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    BSC TRANSISTORS Search Results

    BSC TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BSC TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2221A

    Abstract: 2N2222A
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221A 2N2222A TO-18 Boca Semiconductor Corp. BSC http://www.bocasemi.com


    Original     		PDF 2N2221A 2N2222A 2N2221A 25deg C-120 2N2222A

    2N2904A

    Abstract: 2N2905A 2N2905A india
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904A 2N2905A TO-39 Boca Semiconductor Corp. BSC http://www.bocasemi.com


    Original     		PDF 2N2904A 2N2905A 2N2904A, 25deg gm/500 2N2904A 2N2905A 2N2905A india

    2N5680

    Abstract: 2N5679 2N5681 2N5682 PNP TO-39
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 Boca Semiconductor Corp. BSC 2N5681 2N5682


    Original     		PDF 2N5679 2N5680 2N5681 2N5682 25deg gm/500 2N5680 2N5679 2N5681 2N5682 PNP TO-39

    2N6716

    Abstract: 2N6714 2N6715 2n6715 datasheet 6716
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer 2N6714 2N6715 2N6716 TO-237 Plastic Package Boca Semiconductor Corp. BSC http://www.bocasemi.com NPN SILICON PLANAR EPITAXIAL TRANSISTORS


    Original     		PDF 2N6714 2N6715 2N6716 O-237 250mA, 2N6716 2N6714 2N6715 2n6715 datasheet 6716

    2N2218A

    Abstract: 2N2219A 2N2218A-2N2219A
    Text: IS/ISO 9002 IS / IECQC 700000 Lic# QSC/L- 000019.2 IS / IECQC 750100 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2218A 2N2219A TO-39 Boca Semiconductor Corp. BSC Switching And Linear Application DC And VHF Amplifier Applications


    Original     		PDF 2N2218A 2N2219A 2N2218A 25deg C-120 2N2219A 2N2218A-2N2219A

    2N2218A

    Abstract: 2N2219A CDIL 2N2219A
    Text: IS/ISO 9002 IS / IECQC 700000 Lic# QSC/L- 000019.2 IS / IECQC 750100 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2218A 2N2219A TO-39 Boca Semiconductor Corp. BSC Switching And Linear Application DC And VHF Amplifier Applications


    Original     		PDF 2N2218A 2N2219A 2N2218A 25deg C-120 2N2219A CDIL 2N2219A

    2N2907A

    Abstract: 2N2906A 2N2907A TO-18
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906A 2N2907A TO-18 Boca Semiconductor Corp. BSC Switching And Linear Application DC to VHF Amplifier Applications


    Original     		PDF 2N2906A 2N2907A 2N2906A, 25deg 2N2907A 2N2906A 2N2907A TO-18

    2N2484

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N2484 TO-18 Boca Semiconductor Corp BSC This transistors is primarily intended for use in high performance, low level,


    Original     		PDF 2N2484 C-120 2N2484

    2N6282

    Abstract: 2N6284 2N6285 2N6287 2N6283 2N6286 30yA
    Text: DARLINGTON COMPLEMETARY SILICON POWER TRANSISTORS .designed for use general-purpose Amplifier and low -frequency switching applications. Boca Semiconductor Corp BSC http://www.bocasemi.com FEATURES * High DC Current Gain@lc= 10A hFE= 2400 Typ - 2N6282,2N6283,2N6284


    OCR Scan     		PDF 2N6282 2N6283 2N6284 2N6286 2N6287 -2N6282 2N6285 -2N6283 2N6286 -2N6284 2N6284 2N6285 2N6287 30yA

    D243C

    Abstract: BD243 B0243C BD243A B0243 B0244A BD243B BD243C BD244 BD244A
    Text: COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS . designed for use in general purpose power amplifier and switching applications. FEATURES: Boca Semiconductor Corp. * Coilector-Emitter Sustaining Voltage VCeo « ,= 45V(Min - BD243.BD244 BSC 60V(Min)- BD243A.BD244A


    OCR Scan     		PDF BD243 BD244 BD243A BD244A BD243B BD244B D243C, D244C 500mA D243C B0243C B0243 B0244A BD243C BD244

    2N6045

    Abstract: 2N6041 2N6042 N6043 2N6040 2N6045 NPN POWER DARLINGTON 2N6043 2N6044 A-2N6040 N6040
    Text: DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS .designed for general-purpose amplifier and low-speed switching applications FEATURES: Boca Semicondcutor Corp. BSC * Collector-Emitter Sustaining VoltageVCEo(sus) = 60 V (Min) - 2N6040 , 2N6043 = 80 V (Min) - 2N6041 , 2N6044


    OCR Scan     		PDF 2N6040 2N6043 2N6041 2N6044 2N6042 2N6045 -2N6040, 2N6043 -2N6042, 2N6045 2N6041 2N6042 N6043 2N6040 2N6045 NPN POWER DARLINGTON 2N6044 A-2N6040 N6040

    b0241b

    Abstract: BD241B VCS-60V B0241C BD241 BD241A BD241C BD242 BD242A BD242B
    Text: COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS . designed for use in general purpose power amplifier and switching applications. FEATURES: Boca Semiconductor Corp. * Collector-Emitter Sustaining Voltage BSC V ceo «.»= 45V(Min - BD241.BD242 60V(Min)- BD241A.BD242A


    OCR Scan     		PDF BD241 BD242 BD241A BD242A BD241B BD242B BD241C BD242C 500mA b0241b VCS-60V B0241C BD242

    2N6497

    Abstract: N6497 2N6498 2N6499
    Text: HIGH VOLTAGE NPN SILICON POWER TRANSISTORS NPN 2N6497 2N6498 2N6499 . designed for high voltage inverters,switching regulators and line operated amplifier applications. Boca Semiconductor Corp. BSC FEATURES: * Collector-Emitter Sustaining VoltageVCE0(SUS) = 250 V (Min)-2N6497


    OCR Scan     		PDF -2N6497 -2N6498 -2N6499 2N6497 2N6498 2N6499 2N6499 2N6497, N6497

    2n3055

    Abstract: MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier 2N3055 curve npn 2n3055 2n3055 collector characteristic curve 2N3055/MJ2955 MJ2955 MJ2955 TRANSISTOR
    Text: COMPLEMENTARY SILICON POWER TRANSISTORS NPN 2N3055 .designed for use in general-purpose amplifier and switching applications PNP MJ2955 Boca Semiconductor Corp. BSC FEATURES: * Power Dissipation - PD = 115W @ Tc = 25°C * DC Current Gain hFE = 20 ~ 70 @ lc = 4.0 A


    OCR Scan     		PDF 2N3055 MJ2955 MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier 2N3055 curve npn 2n3055 2n3055 collector characteristic curve 2N3055/MJ2955 MJ2955 MJ2955 TRANSISTOR

    BUX84

    Abstract: BUX85 2S H25
    Text: SWITCHMODE SERIES NPN POWER TRANSISTORS . designed for use in high-voltage,high-speed,power switching regulators,converters,inverters,motor control system application. NPN BUX84 Boca Semiconductor Corp. BSC FEATURES: BUX85 *Coilector-Emitter Sustaining Voltagev ceo 8US = 400 V (Min) -BUX84


    OCR Scan     		PDF BUX84 BUX85 BUX84 BUX85 Tcx125 30ityp) 2S H25

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2N6315

    Abstract: 2N6316 2N6317 2N6318
    Text: COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS . designed for general-purpose power amplifier and application. Boca Semiconductor Corp. BSC * Low Collector-Emitter Saturation Voltage http://www.bocasemi.com FEATURES: v c e <s a t ) = 1 0 v ( M » c ) @ >c = 4 - 0 A


    OCR Scan     		PDF 2N6315 2N6317 2N6316 2N6318 2NS318 2N6318

    2N5880

    Abstract: 2N5882 2N5879 2N5881 Scans-00155740
    Text: COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS General-Purpose Power Amplifier and Switching Applications FEATURES: NPN 2N5881 2N5882 PNP 2N5879 2N5880 _ Boca Semiconductor Corp. BSC http ://www.bocasemi.com * Low Collector-Emitter Saturation Voltage v c e | s a t = 1-0V Max.)@lc=7.0A


    OCR Scan     		PDF 2N5879 2N5881 2N5880 2N5882 2N5881 2N5882 Scans-00155740

    Untitled

    Abstract: No abstract text available
    Text: IUI ËFFi llll BDS20 BDS21 SEME LAB SILICON EPITAXIAL BASE COMPLEMENTARY DARLINGTON POWER TRANSISTORS IN T0220 PACKAGE MECHANICAL DATA Dimensions in mm 4.6 10.6 BDS20SM BDS21SM 0.8 FEATURES • HERMETIC T0220 METAL OR CERAMIC PACKAGES • 1.0 2.70 BSC • HIGH RELIABILITY


    OCR Scan     		PDF BDS20 BDS21 T0220 BDS20SM BDS21SM T0220M T0220SM

    K1118

    Abstract: 2N3902 K 2056 transistor
    Text: Boca Semiconductor Corp. 2N3902 BSC 3.5 AMPERE POWER TRANSISTORS NPN SILICON HIGH VOLTAGE NPN SILICON TRANSISTORS 4 0 0 1V O L T S 100 W ATTS . . . designed fo r use in high-voltage inverters, converters, switching regulators and line operated amplifiers^


    OCR Scan     		PDF 2N3902 10-COLLECTOR K1118 2N3902 K 2056 transistor

    2N2646

    Abstract: Unijunction transistor 2N2646 of 2N2646 transistor 2N2647 2N2646 CIRCUIT SCR 2N2646 transistor 2n2647 transistor 2n2646 2N2646 Vp 2n2646 2n2647
    Text: Boca Semiconductor Corp. BSC P N U nijunction T ran sistors Silicon PN Unijunction Transistors 2N2646 2N2647 . designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. These devices feature: • Low Peak Point Current — 2/xA (Max)


    OCR Scan     		PDF 2N2646 2N2647 2A-01 Unijunction transistor 2N2646 of 2N2646 transistor 2N2647 2N2646 CIRCUIT SCR 2N2646 transistor 2n2647 transistor 2n2646 2N2646 Vp 2n2646 2n2647

    2N3741

    Abstract: 2N3740
    Text: MEDIUM-POWER PNP TRANSISTORS PNP 2N3740 2N3741 .ideal for use as drivers, switches and medium- power amplifier and applications FEATURES: * Low Collector-Emitter Saturation Voltage - Boca Semiconductor Corp. BSC http ://www.bocasemi.com V CE SAT = 0 -6 V ( M a X ) @ l C= 1 0 A


    OCR Scan     		PDF 250mA 2N3740 2N3741 2N3741

    2N3441

    Abstract: No abstract text available
    Text: NPN SILICON POWER TRANSISTOR NPN 2N3441 .2N3441 transistor is designed for use in general purpose switching and linear amplifier application requiring high breakdown voltages. FEATURES * * * * Boca Semiconductor Corp. BSC http ://www.bocasemi.com Driver for High Power Outputs


    OCR Scan     		PDF 2N3441 20CPC,

    2N3772

    Abstract: 2N3771 2N3772 APPLICATIONS S200 2N3771 power transistor transistor 2n3772
    Text: HIGH POWER NPN SILICON POWER TRANSISTORS NPN 2N3771 2N3772 General-purpose linear amplifiers,series pass regulatorsand inductive switching Applications. Boca Semiconductor Corp. BSC fe a tu re s * Low Coliector-Emitter Saturation Voltagev ce<sat = 4 0 v M ax) @ lc = 30 A. >b = 6 0 A “ 2N3771


    OCR Scan     		PDF 2n3771 2n3772 2N3772 Current-C771, 2N3772 APPLICATIONS S200 2N3771 power transistor transistor 2n3772