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    UC135 Search Results

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    UC135 Price and Stock

    Rochester Electronics LLC FAN53611AUC135X

    IC REG BUCK 1.35V 1A 6WLCSP
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    DigiKey FAN53611AUC135X Bulk 792
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    Flip Electronics FAN53611AUC135X

    IC REG BUCK 1.35V 1A 6WLCSP
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    DigiKey FAN53611AUC135X Reel 2,000
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    onsemi FAN53611AUC135X

    IC REG BUCK 1.35V 1A 6WLCSP
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    Avnet Americas FAN53611AUC135X Reel 0 Weeks, 2 Days 2,273
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    Newark FAN53611AUC135X Reel 3,000
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    Rochester Electronics FAN53611AUC135X 29,800 1
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    Flip Electronics FAN53611AUC135X 18,000
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    Inventek Systems LLC ISM43362-M3G-L44-U-C1.3.5

    RF TXRX MODULE WIFI U.FL SMD
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    DigiKey ISM43362-M3G-L44-U-C1.3.5 Tray 648
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    Inventek Systems LLC ISM43362-M3G-L44-U-C1.3.5-SPI

    RF TXRX MODULE WIFI U.FL SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ISM43362-M3G-L44-U-C1.3.5-SPI Tray 648
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    Find more UC135 price and stock on Findchips.com

    UC135 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UC135 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    UC135 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    UC135 Unknown Discontinued Transistor Data Book 1975 Scan PDF

    UC135 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    U1897E

    Abstract: U1899E 2N4978 U1898E uc250 uc251 2N4393 2N4858 2N4977 UC130
    Text: *BVDgo Case Ciss or Type Style Geometry Max BVgss Number TO (pF) Min (V) Crss Max (pF) Vgs (off) Min (V) Vgs (off) Max (V) Idss Min (v) 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392 2N4393 2N4856 2N4856A 2N4857 2N4857A 2N4858 2N4858A


    Original     		2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392 U1897E U1899E 2N4978 U1898E uc250 uc251 2N4393 2N4858 2N4977 UC130 PDF

    E101 FET

    Abstract: c681 FET FET C681 50P3P U320 FET 2SK160 NEC u320 motorola KE4859 Z3M g BFS21A
    Text: JUNCTION FET Item Number Part Number Manufacturer V BR GSS loss Uta VaS(Off) lass elsa Max (Vl (AJ Min (S) Max Max (V) Max (F) (A) Po Max (W) Derate at Toper (wre) tOe) Package Max Style N-Channel JFETs, (Cont'd) 5 10 2N5432 J106 J106-18 J106-18 J106-18 TPJ106


    Original     		2N5432 J106-18 TPJ106 SMPBF246C TMPFBF246C BF246 OT-143 E101 FET c681 FET FET C681 50P3P U320 FET 2SK160 NEC u320 motorola KE4859 Z3M g BFS21A PDF

    UC754

    Abstract: UC758
    Text: ATCdL LOW P O W E R FIELD E FFEC T T R A N S IS T O R S IMliOMtL ¡PÖJM^©©!! G^tgKlÄMilL Type Number •BVDgo or Case BVgss Style Min (T O - Geometry (V) Ciss Max (pF) Crss Max (PF) Vgs (off) Min Max (V) lgss Max (nA) Yls Min Max (uMhos) Idss Min Max


    OCR Scan     		KK4302 KK4303 KK4304 UC100 UC105 UC110 UC120 UC130 UC135 UC701 UC754 UC758 PDF

    TIL78

    Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
    Text: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE


    OCR Scan     		PDF

    TIL78

    Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


    OCR Scan     		NPN110. fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; TIL78 SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06 PDF

    2N4241

    Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C


    OCR Scan     		NPN110. 12X084B 12X165 VCEO-15V hFE-30 ICBO-200mA PA-300mW; VCEO-55V; hFE-100 Pt-25W; 2N4241 OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF

    IN5314

    Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
    Text: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)


    OCR Scan     		UC4250* UC42500 MIL-STD-883C, 19S00/ 2N7109* SDF8200 FMN35 SDF8201Â FMNZ35 SDF8202 IN5314 IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297 PDF

    U1898E

    Abstract: 2n4447 UC251
    Text: ra@ iyj Tr ©ätäcl © LOW P O W E R FIELD E FFE C T T R A N S IS T O R S WO¥©D» 10 M=©CMG*L FUT? •BVDgo or BVgss Min (V Ciss Max (pF) Crss Max (pF) Vgs (off) Min Max (V) Idss Min Max (mA) Igss or •Idgo Max (nA) R(on) Max (ohms) III Typ* Number


    OCR Scan     		KK4857 KK4858 KK4859 KK4860 KK4861 U1897E U1898E U1899E UC100 UC105 2n4447 UC251 PDF

    2NB906

    Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
    Text: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style


    OCR Scan     		UC4250» UC4250C» MIL-STD-883C, 2N2609 2N3821 2N3822 2N3823 2N4856 2N4857 2N48S8 2NB906 IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92 PDF

    GM300

    Abstract: CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


    OCR Scan     		NPN110. THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 GM300 CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn PDF

    BFS67

    Abstract: 310M ft06 HSC5458 200S A190 A192 A193 A390 T072
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N P N 1 10. SILICON PNP 11. SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE M A X . RATIINGS Ä 2 5 C II MIN. M A X Pc T 6 T T IDERATE FREE I'A E I Ic


    OCR Scan     		NPN110. NPC214N NPC215N NPC216N SI212N BFS67 310M ft06 HSC5458 200S A190 A192 A193 A390 T072 PDF

    kk3819

    Abstract: kk4223
    Text: T -3 5 -2 5 ' sod Ô3bflbü2 DÜDBbflD S4T 4ÖE D SOLITRON DEVICES INC A T M , © L O W P O W E R FIELD E F F E C T T R A N S I S T O R S m m /M L •BVDgo o: BVgss Case Min Type Style Numbei T O - I Geometi ? (V 18 FN22.2 50 2N3066 2N3067 18 FN22.2


    OCR Scan     		2N3066 2N3067 2N3068 2N3069 2N3070 2N3071 2N3085 2N3087 2N3089 2N3089A kk3819 kk4223 PDF

    2N3824

    Abstract: 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392
    Text: LOW P O W E R FIELD EFFE C T T R A N S IS T O R S IF if: Type Number Case Style T O - Geometry •BVDgo or BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off) Min Max (V) _ Idss Max Min (mA) Igss or •Idgo Max (nA) R(on) Max (ohms) T(on) Max (nS) T(off)


    OCR Scan     		2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4448 2N5432 2N4391 2N4392 PDF

    2n5103

    Abstract: No abstract text available
    Text: Ä T T Ä [L LOW PO W ER FIELD E FFEC T T R A N S IS T O R S Type Number Case Style (TO— Geometr r •BVDgo oi BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off) Min Max (V) lgss Max (nA) Yls Min Max (uMhos) Idss Min Max (mA) 9.5 4.5 2.2 9.5 4.5


    OCR Scan     		UC758 UC759 2n5103 PDF

    310M

    Abstract: CM601 02N 60P ft06 HSC5458 200S A190 A192 A193 A390
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		NPN110. NPC214N NPC215N NPC216N SI212N 310M CM601 02N 60P ft06 HSC5458 200S A190 A192 A193 A390 PDF