MIL-STD-750 METHOD 2036
Abstract: 5082-2817 HSMS-28XX diode hp 5082-2817 hp2817
Text: Schottky Barrier Diodes for Mixers and Detectors Technical Data 5082-2817/18 Features • Low Noise Figure • High Burnout Rating 1 W RF Pulse Power Absorbed • Rugged Design • High Sensitivity Outline 15 0.41 .016 0.36 (.014) 25.4 (1.00) MIN. tension for 30 minutes). The
|
Original
|
PDF
|
HSMS-28XX
5965-8845E
MIL-STD-750 METHOD 2036
5082-2817
diode hp 5082-2817
hp2817
|
ASW204
Abstract: No abstract text available
Text: Application Note Maximum Input Power Analysis of ASB’s MMIC Amplifiers Maximum Input Power Analysis of MMIC Amplifiers 1. Introduction In many applications, amplifiers may be subjected to an unexpected abnormal operation by a various RF environment so that the amplifier can’t work properly in a system. We made a test to provide a
|
Original
|
PDF
|
ASX520
ASX620
ASX423
ASL13W
ASX521
ASX621
AST20S
ASW204
|
MMIC limiter
Abstract: RF limiter PIN diode pin diode limiter tr limiter LML221 Mott diode
Text: 2-20 GHz MMIC Limiter Filtronic LML221 Solid State Features • • • • • • • • • • 0.5 dB Insertion Loss +15 dBm Leakage Power 4-6 Watts Burn-Out Power Typical -15 dB Input/Output Return Loss Typical 2-20GHz Frequency Bandwidth 40 nS Pulse Recovery Time
|
Original
|
PDF
|
LML221
2-20GHz
MMIC limiter
RF limiter PIN diode
pin diode limiter
tr limiter
LML221
Mott diode
|
Untitled
Abstract: No abstract text available
Text: Application Note 1677 Authors: Oscar Mansilla, Richard Hood, Lawrence Pearce, Eric Thomson and Nick Vanvonno Single Event Effects Testing of the ISL70218SRH, Dual 36V Rad Hard Low Power Operation Amplifiers Introduction SEE Test Objective The intense heavy ion environment encountered in space
|
Original
|
PDF
|
ISL70218SRH,
300mV
AN1677
|
RA60H4047M1
Abstract: RA60H4452M1
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-078-B Date : 26th Sep. 2006 Rev. date : 22th Jun. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Electro Static Sensitivity for RA60H4452M1 and RA60H4047M1
|
Original
|
PDF
|
AN-UHF-078-B
RA60H4452M1
RA60H4047M1
RA60H4047M1
RA60H4047M1.
|
RA60H4047M1
Abstract: ra60h4047m1 application note RA60H4452M1 AN-UHF-078-A RA60H4047M ra60h4047
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-078-A Date : 26th Sep. 2006 Rev. date : 7th Jan. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Electro Static Sensitivity for RA60H4452M1 and RA60H4047M1
|
Original
|
PDF
|
AN-UHF-078-A
RA60H4452M1
RA60H4047M1
RA60H4047M1
RA60H4047M1.
ra60h4047m1 application note
AN-UHF-078-A
RA60H4047M
ra60h4047
|
RA60H4047M1
Abstract: mitsubishi bipolar rf power RA60H4452M1 mitsubishi rf
Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-UHF-078 Date : 26th Sep. 2006 Prepared : K. Mori Confirmed : S.Kametani SUBJECT: Electro Static Sensitivity for RA60H4452M1 and RA60H4047M1 GENERAL: RA60H4452M1 and RA60H4047M1 use MOS FET device.
|
Original
|
PDF
|
AN-UHF-078
RA60H4452M1
RA60H4047M1
RA60H4047M1
RA60H4047M1.
mitsubishi bipolar rf power
mitsubishi rf
|
RA30H4047M1
Abstract: RA30H4047 RA30H4552M1 RA30
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-083-C Date : 17th Jul. 2007 Rev.date : 7th Jan. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: Electro Static Sensitivity for RA30H4552M1 and RA30H4047M1
|
Original
|
PDF
|
AN-UHF-083-C
RA30H4552M1
RA30H4047M1
RA30H4047M1
RA30H4047M1.
400-470MHz,
100pF,
RA30H4047
RA30
|
RA30H4047M1
Abstract: mitsubishi rf MITSUBISHI RF POWER MOS FET RA30H4552M1
Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-UHF-083B Date : 17th Jul. 2007 Prepared : K. Mori Confirmed : S.Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: Electro Static Sensitivity for RA30H4552M1 and RA30H4047M1
|
Original
|
PDF
|
AN-UHF-083B
RA30H4552M1
RA30H4047M1
RA30H4047M1
RA30H4047M1.
400-470MHz,
100pF,
mitsubishi rf
MITSUBISHI RF POWER MOS FET
|
RA30H4047M1
Abstract: RA30H4552M1 RA30H4047M
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-083-D Date : 17th Jul. 2007 Rev. Date : 22th Jun. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Electro Static Sensitivity for RA30H4552M1 and RA30H4047M1
|
Original
|
PDF
|
AN-UHF-083-D
RA30H4552M1
RA30H4047M1
RA30H4047M1
RA30H4047M1.
400-470MHz,
100pF,
RA30H4047M
|
image rejection mixer
Abstract: MW front END radar front end X-band marine radar buffer 24V burnout RF power diagram radar circuit NJT1031 mixer X-band low noise
Text: NJT1031 X-Band Radar Front End NJT1031 is designed for the front end of marine radar system. It features a small size and a light weight operable at any frequency between 9.345GHz and 9.475GHz. This front end module consists of GaAs FET low noise amplifier, Image rejection mixer, Local VCO with
|
Original
|
PDF
|
NJT1031
NJT1031
345GHz
475GHz.
41GHz,
90deg
image rejection mixer
MW front END
radar front end
X-band marine radar
buffer 24V
burnout RF power
diagram radar circuit
mixer
X-band low noise
|
33330C
Abstract: tunnel diode application TUNNEL DIODE 20 GHz schottky diode agilent 8472b 423B rf detector diode low power rf detector diode "Point Contact Diode" 8472B
Text: Agilent 33330B/C Coaxial Detectors for OEM and Systems Use Product Overview General Information The Agilent Technologies 33330B/C series of broadband coaxial detectors are specifically designed for use in microwave instrumentation and systems applications such as the detecting element in leveling loops, power
|
Original
|
PDF
|
33330B/C
8470B,
8472B
5952-8164E
33330C
tunnel diode application
TUNNEL DIODE
20 GHz schottky diode
agilent 8472b
423B
rf detector diode low power
rf detector diode
"Point Contact Diode"
8472B
|
radar front end
Abstract: diagram radar circuit radar block diagram diagram radar JRC "Front end module" radar pulse compression radar NJT1959 RADAR radar system with circuit diagram 9410
Text: NJT 1959 X-Band Radar Front End NJT1959 is designed for the front end of radar system. It features a small size and a light weight operable at any frequency between 9.345GHz and 9.475GHz This front end module consists of HEMT low noise amplifier. image rejection mixer. local VCO with buffer amplifier.
|
Original
|
PDF
|
NJT1959
345GHz
475GHz
41GHz
Pd10nsec
NJT1959
radar front end
diagram radar circuit
radar block diagram
diagram radar JRC
"Front end module" radar
pulse compression radar
RADAR
radar system with circuit diagram
9410
|
NJT1946A
Abstract: diagram radar circuit X-band marine radar radar system with circuit diagram diagram radar JRC radar front end front-end radar radar circuit NJT1946 pulse compression radar
Text: NJT1946A X-Band Radar Front End NJT1946A is designed for the front end of marine radar system. It features a small size and a lightweight operable at any frequency between 9.345GHz and 9.475GHz This front-end module consists of GaAs FET low noise amplifier, Image
|
Original
|
PDF
|
NJT1946A
NJT1946A
345GHz
475GHz
diagram radar circuit
X-band marine radar
radar system with circuit diagram
diagram radar JRC
radar front end
front-end radar
radar circuit
NJT1946
pulse compression radar
|
|
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY Gallium Arsenide Planar Doped Barrier PDB Zero Bias Detector Diodes (0.5 to 60GHz) * Features • ■ ■ ■ ■ ■ ■ High RF Pulsed Burnout High ESD Threshold Low “ M f ” Noise Excellent Temperature Stability, Better than Silicon Schottky ZBD’s
|
OCR Scan
|
PDF
|
60GHz)
30dBm
100ohm
10MHz
|
Untitled
Abstract: No abstract text available
Text: Thn% H EW LETT» mL'EM PA CKARD Schottky Barrier D iodes for M ixers and D etectors Technical Data 5082 2817/18 - Features • Low Noise Figure • High Burnout Rating 1 W RF Pulse Power Absorbed • Rugged Design • High Sensitivity O utline 15 0.41 .016
|
OCR Scan
|
PDF
|
5082-28XX
44475A4
QQ17S73
|
Hp5082
Abstract: hp 5082 2817 5082-2817
Text: fhp\ H E W LE T T mL'tim PA C K A R D Schottky Barrier Diodes for Mixers and Detectors Technical Data Features • Low Noise Figure • High Burnout Rating 1 W RF Pulse Power Absorbed • Rugged D esign • High Uniformity • Both Medium and Low Barrier Diodes Available
|
OCR Scan
|
PDF
|
|
1N23 diode
Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
Text: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure
|
OCR Scan
|
PDF
|
|
1N23 diode
Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
Text: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re ceiver to deteriorate no greater than 0.1 dB due to local
|
OCR Scan
|
PDF
|
|
operation of basic limiter circuit
Abstract: burnout RF power
Text: Protection for Power Sensitive Microwave Components PIN diode limiters are designed to protect power sensitive microwave components against a variety of high pow er C W and pulsed microwave signals. Basic PIN limiters utilize diodes resulting in low insertion loss at low power levels. A s the power level increases, the incident
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Application Note Protection for Power Sensitive Microwave Components M509 PIN diode lim iters are designed to p rote ct p o w e r sensitive m icrow ave com ponents against a variety o f high p o w e r C W and pulsed m icrow ave signals. Basic PIN lim iters utilize diodes
|
OCR Scan
|
PDF
|
|
1N23 diode
Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
Text: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for
|
OCR Scan
|
PDF
|
1N3205
1N25XX,
1N78X,
DMA649X-XXX
1N23 diode
1N53AR
1N26A diode
Silicon Point Contact Mixer Diodes
1N415
1N832A
N178
kaba
1N23WG
1N26BR
|
metal detectors circuit
Abstract: sdlva diode mixers Radar Warning Receiver
Text: PRELIMINARY Gallium Arsenide Planar Doped Barrier PDB Diode Mixers and Detectors * Features • ■ ■ ■ ■ ■ ■ ■ PDB Diode Structures High R F Pulsed Burnout High E S D Threshold Low “ 1 / / ” Noise Low Noise Figure with Low LO Power Excellent Voltage Sensitivity
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: 7744H Series Description The 7744H series is intended for secure mechanical attachment in stripline and m icrostrip assemblies, where RF and video intercon nections are soldered in place. The usable RF input power range is from "I5 5 through +20 dBm, above which the detector is in saturation with permanent degrada
|
OCR Scan
|
PDF
|
7744H
-20dBm.
7744H-0023
|
