MJE494
Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS
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BD157
BD158
BD159
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
MJE494
2SC1419
BD 804
2SD675
MJE104
BD581
BD135 CURVES
MJ1000
DTS-4041
2N5037
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2N3055 plastic
Abstract: BUT11Af equivalent BU108 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 bdx54d BDX54 BUX98A 2SC140 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art
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BUT11AF
BUT11AF
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N3055 plastic
BUT11Af equivalent
BU108
NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247
bdx54d
BDX54
BUX98A
2SC140
BU326
BU100
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2N3716 MOTOROLA
Abstract: BU108 2SA1046 bd139 application note BUY69A BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3715 2N3716 Silicon NPN Power Transistors . . . designed for medium–speed switching and amplifier applications. These devices feature: • • • • • Total Switching Time at 3 A typically 1.15 µs Gain Ranges Specified at 1 A and 3 A
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2N3791
2N3715
2N3716
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
2N3716 MOTOROLA
BU108
2SA1046
bd139 application note
BUY69A
BU326
BU100
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mje15033 replacement
Abstract: BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 – 200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.
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MJE341
MJE344
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
mje15033 replacement
BU108
TIP41B
MJE2482
x 0602 ma
2SC1419
BU326
BU100
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2N5657 equivalent
Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.
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2N5655
2N5656
2N5657
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
2N5657 equivalent
2SA1046
BU326
BU108
BU100
2SC2331 Y
tip47 419
2N3792 application notes
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2SD669 equivalent
Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc
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2N6609
2N3773)
2N6667
2N6668
220AB
2N6387,
2N6388
2SD669 equivalent
BD801
BDY29 equivalent
BU108
2SC2080
2SD436
2N6021
BD345
tip122 D-PAK package
2SD544
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2SC495
Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink
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MJF6107
2N6107
E69369,
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
2SC495
NSP41A
BU108
transistor BD614 MOTOROLA
2SA663
BD4122
BD661
MJ1000
NSP2100
D45VH4 similar
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mje521 equivalent
Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry
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MJE521
MJE371
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
mje521 equivalent
BU108
2N3055 plastic
2N6488 MOTOROLA
Motorola transistors MJE3055 TO 127
3904 Transistor
BDX54
tip122 tip127 audio amp
BU326
BU100
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2N3055
Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes
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MJE2955T
MJE3055T
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N3055
BU108
AN415A
MJE2955T ST
BDX54
2n3055 audio amplifier application note
BU326
BU100
mje13005
BDV64
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2N5631 equivalent
Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —
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2N5630,
2N6030
2N5631,
2N6031
2N5630
2N5631
2N5631 equivalent
2N5630 "cross-reference"
Chomerics
BU108
2SA1046
tip122 tip127 audio amp
BU326
BU100
2sd313 equivalent
NPN/TIP42C as regulator
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BD179-10 equivalent
Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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BD179
BD180
BD179-10
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
BD179-10 equivalent
BU108
2SA1046
2SC7
BDX54
BUX98A
BU326
BU100
bul1
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sec tip41c
Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A* Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power
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MJL3281A
MJL1302A
MJL3281A*
MJL1302A*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
sec tip41c
MJE493
2SC1419
2sc3281
2n3055 audio output circuit
BDW93
MJ1000
BDW83
buv98a cross reference
2SC1943
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TRANSISTOR BC 384
Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required
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TIP47
E69369,
MJF47
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TRANSISTOR BC 384
BU108
bd139 equivalent transistor
2N3055 equivalent
RCA1C03
transistor Bc 574
BU326
BU100
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MJ11017 equivalent
Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types
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MJ11018,
MJ11022,
MJ11017
MJ11021*
MJ11018*
MJ11022
TIP73B
TIP74
TIP74A
TIP74B
MJ11017 equivalent
BU108
MJ11021
BU326
BU100
MJE3055T
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BUX13
Abstract: No abstract text available
Text: _ f Z 7 • 7^537 oosaqsq g _ S G S - T H O M S O N ^ 7 # BUX13 S:_G.S.-THOMSON 30E » HIGH VOLTAGE POWER SWITCH DESCRIPTION The BUX13 is a silicon multiepitaxiai mesa NPN transistor in Jedec TO-3 metal case, intended for high voltage, fast switching applications.
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BUX13
BUX13
300ns,
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BUX13
Abstract: bux13 ra
Text: rz 7 SGS-THOMSON ^7 # g IL ^ O T « S BUX 13 HIGH VOLTAGE POWER SWITCH DESCRIPTIO N The BUX13 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case, intended for high voltage, fast switching applications. TO-3 ABSOLUTE M AXIM UM RATING S
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BUX13
300ns,
bux13 ra
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sem 2106
Abstract: bux13
Text: I MOTORGLA SC X S T R S /R 12E D F I k 3 b7 2 S4 0 0 0 4 =52*1 3 | MOTOROLA SEM ICO N DUCTO R BUX13 TECHNICAL DATA 15 AMPERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high speed, high voltage, high power applications.
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BUX13
AN415A)
sem 2106
bux13
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Untitled
Abstract: No abstract text available
Text: CRIMSON SEM ICO ND UC TO R INC TT ^2514096 CRIMSON SEMIC O N D U C T O R INC J 99D 00339 D dF | ESmOTb . . I P Cf h ~ 0 / M U LTIEPITAXIAL H.V. M E S A AND B IP L A N A R '- TO-3 continued V«o Vcio (V) (V) NPN BUW44 BUW45 BUW46 BUX13 BUX14 BUX43 BUX44 BUX46
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BUW44
BUW45
BUW46
BUX13
BUX14
BUX43
BUX44
BUX46
BUX47
BUX48
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BDV56
Abstract: BDV57 2N3055 TIPL777 BUS11A cv9936 BUX11 2N6033
Text: un itti IMI Semelab Mil / Aerospace Division CECC 5 0 0 0 0 QUALIFIED PRODUCT SEM ELAB has one of the largest ranges of C E C C approved power products in Europe. These products have undergone approval to support both new application requirem ents and also existing and “old”
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2N2218
2N2218A
2N2219
2N2219A
2N2913
2N2914
2N2915
2N2916
2N2917
2N2918
BDV56
BDV57
2N3055
TIPL777
BUS11A
cv9936
BUX11
2N6033
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811600
Abstract: BDX10 2N3055C BUW46 2N3055H BUX80 BUW44 BUW45 BUX13 BUX14
Text: C R I MS O N S E MI CONDUC TOR I N C TT t-_ . _ ~ -— -— - -2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R IN C I 99D 00339 O D lf| E S I M Q U v 7" 6t>-Q/ M U L T IE P IT A X IA L H.V. M E S A A N D B IP L A N A R '- T O -3 continued
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BUW44
BUW45
BUW46
BUX13
BUX14
BUX43
BUX44
BUX46
BUX47
BUX48
811600
BDX10
2N3055C
2N3055H
BUX80
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Untitled
Abstract: No abstract text available
Text: lc / V „ A/V Ml8 vV et ’ I c 'l . m a t <V) (A /m A ) P . <W) If et M U L T I E P I T A X IA L H V. M E S A A N D B I P L A N A R '- T O -3 (co n tin u e d » 500 400 15 800 400 15 900 450 15 175 6 7 6 /1 .5 3.0 10/20 00 175 7/1.5 1.5 10/20 00 175 7
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BUX13
BUX14
BUX43
BUX44
BUX46
BUX47
BUX48
BUX80
BUX82
BUX97
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BDX334
Abstract: bdy37a BD645 BD647 BD649 BD795 BD796 BD797 BD798 BD799
Text: 0 2 5 8 3 5 4 A0VANCED SEMICONDUCTOR SILICON - T B 3 ADVANCED P d @ To=25°C DEVICE TYPE NO. BD645 BD647 BD649 BD795 BD796 BD797 BD798 BD799 ËD800 BD801 BD802 BD895 ËD895A BD897 BD897A BD899 BD899A BD901 BDX10 BDX13 &DX33 BDX33A
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DB5a35M
0QDD053
BD645
BD647
BD649
BD795
T0220
T0220
BDX334
bdy37a
BD796
BD797
BD798
BD799
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B0411
Abstract: B0733 THD200F1 dk52 2SC4977 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSOH SGS-THOMSON PAGE REPLACEMENT NEAREST PREFERRED KDUSTHY STANDARD 2N3016 2N5339 93 2N3772 2N3021 BDW52C 169 2N3789 2N3022 BDW52C BDW52C BDW52C 169 169 169 2N3790 2N3791 2N3792 BDW52C BDW52C 169 169 77 2N3863 2N3864
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
B0411
B0733
THD200F1
dk52
2SC4977
2N5415 REPLACEMENT
TIP 2n3055
BD68D
SGS-Thomson cross reference
BUX37 THOMSON
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MJE520
Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
Text: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic
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-204AA
-204AE
T0-204A
97A-02
O-205AD
BUS51
BUV21
BUV11
2N6249
BUX41
MJE520
bd189
sc 6038
MJE12007
MOTOROLA 527 33A
mj4647
mje13006
BD 433NPNTO-126
Je105
mps-u
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