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    BY239 1500 Search Results

    BY239 1500 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    150-01A12L Coilcraft Inc RF inductor, tunable, Carbonyl J core, RoHS Visit Coilcraft Inc Buy
    150-02A08L Coilcraft Inc RF inductor, tunable, aluminum core, RoHS Visit Coilcraft Inc Buy
    150-05 Coilcraft Inc General Purpose Inductor, 0.116uH, Air-Core, 2727, Visit Coilcraft Inc Buy
    150-06A08L Coilcraft Inc RF inductor, tunable, aluminum core, RoHS Visit Coilcraft Inc Buy
    150-07J08L Coilcraft Inc Variable Inductor, 0.222uH Min, 0.268uH Max, Carbonyl-Core, Unshielded, 2727, RADIAL LEADED, ROHS COMPLIANT Visit Coilcraft Inc

    BY239 1500 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KH5395

    Abstract: KH4001 BY126 KH4007 KH4004 BY239-600 40KHR4 by239 diode BY126 datasheet 1205KH14
    Text: KHEL KHEL Home About Us Products Wafer Fab QA & QC Other Activities Contact RECTIFIER DIODES AXIAL MOULDED RECTIFIERS Type No 1 AMPERE KH4001 KH4002 KH4003 KH4004 KH4005 KH4006 KH4007 KH4007A KH4007B 1.5 AMPERE KH5391 KH5392 KH5393 KH5395 KH5397 KH5398 KH5399


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    PDF KH4001 KH4002 KH4003 KH4004 KH4005 KH4006 KH4007 KH4007A KH4007B KH5391 KH5395 KH4001 BY126 KH4007 KH4004 BY239-600 40KHR4 by239 diode BY126 datasheet 1205KH14

    epsilam 10

    Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial


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    PDF LLE18150X epsilam 10 BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239

    epsilam 10

    Abstract: BY239 MLC431 BDT91 LFE18500X SC15 erie 1250-003 diode BY239 iw16
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LFE18500X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors December 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial


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    PDF LFE18500X epsilam 10 BY239 MLC431 BDT91 LFE18500X SC15 erie 1250-003 diode BY239 iw16

    epsilam 10

    Abstract: BDT91 BY239 LFE15600X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LFE15600X NPN microwave power transistor Product specification Supersedes data of January 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


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    PDF LFE15600X SCA53 127147/00/02/pp12 epsilam 10 BDT91 BY239 LFE15600X

    philips ferrite 4330-030

    Abstract: philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


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    PDF M3D159 LLE18010X SCA63 125002/00/02/pp12 philips ferrite 4330-030 philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips

    BDT91

    Abstract: BY239 LLE15370X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE15370X NPN microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


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    PDF LLE15370X SCA53 127147/00/02/pp12 BDT91 BY239 LLE15370X

    LLE16350X

    Abstract: BDT91 BY239
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE16350X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 03 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


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    PDF LLE16350X SCA53 127121/00/04/pp12 LLE16350X BDT91 BY239

    LX1214E500X

    Abstract: BD239 BY239 SC15
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LX1214E500X NPN microwave power transistor Preliminary specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Preliminary specification NPN microwave power transistor


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    PDF LX1214E500X SCA53 127147/00/02/pp12 LX1214E500X BD239 BY239 SC15

    equivalent of SL 100 NPN Transistor

    Abstract: TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18040X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor LLE18040X FEATURES QUICK REFERENCE DATA


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    PDF M3D159 LLE18040X SCA63 125002/00/02/pp12 equivalent of SL 100 NPN Transistor TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR

    philips ferrite material specifications

    Abstract: BD239 BY239 LXE15450X SC15 mlc444
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LXE15450X NPN microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor


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    PDF LXE15450X SCA53 127147/00/02/pp12 philips ferrite material specifications BD239 BY239 LXE15450X SC15 mlc444

    diode BY239

    Abstract: BD239 BY239 LLE16045X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE16045X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


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    PDF LLE16045X SCA53 127147/00/02/pp12 diode BY239 BD239 BY239 LLE16045X

    10C1

    Abstract: 330E BDT91 BY239 IEC134 LLE18300X VC60 copper permittivity d 331 TRANSISTOR equivalent 229 transistor npn
    Text: • f *< UK DISCRETE SEMICONDUCTORS M m S^ EETT LLE18300X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC 15 October 1992 Philips Semiconductors PHILIPS Preliminary «pacification Philip» Semiconductora


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    PDF LLE18300X DD3f033 10C1 330E BDT91 BY239 IEC134 LLE18300X VC60 copper permittivity d 331 TRANSISTOR equivalent 229 transistor npn

    philips ferrite material specifications 12nc

    Abstract: Class E amplifier BDT91 BY239 LLE18150X Tekelec diode
    Text: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigltated structure provides high emitter efficiency


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    PDF LLE18150X 7110fi5b philips ferrite material specifications 12nc Class E amplifier BDT91 BY239 LLE18150X Tekelec diode

    Transistor Equivalent list

    Abstract: J3 transistor by239 1500 100A101kp diode J3
    Text: Philips Semiconductors Product specification NPN microwave power transistor LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb = 25 °C in a common emitter class AB


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    PDF LFE15600X Transistor Equivalent list J3 transistor by239 1500 100A101kp diode J3

    diode BY239

    Abstract: bd239 equivalent BD750 Transistor Equivalent list BD 750 PERMITTIVITY* 2.55
    Text: Philips Sem iconductors Product specification NPN m icrow ave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency


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    PDF LLE16045X diode BY239 bd239 equivalent BD750 Transistor Equivalent list BD 750 PERMITTIVITY* 2.55

    erie 1500 z

    Abstract: BDT91 BY239 LFE15600X SC15 by239 1500
    Text: Philips Semiconductors Product specification NPN microwave power transistor LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides


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    PDF LFE15600X erie 1500 z BDT91 BY239 LFE15600X SC15 by239 1500

    by239

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistor LLE16350X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb = 25 °C in a common emitter class AB


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    PDF LLE16350X by239

    Transistor AND DIODE Equivalent list

    Abstract: 100A101kp
    Text: Philips Semiconductors Product specification LLE15370X NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency


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    PDF LLE15370X MBD764 Transistor AND DIODE Equivalent list 100A101kp

    B0239

    Abstract: Transistor AND DIODE Equivalent list Transistor Equivalent list LC437 AB-162 transistor
    Text: Philips Semiconductors Preliminary specification NPN microwave power transistor LX1214E500X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb - 25 °C in a common emitter class AB.


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    PDF LX1214E500X 100A1201kp B0239 Transistor AND DIODE Equivalent list Transistor Equivalent list LC437 AB-162 transistor

    m 32 ab transistor

    Abstract: mlc444 bd239 equivalent
    Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated common-emitter structure provides high emitter


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    PDF LXE15450X m 32 ab transistor mlc444 bd239 equivalent

    Untitled

    Abstract: No abstract text available
    Text: * M * DISCRETE SEMICONDUCTORS LLE16350X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC15 October 1992 Philips Semiconductors PHILIPS bbS3T31 003301b ^ P h ilip s S em iconductors P relim inary sp e cifica tio n


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    PDF LLE16350X bbS3T31 003301b 33Q2M

    Untitled

    Abstract: No abstract text available
    Text: * f *< UK DISCRETE SEMICONDUCTORS LLE18300X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC 15 October 1992 Philips Semiconductors PHILIPS QD33025 Preliminary specification Philips Sem iconductors


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    PDF LLE18300X QD33025 FO-229 bb53T31 DD33033

    cb pj 47 diode

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b^E J> bbS3T31 DD3227fl 070 H A P X Product specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor _ LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors


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    PDF bbS3T31 DD3227fl LFE15600X cb pj 47 diode

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of December 1994 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor LLE18010X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors


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    PDF OT437A 125002/00/02/pp12