator-Dioden Silicon diffusion voltage stabilising diodes Anwendungen: Spannungsstabilisierung und Spannungsbegrenzung Applications: Voltage stabilisation and voltage regulation Abmessungen in mm Dimensions in mm Normgehäuse
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102/1V
BZ102/2V8
BZ102
TFK U 217 B
bz102-2v8
5V stabilisator
f 102
TFK 19 001
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FZD10
Abstract: FZD12 FZD15 FZD180 FZD22 FZD27 FZD33 FZD39 FZD47 FZ-01
Text: S"ÎC D I 7 * ^ 2 3 ? S G S-THOMSON 59C # THOMSON-CSF QQ0Eb?â D T- bZ$ 0267é FZD6V8— ►FZD180 DIVISION SEMICONDUCTEURS - BIDIRECTIONALTRANSIENT VOLTAGE SUPPRESSORS DIODES D E PROTECTION BIDIRECTIONNELLES TRANSIL TR A N SIEN T V O LTA G E SU PP RESSO R DIODES ESP EC IA LLY
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FZD180
FZD10
FZD12
FZD15
FZD180
FZD22
FZD27
FZD33
FZD39
FZD47
FZ-01
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bzx55
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b 'lE D m J ^53*131 002bflQ2 M'IS * A P X _ bZ X 55 SERIES VOLTAGE REGULATOR DIODES Silicon planar diodes in a DO-35 envelope intended for use as low-voltage stabilizers or voltage references. The series covers the normalized range of nominal working voltages from 2,4 V to 75 V
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002bflQ2
DO-35
kept33
BZX55
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T55B
Abstract: .t55b
Text: BZM55B. T e MIC S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Saving space • H erm etic sealed parts • Fits onto SO D 323 / SO T 23 footprints • E lectrical data identical with the devices BZ T55B . / TZM B. • Very sharp reverse characteristic
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BZM55B.
03-May-96
T55B
.t55b
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BZX 24 85C
Abstract: 85c91 C8210 diodes de regulation de tension C6250 BZX85 C27 zener BZX 85c 35 BZX85C7V5 bzx 85 zener zener 9v1
Text: 22 DIODES DE RÉGULATION DE TENSION zener diodes Ps T Y P ES 1,3 W nxy nxy nxy nxy nxy nxy ic IX ? txy i*xy nxy / >ZM W (m Al tamb = 25°C B ZX 85C 5V1 B ZX 85 C 5V6 BZX 85 C 6V2 BZX 85 C 6V8 BZX85C 7V 5 BZX 85 C 8V2 BZX 85 C 9V1 BZX 85 C 10 BZ X 85 C 11
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85C5V1
BZX85C7V5
1500i
BZX 24 85C
85c91
C8210
diodes de regulation de tension
C6250
BZX85 C27
zener BZX 85c 35
bzx 85 zener
zener 9v1
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zener IN 5232B
Abstract: 5252B
Text: • bbS3T31 OOHSTQfl TT? H A P X N AMER PHILIPS/DISCRETE PMBZ 5226B to b7E J> PMBZ 5257B y v . SILICON PLANAR VOLTAGE REGULATOR DIODES Low power general purpose voltage regulator diodes in a microminiature plastic envelope intended for application in th ick and th in film circuits. The series covers the range o f nominal working voltages from
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bbS3T31
5226B
5257B
5226B
5242B
5243B
D02ST11
bb53m
zener IN 5232B
5252B
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bzy88c10 zener
Abstract: BZY88C5V1 motorola zener diodes zener 5339 BZY88-C5V1 zener 1N4742a Zener motorola 1N4732 BZY88C BZY88C3V9 1N5231
Text: Zener and Avalanche Regulator Diodes In every language under the sun, the name most com m only associated w ith solid-state regulator and reference devices is M otorola. A pioneer in Zener diodes developm ent. M otorola has consistently led the industry in parameter improvements, packaging proliferation and specifications innovation. Today,
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process58A
1N4759A
1N5333
1N5334
1N5335
1N5336
1N5337
1N5340
1N5341
1N5342
bzy88c10 zener
BZY88C5V1
motorola zener diodes
zener 5339
BZY88-C5V1 zener
1N4742a Zener
motorola 1N4732
BZY88C
BZY88C3V9
1N5231
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2S3280
Abstract: BZX 55 C 5V 8 Zener c9v S7-300 bzx550 BZX55 BZX55C c6v6 22s256 Crimson Semiconductor
Text: CRinSON SE MIC OND UCTOR INC 1 TT Ì>[F| E 5 1 4 EHb 00D03SA 1 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC : 99D 0 0 3 5 8 D T"-//" ZENER DIODES Z e n e M X o d « « with Py — 500 mW Typ# Izr tot V BZX S 5 / C 2 V 4 N o tM a n de aM Etoctffcal characteristic«
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00D03SA
BZX55/C
2S3280
BZX 55 C 5V 8
Zener c9v
S7-300
bzx550
BZX55
BZX55C
c6v6
22s256
Crimson Semiconductor
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52B zener
Abstract: 5233B 5241b SMBZ-5250B 47B SOT23 5252B SMBZ-5239B SMBZ-5245B SMBZ5230B SMBZ-5230B
Text: SMBZ5230 THRU SMBZ5257 SILICON PLANAR ZENER DIODES, 500mW, SOT-23 PACKAGE PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN m m Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 3.0 2.6 0 .1 4 - * ^ 0.09 0.48 0.38 «a 3 44 2.6 RQ.1 .004 1-° ? 0.89 0,60 0.40 =
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SMBZ5230
SMBZ5257
500mW,
OT-23
SMBZ5230B
SMBZ5239B
SMBZ5248B
SMBZ5257B=
595-ISIS
52B zener
5233B
5241b
SMBZ-5250B
47B SOT23
5252B
SMBZ-5239B
SMBZ-5245B
SMBZ5230B
SMBZ-5230B
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zener diode BZ
Abstract: zener BZ diode zener bz DIODE BZ JE SOT23 bz diode zener Diode B 19 Zener Diode minimelf ZENER bzy sILICON ZENER DIODE
Text: ZENER DIODE NUMDERING SYSTEM d SOD-123: 1. Surface-Mount: MMSZxxxxy MMSZ = Popular industry designation for SOD-123 Zener diode xxxx = JE D E C sequence y = Zener voltage tolerance designator “Blank’’ = ±5% for M MSZ46xx series only) B = ±5% (for MMSZ52xx series only)
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fDO-213AB1:
GLL47xxy
N47xx"
ZGL41-xxxy
ZM47xx
BZX85-yxx
DO-35:
DO-35
BZX79
zener diode BZ
zener BZ
diode zener bz
DIODE BZ
JE SOT23
bz diode
zener Diode B 19
Zener Diode minimelf
ZENER bzy
sILICON ZENER DIODE
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BZX88C15
Abstract: BZX88-C11 diode l2 32 diode BAW65 f021 Z6 DIODE 2N929 2N930 BAW63 BFS36
Text: MICRO-E MICRO-E PRODUCT LIST W h ere approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors T yp e Device marking Nearest m etal can or IE-line equivalent B .S . num ber* Page
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BFS36
2N930
BS9365
BAW63
BS9302
BFS36A
2N929
BAW63A
BZX88C15
BZX88-C11
diode l2 32 diode
BAW65
f021
Z6 DIODE
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Untitled
Abstract: No abstract text available
Text: Hybrid IC s B ROHM Hybrid ICs ROHM hybrid ICs are of five types so that the customer can make a selection depending on the necessary degree of integration, operating conditions, price, or time for delivery: 1) BX series ICs, transistors, diodes, resistors and capacitors are
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CR2000
CR3000)
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C5VI
Abstract: C5V1 c3v9 c5v6 C6V2 55 c5v1 BZX84 BZX84C BZX84-C18 BZX84-C27
Text: BZX84C series CDIL SILICON PLANAR VOLTAGE REGULATOR DIODES Low pow er general purpose voltage regulator diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC _3.0_ 2.8 0.48 0.38 3 = CATHODE 0.14 3 2.6 2.4 0.60 0.40 _T02 0.89"
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BZX84C
BZX84-C3V3
BZX84-C7V5
BZX84-C18
BZX84-C43
BZX84-C27
C5VI
C5V1
c3v9
c5v6
C6V2
55 c5v1
BZX84
BZX84-C18
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