BSS71 MOTOROLA Search Results

BSS71 MOTOROLA Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
AS839		Coilcraft Inc	DSL transformer, for Motorola MC145660, SMT, not RoHS
AS8397-		Coilcraft Inc	DSL transformer, for Motorola MC145660, SMT, not RoHS

BSS71 MOTOROLA Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BSS71 MOTOROLA Abstract: BSS71 1N914 Text: MOTOROLA Order this document by BSS71/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN Silicon BSS71 COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 200 Vdc Collector– Base Voltage VCBO	Original	BSS71/D BSS71 BSS71 MOTOROLA BSS71 1N914	PDF
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r	Original	MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237	PDF
2N16 Abstract: BC237 BCY72 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	MGSF1P02ELT1 L218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N16 BC237 BCY72	PDF
2n2222 h 331 transistors Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	MGSF3442XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n2222 h 331 transistors 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1	PDF
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10	Original	MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237	PDF
BC237 Abstract: MPSA06 346 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste	Original	MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 MMBD1000LT1 OT-23 O-236AB) V218A MSC1621T1 MSC2404 BC237 MPSA06 346	PDF
BC237 Abstract: MARKING CODE diode sod123 W1 K 2056 transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	MGSF3455XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1 K 2056 transistor	PDF
2N643 Abstract: BC237 MARKING DP SOT-363 DO204AA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair	Original	MMBD1010LT1 MMBD2010T1 MMBD3010T1 MMBD1010LT1 S218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N643 BC237 MARKING DP SOT-363 DO204AA	PDF
BC237 Abstract: MMBD2005T1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair	Original	MMBD1005LT1 MMBD2005T1 MMBD3005T1 MMBD1005LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237	PDF
BC237 Abstract: MARKING CODE diode sod123 W1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	MGSF3441XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1	PDF
MMBF4856 Abstract: transistor equivalent 2n5551 BF245 application note MSC2404 MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MDC3105LT1 Motorola Preferred Device Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to	Original	Automat218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MMBF4856 transistor equivalent 2n5551 BF245 application note MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093	PDF
2n3819 replacement Abstract: 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Device	Original	MMBV809LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n3819 replacement 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265	PDF
MIL-STD-750 method 1037 Abstract: BC237 BF245 MPF4856 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOD-123 Schottky Barrier Diodes MMSD301T1 MMSD701T1 The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other	Original	OD-123 MMSD301T1, MMSD701T1 MMBD301LT1, MMBD701LT1 MMSD301T1 MMSD701T1 m218A MIL-STD-750 method 1037 BC237 BF245 MPF4856	PDF
BC237 Abstract: Fet BF245 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0300L 3 DRAIN Motorola Preferred Device 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 V Drain – Gate Voltage VDGR 60 V	Original	VN0300L 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 Fet BF245	PDF

mpsa63 replace Abstract: BC237 MPSA63 equivalent J111 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA62 MPSA63 MPSA64 * PNP Silicon COLLECTOR 3 MPSA55, MPSA56 BASE 2 For Specifications, See MPSA05, MPSA06 Data *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Symbol MPSA62 MPSA63 MPSA64 Unit	Original	MPSA62 MPSA63 MPSA64 MPSA55, MPSA56 MPSA05, MPSA06 MPSA62 mpsa63 replace BC237 MPSA63 equivalent J111	PDF
SOT23 JEDEC standard orientation pad size Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is	Original	OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 uni218A MSC1621T1 SOT23 JEDEC standard orientation pad size sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458	PDF
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAS40-04LT1 Preliminary Information Common Anode Schottky Barrier Diode Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces	Original	BAS40-04LT1 236AB) Diss218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237	PDF
motorola JFET 2N3819 Abstract: C4 SOT-323 equivalent transistor 2N1711 mvm010 marking code C5 sot23 BC237 JFET 2N3819 MOTOROLA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifier Transistor N–Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current	Original	MMBFJ309LT1 MMBFJ310LT1 236AB) MMBFJ309LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 motorola JFET 2N3819 C4 SOT-323 equivalent transistor 2N1711 mvm010 marking code C5 sot23 BC237 JFET 2N3819 MOTOROLA	PDF
transistor equivalent CT 2n5551 Abstract: EQUIVALENT TRANSISTOR bc109c BC237 BC238 h parameter 1N5148 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5148 1N5148A Designed for electronic tuning and harmonic–generation applications, and provide solid–state reliability to replace mechanical tuning methods. • Guaranteed High–Frequency Q	Original	1N5148 1N5148A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 transistor equivalent CT 2n5551 EQUIVALENT TRANSISTOR bc109c BC237 BC238 h parameter	PDF
BC237 Abstract: MMBV2107 BCY72 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV74LT1 ANODE 1 3 CATHODE 2 ANODE 3 1 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)	Original	BAV74LT1 236AB) DEVICE218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 MMBV2107 BCY72	PDF
BC237 Abstract: 2n2222 sot-23 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts	Original	MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 Therma218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 BC237 2n2222 sot-23	PDF
BSS71 MOTOROLA Abstract: BSS71 Text: MOTOROLA Order this document by BSS71/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN Silicon BSS71 COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector-Em itter Voltage v CEO 200 Vdc Collector-Base Voltage v CBO 200 Vdc Em itter-Base Voltage	OCR Scan	BSS71/D BSS71 BSS71 MOTOROLA BSS71	PDF
HEP transistors Abstract: motorola hep BSS71 MOTOROLA 2N3440 MOTOROLA BF337 MM421 transistors for uhf oscillators BSS72 2n3439 motorola MM6427 Text: METAL SMALL-SIGNAL TRANSISTORS continued Darlington Transistors These transisto rs are ch a ra c te rize d for very high g ain and input im ped an ce a p p lic a tio n s . D evices are of m o nolithic con struction. 'c Device Type V(BR) CEO Volts Min mA	OCR Scan	MM6427 BSS52 BSS51 BSS50 BSS73 BSS72 BSS71 BC394 2N3439* MM421 HEP transistors motorola hep BSS71 MOTOROLA 2N3440 MOTOROLA BF337 transistors for uhf oscillators 2n3439 motorola	PDF
2N2222A JANTX Abstract: 2N2222A motorola HEP transistors motorola hep bc107-108-109 CV8616 2N3501 JANTX 2n3439 motorola 2N3440 MOTOROLA MM6427 Text: METAL SMALL-SIGNAL TRANSISTORS continued Darlington Transistors These transisto rs are ch a ra c te rize d for very high g ain and input im ped an ce a p p lic a tio n s . D evices are of m o nolithic con struction. 'c Device Type V(BR) CEO Volts Min mA	OCR Scan	MM6427 BSS52 BSS51 BSS50 2N5229 2N1613 2N2369 2N3440 2N1711 2N2369A 2N2222A JANTX 2N2222A motorola HEP transistors motorola hep bc107-108-109 CV8616 2N3501 JANTX 2n3439 motorola 2N3440 MOTOROLA	PDF

BSS71 MOTOROLA Search Results

BSS71 MOTOROLA Result Highlights (2)

BSS71 MOTOROLA Datasheets Context Search

BSS71 MOTOROLA

BC237

2N16

2n2222 h 331 transistors

BC237

BC237

BC237

2N643

BC237

BC237

MMBF4856

2n3819 replacement

MIL-STD-750 method 1037

BC237

mpsa63 replace

SOT23 JEDEC standard orientation pad size

BC237

motorola JFET 2N3819

transistor equivalent CT 2n5551

BC237

BC237

BSS71 MOTOROLA

HEP transistors

2N2222A JANTX