PROFET BTS840 application note
Abstract: BTS 640S2 S BTS640S2 BTS740S2 BTS840S2 640S2 740S2 BTS740 58art BTS 740 s2
Text: Application Note PROFET Behavioural SABER - Models BTS 640 S2, BTS 740 S2, BTS 840 S2 Automotive Power Semiconductors Application Note Behavioural Models for SABER Simulations MAST PROFETs BTS 640 S2, BTS740 S2, BTS840 S2 by Dieter Metzner Support: simulate@infineon.com
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BTS740
BTS840
feature640
PROFET BTS840 application note
BTS 640S2 S
BTS640S2
BTS740S2
BTS840S2
640S2
740S2
58art
BTS 740 s2
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12v DC geared motor
Abstract: hELLA 12V 40A Relay ELECTRONIC 12V RELAY HELLA ptc resetable low current fuse anps039e bts 425 l1 OSRAM halogen lamp H4 fuse smd tn BTS 442 E2 equivalent car halogen lamp h4
Text: HL application note Dr. Alfons Graf Siemens AG, HL PS TM Hannes Estl Siemens AG, HL PS TM2 Fuse Function with PROFET Highside Power Switches Abstract: The protection functions originally incorporated in smart power switches for self-protection have become so sophisticated that they are now capable of protecting not only themselves but
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de/Semiconductor/products/36/pdf/baba96a
de/Semiconductor/products/36/pdf/hdt
de/Semiconductor/products/36/pdf/hdt972e
Anps039e
12v DC geared motor
hELLA 12V 40A Relay
ELECTRONIC 12V RELAY HELLA
ptc resetable low current fuse
bts 425 l1
OSRAM halogen lamp H4
fuse smd tn
BTS 442 E2 equivalent
car halogen lamp h4
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bts 425 l1
Abstract: ANPS039D PROFET TO-220SMD BTS550 BTS412A bts740 BTS432E2 BTS 740 s2 PROFET 60V 11A
Text: HL application note Dr. Alfons Graf Siemens AG, HL PS TM Hannes Estl Siemens AG, HL PS TM2 Sicherungsersatz mit PROFET Highside Leistungsschaltern Zusammenfassung: Die ursprünglich zum Selbstschutz in Smart Leistungsschalter integrierten Schutzfunktionen
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de/Semiconductor/products/36/pdf/baba96a
de/Semiconductor/products/36/pdf/hdt
de/Semiconductor/products/36/pdf/hdt972e
Anps039d
bts 425 l1
PROFET
TO-220SMD
BTS550
BTS412A
bts740
BTS432E2
BTS 740 s2
PROFET 60V 11A
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12v DC geared motor
Abstract: hELLA 12V 40A Relay OSRAM halogen lamp H4 bts 425 l1 car halogen lamp h4 ELECTRONIC 12V RELAY HELLA CAR IGNITION WITH SCR BTS 621 alternative hella PROFET
Text: HL application note Dr. Alfons Graf Siemens AG, HL PS TM Hannes Estl Siemens AG, HL PS TM2 Fuse Function with PROFET Highside Power Switches Abstract: The protection functions originally incorporated in smart power switches for self-protection have become so sophisticated that they are now capable of protecting not only themselves but
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de/Semiconductor/products/36/pdf/baba96a
de/Semiconductor/products/36/pdf/hdt
de/Semiconductor/products/36/pdf/hdt972e
Anps039e
12v DC geared motor
hELLA 12V 40A Relay
OSRAM halogen lamp H4
bts 425 l1
car halogen lamp h4
ELECTRONIC 12V RELAY HELLA
CAR IGNITION WITH SCR
BTS 621 alternative
hella
PROFET
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power window motor 12v
Abstract: 752r bus Door control circuit 6163D bts723 central lock door gasoline direct injection power window central locking 4268GS
Text: Anfang 42V PowerNet PowerNet in in Door Door Application Application 42V SAE 2000 World Congress March 6-9, 2000, Detroit, Michigan, USA Alfons Graf - Infineon Technologies AG 42V PowerNet in Door Application Introduction 42V and the influence on semiconductors
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4V/42V
power window motor 12v
752r
bus Door control circuit
6163D
bts723
central lock door
gasoline direct injection
power window
central locking
4268GS
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436L2
Abstract: BTS436L2 Q67060-S6111-A2 Q67060-S6111-A3 Q67060-S6111-A4
Text: BTS436L2 Smart High-Side Power Switch One Channel: 38mΩ Status Feedback Product Summary On-state Resistance Operating Voltage Nominal load current Current limitation Package RON Vbb on IL(NOM) IL(SCr) 38mΩ 4.75.41V 9.8A 40A TO 220-5-11 TO-263-5-2 Standard
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BTS436L2
O-263-5-2
O-220-5-12
2003-Oct-01
436L2
BTS436L2
Q67060-S6111-A2
Q67060-S6111-A3
Q67060-S6111-A4
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428l2
Abstract: SIEMENS TD-400 BTS436L2 BTS436L2G siemens functional description profet BTS436L2 S siemens functional profet
Text: PROFET BTS436L2 Smart High-Side Power Switch One Channel: 38mΩ Status Feedback Product Summary On-state Resistance Operating Voltage Nominal load current Current limitation Package RON Vbb on IL(NOM) IL(SCr) 38mΩ 4.75.41V 9.8A 40A TO 220-5-11 TO-263-5-2
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BTS436L2
O-263-5-2
O-220-5-12
1999-Feb-26
428l2
SIEMENS TD-400
BTS436L2
BTS436L2G
siemens functional description profet
BTS436L2 S
siemens functional profet
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82489dx
Abstract: 8086 opcode table for 8086 microprocessor PMI 9523 sensor LDR 8086 with eprom addressing modes 8086 D3000 80186 architecture intel 82489dx interfacing of RAM with 8086
Text: IA-32 Intel Architecture Software Developer’s Manual Volume 3: System Programming Guide NOTE: The IA-32 Intel Architecture Developer’s Manual consists of three books: Basic Architecture, Order Number 245470; Instruction Set Reference Manual, Order Number 245471; and the System Programming
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IA-32
156Th
82489dx
8086 opcode table for 8086 microprocessor
PMI 9523
sensor LDR
8086 with eprom
addressing modes 8086
D3000
80186 architecture
intel 82489dx
interfacing of RAM with 8086
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436L2
Abstract: ITS436L2 436-L2 profet SP000221231 SP000221232 ITS436L2S SCR 40A 24V PG-TO220-5-12
Text: PROFET ITS436L2 Smart High-Side Power Switch for Industrial Applications One Channel: 38mΩ Status Feedback Product Summary On-state Resistance Operating Voltage Nominal load current Current limitation Operating Temperature Package RON Vbb on IL(NOM) IL(SCr)
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ITS436L2
PG-TO220-5-11
PG-TO220-5-12
D-81669
2006-Mar-28
436L2
ITS436L2
436-L2
profet
SP000221231
SP000221232
ITS436L2S
SCR 40A 24V
PG-TO220-5-12
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Untitled
Abstract: No abstract text available
Text: Datasheet BTS737S3 Smart High-Side Power Switch Four Channels: 4 x 35mΩ Advanced Current Sense Product Summary Package Operating Voltage Vbb on Active channels one On-state Resistance RON 35mΩ Nominal load current IL(NOM) 5.4A Current limitation IL(SCr)
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BTS737S3
P-DSO-28
2004-Sep-16
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BTS737S3
Abstract: GPS05123 Q67060-S6133
Text: Datasheet BTS737S3 Smart High-Side Power Switch Four Channels: 4 x 35mΩ Advanced Current Sense Product Summary Package Operating Voltage Vbb on Active channels one On-state Resistance RON 35mΩ Nominal load current IL(NOM) 5.4A Current limitation IL(SCr)
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BTS737S3
P-DSO-28
2004-Feb-19
BTS737S3
GPS05123
Q67060-S6133
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half bridge converter 2kw
Abstract: 5kw 20khz diagram induction heating 66a hall sensor TLE4209A XMC4700 ISO26262 1ED020112f TLE7183QU TLE5009 btm7752
Text: Efficient Semiconductor Solutions for Motor Control and Drives www.infineon.com/motorcontrol Contents Solutions for Motor Control and Drives 04 Low-Voltage Applications 06 High-Voltage Applications 08 Product Families 10 Microcontrollers 10 Low-Voltage Products
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ISL6364A
Abstract: ISL6364 ntc 640 10k isl6364crz isl6363 12v 10-250 kHz pulse generator IMVP7 BTS 640 N1 VTT vr12 intel IMVP7
Text: Dual 4-Phase + 1-Phase PWM Controller for VR12/IMVP7 Applications ISL6364 Features The ISL6364 is a dual PWM controller; its 4-phase PWMs control the microprocessor core or the memory voltage regulator, while its single-phase PWM controls the peripheral voltage regulator
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VR12/IMVP7
ISL6364
ISL6364
5m-1994.
FN6861
ISL6364A
ntc 640 10k
isl6364crz
isl6363
12v 10-250 kHz pulse generator
IMVP7
BTS 640 N1
VTT vr12
intel IMVP7
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Untitled
Abstract: No abstract text available
Text: SIEMENS TEMPFET BTS 240A Features • • • • N channei Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Type v DS h ^OS on Package Ordering Code BTS 240A 50 V 58 A 0.018 n TO-218AA C67078-A5100-A3
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O-218AA
C67078-A5100-A3
O-218
C67078-S5100-A3
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G7N60C
Abstract: 7N60C 627 DIODE 7N60 STA 933 D7N60
Text: HARRIS S E M I C O N D U C T O R HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Chan nel IG BTs Jan ua ry 1997 Features Packaging J E D E C TO-22QAB • 14A, 600V at Tc = 25 °C • 600V Sw itching SOA Capability • T y p i c a l F a ll T i m e . 1 4 0 n s a t T j = 1 S 0 ° C
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HGTD7N60C3,
HGTD7N60C3S,
HGTP7N60C3
O-22QAB
O-251
G7N60C
7N60C
627 DIODE
7N60
STA 933
D7N60
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Untitled
Abstract: No abstract text available
Text: 10 SD-39910-002 F E 10,16 4,0 3,81 1,150] TYP 1,40 [,055] f MATERIAL: SEE TABLE FINISHES: SEE TABLE PRDDUET SPECIFICATION: NDT REQUIRED PACKAGING: NDT REQUIRED MATES WITH: NDNE PART IS DESIGNED TD MEET UL 1059 CLASS C 600V, 40A 7, STAGGERED PC TAIL PDSITIDN DN ALTERNATE
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SD-39910-002
SD-38120-005
9135XX
SD-E9910-002
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Untitled
Abstract: No abstract text available
Text: DISTRIBUTION: LENGTH T A B LE " Y" N O.CIRCUITS 03 0.800 1 .26 04 1 .200 1 .66 05 1 .600 2.06 06 2.000 2.46 07 2.400 2.86 08 2.800 3.26 09 3.200 3.66 10 3.600 4.06 11 4.000 4.46 12 4.400 4.86 13 4.800 5.26 14 5.200 5.66 n NOTES: -PART UL IS DESIGNED 1059 C LA SS
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135-XX01-0000
03Z46
9135XX0
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G1302
Abstract: No abstract text available
Text: SD- 39970-004 •PDZI-SLOT SCREW SHOWN, SLOTTED SCREW OPTIONAL OPTIONAL IMPRINTING, 3,2 [1/8] 10A SHOWN, 3,01 TYP [,150] 10, IB [,400] 11A REVERSED © 29,71 [1,17] 1,40 [,055] RECOMMENDED PTH PATTERN 01,52 [.060] MIN, PTH 5,84 [,23] [,16] 1 3,02 [,15] 0,47 +/-.25
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C300V,
E--535
g-13-02
SD-39970-004
G1302
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IGBT IXGH40N60A
Abstract: IXGH40N60A IXGH40N60 40N60A
Text: IXGH40N60A IGBT V CES 600 V 75 A 3.0 V ^C25 L O W V CE S„ High speed V CE(sat) Not for new designs Symbol Test Conditions Maximum Ratings v ces T j = 25° C to 150° C 600 V V CGR T j, = 25° C to 150° C; RC„at = 1 MQ 600 V VGES Continuous J-20 V VGE*
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IXGH40N60A
O-247
40N60A
IGBT IXGH40N60A
IXGH40N60A
IXGH40N60
40N60A
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ITS25F12
Abstract: ITS25F12P T0247 pspice high frequency igbt
Text: M ITEL S E M IC O N D U C T O R ITS25F12 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4718-2.3 DS4718-3.2 March 1999 Key Parameters The ITS25F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for
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ITS25F12
DS4718-2
DS4718-3
ITS25F12
T0247
ITS25F12P
T0247
pspice high frequency igbt
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BTS 2146
Abstract: No abstract text available
Text: n ix Y S IGBT IXSH 40N60 Low VCE sat VCES I C25 v CE(sat) 600 V 75 A 2.5 V Short Circuit SOA Capability Symbol Test Conditions V CES T j =25°C to150°C 600 V VCGR T d = 25° C to 150° C; ReE = 1 M£2 600 V VSES Continuous ±20 V vOEM Transient ±30 V 'c25
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40N60
to150
O-247AD
BTS 2146
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pspice high frequency igbt
Abstract: DS4713-2 ITS23F06 ITS23F06P T0247
Text: M ITEL S E M IC O N D U C T O R ITS23F06 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4713-2.3 DS4713-3.2 March 1999 Key Parameters The ITS23F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for
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ITS23F06
DS4713-2
DS4713-3
ITS23F06
T0247
pspice high frequency igbt
ITS23F06P
T0247
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Untitled
Abstract: No abstract text available
Text: SIEMENS PRÜFET BTS436L2 Smart High-Side Power Switch One Channel: 38m& Status Feedback Product Summary Package On-state Resistance R0 n 38mi2 Operating Voltage Vbb on 4.75.41V Nominal load current I i_(n o m ) 9.8A Current limitation l L(S C r) 40A General Description
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BTS436L2
38mi2
1999-Feb-26
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ssr 40ac
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR FEATURES • • • • • • • • • • • • • • • Four E 1 CEPT or PCM-30 /ISDN-PRI framing transceivers All four framers are fully independent; transm it and receive sections of each framer are fully independent Frames to FAS, CAS, CCS, and CRC4
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DS21Q44
PCM-30)
ssr 40ac
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