Untitled
Abstract: No abstract text available
Text: 'Izts.zuij <^>£.mi- -ondiictoi iJ-^ioaacti, Una. Cx TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUR52 HIGH CURRENT NPN SILICON TRANSISTOR . NPN TRANSISTOR . MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT
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BUR52
BUR52
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Untitled
Abstract: No abstract text available
Text: BUR52 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUR52
O204AA)
18-Jun-02
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Untitled
Abstract: No abstract text available
Text: BUR52S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUR52S
O204AE)
1-Aug-02
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Untitled
Abstract: No abstract text available
Text: BUR52 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUR52
O204AA)
16-Jul-02
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to204ae
Abstract: No abstract text available
Text: BUR52S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUR52S
O204AE)
17-Jul-02
to204ae
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Untitled
Abstract: No abstract text available
Text: BUR52 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUR52
O204AA)
31-Jul-02
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BUR52
Abstract: No abstract text available
Text: BUR52 HIGH CURRENT NPN SILICON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The BUR52 is a silicon Multiepitaxial Planar NPN
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BUR52
BUR52
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NPN 350W
Abstract: BUR52
Text: BUR52 MECHANICAL DATA Dimensions in mm inches HIGH CURRENT NPN SILICON TRANSISTOR 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) FEATURES 1 • HIGH PULSE POWER 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063)
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BUR52
O204AE)
NPN 350W
BUR52
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Untitled
Abstract: No abstract text available
Text: BUR52S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUR52S
O204AE)
18-Jun-02
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NPN 350W
Abstract: BUR52
Text: BUR52 MECHANICAL DATA Dimensions in mm inches HIGH CURRENT NPN SILICON TRANSISTOR 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) FEATURES 1 • HIGH PULSE POWER 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063)
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BUR52
O204AE)
NPN 350W
BUR52
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BUR52
Abstract: No abstract text available
Text: BUR52 HIGH CURRENT NPN SILICON TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BUR52 is a silicon multiepitaxial planar NPN transistors in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.
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BUR52
BUR52
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Untitled
Abstract: No abstract text available
Text: BUR52S MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) HIGH CURRENT NPN SILICON TRANSISTOR 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675)
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BUR52S
O-204AA)
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P003I
Abstract: bur52
Text: BUR52 HIGH CURRENT NPN SILICON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 1 ■ 2 DESCRIPTION
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BUR52
BUR52
P003I
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BUR52
Abstract: No abstract text available
Text: BUR52 HIGH CURRENT NPN SILICON TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The BUR52 is a silicon multiepitaxial planar NPN
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BUR52
BUR52
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BUR52
Abstract: sgs-thomson TO-3
Text: BUR52 HIGH CURRENT NPN SILICON TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVE APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BUR52 is a silicon multiepitaxial planar NPN
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BUR52
BUR52
sgs-thomson TO-3
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BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
BUV48I
BU808DXI
BD699
buv18a
BD241CFI
transistor 2SA1046
BUW52I
BU808DFI equivalent
BU724AS
2SA1046
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fw26025
Abstract: FW26025A fw26025a1 equivalent fw26025a1 st5027 st1802fx st2310fx MD1803DFX BUL312FP BU808DFH
Text: Power bipolar transistors TO-264 Device type NPN VCEO [V] PNP HD1530JL* HD1750JL* 700 800 VCBO VCES VCEV [V] IC [A] 1500 1700 26 24 hFE @ IC VCE Ptot [W] 200 200 VCE sat @ IC IB Application Min Max [A] [V] [V] [A] [mA] 5.5 5.5 9 9.5 13 12 5 5 2 3 13 12 3250
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O-264
HD1530JL*
HD1750JL*
O-220
OT-223
O-220FP
OT23-6L
O-126
O-220FH
ISOWATT218
fw26025
FW26025A
fw26025a1 equivalent
fw26025a1
st5027
st1802fx
st2310fx
MD1803DFX
BUL312FP
BU808DFH
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BUR52
Abstract: No abstract text available
Text: SGS-THOMSON BUR52 ^DO^ ô E[L[i(SÏÏ^ [MD(Oi HIGH CURRENT HIGH SPEED, HIGH POWER DARLINGTONS DESCRIPTION The BUR52 is a silicon multiepitaxiai planar NPN transistor in modified Jedec TO-3 metal case, inten ded for use in switching and linear applications in
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BUR52
BUR52
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BUS11A
Abstract: BUV11 BUT91
Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUR51 BUR51S BUR52 BUR52S BUS11 BUS11 CECC BUS11A BUS11A CECC BUS 12 BUS12A BUS 13 BUS13A BUSI 4 BUS14A BUS50 BUS51 BUS52 BUT13 BUT13P BUT70 BUT70MC BUT72 BUT90 BUT90C BUT91 BUT92 BUT92A BUT92AS
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BUR51
BUR51S
BUR52
BUR52S
BUS11
BUS11A
BUS12A
BUS13A
BUV11
BUT91
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Untitled
Abstract: No abstract text available
Text: rZ Z SGS-THOMSON ^7# ssaœ iiuiÊTO©«e8 BUR52 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR • MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL
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BUR52
BUR52
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON iMm@ignnCTisì«ii Sgì BUR52 HIGH CURRENT NPN SILICON TRANSISTOR . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR MAINTAINS GOOD SWITCHING PERFORMANCE EVEN W ITHOUT NEGATIVE BASE DRIVE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
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BUR52
BUR52
P003I
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Untitled
Abstract: No abstract text available
Text: CRIMSON SE MICO ND UC TO R INC TT D eTJI e SIMD^ b 0DQ0337 4 • . 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 00 3 3 7 ! D ' ' f ' 3 3 - 0/ ! EPITAXIAL PLANAR - TO -66 NPN PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428
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0DQ0337
BUR10
BUR11
BUR12
BUX77
2N4910
2N4911
2N4912
N5427
2N5428
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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mje520
Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
Text: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50
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BD433
MJE200
MJE520
BD435
2N4921
2IM5190
2IM6037
MJE521
MJE180
BD135
SGS1F444
SGSD00030
e13008
BUT23
2m3771
BUT62
BUW42AP
2n5337
BUW32AP
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