BDX33C
Abstract: No abstract text available
Text: BDX33B, BDX33C NPN BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc
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BDX33B,
BDX33C
BDX34B,
BDX34C
BDX334B
BDX33C,
BDX334C
33C/34B,
BDX33C
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BDX33CG
Abstract: BDX33BG BDX334 BDX33C Box 34C BDX334B BDX34CG BDX33B BDX34B BDX34C
Text: BDX33B, BDX33C* NPN BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features •ăHigh DC Current Gain - hFE = 2500 (typ.) at IC = 4.0
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Original
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BDX33B,
BDX33C*
BDX34B,
BDX34C*
BDX33C
BDX34C
BDX334B
BDX33C,
BDX334C
BDX33CG
BDX33BG
BDX334
Box 34C
BDX334B
BDX34CG
BDX33B
BDX34B
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33c marking
Abstract: BDX33BG box 34b BDX334B BDX33CG BDX334
Text: BDX33B, BDX33C NPN BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc
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Original
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PDF
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BDX33B,
BDX33C
BDX34B,
BDX34C
BDX334B
BDX33C,
BDX334C
33C/34B,
33c marking
BDX33BG
box 34b
BDX334B
BDX33CG
BDX334
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BDX34C
Abstract: 10 amp pnp darlington power transistors BDX33CG BDX33C BDX34CG BDX33B BDX34B marking 33c diode
Text: BDX33B, BDX33C* NPN BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0
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Original
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PDF
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BDX33B,
BDX33C*
BDX34B,
BDX34C*
BDX33C
BDX34C
BDX334B
BDX33C,
BDX334C
10 amp pnp darlington power transistors
BDX33CG
BDX34CG
BDX33B
BDX34B
marking 33c diode
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BDX334
Abstract: bdy37a BD645 BD647 BD649 BD795 BD796 BD797 BD798 BD799
Text: 0 2 5 8 3 5 4 A0VANCED SEMICONDUCTOR SILICON - T B 3 ADVANCED P d @ To=25°C DEVICE TYPE NO. BD645 BD647 BD649 BD795 BD796 BD797 BD798 BD799 ËD800 BD801 BD802 BD895 ËD895A BD897 BD897A BD899 BD899A BD901 BDX10 BDX13 &DX33 BDX33A
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OCR Scan
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PDF
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DB5a35M
0QDD053
BD645
BD647
BD649
BD795
T0220
T0220
BDX334
bdy37a
BD796
BD797
BD798
BD799
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