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    BSQ113G Search Results

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    NDS9435

    Abstract: NDS9945 NDS9410 NDS9430 NDS9400 NDS9405 NDS9407 NDS9947 NDS9948 NDS9955
    Text: D M fte c E T c / *• T> m bäE Power M OSFETS continued bSQ113G 003^4^3 OOT « N S C 5 SOIC-8 Dual/Single DMOS soice 81 NChannel NATL SEfllCOND rOS(on) (Volts) Min Device VGS= 10V Ves = 4.5V (DISCRETE) 1 •o Po (A) Max (Watts) Max Configuration Pin Out


    OCR Scan     		PDF bSQ113Q NDS9410* NDS9945 NDS9955 NDS9956 NDS9400* NDS9405* NDS9407* NDS9430* NDS9435* NDS9435 NDS9410 NDS9430 NDS9400 NDS9405 NDS9407 NDS9947 NDS9948

    T0236

    Abstract: to236 2N2222A
    Text: bßE T> m bSQ113G CHM * N S C S NATL SEniCOND DISCRETE Devices VcEO(sust) (Volts) Min NPN 60 50 *01» PNP mA Min mA VcE{sat) lc 4 Ig (Volts) Max mA *T (MHz) mA Min P D(Amb| Package (mW) @25°C 45 100 150 40 150 0.4 150 15 200 TO-39 600 2N2905A 45 100 150


    OCR Scan     		PDF bSQ113G 2N2904A 2N2905A 2N2907A MMBT2907A PN2907A PN3645 TN2905A O-236* T0-92 T0236 to236 2N2222A

    DIODE 3L2

    Abstract: Complementary MOSFET Half Bridge
    Text: e? National February 1996 Semiconductor' NPS8852H Complementary MOSFET Half Bridge Features General Description These Complementary M O SFE T half bridge devices are produced using National's proprietary, high cell density, D M O S technology. This very high density process is especially tailored to


    OCR Scan     		PDF NPS8852H b5D113Q DIODE 3L2 Complementary MOSFET Half Bridge