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    BVEB Price and Stock

    Winbond Electronics Corp W25Q128BVEBG

    IC FLASH 128MBIT SPI/QUAD 8WSON
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    DigiKey W25Q128BVEBG Tube
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    White-Rodgers BVE/BVS-LOCKING-SEAL-CAP-S

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    White-Rodgers BVE/BVS-LOCKING-SEAL-CAP-M

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    White-Rodgers BVE/BVS-LOCKING-SEAL-CAP-L

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    Sharp Microelectronics of the Americas LH28F800BVE-BTL90

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    Bristol Electronics LH28F800BVE-BTL90 20
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    BVEB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BVEB24TZ-WPC YellowStone REFLECTOR COATING TYPE HIGH-PERFORMANCE LEDS Original PDF

    BVEB Datasheets Context Search

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    H11G1 datasheet

    Abstract: H11G1 H11G3 H11G2 Photodarlington
    Text: Optoelectronics Products High Voltage Photodarlington Output with integral base-emitter resistor ; DC Sensing Input Part Number CTR @10 mA IF (%) Min BVCEO(V) BVCBO(V) BVEBO(V) tON/tOFF(µs) Max Min Min Min Max VISOACRMS (kV)1 minute 6-Pin Package H11G1 1000


    Original     		PDF H11G1 H11G2 H11G3 H11G1 datasheet H11G1 H11G3 H11G2 Photodarlington

    switch NPN

    Abstract: BSY18 2N2369 2n4390
    Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV


    Original     		PDF 2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A switch NPN BSY18 2N2369 2n4390

    SM58B

    Abstract: transistor 0190 8178 LE17
    Text: SILICON NPN TRANSISTOR SM58B • Advanced Distributed Base Technology • Designed For Use In Electronic Ballast Applications • Efficient Power Switching ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated BVCBO BVCEO BVEBO IC ICM IB PD TJ Tstg


    Original     		PDF SM58B O-220 SM58B transistor 0190 8178 LE17

    Untitled

    Abstract: No abstract text available
    Text: FMMT491 Medium power NPN transistor in SOT23 Summary BVCEO > 60V BVEBO > 7V IC cont = 1A PD = 500mW RCE(sat) = 160m⍀ at 1A Complementary part number : FMMT591 Description C Medium power planar NPN bipolar transistor. Features • VCE(sat) maximum specification improvement


    Original     		PDF FMMT491 500mW FMMT591 FMMT491TA D-81541

    ZXTN5551

    Abstract: sot223 marking 840
    Text: A Product Line of Diodes Incorporated ZXTN5551G 160V NPN VOLTAGE TRANSISTOR Features • • • • • • • • Mechanical Data BVCEO > 160V BVEBO > 6V IC = 600mA Continuous Collector Current Low Saturation Voltage 150mV max @10mA hFE specified up to 50mA for a high gain hold up


    Original     		PDF ZXTN5551G 600mA 150mV AEC-Q101 OT223 J-STD-020 MIL-STDF-202 DS33671 ZXTN5551 sot223 marking 840

    transistor 13003L

    Abstract: APT13003LZ
    Text: A Product Line of Diodes Incorporated Green APT13003L 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 450V   BVCES > 700V   BVEBO > 9V  IC = 0.8A high Continuous Collector Current  Lead-Free Finish; RoHS Compliant Notes 1 & 2


    Original     		PDF APT13003L MIL-STD-202, 200mg DS36306 transistor 13003L APT13003LZ

    GU13005S

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green APT13005S 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 450V   BVCES > 700V   BVEBO > 9V  IC = 3.2A high Continuous Collector Current  Lead-Free Finish; RoHS Compliant Notes 1 & 2


    Original     		PDF APT13005S O220F-3 MIL-STD-202, 400mg 340mg O220F-3: 1500mg DS36309 GU13005S

    2N1015

    Abstract: 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B
    Text: POWER TRANSISTORS *•* PT TYPE NO. TO-82 m MAXIMUM RATINGS 25*C BVcbo BVctt» BVebo le V V V A Watts hft MIN MÀX le A * Va V _ Sat Test Voltages Conditions le fa I ebo Va V« V A ma V A 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5


    OCR Scan     		PDF 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B

    2N424

    Abstract: 2N1722 2N389 to-53 2N389A 2N5067 2N5068 2N5630 2N5631 2N5632
    Text: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2


    OCR Scan     		PDF 2N5067 2N5068 N5069 N5629 2N5630 2N5631 2N5632 2N5633 2N5634 TWX-510-224-6582 2N424 2N1722 2N389 to-53 2N389A

    Untitled

    Abstract: No abstract text available
    Text: 2N 4123 NPN SILICO N IV IIC R O PLANAR EPITAX IA L bvebo C o lle cto r C utoff C urrent JCB0 Em itter Cutoff Current ^EBO Base-Em itter S aturation Voltage DC Current Gain SYMBOL BVCB0 bvceo MICRO FI F P T P O N ir^ I TH l\ V / lllV < 0 1 .1 V . MIN 40 30


    OCR Scan     		PDF O-92A 2N4123 2N4124

    NTE37

    Abstract: NTE43 NTE50 NTE175 NTE36 NTE42 NTE45 T0126 T066 NTE55
    Text: BI-POL AR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) •c BVCBo BVCeo BVEbo »FE Pd «T 12 160 140 6 100 100 15 2 400 350 6 50 35 20 7a 0.5 300 300 3 92 20 SIP-5 8a 0.05 100 100 5 400 Min 0.2/Unit 0.4 Total 100


    OCR Scan     		PDF NTE36 59alt NTE36) 37MCP NTE36 NTE37 NTE175) T0126tchmode NTE55) T0220 NTE37 NTE43 NTE50 NTE175 NTE42 NTE45 T0126 T066 NTE55

    Untitled

    Abstract: No abstract text available
    Text: POWER DARLINGTONS TYPE NO. PT MAXIMUM RATINGS @ 25'C BV cbo B V ceo BVebo Ic V V Watts V A Ic VCE A V Sat Test Voltages Conditions VCE Ib V be Ic I ebo V V A A ma hFE MIN MAX 2N2226 150 50 50 15 10 250 2000 4 6 3.5 4 9 .15 30 2N2227 150 100 100 15 10 250 2000 4


    OCR Scan     		PDF 2N2226 2N2227 2N2228 2N2229 2N2230 2N2231 2N3477 0Q43SC TWX-510-224-6582 O-114

    ECG189

    Abstract: ECG181 ECG162 ECG164 ECG186A ECG179 # Frequency at which common emitter current gain is 70.0 of low frequency gain ECG180 ECG172A ECG188
    Text: Transistors cont'd E C G Type D escrip tio n and A pplicatio n (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To B a se V o lts Collector To Em itter V olts B a se to Em itter V o lts b v CBO b v CEO bvebo M ax. D e v ice D iss. P p W atts


    OCR Scan     		PDF ECG162 ECG163A ECG164 ECG165 ECG171 BC6296) O-202 ECG172A O-92HS ECG192A ECG189 ECG181 ECG186A ECG179 # Frequency at which common emitter current gain is 70.0 of low frequency gain ECG180 ECG188

    C9853

    Abstract: No abstract text available
    Text: I\NE5 C9853 ^1 P ^NEW ENGLAND SEM ICONDUCTOR LOW LEVEL SWITCHING SILICON EPITAXIAL JUNCTION PNP TRANSISTORS • LOW (EC (sat • HIGH BVebo • ULTRA LOW LEAKAGE • LOW C* ELECTRICAL DATA ABSOLUTE MAXIMUM RATINGS MMMCTM SYMBOL UNITS C9S53 Collector To Emitter Voliate


    OCR Scan     		PDF C9853 C9853 lg-200 20QMA M46-1158

    germanium transistor ac 128

    Abstract: germanium transistors NPN AC128 germanium af transistors germanium transistors pnp germanium npn pnp germanium transistor AC 128
    Text: High Dissipation Germanium Transistors PIMP and NPN A F Alloy Transistors in T 0 1 metal case Type BVceo bvebo V V V 1CM A w °c hF E ^ v C B / ld V/ma f T ^VC E /'c1 MHz (V /m A I uA (V) — 16 32 32 10 10 1.0 1.0 0.22 0.22 90 90 60 . 175 (0/300) 6 0 . 175 (0/300)


    OCR Scan     		PDF

    PN5133

    Abstract: No abstract text available
    Text: DtVICE TYPE PA C KAG E BVCEO BVCBO BVEBO ICBO @ VCB IVI M I N {VI M I N IVI M I N 1-.A MA X IVI HFE VC & 1C MIN MAX | V1 COB FT l|.IIM A * iM H /| 150 150 4 2 50 15 15 16 3 5 10 250 250 300 150 200 l*tA l PN4962 PN4963 PN5126 P N 5 I2 7 PN5128 N PN NPN


    OCR Scan     		PDF PN4962 PN4963 PN5126 PN5128 PN5131 PN5132 PN5133 O-237 PN5133

    2n3547

    Abstract: 2N3549
    Text: Small Signal Transistors TO-18 Case Continued TYPE NO. 2N2896 2N2897 DESCRIPTION (V) (V) (V) (l*A) MIN MIN MIN MAX *ICES "IC E V e ic h FE BVCBO BVCEO BVEBO •CBO « VCBO (mA) (V) MIN VCE V C E (S i iT) IC Cob (V) (V) (mA) MAX MAX (pF) MAX n- NF ton


    OCR Scan     		PDF 2N2896 2N2897 2N2906A 2N2907A 2N2952 2N3009 2N3011 2N3012 2N3013 2N3014 2n3547 2N3549

    1ff TRANSISTOR SMD MARKING CODE

    Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
    Text: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369


    OCR Scan     		PDF DDDQS11 OT-23 350mW CMPT918 CMPT2222A CMPT2369 CMPT2484 CMPT2907A CMPT3640 CMPT3904 1ff TRANSISTOR SMD MARKING CODE smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p

    PN2897

    Abstract: PN2857
    Text: DEVICE TYPE PACKAGE BVCEO BVCBO BVEBO CBO @ VCB IV I M IN I V M IN (V I M IN f« n A ) MAX IV ) HFE @ VC & 1C M IN MA* IV i i * "A i FT COB i |. n m a • lM H ; i PN2353 PN2368 PN2369 PN2369A PN2405 NPN TO-92 (721 NPN TO-92 (72) NPN TO-92 ( 72) NPN TO-92 (72)


    OCR Scan     		PDF PN2353 PN2368 PN2369 PN2369A PN2405 PN2475 PN2476 PN2477 PN2481 PN2483 PN2897 PN2857

    diode t48

    Abstract: ECG2302 ECG2305 t48 diode ECG488 ECG2300 ECG2310 ECG481 ECG2312 ECG2307
    Text: Transistors cont'd Collector To Base Volts BVceo Description and Application ECG Type ECG478 ¡ 1 ECG479 (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Emitter Volts bvceo Base to Emitter Volts BVeb O Max. Collector Current Ig Amps Max.


    OCR Scan     		PDF ECG478 RF-50F6 ECG479 ECG480 ECG481 RF-38F6B ECG482 RF-23F6E ECG483 diode t48 ECG2302 ECG2305 t48 diode ECG488 ECG2300 ECG2310 ECG2312 ECG2307

    2N4425

    Abstract: GES6220-J1 2N3404 2N3405 GES6220 HS5306
    Text: Sm all signal Transistors TO-92HS Case PD @ TC =25°C =1 0Watt TYPE NO. 2N3402 POLARITY BVc b o BVc e O NPN bveb0 >CBO v CBO <V) (V) (V) <nA) MIN MIN MIN MAX 25 25 5.0 100 hl•E 00 MIN o lC e v CE <mA) (V) MAX NF VCE(SA T ) « ' C c ob <mA) m (MHz) (dB)


    OCR Scan     		PDF O-92HS 2n3402 2n3403 2n3404 2n3405 2n4425 hs3402 hs3403 ges6015-j1 ges6016-j1 GES6220-J1 GES6220 HS5306

    2N1620

    Abstract: 2N1211 N5069 2N1886 2N2032 2N5631 JANTX 2N389 2N389A 2N5067 2N5068
    Text: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2


    OCR Scan     		PDF 2N5067 2N5068 N5069 N5629 2N5630 2N5631 2N5632 2N5633 2N5634 TWX-510-224-6582 2N1620 2N1211 2N1886 2N2032 2N5631 JANTX 2N389 2N389A

    Untitled

    Abstract: No abstract text available
    Text: r le = 5.0 AMPS CONTINUED DATA P D@ 100°C <§> BVeb0 VOLTS JZ DEVICE VcE VcE sat @ lc SHEET 5.0 0.75 4.5 4.5 0.5 0.075 0.8 0.8 15 15 4.0 4.0 1.0 1.0 1.0 2.5 2.5 2.5 0.25 0.25 0.25 4.0 4.0 4.0 5.0 5.0 5.0 10.0 1.5 1.5 0.6 0.9 5.0 5.0 5.0 5.0 0.5 0.5 0.5 0.5


    OCR Scan     		PDF 2N4150 2N4240 2N4395 2N4396 2N4913 2N4914 2N4915 2N5152 2N5154 2N5237

    Untitled

    Abstract: No abstract text available
    Text: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BVEbo


    OCR Scan     		PDF NTE248) NTE247) NTE250) NTE275) NTE244) NTE243) NTE246) NTE245) D003SSD