L1110
Abstract: GPIO Interface card LQFP-144 SA1100 SA-1110 Si9712 PNOE NPCE LinkUp Systems Corporation
Text: TM L1110 PC Card/Compact Flash Interface to StrongARM SA-1100 and SA-1110 CPUs FEATURES Single Slot PC Card/Compact Flash interface software configurable Glue-less interface to SA-1100 / 1110 Support of both 3V and 5V cards Single PC Card interface
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L1110
SA-1100
SA-1110
L1110
SA1100
nIOIS16
GPIO Interface card
LQFP-144
Si9712
PNOE
NPCE
LinkUp Systems Corporation
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82551ER
Abstract: 82551IT 82551QM GD82551QM ICL Logic 82559 applications notes
Text: 82551QM Fast Ethernet Multifunction PCI/CardBus Controller Networking Silicon - 82551QM Datasheet Product Features • ■ ■ ■ Enhanced IP Protocol Support — TCP, UDP, IPv4 Checksum Offload — Received Checksum Verification Quality of Service QoS
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82551QM
82551QM
10BASE-T
100BASE-TX
32-bit
15mm2
82551ER
82551IT
GD82551QM
ICL Logic
82559 applications notes
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R4000SC
Abstract: 82C206 chipset 82c206
Text: Support Components Mentor ARC, Inc. WINset-VL R4x00 WINset-PCI R4x00 Mentor ARC Standard Features ❏ Wide range CPU support R4000SC/ PC, R4600 and R4400SC/PC ❏ VESA/PCI specification fullyCompatible ❏ High integration and high performance ❏ Separate VL/PCI and CPU bus to
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R4x00
R4000SC/
R4600
R4400SC/PC
64-bit
R4x00
64C257
R4000SC
82C206
chipset 82c206
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Untitled
Abstract: No abstract text available
Text: 82551QM Fast Ethernet Multifunction PCI/CardBus Controller Networking Silicon - 82551QM Datasheet Product Features • ■ ■ ■ Enhanced IP Protocol Support — TCP, UDP, IPv4 Checksum Offload — Received Checksum Verification Quality of Service QoS
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82551QM
82551QM
10BASE-T
100BASE-TX
32-bit
15mm2
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r4200
Abstract: pc power sup R4000SC chipset 82c206 82C206 cache controller 64C22 R4X00 md127
Text: Support Components WINset-VL R4x00 WINset-PCI R4x00 Mentor ARC, Inc. Mentor ARC Standard Features ❏ Wide range CPU support R4000SC/ PC, R4600 and R4400SC/PC ❏ VESA/PCI specification fullyCompatible ❏ High integration and high performance ❏ Separate VL/PCI and CPU bus to
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R4x00
R4000SC/
R4600
R4400SC/PC
64-bit
R4x00
64C257
r4200
pc power sup
R4000SC
chipset 82c206
82C206
cache controller
64C22
md127
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VQ1000
Abstract: No abstract text available
Text: V Q 10 00 O i S u p e r t e ffic . x N-Channe! Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Standard Commercial Devices Order Number / Package BVd ss/ R DS ON BV tcs (max) (min) 14-Pin P-DIP 14-Pin C-DIP* 60V 5 .5 ÌÌ 0.5A VQ1000N6
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14-Pin
VQ1000N6
VQ1000N7
VQ1000
VQ1000
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transistor C624
Abstract: T120TA 2N2457 B3 ho transistor C621 RT1111 2N1468 CK277 KVT 50/102n 3500 2SC502
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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THP172
TIS11
TIX690
Pc-50mW;
BVCBO-50V
BVGSS-30V
Yfs-800umhos
500mW;
TIX881
TIX882
transistor C624
T120TA
2N2457
B3 ho transistor
C621
RT1111
2N1468
CK277
KVT 50/102n 3500
2SC502
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2SK19Y
Abstract: C682 2SK19GR X70a FSP400 40468 C621 K1202 C682A C684
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
THP172
TIS11
TIX690
Pc-50mW;
BVCBO-50V
BVGSS-30V
Yfs-800umhos
500mW;
TIX881
2SK19Y
C682
2SK19GR
X70a
FSP400
40468
C621
K1202
C682A
C684
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FE252
Abstract: 2N2886 FZJ 131 fzj 165 TIX882 2N2180 2N5425 2SC111 2SC114 transistor BF140
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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GM300
Abstract: CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn
Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C
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NPN110.
THP172
TIS11
TIX690
Pc-50mW;
BVCBO-50V
BVGSS-30V
Yfs-800umhos
500mW;
TIX881
GM300
CM602
ft06
transistor C633
FSP400
2n1763
C621
DA402
2N2458
transistor c640 npn
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IXTH26N50
Abstract: IXTH26N45 ixtm26n50 TL 1074 CT
Text: I X Y S IDE CORP 1 ° Mbflb52b 000D350 3 I -' □ IX Y S MegaNIOS FETs IXTH26N50, 45 IXTM26N50, 45 MAXIMUM RATINGS Parameter Sym. IXTH26N45 IXTM26N45 IXTH26N50 IXTM26N50 Unit Drain-Source Voltage 1 Vdss 450 500 Vdc V dgr 450
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IXTH26N45
IXTH26N50
IXTM26N45
IXTM26N50
Mbflb22b
IXTH26N50,
00ESN0TINCLUOE
TL 1074 CT
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Untitled
Abstract: No abstract text available
Text: International US Rectifier Provisional Data Sheet No. FD 9.1273A IRHY7230CM IRHY8230CM HEXFET TRANSISTOR N-CHANNEL JAN5R2N7381 JANSH2N7381 R E F : M IL - S - 1 9 5 0 0 / 6 1 4 M EGA RAD HARD 200Volt, 0.4QQ, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFETs
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IRHY7230CM
IRHY8230CM
JAN5R2N7381
JANSH2N7381
200Volt,
1X105
1X106
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Untitled
Abstract: No abstract text available
Text: TOR IRFE Series Devices IRFE Series Data Sheet The IRFE Data Sheet describes 19 devices, 12 N-Channel and 7 P-Channel, all contained in the LCC package. This data sheet is arranged to show common tabular and graphical information between devices. alphabetical order. W here the information is device
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IRFE9210
IRFE9220
IRFE9230
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ID 48 Megamos
Abstract: 35N25 IXTM35N25 ixtm35n30
Text: I X Y S CORP IDE D I 4t . fl b25 L. ÜDDOBbO QDOGBtiO b | 4t.flt.S5t DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous
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IXTH35N25
IXTM35N25
IXTH35N30
IXTM35N30
O-204
O-247
IXTH350
ID 48 Megamos
35N25
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 20 0 V olt V DS * R DS on = 32i2 ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BO L Drain-Source Voltage V DS -200 V Continuous Drain Current at Tamb=25°C b -110
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0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK3444 TOSHIBA Field Effect Transistor te n ta tiv e ] Silicon N Channel MOS Type ti-M OSV 2S K3444 High Speed, High Current Switching Applications Switching Regulator, DC-DC Converter Applications Industrial Applications Unit in mm Motor Drive Applications
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2SK3444
K3444
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Untitled
Abstract: No abstract text available
Text: Hormis S RFD16N06, RFD16N06SM Semiconductor y 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET September 1998 Features Description • 16A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives opti
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RFD16N06,
RFD16N06SM
1e-10
1e-30
07e-3
19e-7)
45e-3
66e-5)
25e-3
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Untitled
Abstract: No abstract text available
Text: IRFAC40, IRFAC42 HARRIS S E M I C O N D U C T O R 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 • 6 .2 A and 5.4A , 60 0V Description • r D S O N = 1 These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRFAC40,
IRFAC42
RFAC40,
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Untitled
Abstract: No abstract text available
Text: ADVANCED INTERCONNECTIONS Single In-line Solid Socket Strips Tel. 4 0 1-82 3 -5 2 00 o 5 Energy Way, P.O. Box 1019, W est W arw ick, Rl 02893 • FAX 401 -823-8723 Single In-Line Solid Socket Strips Socket Strip -01 Terminal Shown •1QQTYP. A = Pilch .100" 2.54m m x num ber of terminals.
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Untitled
Abstract: No abstract text available
Text: RFD16N05, RFD16N05SM S e m iconductor Data Sheet 16A, 50 V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,
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RFD16N05,
RFD16N05SM
RFD16N05
RFD16N05SM
TA09771.
047i2
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17N55
Abstract: MOSFET 17N60 17N60 IXTM17N55 IXTH17N60
Text: IDE I X Y S CORP D I 4t>ôt>22t, 0 0 00 3M b I r - 5 ? - / r MegaMOS'“ FETs n ix Y S IXTH17N60, 55 IXTM17N60, 55 MAXIMUM RATINGS Sym. IXTH17N55 IXTM17N55 IXTH17N60 IXTM17N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rg s = 1-OMfl) (1)
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IXTH17N55
IXTM17N55
IXTH17N60
IXTM17N60
O-204
O-247
IXTH17N60,
IXTM17N60,
17N55
MOSFET 17N60
17N60
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35N25
Abstract: ixtm35n30 35N30 800v mosfet megamos 46 08 09 6 IXTH35N25
Text: I X Y S CORP ID E D I 4t.fl b25L. ÜDDOBbO QDOGBtiO b 4t.flt.S5t b | DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous
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IXTH35N25
IXTH35N30
IXTM35N25
IXTM35N30
35N25
35N30
800v mosfet
megamos 46 08 09 6
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19n50
Abstract: megamos 48 a 1712 mosfet lhi 778 megamos N-channel MOSFET 800v to-247 IXTM19N50 LHi 978 megamos 13 H100
Text: I X Y S CORP 10E ° 4Liflt.2ab 000035b M 1 I - 3 7 '/ S MegaMOS FETs D IX Y S IXTH19N50, 45 IXTM19N50, 45 M AXIM UM RATINGS Parameter Sym. IXTH19N45 IXTM19N45 IXTH19N50 IXTM19N50 Unit Drain-Source Voltage 1 Vd s s 450 500 Vdc Vdgr 450 500 Vdc Drain-Gate Voltage (Rq s - 1-OMft) (1)
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IXTH19N45
IXTH19N50
IXTM19N45
IXTM19N50
000035b
19n50
megamos 48
a 1712 mosfet
lhi 778
megamos
N-channel MOSFET 800v to-247
LHi 978
megamos 13
H100
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Untitled
Abstract: No abstract text available
Text: RF1K49088 HARRIS S E M I C O N D U C T O R 3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Description Features 3.5A, 30V The RF1K49088 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This
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RF1K49088
RF1K49088
42e-9
1e-30
02e-3
98e-6)
50e-3
70e-6)
53e-3
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