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    BST H 04 20 Price and Stock

    Vishay Intertechnologies PTN0402H2001BST0

    Thin Film Resistors - SMD PTN0402 50PPM 2K 0.1% S T0 e1
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    Mouser Electronics PTN0402H2001BST0
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    Vishay Intertechnologies PTN0402H8201BST1

    Thin Film Resistors - SMD PTN0402 50PPM 8.2K 0.1% S T1 E1
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    Mouser Electronics PTN0402H8201BST1
    • 1 $0.7
    • 10 $0.507
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    Vishay Intertechnologies PTN0402H7320BST1

    Thin Film Resistors - SMD PTN0402 50PPM 732 0.1% S T1 e1
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    Mouser Electronics PTN0402H7320BST1
    • 1 $0.7
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    Vishay Intertechnologies PTN1206H1004BST1

    Thin Film Resistors - SMD 1M OHM .1% 50PPM 2/5W
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    Mouser Electronics PTN1206H1004BST1
    • 1 $0.88
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    Vishay Intertechnologies FC0402H5620BSTS

    High Frequency/RF Resistors FC0402 50PPM 562 0.1% S TS e1
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    Mouser Electronics FC0402H5620BSTS
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    BST H 04 20 Datasheets Context Search

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    DDR333

    Abstract: IS43R16800A-6
    Text: ISSI IS43R16800A-6 8Meg x 16 128-MBIT DDR SDRAM PRELIMINARY INFORMATION APRIL 2006 FEATURES DEVICE OVERVIEW • • • • ISSI’s 128-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 134,217,728-bit memory


    Original     		IS43R16800A-6 128-MBIT 728-bit 32M-bit 16-bit DDR333 IS43R16800A-6 PDF

    IS43R32400B

    Abstract: 43R32400B
    Text: IS43R32400B 4Mx32 128Mb DDR Synchronous DRAM PRELIMINARY INFORMATION MAY 2008 FEATURES: DESCRIPTION: • Power supply: VDD, VDDQ = 2.5V ± 0.125V ISSI's 128Mb DDR SDRAM uses a double-data-rate DDR architecture with two data transfers per clock cycle. The high-speed data transfer is realized by the


    Original     		IS43R32400B 4Mx32 128Mb 400Mbps intern474 IS43R32400B 43R32400B PDF

    IS42S16160C

    Abstract: IS42S16160C-75TL
    Text: IS42S83200C IS42S16160C 256 Mb Single Data Rate Synchronous DRAM APRIL 2009 General Description IS42S83200C is organized as 4-bank x 8,388,608-word x 8-bit Synchronous DRAM with LVTTL interface and IS42S16160C is organized as 4-bank x 4,194,304-word x 16-bit. All inputs and outputs are referenced to


    Original     		IS42S83200C IS42S16160C 608-word 304-word 16-bit. 166MHz, IS42S16160C-75TL PDF

    Untitled

    Abstract: No abstract text available
    Text: IS45S83200C IS45S16160C 256฀Mb฀Single฀Data฀Rate฀Synchronous฀DRAM APRIL 2009 General Description IS45S83200C is organized as 4-bank x 8,388,608-word x 8-bit Synchronous DRAM with LVTTL interface and IS45S16160C is organized as 4-bank x 4,194,304-word x 16-bit. All inputs and outputs are referenced to


    Original     		IS45S83200C IS45S16160C IS45S83200C 608-word IS45S16160C 304-word 16-bit. 166MHz, PDF

    IS45S16160C

    Abstract: IS45S
    Text: IS45S83200C IS45S16160C 256 Mb Single Data Rate Synchronous DRAM APRIL 2009 General Description IS45S83200C is organized as 4-bank x 8,388,608-word x 8-bit Synchronous DRAM with LVTTL interface and IS45S16160C is organized as 4-bank x 4,194,304-word x 16-bit. All inputs and outputs are referenced to


    Original     		IS45S83200C IS45S16160C 608-word 304-word 16-bit. 166MHz, IS45S PDF

    IS42S16160C

    Abstract: No abstract text available
    Text: IS42S83200C IS42S16160C 256฀Mb฀Single฀Data฀Rate฀Synchronous฀DRAM APRIL 2009 General Description IS42S83200C is organized as 4-bank x 8,388,608-word x 8-bit Synchronous DRAM with LVTTL interface and IS42S16160C is organized as 4-bank x 4,194,304-word x 16-bit. All inputs and outputs are referenced to


    Original     		IS42S83200C IS42S16160C IS42S83200C 608-word IS42S16160C 304-word 16-bit. 166MHz, PDF

    Untitled

    Abstract: No abstract text available
    Text: IS42S16100A1 IS42S16100A2 ISSI 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM FEBRUARY 2003 FEATURES • Clock frequencies: 100 MHz, 143 MHz, 166 MHz (A1 only) • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and


    Original     		IS42S16100A1 IS42S16100A2 16-MBIT) IS42S16100A1-6T IS42S16100A1-7T IS42S16100A2-7T IS42S16100A1-10T IS42S16100A2-10T PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS42S16100C 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently


    Original     		IS42S16100C 16-MBIT) 143MHz IS42S16100C-5T IS42S16100C-5TL IS42S16100C-6T IS42S16100C-6TL IS42S16100C-7T PDF

    IS42S16100A1

    Abstract: IS42S16100A1-7TL
    Text: ISSI IS42S16100A1 April 2003 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 166, 143, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and


    Original     		IS42S16100A1 16-MBIT) 143MHz IS42S16100A1-6T IS42S16100A1-6TL IS42S16100A1-7T IS42S16100A1-7TL IS42S16100A1-10T IS42S16100A1-10TL IS42S16100A1 IS42S16100A1-7TL PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS42S16100C 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently


    Original     		IS42S16100C 16-MBIT) terminati11 PDF

    IS42S16100C1

    Abstract: No abstract text available
    Text: ISSI IS42S16100C1 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently


    Original     		IS42S16100C1 16-MBIT) IS42S16100C1 PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS42S16100C1 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently


    Original     		IS42S16100C1 16-MBIT) 143MHz IS42S16100C1-5T IS42S16100C1-5TL IS42S16100C1-6T IS42S16100C1-6TL IS42S16100C1-7T PDF

    CN256

    Abstract: No abstract text available
    Text: ISSI IS42S16100A2 APRIL 2003 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequencies: 100 MHz, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and


    Original     		IS42S16100A2 16-MBIT) 143MHz IS42S16100A2-7T IS42S16100A2-10T 400-mil CN256 PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS42VS16100D 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCED INFORMATION APRIL 2005 FEATURES • Clock frequency: 133, 100, 83 MHz • Power Supply: 1.8V • Fully synchronous; all signals referenced to a positive clock edge


    Original     		IS42VS16100D 16-MBIT) IS42VS16100D 288-word 16-bit PDF

    IS42S32400

    Abstract: 42S32400
    Text: IS42S32400 4M x 32 128Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION MARCH 2010 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed


    Original     		IS42S32400 128Mb 86-pin 90-ball-Pin 90-Ball MO-207 IS42S32400 42S32400 PDF

    is42s86400

    Abstract: No abstract text available
    Text: IS42S86400B IS42S16320B 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION APRIL 2008 FEATURES • Clock frequency: 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


    Original     		IS42S86400B IS42S16320B 512Mb IS42S86400B 54-pin 54-ball IS42S86400B, 11x13mm is42s86400 PDF

    45R16800E

    Abstract: IS45R16800E-75BLA2 IS45S16800E 2MX16X4
    Text: IS42/45R81600E IS42/45R16800E 16M x 8, 8M x16 APRIL 2010 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 133, 125 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and


    Original     		IS42/45R81600E IS42/45R16800E 128Mb IS42/45R81600E 54-pin 54-ball 45R16800E IS45R16800E-75BLA2 IS45S16800E 2MX16X4 PDF

    IS45S16320B-7TLA2

    Abstract: IS42S86400B IS42S16320B IS45S16320B
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 APRIL 2011 512Mb SYNCHRONOUS DRAM OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge


    Original     		IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B Sel2/45S16320B 11x13mm IS45S16320B-7TLA2 IS42S86400B IS42S16320B IS45S16320B PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS42S32400B 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 167, 143, 125, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge PRELIMINARY INFORMATION APRIL 2005


    Original     		IS42S32400B 128-MBIT PDF

    Untitled

    Abstract: No abstract text available
    Text: IS42/45R81600E IS42/45R16800E 16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM FEATURES •฀ Clock฀frequency:฀133,฀125฀MHz •฀ Fully฀synchronous;฀all฀signals฀referenced฀to฀a฀ positive clock edge APRIL 2010 OVERVIEW ฀


    Original     		IS42/45R81600E IS42/45R16800E 128Mb 128Mbà IS42/45R81600Eà IS42/45R16800Eà IS45R16800E-75BLA2à IS45R16800E-8BLA2à 54-ballà PDF

    IS45S32400B

    Abstract: No abstract text available
    Text: ISSI IS45S32400B 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 143, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge APRIL 2006 OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed


    Original     		IS45S32400B 128-MBIT 128Mb IS45S32400B PDF

    Untitled

    Abstract: No abstract text available
    Text: IS45S81600E IS45S16800E 16M x 8, 8M x16 PRELIMINARY INFORMATION APRIL 2008 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed


    Original     		IS45S81600E IS45S16800E 128Mb IS45S81600E PDF

    Untitled

    Abstract: No abstract text available
    Text: IS42S81600E IS42S16800E 16M x 8, 8M x16 PRELIMINARY INFORMATION APRIL 2008 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed


    Original     		IS42S81600E IS42S16800E 128Mb IS42S81600E IS42S81600E, PDF

    IS42S16160D

    Abstract: IS42S16160D-7TL is42s16160d-7tli IS45S16160D-7BLA1 IS42S16160D-7BL IS42S83200D-75EBL IS42S83200D is42s16160d-7bli is42s83200d-6tli IS42S83200D-7TLI
    Text: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 APRIL 2010 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed


    Original     		IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg 16Meg 256-MBIT 256Mb IS42S83200D IS42S16160D IS42S16160D-7TL is42s16160d-7tli IS45S16160D-7BLA1 IS42S16160D-7BL IS42S83200D-75EBL IS42S83200D is42s16160d-7bli is42s83200d-6tli IS42S83200D-7TLI PDF