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    Part ECAD Model Manufacturer Description Download Buy
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

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    2SC2668-Y

    Abstract: 2SC2668
    Text: TOSHIBA 2SC2668 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2668 HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS. • Sm all Reverse Transfer Capacitance • Low Noise Figure : U nit in mm Cre = 0.70pF (Typ.)


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    PDF 2SC2668 2SC2668-Y 2SC2668

    2SC2668

    Abstract: 2SC2668Y vqb 27
    Text: TOSHIBA 2SC2668 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2668 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS. 4.2 M AX. • • Small Reverse Transfer Capacitance : Cre = 0.70pF (Typ.)


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    PDF 2SC2668 2SC2668 2SC2668Y vqb 27

    Untitled

    Abstract: No abstract text available
    Text: WAY 1 0 JSJ3 VME 1210/1220 June 1990 Slot 1 and Non-Slot 1 VMEbus Master Controllers Distinctive Features_ • VME 1210 provides two device chip set for slot 1 master bus controller and single level arbiter • VME 1220 provides two device chip set for non-slot 1


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    PDF 1210/12duct 24-Lead 28-Pin DGD02S2 24-Pin 10TYP

    VME bus controller

    Abstract: PLD VME VME bus arbitration 1210a vme bus specification 1210B vme case 1210 LCC
    Text: VME 1210/20 Slot 1 and Non-Slot 1 VMEbus Master Controllers March 1989 Distinctive Features. * VME 1210 provides two device chip set for slot 1 master bus controller and single level arbiter * VME 1220 provides two device chip set for non-slot 1 master bus controller


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    VME DAISY CHAIN

    Abstract: No abstract text available
    Text: VME 1210/20 Slot 1 and Non-Slot 1 VMEbus Master Controllers March 1989 Applications-* VMEbus masters residing in slot 1 boards VME 1210 * VMEbus masters residing in non-slot 1 boards (VME 1220) Distinctive Features_


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    PDF 1210B VME DAISY CHAIN

    VME bus controller

    Abstract: VME DAISY CHAIN dhbd E1200 VME1200 VME controller single bus master CPU DSP
    Text: Ä X -* V M E 1200 VMEbus Master Controller with System Arbiter T • C H M O L November 1988 Distinctive Features. Applications_ • • Two device chip set contains: - Bus requester - Single level system arbiter - VMEbus controller


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    PDF VME1200 448IN VME bus controller VME DAISY CHAIN dhbd E1200 VME1200 VME controller single bus master CPU DSP

    Untitled

    Abstract: No abstract text available
    Text: VM E1200 t% c h m o l o o v ^ VMEbus Master Controller with System Arbiter November 1988 Applications. Distinctive Features. • VMEbus master and system controller residing in slot 1 • Other VMEbus masters (residing in other slots) Two device chip set contains:


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    PDF E1200

    Untitled

    Abstract: No abstract text available
    Text: VME 1210/1220 A 3 L May 1989 Slot 1 and Non-Slot 1 VMEbus Master Controllers Distinctive Features_ • VME 1210 provides two device chip set for slot 1 master bus controller and single level arbiter Applications_


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    PDF pro15-17,

    EU100

    Abstract: 2SC2668-Y 2SC2668 QE RB 29
    Text: TO SH IBA TOSHIBA TRANSISTOR 2SC2668 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2668 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS 4 .2 M A X . • • Small Reverse Transfer Capacitance : Cre = 0.70 pF (Typ.)


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    PDF 2SC2668 55MAX. EU100 2SC2668-Y 2SC2668 QE RB 29

    74S245

    Abstract: pin configuration 74LS32 74LS32 pin configuration 74LS764
    Text: SCB68175 Signetics Bus Controller Preliminary Specification Microprocessor Products PIN CONFIGURATION DESCRIPTION FEATURES The Signetics SCB68175/8X821 Bus Controller is a high-speed bus requester and timing generator designed to inter­ face a local m aster typically, a m icro­


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    PDF SCB68175 SCB68175/8X821 SCB68175/8X 74S245 pin configuration 74LS32 74LS32 pin configuration 74LS764

    Untitled

    Abstract: No abstract text available
    Text: 2SC2714 Fig- N F, GPe TEST CIRCUIT y PARAMETER Typ. (1) COMMON EMITTER (VCE = 6V, lE = -1 m A , f = 100MHz) CHARACTERISTIC Input Conductance Input Capacitance Reverse Transfer Admittance Phase Angle of Reverse Transfer Adimttance Forward Transfer Admittance


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    PDF 2SC2714 100MHz)

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC2668 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2668 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS. • • Small Reverse Transfer Capacitance : Cre = 0.70pF (Typ.) Low Noise Figure


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    PDF 2SC2668

    KZL 140 C

    Abstract: 2SC2715
    Text: 2SC2715 SILICON NPN EPITAXIAL PLANAR TYPE U nit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. + Oil Û255 1.5— FEATURES: High Power Gain : Gpe = 2dB Typ. (f = 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage. dd +1 HO EE- -e dci +1 M A X IM U M RATINGS (Ta = 25°C)


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    PDF 2SC2715 KZL 140 C 2SC2715

    2SC2715

    Abstract: No abstract text available
    Text: 2SC2715 SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in HIGH FREQUENCY AMPLIFIER APPLICATIONS. FEATURES : High Power Gain : Gpe = 2dB Typ. (f= 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage. CE­ C IM A X IM U M RATINGS (Ta = 25°C)


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    PDF 2SC2715 SC-59 2SC2715

    2SC2669

    Abstract: 2SC2669-0 2SC2669-R 2SC2669-Y
    Text: TOSHIBA 2SC2669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2669 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • High Power Gain : Gpe = 30dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV, IF Stage. 4.2MAX.


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    PDF 2SC2669 55MAX. 2SC2669 2SC2669-0 2SC2669-R 2SC2669-Y

    2SC2715

    Abstract: No abstract text available
    Text: 2SC2715 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 HIGH FREQUENCY AMPLIFIER APPLICATIONS. + 0.5 2 .5 - I1 3 + 0 .2 5 1 .5 - Q .l 5 FEATURES : • High Power Gain : Gpe = 2dB (Typ.) (f = 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage.


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    PDF 2SC2715 SC-59 2SC2715

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2715 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS n r WÊF 7 7 m i m s wmr HIGH FREQUENCY AM PLIFIER APPLICATIONS. U n it in mm + CL5 2.5-CI3 + 0 .2 5 1.5 - a i 5 FEA TU RES : H igh Pow er G ain • t— EE- : Gpe = 2dB (Typ.) (f= 10.7M H z)


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    PDF 2SC2715

    2SC2669

    Abstract: 2SC2669-0 2SC2669-R 2SC2669-Y
    Text: TOSHIBA 2SC2669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2669 Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. 4.2 MAX. High Power Gain : Gpe = 30dB (Typ.) (f= 10.7MHz) Recommended for FM IF, OSC Stage and AM CONV, IF Stage.


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    PDF 2SC2669 2SC2669 2SC2669-0 2SC2669-R 2SC2669-Y

    102 SE

    Abstract: No abstract text available
    Text: 2SC271 4 SIÜCQN NPN EPITAXIAL PLANAR TYPE t r a n s is t o r U nit in mm HIG H FREQUENCY A M P LIF IE R A PP LIC A T IO N S . FM , RF, M IX , IF A M P LIF IE R A PP LIC A T IO N S . FEATURES : • Small Reverse Transfer Capacitance: Cre = 0.7pF Typ. NF = 2.5dB (Typ.) ( f - 100MHz)


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    PDF 2SC271 100MHz) SC-59 eight2SC2714 2SC2714 102 SE

    2SC380TM

    Abstract: CIET 2SC380TM-R 2SC380TM-Y
    Text: TOSHIBA 2SC380TM TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC380TM Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. High Power Gain : Gpe = 29dB (Typ.) (f = 10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage. • MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SC380TM SC-43 2SC380TM CIET 2SC380TM-R 2SC380TM-Y

    2SC2715

    Abstract: TRANSISTOR MARKING FA
    Text: 2SC2715 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • + 0.5 2.5-0.3 + 0.25 High Power Gain : Gpe = 2dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage.


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    PDF 2SC2715 SC-59 2SC2715 TRANSISTOR MARKING FA

    intel 82258

    Abstract: 82258 ulm 2003 logical block diagram of 80286 intel organisational structure 8225Q 80186 CPU subsystem bus controller 8288 intel 82188 CPU-82258
    Text: in t e T 82258 ADVANCED DIRECT MEMORY ACCESS COPROCESSOR ADMA Automatic Data Chaining for Gathering and Scattering of Data Blocks 16 MByte Addressing Range 16 MByte Block Transfer Capability “On the Fly” Compare, Translate and Verify Operations Automatic Assembly/Disassembly of


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    PDF 68-Pin intel 82258 82258 ulm 2003 logical block diagram of 80286 intel organisational structure 8225Q 80186 CPU subsystem bus controller 8288 intel 82188 CPU-82258

    Siemens 80186

    Abstract: so do chan 4558 82257 SAB 80186 SAB82257 8086 a23 445-1 i82257
    Text: Advanced DMA Controller SAB 82257 for 8-/16-Bit Microcomputer Systems 8 MHz • High-performance 16-bit DMA controller for 16-bit family processors SAB 80286, SAB 80186/188, SAB 8086/88 • 4 independent high-speed DMA channels • Adaptive on-chip bus interface for


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    PDF 8-/16-Bit 16-bit 16/8-bit Siemens 80186 so do chan 4558 82257 SAB 80186 SAB82257 8086 a23 445-1 i82257

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR T Y P E 2SC2714 U nit in mm H IG H F R E Q U E N C Y A M P L IF IE R A P P L IC A T IO N S . F M , RF, M IX , IF A M P L IF IE R A P P L IC A T IO N S . +C12 5 1.3-015 FEATURES : • dd +l HO EE­ Small Reverse Transfer Capacitance: Cre = 0.7pF Typ.


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    PDF 2SC2714 100MHz) SSC2714