BSC TRANSISTORS Search Results

BSC TRANSISTORS Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

BSC TRANSISTORS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N2221A Abstract: 2N2222A Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221A 2N2222A TO-18 Boca Semiconductor Corp. BSC http://www.bocasemi.com	Original	2N2221A 2N2222A 2N2221A 25deg C-120 2N2222A	PDF
2N2904A Abstract: 2N2905A 2N2905A india Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904A 2N2905A TO-39 Boca Semiconductor Corp. BSC http://www.bocasemi.com	Original	2N2904A 2N2905A 2N2904A, 25deg gm/500 2N2904A 2N2905A 2N2905A india	PDF
2N5680 Abstract: 2N5679 2N5681 2N5682 PNP TO-39 Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 Boca Semiconductor Corp. BSC 2N5681 2N5682	Original	2N5679 2N5680 2N5681 2N5682 25deg gm/500 2N5680 2N5679 2N5681 2N5682 PNP TO-39	PDF
2N6716 Abstract: 2N6714 2N6715 2n6715 datasheet 6716 Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer 2N6714 2N6715 2N6716 TO-237 Plastic Package Boca Semiconductor Corp. BSC http://www.bocasemi.com NPN SILICON PLANAR EPITAXIAL TRANSISTORS	Original	2N6714 2N6715 2N6716 O-237 250mA, 2N6716 2N6714 2N6715 2n6715 datasheet 6716	PDF
2N2218A Abstract: 2N2219A 2N2218A-2N2219A Text: IS/ISO 9002 IS / IECQC 700000 Lic# QSC/L- 000019.2 IS / IECQC 750100 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2218A 2N2219A TO-39 Boca Semiconductor Corp. BSC Switching And Linear Application DC And VHF Amplifier Applications	Original	2N2218A 2N2219A 2N2218A 25deg C-120 2N2219A 2N2218A-2N2219A	PDF
2N2218A Abstract: 2N2219A CDIL 2N2219A Text: IS/ISO 9002 IS / IECQC 700000 Lic# QSC/L- 000019.2 IS / IECQC 750100 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2218A 2N2219A TO-39 Boca Semiconductor Corp. BSC Switching And Linear Application DC And VHF Amplifier Applications	Original	2N2218A 2N2219A 2N2218A 25deg C-120 2N2219A CDIL 2N2219A	PDF
2N2907A Abstract: 2N2906A 2N2907A TO-18 Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906A 2N2907A TO-18 Boca Semiconductor Corp. BSC Switching And Linear Application DC to VHF Amplifier Applications	Original	2N2906A 2N2907A 2N2906A, 25deg 2N2907A 2N2906A 2N2907A TO-18	PDF
2N2484 Abstract: No abstract text available Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N2484 TO-18 Boca Semiconductor Corp BSC This transistors is primarily intended for use in high performance, low level,	Original	2N2484 C-120 2N2484	PDF
2N6282 Abstract: 2N6284 2N6285 2N6287 2N6283 2N6286 30yA Text: DARLINGTON COMPLEMETARY SILICON POWER TRANSISTORS .designed for use general-purpose Amplifier and low -frequency switching applications. Boca Semiconductor Corp BSC http://www.bocasemi.com FEATURES * High DC Current Gain@lc= 10A hFE= 2400 Typ - 2N6282,2N6283,2N6284	OCR Scan	2N6282 2N6283 2N6284 2N6286 2N6287 -2N6282 2N6285 -2N6283 2N6286 -2N6284 2N6284 2N6285 2N6287 30yA	PDF
D243C Abstract: BD243 B0243C BD243A B0243 B0244A BD243B BD243C BD244 BD244A Text: COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS . designed for use in general purpose power amplifier and switching applications. FEATURES: Boca Semiconductor Corp. * Coilector-Emitter Sustaining Voltage VCeo « ,= 45V(Min - BD243.BD244 BSC 60V(Min)- BD243A.BD244A	OCR Scan	BD243 BD244 BD243A BD244A BD243B BD244B D243C, D244C 500mA D243C B0243C B0243 B0244A BD243C BD244	PDF
2N6045 Abstract: 2N6041 2N6042 N6043 2N6040 2N6045 NPN POWER DARLINGTON 2N6043 2N6044 A-2N6040 N6040 Text: DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS .designed for general-purpose amplifier and low-speed switching applications FEATURES: Boca Semicondcutor Corp. BSC * Collector-Emitter Sustaining VoltageVCEo(sus) = 60 V (Min) - 2N6040 , 2N6043 = 80 V (Min) - 2N6041 , 2N6044	OCR Scan	2N6040 2N6043 2N6041 2N6044 2N6042 2N6045 -2N6040, 2N6043 -2N6042, 2N6045 2N6041 2N6042 N6043 2N6040 2N6045 NPN POWER DARLINGTON 2N6044 A-2N6040 N6040	PDF
b0241b Abstract: BD241B VCS-60V B0241C BD241 BD241A BD241C BD242 BD242A BD242B Text: COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS . designed for use in general purpose power amplifier and switching applications. FEATURES: Boca Semiconductor Corp. * Collector-Emitter Sustaining Voltage BSC V ceo «.»= 45V(Min - BD241.BD242 60V(Min)- BD241A.BD242A	OCR Scan	BD241 BD242 BD241A BD242A BD241B BD242B BD241C BD242C 500mA b0241b VCS-60V B0241C BD242	PDF
2N6497 Abstract: N6497 2N6498 2N6499 Text: HIGH VOLTAGE NPN SILICON POWER TRANSISTORS NPN 2N6497 2N6498 2N6499 . designed for high voltage inverters,switching regulators and line operated amplifier applications. Boca Semiconductor Corp. BSC FEATURES: * Collector-Emitter Sustaining VoltageVCE0(SUS) = 250 V (Min)-2N6497	OCR Scan	-2N6497 -2N6498 -2N6499 2N6497 2N6498 2N6499 2N6499 2N6497, N6497	PDF
2n3055 Abstract: MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier 2N3055 curve npn 2n3055 2n3055 collector characteristic curve 2N3055/MJ2955 MJ2955 MJ2955 TRANSISTOR Text: COMPLEMENTARY SILICON POWER TRANSISTORS NPN 2N3055 .designed for use in general-purpose amplifier and switching applications PNP MJ2955 Boca Semiconductor Corp. BSC FEATURES: * Power Dissipation - PD = 115W @ Tc = 25°C * DC Current Gain hFE = 20 ~ 70 @ lc = 4.0 A	OCR Scan	2N3055 MJ2955 MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier 2N3055 curve npn 2n3055 2n3055 collector characteristic curve 2N3055/MJ2955 MJ2955 MJ2955 TRANSISTOR	PDF

BUX84 Abstract: BUX85 2S H25 Text: SWITCHMODE SERIES NPN POWER TRANSISTORS . designed for use in high-voltage,high-speed,power switching regulators,converters,inverters,motor control system application. NPN BUX84 Boca Semiconductor Corp. BSC FEATURES: BUX85 *Coilector-Emitter Sustaining Voltagev ceo 8US = 400 V (Min) -BUX84	OCR Scan	BUX84 BUX85 BUX84 BUX85 Tcx125 30ityp) 2S H25	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
2N6315 Abstract: 2N6316 2N6317 2N6318 Text: COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS . designed for general-purpose power amplifier and application. Boca Semiconductor Corp. BSC * Low Collector-Emitter Saturation Voltage http://www.bocasemi.com FEATURES: v c e <s a t ) = 1 0 v ( M » c ) @ >c = 4 - 0 A	OCR Scan	2N6315 2N6317 2N6316 2N6318 2NS318 2N6318	PDF
2N5880 Abstract: 2N5882 2N5879 2N5881 Scans-00155740 Text: COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS General-Purpose Power Amplifier and Switching Applications FEATURES: NPN 2N5881 2N5882 PNP 2N5879 2N5880 _ Boca Semiconductor Corp. BSC http ://www.bocasemi.com * Low Collector-Emitter Saturation Voltage v c e \| s a t = 1-0V Max.)@lc=7.0A	OCR Scan	2N5879 2N5881 2N5880 2N5882 2N5881 2N5882 Scans-00155740	PDF
Untitled Abstract: No abstract text available Text: IUI ËFFi llll BDS20 BDS21 SEME LAB SILICON EPITAXIAL BASE COMPLEMENTARY DARLINGTON POWER TRANSISTORS IN T0220 PACKAGE MECHANICAL DATA Dimensions in mm 4.6 10.6 BDS20SM BDS21SM 0.8 FEATURES • HERMETIC T0220 METAL OR CERAMIC PACKAGES • 1.0 2.70 BSC • HIGH RELIABILITY	OCR Scan	BDS20 BDS21 T0220 BDS20SM BDS21SM T0220M T0220SM	PDF
K1118 Abstract: 2N3902 K 2056 transistor Text: Boca Semiconductor Corp. 2N3902 BSC 3.5 AMPERE POWER TRANSISTORS NPN SILICON HIGH VOLTAGE NPN SILICON TRANSISTORS 4 0 0 1V O L T S 100 W ATTS . . . designed fo r use in high-voltage inverters, converters, switching regulators and line operated amplifiers^	OCR Scan	2N3902 10-COLLECTOR K1118 2N3902 K 2056 transistor	PDF
2N2646 Abstract: Unijunction transistor 2N2646 of 2N2646 transistor 2N2647 2N2646 CIRCUIT SCR 2N2646 transistor 2n2647 transistor 2n2646 2N2646 Vp 2n2646 2n2647 Text: Boca Semiconductor Corp. BSC P N U nijunction T ran sistors Silicon PN Unijunction Transistors 2N2646 2N2647 . designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. These devices feature: • Low Peak Point Current — 2/xA (Max)	OCR Scan	2N2646 2N2647 2A-01 Unijunction transistor 2N2646 of 2N2646 transistor 2N2647 2N2646 CIRCUIT SCR 2N2646 transistor 2n2647 transistor 2n2646 2N2646 Vp 2n2646 2n2647	PDF
2N3741 Abstract: 2N3740 Text: MEDIUM-POWER PNP TRANSISTORS PNP 2N3740 2N3741 .ideal for use as drivers, switches and medium- power amplifier and applications FEATURES: * Low Collector-Emitter Saturation Voltage - Boca Semiconductor Corp. BSC http ://www.bocasemi.com V CE SAT = 0 -6 V ( M a X ) @ l C= 1 0 A	OCR Scan	250mA 2N3740 2N3741 2N3741	PDF
2N3441 Abstract: No abstract text available Text: NPN SILICON POWER TRANSISTOR NPN 2N3441 .2N3441 transistor is designed for use in general purpose switching and linear amplifier application requiring high breakdown voltages. FEATURES * * * * Boca Semiconductor Corp. BSC http ://www.bocasemi.com Driver for High Power Outputs	OCR Scan	2N3441 20CPC,	PDF
2N3772 Abstract: 2N3771 2N3772 APPLICATIONS S200 2N3771 power transistor transistor 2n3772 Text: HIGH POWER NPN SILICON POWER TRANSISTORS NPN 2N3771 2N3772 General-purpose linear amplifiers,series pass regulatorsand inductive switching Applications. Boca Semiconductor Corp. BSC fe a tu re s * Low Coliector-Emitter Saturation Voltagev ce<sat = 4 0 v M ax) @ lc = 30 A. >b = 6 0 A “ 2N3771	OCR Scan	2n3771 2n3772 2N3772 Current-C771, 2N3772 APPLICATIONS S200 2N3771 power transistor transistor 2n3772	PDF

BSC TRANSISTORS Search Results

BSC TRANSISTORS Result Highlights (5)

BSC TRANSISTORS Datasheets Context Search

2N2221A

2N2904A

2N5680

2N6716

2N2218A

2N2218A

2N2907A

2N2484

2N6282

D243C

2N6045

b0241b

2N6497

2n3055

BUX84

y51 h 120c

2N6315

2N5880

Untitled

K1118

2N2646

2N3741

2N3441

2N3772