BS107 MOTOROLA
Abstract: BS107A BS107
Text: MOTOROLA Order this document by BS107/D SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement BS107 BS107A 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs
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BS107/D
BS107
BS107A
226AA)
BS107 MOTOROLA
BS107A
BS107
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BS107A equivalent
Abstract: BS107 "direct replacement" BC237 BS107 BC108 characteristic
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement BS107 BS107A 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit VDS 200 Vdc VGS VGSM ± 20 ± 30 ID IDM 250 500 PD 350 mW TJ, Tstg – 55 to 150 °C Drain – Source Voltage
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BS107
BS107A
226AA)
Source218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BS107A equivalent
BS107 "direct replacement"
BC237
BC108 characteristic
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pt100 sensor interface with microcontroller
Abstract: PT100 RTD signal conditioning noise problem pt100 sensor with adc 4-20mA pt100 rtd spi pt100 interface WITH ADC maxim pt100 interface RTD SENSING CIRCUIT 4-20mA maxim 4-20ma receiver il300 national instruments piezoelectric pressure sensor
Text: Maxim > App Notes > A/D and D/A CONVERSION/SAMPLING CIRCUITS AMPLIFIER AND COMPARATOR CIRCUITS SIGNAL GENERATION CIRCUITS Keywords: 4-20mA, current loop, current loops, DAC, ADC, current DAC, isolation, 2-wire, signal conditioning, low power, D/A, industrial control, EMI, transducers, current transmission, transmitter
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4-20mA,
4-20mA
MAX535:
MAX5351:
MAX5352:
MAX5353:
MAX5354:
MAX5355:
MAX6120:
MAX6325:
pt100 sensor interface with microcontroller
PT100 RTD signal conditioning noise problem
pt100 sensor with adc 4-20mA
pt100 rtd spi
pt100 interface WITH ADC
maxim pt100 interface
RTD SENSING CIRCUIT 4-20mA
maxim 4-20ma receiver
il300
national instruments piezoelectric pressure sensor
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maxim pt100 interface
Abstract: maxim 4-20ma receiver pt100 sensor interface with microcontroller pt100 sensor interface WITH ADC pt100 2 wire sensor interface ADC signal conditioning circuit for pt100 PT100 Platinum Resistance Temperature Detector pt100 sensor with adc 4-20mA MAX1458 CNC DRIVES
Text: A/D and D/A CONVERSION/SAMPLING CIRCUITS AMPLIFIER AND COMPARATOR CIRCUITS SIGNAL GENERATION CIRCUITS Application Note 722: Dec 29, 2000 3V/5V DACs Support Intelligent Current Loop This application note explains 4-20mA current loops and intelligent transmitters and explains their need for
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4-20mA
com/an722
maxim pt100 interface
maxim 4-20ma receiver
pt100 sensor interface with microcontroller
pt100 sensor interface WITH ADC
pt100 2 wire sensor interface ADC
signal conditioning circuit for pt100
PT100 Platinum Resistance Temperature Detector
pt100 sensor with adc 4-20mA
MAX1458
CNC DRIVES
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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MMBFJ177LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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PDF
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BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
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BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3455XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
K 2056 transistor
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2N16
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF1P02ELT1
L218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N16
BC237
BCY72
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2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3442XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2n2222 h 331 transistors
2n2222 -331 transistors
2n2222 331 transistors
BC237
2n2222 h 331
MARKING CODE diode sod123 W1
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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MMBFJ175LT1
236AB)
Ga218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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PDF
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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PDF
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BC237
Abstract: MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3441XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
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MPS5771
Abstract: MPS8093 bf391 2n3819 replacement MPS3640 equivalent MPF3821 MPS6595 MAD130P BC108 characteristic 2n3819 equivalent ic
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3640 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –12 Vdc Collector – Base Voltage VCBO –12 Vdc Emitter – Base Voltage
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MPS3640
226AA)
U218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MPS5771
MPS8093
bf391
2n3819 replacement
MPS3640 equivalent
MPF3821
MPS6595
MAD130P
BC108 characteristic
2n3819 equivalent ic
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motorola l6 lcd
Abstract: BS107 MOTOROLA AY0438 AY0438/P001
Text: MOTOROLA Order this document by BS107/D SEMICONDUCTOR TECHNICAL DATA TMOS Switching N-Channel — Enhancement 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage Vd S 200 Vdc vgs ±20 +30 Vdc Vpk Gate-Source Voltage — Continuous
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OCR Scan
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BS107/D
100jiA
DS700101-page
A0cn0NH03±
motorola l6 lcd
BS107 MOTOROLA
AY0438
AY0438/P001
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N -C hannel — Enhancement BS107 BS107A 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Vd S 200 Vdc Vg s Vg SM ±20 ±30 Vdc Vpk Id 'd m 250 500 pd 350 mW T ji Tstg -5 5 to 150 °C Drain - Source Voltage
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OCR Scan
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BS107
BS107A
O-226AA)
BS107
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching BS107 BS107A N -Channel — Enhancement 1 DRAIN G ATE ' 3 SOURCE M AXIM UM R A T IN G S Rating Symbol Value Unit V DS 2 00 Vdc VGS V GSM ± 20 ± 30 Vdc Vpk 'd 'D M 250 500 PD 350 mW ^J. Ts tg - 5 5 to 150
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OCR Scan
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BS107
BS107A
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PDF
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BS107A
Abstract: BS170 MOTOROLA BS107 BS170 S140
Text: BS107,A* CASE 29-04, STYLE 30 TO-92 TO-226AA 1 Drain MAXIMUM RATINGS Rating Sym bol Value Unit Vos 200 Vdc VGS VG S M ±20 ±30 Vdc Vpk Id ¡DM 250 500 mAdc Pd 350 mW TMOS SW ITCHING - 5 5 to 150 •c N-CH ANNEL — EN H A N C EM EN T Draln-Source Voltage
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OCR Scan
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BS107
O-226AA)
BS107A
BS170 MOTOROLA
BS170
S140
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PDF
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lt 2904
Abstract: BS107 MOTOROLA
Text: BS107,A* CASE 29-04, STYLE 30 TO-92 TO-226AA M A X I M U M R A T IN G S Rating Sym bol Value Unit VDS 200 Vdc VGS vgsm ±20 ±3 0 Vdc Vpk 'd 'DM 250 500 mAdc Pd 350 mW TMOS SWITCHING TJ' Tstg - 5 5 to 150 °C N-CHANNEL — ENHANCEM ENT Drain-Source Voltage
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OCR Scan
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BS107
O-226AA)
BS107A
lt 2904
BS107 MOTOROLA
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2904S
Abstract: DS130
Text: BS107,A* C A S E 29-04, S T Y L E 30 TO-92 TO-226AA MAXIMUM RATINGS Sym bol V a lu e U n it D ra in - S o u rc e V o lta g e R atin g VDS 200 Vdc G a te - S o u rc e V o lta g e VGS r 20 Vdc Id 'd m 250 500 m Adc Pd 3 50 mW T j ' ^"stg - 5 5 to 150 PC D ra in C u rre n t
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OCR Scan
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BS107
O-226AA)
2904S
DS130
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MFE9200
Abstract: BS107 MOTOROLA BS170 MOTOROLA MPF4150 IRFF9110 IRFF9111 IRFF9112 IRFF9113 IRFF9120 IRFF9121
Text: FIELD-EFFECT TRANSISTORS continued TMOS Power MOSFETs (continued) VGS (t/h) 0n rds (on) @ ID •d s s V(BH)DSS ■g s s C |S S ^rss •on •off n Max (A) Min Max //A Max (V) Min (nA) Max (pf) Max (pf) Max (ns) Max (ns) Max IRFF9110 IRFF9111 IRFF9112 IRFF9113
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IRFF9110
IRFF9111
IRFF9112
IRFF9113
IRFF9120
IRFF9121
IRFF9122
IRFF9123
IRFF9130
IRFF9131
MFE9200
BS107 MOTOROLA
BS170 MOTOROLA
MPF4150
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Untitled
Abstract: No abstract text available
Text: M A X I M U M R A T IN G S S ym bol Value U n it D rain-S ource V o ltage R a ting VDSS 200 Vdc G ate-Source Voltage - C o ntin uous — N o n -re p e titiv e tp ^ 50 fis V GS VGSM ±20 i-4 0 Vdc Vpk D rain C urrent - C o ntin uous (1) - Pulsed (2) >D 400
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OCR Scan
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BS107
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MFE9200
Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com
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DK101/D.
O-22QI
0020-H
MFE9200
BUZ84A
BUZ90 equivalent
IRF150 MOSFET AMP circuit
BUZ35S
MTP40N06M
IRFZ22 mosfet
1RF620
MTM12N10L
MTP25N10E
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1RFZ40
Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
Text: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained
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OCR Scan
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DK101/D.
0020-frJ
1RFZ40
1RF150
MTP25N10E
mth7n50 Transistor
MTP35N06E
BUZ80a equivalent
buz90 equivalent
MTP40N06M
MFE9200
MTH7N50
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