pspice high frequency igbt
Abstract: DS4713-2 ITS23F06 ITS23F06P T0247
Text: M ITEL S E M IC O N D U C T O R ITS23F06 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4713-2.3 DS4713-3.2 March 1999 Key Parameters The ITS23F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for
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ITS23F06
DS4713-2
DS4713-3
ITS23F06
T0247
pspice high frequency igbt
ITS23F06P
T0247
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DS4713-2
Abstract: No abstract text available
Text: 3Ë GEC P L E S S E Y SEPTEMBER 1997 SEMICONDUCTORS ADVANCE INFORMATION DS4713-2.2 ITS23F06 POWERLINE N-CHANNEL IGBT The ITS23F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage
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OCR Scan
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DS4713-2
ITS23F06
ITS23F06
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