Contextual Info: Supertex inc. VN0300 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON Order Number / Package I d (ON) b v dgs (max) (min) TO-92 30V 1.2& 1.0A VN0300L Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows

VN0300

Abstract: VN0300B VN0300L
Contextual Info: VN0300 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-39 TO-92 30V 1.2Ω 1.0A VN0300B VN0300L Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows

Contextual Info: TN0201L/0401L, VN0300L/M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30 1.2 @ VGS = 10 V

Contextual Info: ^ Supertex inc. V N 0300 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices / Order Number / Package R d s ON ' d (ON) b v dgs (max) (min) TO-39 TO-92 30V 1.2£2 2.0A VN0300B VN0300L B V 0ss High Reliability Devices

Contextual Info: Tem ic siliC0Dl>_ TN0201L/0401L, VN0300L/M N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt N um ber '' BR DSS M in (V) r DS(on) M ax (£2) y<3S(th) (V) I d (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V

VN0300L

Abstract: tmos fet TO226AA
Contextual Info: VN0300L* MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Vd SS 60 V Drain-Gate Voltage Vd GR SO V Gate-Source Voltage — Continuous — Non-repetitive tD S 50 /¿s Vg S Vg s M ±20 ±40 Vdc Vpk Rating Continuous Drain Current Pulsed Drain Current

VN0300

Abstract: VN0300L
Contextual Info: VN0300 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package 30V 1.2Ω 1.0A VN0300L TO-92 Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

0401L

Abstract: TN0201L TN0401L VN0300L VN0300LS tn0201l siliconix
Contextual Info: TN0201L/0401L, VN0300L/LS Vishay Siliconix N-Channel 20-, 30-, 40-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30

TN0201L

Abstract: TN0401L VN0300L VN0300M
Contextual Info: TN0201L/0401L, VN0300L/M Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30 1.2 @ VGS = 10 V

vn0300

Abstract: VN0300L VNDQ03
Contextual Info: VN0300 SERIES N-Channel Enhancement-Mode MOS Transistors TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V (B R |D S S VN0300L VN0300M >D " s r (A) PACKAGE 30 1.2 0.64 TO-92 30 1.2 0.67 TO-237 1 SOURCE 2 GATE 3 DRAIN BOTTOM VIEW TO-237 Performance Curves: VNDQ03

VN46AFD

Abstract: VNDQ1 vnd02 TD1001 VN46AF
Contextual Info: m95SË VNDQ SERIES DIE N-Channel Enhancement-Mode MOS Transistors PART NUM BER V BR DSS (V) r DS(ON) VNDQ1CHP 30 1.2 VNDQ2CHP 60 1.8 (A) • • • • • TN0201L, TN0401L VN0300L, VN0300M VQ1001J/P (VNDQ03 x 4) TD1001Y (VNDQ03 x 2) TQ1001J (VNDQ03 x 4)

vn0300

Abstract: TA 7159
Contextual Info: Supertex Inc. VN0300 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S ON b tO N ) BVuos (max) (min) TO-92 30V i.2 n 1.0A VN0300L Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows

VNDQ1CHP

Abstract: VN0300M VNDQ1 VN0300 VNDQ03 TN0201L TN0401L VN0300L VQ1001J VQ1001P
Contextual Info: ^CX Siliconix VN0300 SERIES N-Channel Enhancement-Mode MOS Transistors -AmM incorporated TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V(BR)DSS (V) rDS(ON) (Ù) •d (A) PACKAGE VN0300L 30 1.2 0.64 TO-92 VN0300M 30 1.2 0.67 TO-237 1 SOURCE 2 GATE

VN0300

Abstract: VN0300L
Contextual Info: VN0300 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package 30V 1.2Ω 1.0A VN0300L TO-92 Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows

25Q10

Contextual Info: TN0201 L/0401 L, VN0300L/LS Vishay Siliconix N-Channel 20-, 30-, 40-V D-S MOSFETs PRODUCT SUMMARY Part Number V GS{«h)(V) b (A) TN0201L 20 1.2 @ V qs = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ V qs = 10 V 0.5 to 2 0.64 VN0300L 30 1.2 @ VGS= 10 V 0.8 to 2.5 0.64

Contextual Info: ^ Supertex inc. VN0300 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVoss / R DS ON *D(ON) b v dgs (max) (min) TO-39 TO-92 30V 1.2Q 1.0A VN0300B VN0300L Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows

Contextual Info: .BlSSSte VNDQ03 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE DEVICE Single TO-92 TO-226AA • VN0300L, TN0201L, TN0401L Single TO-237 • VN0300M Single 14-Pln Plastic • VQ1001J Quad 14-Pln Dual-ln-Une • VQ1001P Quad Chip • Available as VNDQ1CHP

motorola diodes

Abstract: motorola diode device data VN0300L
Contextual Info: MOTOROLA Order this document by VN0300L/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0300L 3 DRAIN Motorola Preferred Device 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 V Drain – Gate Voltage

BC237

Abstract: Fet BF245
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0300L 3 DRAIN Motorola Preferred Device 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 V Drain – Gate Voltage VDGR 60 V

VN0300M

Abstract: TN0201L TN0401L VN0300L
Contextual Info: TN0201L/0401L, VN0300L/M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30 1.2 @ VGS = 10 V

VN0300L

Abstract: VN0300LRLRA VN0300LRLRE
Contextual Info: VN0300L Preferred Device Small Signal MOSFET 200 mAmps, 60 Volts N–Channel TO–92 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Source Voltage VDSS 60 V Drain–Gate Voltage VDGR 60 V Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 µs

TN0201L

Contextual Info: TN0201L/0401L, VN0300L/LS Vishay Siliconix N-Channel 20-, 30-, 40-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30

VN0300M

Abstract: 1256C
Contextual Info: TN0201L/0401L, VN0300L/M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDSion) Max (Q) TN0201L TN0401L VN0300L VN0300M 20 40 30 30 1.2 @ VGs = 10 V 1.2 @ VGs = 10 V 1.2 @ VGs = 10 V 1.2 @ V g s = 10 V Features Benefits

Contextual Info: Temic Siliconix_TN0201L/0401L, VN0300L/M N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Mín (V) r DS(on) Max (Q) VGS(th) Id (A) (V) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64