Untitled
Abstract: No abstract text available
Text: BY239-1250 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current10 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.140 V(FM) Max.(V) Forward Voltage1.45 @I(FM) (A) (Test Condition)30 @Temp. (øC) (Test Condition)
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BY239-1250
Current10
Current500u
StyleTO-220AA
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KH5395
Abstract: KH4001 BY126 KH4007 KH4004 BY239-600 40KHR4 by239 diode BY126 datasheet 1205KH14
Text: KHEL KHEL Home About Us Products Wafer Fab QA & QC Other Activities Contact RECTIFIER DIODES AXIAL MOULDED RECTIFIERS Type No 1 AMPERE KH4001 KH4002 KH4003 KH4004 KH4005 KH4006 KH4007 KH4007A KH4007B 1.5 AMPERE KH5391 KH5392 KH5393 KH5395 KH5397 KH5398 KH5399
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KH4001
KH4002
KH4003
KH4004
KH4005
KH4006
KH4007
KH4007A
KH4007B
KH5391
KH5395
KH4001
BY126
KH4007
KH4004
BY239-600
40KHR4
by239
diode BY126 datasheet
1205KH14
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epsilam 10
Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239
Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial
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LLE18150X
epsilam 10
BY239
BDT91
LLE18150X
SC15
erie 1250-003
diode BY239
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epsilam 10
Abstract: BY239 MLC431 BDT91 LFE18500X SC15 erie 1250-003 diode BY239 iw16
Text: DISCRETE SEMICONDUCTORS DATA SHEET LFE18500X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors December 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial
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LFE18500X
epsilam 10
BY239
MLC431
BDT91
LFE18500X
SC15
erie 1250-003
diode BY239
iw16
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epsilam 10
Abstract: BDT91 BY239 LFE15600X
Text: DISCRETE SEMICONDUCTORS DATA SHEET LFE15600X NPN microwave power transistor Product specification Supersedes data of January 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors
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LFE15600X
SCA53
127147/00/02/pp12
epsilam 10
BDT91
BY239
LFE15600X
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philips ferrite 4330-030
Abstract: philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors
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M3D159
LLE18010X
SCA63
125002/00/02/pp12
philips ferrite 4330-030
philips ferrite 4b1
TRansistor 648
BY239
BDT91
LLE18010X
j160 capacitor philips
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BDT91
Abstract: BY239 LLE15370X
Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE15370X NPN microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors
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LLE15370X
SCA53
127147/00/02/pp12
BDT91
BY239
LLE15370X
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LLE16350X
Abstract: BDT91 BY239
Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE16350X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 03 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors
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LLE16350X
SCA53
127121/00/04/pp12
LLE16350X
BDT91
BY239
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equivalent of SL 100 NPN Transistor
Abstract: TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18040X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor LLE18040X FEATURES QUICK REFERENCE DATA
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M3D159
LLE18040X
SCA63
125002/00/02/pp12
equivalent of SL 100 NPN Transistor
TRANSISTOR cq 817
TRansistor 648
SL 100 NPN Transistor
BDT239
05API
philips ferrite material specifications
BY239
LLE18040X
5344 TRANSISTOR
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philips ferrite material specifications
Abstract: BD239 BY239 LXE15450X SC15 mlc444
Text: DISCRETE SEMICONDUCTORS DATA SHEET LXE15450X NPN microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor
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LXE15450X
SCA53
127147/00/02/pp12
philips ferrite material specifications
BD239
BY239
LXE15450X
SC15
mlc444
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10C1
Abstract: 330E BDT91 BY239 IEC134 LLE18300X VC60 copper permittivity d 331 TRANSISTOR equivalent 229 transistor npn
Text: • f *< UK DISCRETE SEMICONDUCTORS M m S^ EETT LLE18300X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC 15 October 1992 Philips Semiconductors PHILIPS Preliminary «pacification Philip» Semiconductora
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LLE18300X
DD3f033
10C1
330E
BDT91
BY239
IEC134
LLE18300X
VC60
copper permittivity
d 331 TRANSISTOR equivalent
229 transistor npn
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philips ferrite material specifications 12nc
Abstract: Class E amplifier BDT91 BY239 LLE18150X Tekelec diode
Text: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigltated structure provides high emitter efficiency
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LLE18150X
7110fi5b
philips ferrite material specifications 12nc
Class E amplifier
BDT91
BY239
LLE18150X
Tekelec diode
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Transistor Equivalent list
Abstract: J3 transistor by239 1500 100A101kp diode J3
Text: Philips Semiconductors Product specification NPN microwave power transistor LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb = 25 °C in a common emitter class AB
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LFE15600X
Transistor Equivalent list
J3 transistor
by239 1500
100A101kp
diode J3
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diode BY239
Abstract: bd239 equivalent BD750 Transistor Equivalent list BD 750 PERMITTIVITY* 2.55
Text: Philips Sem iconductors Product specification NPN m icrow ave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency
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LLE16045X
diode BY239
bd239 equivalent
BD750
Transistor Equivalent list
BD 750
PERMITTIVITY* 2.55
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by239
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor LLE16350X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb = 25 °C in a common emitter class AB
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LLE16350X
by239
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Transistor AND DIODE Equivalent list
Abstract: 100A101kp
Text: Philips Semiconductors Product specification LLE15370X NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency
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LLE15370X
MBD764
Transistor AND DIODE Equivalent list
100A101kp
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j78 transistor equivalent
Abstract: Transistor Equivalent list j160 capacitor philips transistor BD239 equivalent bd239 equivalent J6 transistor BD239 BY239 LLE16045X SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor LLE16045X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides
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LLE16045X
OT437A.
j78 transistor equivalent
Transistor Equivalent list
j160 capacitor philips
transistor BD239 equivalent
bd239 equivalent
J6 transistor
BD239
BY239
LLE16045X
SC15
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diode BY239
Abstract: Transistor Equivalent list BY239 Transistor AND DIODE Equivalent list philips ferrite 4b1 erie 1250-003 copper permittivity BDT91 LLE15370X SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor FEA TU R ES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high V S W R • Interdigitated structure provides high emitter efficiency
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LLE15370X
OT437A.
diode BY239
Transistor Equivalent list
BY239
Transistor AND DIODE Equivalent list
philips ferrite 4b1
erie 1250-003
copper permittivity
BDT91
LLE15370X
SC15
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m 32 ab transistor
Abstract: mlc444 bd239 equivalent
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated common-emitter structure provides high emitter
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LXE15450X
m 32 ab transistor
mlc444
bd239 equivalent
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diode BY239
Abstract: bd239 equivalent Transistor Equivalent list MLC446 copper permittivity 43081 BD239 BY239 LXE15450X SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor LXE15450X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R amplifier. • Interdigitated common-emitter
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LXE15450X
MLC446
OT439A.
diode BY239
bd239 equivalent
Transistor Equivalent list
MLC446
copper permittivity
43081
BD239
BY239
LXE15450X
SC15
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Untitled
Abstract: No abstract text available
Text: * M * DISCRETE SEMICONDUCTORS LLE16350X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC15 October 1992 Philips Semiconductors PHILIPS bbS3T31 003301b ^ P h ilip s S em iconductors P relim inary sp e cifica tio n
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LLE16350X
bbS3T31
003301b
33Q2M
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Untitled
Abstract: No abstract text available
Text: * f *< UK DISCRETE SEMICONDUCTORS LLE18300X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC 15 October 1992 Philips Semiconductors PHILIPS QD33025 Preliminary specification Philips Sem iconductors
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LLE18300X
QD33025
FO-229
bb53T31
DD33033
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cb pj 47 diode
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b^E J> bbS3T31 DD3227fl 070 H A P X Product specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor _ LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors
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bbS3T31
DD3227fl
LFE15600X
cb pj 47 diode
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of December 1994 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor LLE18010X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors
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OT437A
125002/00/02/pp12
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