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    2SC271 Price and Stock

    Toshiba America Electronic Components 2SC2712-GR,LF

    TRANS NPN 50V 0.15A SMINI
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    DigiKey 2SC2712-GR,LF Reel 51,000 3,000
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    Mouser Electronics 2SC2712-GR,LF 132,752
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    TTI 2SC2712-GR,LF Reel 27,000 3,000
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    Toshiba America Electronic Components 2SC2712-Y,LF

    TRANS NPN 50V 0.15A SMINI
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    DigiKey 2SC2712-Y,LF Reel 36,000 3,000
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    2SC2712-Y,LF Cut Tape 3,987 1
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    Avnet Americas 2SC2712-Y,LF Reel 53 Weeks, 1 Days 3,000
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    2SC2712-Y,LF Reel 20 Weeks 3,000
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    Mouser Electronics 2SC2712-Y,LF 167,152
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    TTI 2SC2712-Y,LF Reel 3,000
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    Toshiba America Electronic Components 2SC2713-GR,LF

    TRANS NPN 120V 0.1A TO236
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    DigiKey 2SC2713-GR,LF Reel 24,000 3,000
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    Avnet Americas 2SC2713-GR,LF Reel 20 Weeks 3,000
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    Mouser Electronics 2SC2713-GR,LF 56,686
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    Toshiba America Electronic Components 2SC2712-OTE85LF

    TRANS NPN 50V 0.15A TO236
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    DigiKey 2SC2712-OTE85LF Reel 18,000 3,000
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    2SC2712-OTE85LF Cut Tape 4,945 1
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    Mouser Electronics 2SC2712-OTE85LF 7,959
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    Toshiba America Electronic Components 2SC2713-BL,LF

    TRANS NPN 120V 0.1A TO236
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    DigiKey 2SC2713-BL,LF Reel 12,000 3,000
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    2SC2713-BL,LF Cut Tape 4,449 1
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    Mouser Electronics 2SC2713-BL,LF 233,142
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    2SC271 Datasheets (272)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC271 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC271 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC271 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC271 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC271 Unknown Cross Reference Datasheet Scan PDF
    2SC271 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC271 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC271 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC271 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC271 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC271 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2710 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2710 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2710 Unknown Cross Reference Datasheet Scan PDF
    2SC2710 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC2710 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2710 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2710 Unknown Silicon NPN for audio application Scan PDF
    2SC2710 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2710 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ...

    2SC271 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc2712

    Abstract: C 029 Transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR „ 3 FEATURES 1 2 * High Voltage and High Current : VCEO=50V, IC=150mA Max. * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE


    Original     		PDF 2SC2712 150mA OT-23 OT-323 2SC2712L 2SC2712G 2SC2712L-x-AE3-R 2SC2712G-x-AE3-R 2SC2712L-x-AL3-R 2SC2712G-x-AL3-R 2sc2712 C 029 Transistor

    2SC2712

    Abstract: C1000-BL 2SA1162 SC 1000 BL
    Text: 2SC2712 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC2712 ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 単位: mm • 高耐圧です。 • コレクタ電流が大きい。: IC = 150 mA (最大) •


    Original     		PDF 2SC2712 2SA1162 O-236MOD SC-59 2SC2712 C1000-BL 2SA1162 SC 1000 BL

    2SC2710

    Abstract: 2SA1150
    Text: 2SC2710 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2710 ○ 低周波増幅用 単位: mm • 直流電流増幅率が高い。: hFE (1) = 100~320 • 2SA1150 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)


    Original     		PDF 2SC2710 2SA1150 2SC2710 2SA1150

    2SA1150

    Abstract: 2SC2710
    Text: 2SA1150 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1150 ○ 低周波増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SC2710 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)


    Original     		PDF 2SA1150 2SC2710 2SA1150 2SC2710

    Untitled

    Abstract: No abstract text available
    Text: 2SC2712 3 1 2 SOT-23 WEITRON http://www.weitron.com.tw 1/4 12-Dec-2013 2SC2712 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued) Characteristics Symbol Min Typ Unit Max ON CHARACTERISTICS DC Current Gain (IC= 2 mAdc, VCE= 6.0 Vdc) Collector-Emitter Saturation Voltage


    Original     		PDF 2SC2712 OT-23 12-Dec-2013 10Vdc, 10mAdc) OT-23

    TRANSISTOR BL 100

    Abstract: 2SC2712 3040d
    Text: 2SC2712 NPN Silicon General Purpose Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES 3 Collector 1 Base *Power Dissipation PCM: 150 mW Tamb=25 oC 2 *Collector Current ICM: 150 mA A *Collector-Base Voltage


    Original     		PDF 2SC2712 OT-23 100mA, 01-Jun-2002 TRANSISTOR BL 100 2SC2712 3040d

    2SA1162

    Abstract: 2SC2712 2SA1162 PNP
    Text: 2SA1162 PNP Silicon General Purpose Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 3 FEATURES n n n n Collector 3 1 2 A RoHS Compliant Product Low noise : NF= 1dB Typ. ,10dB (Max.) Base L 3 Complementary to 2SC2712.


    Original     		PDF 2SA1162 OT-23 2SC2712. -100mA -10mA 01-Jun-2002 2SA1162 2SC2712 2SA1162 PNP

    2SC2712

    Abstract: 2SC2712GR 2SC2712-BL 2SC2712-GR 2SC2712-Y 2SC2712Y 2SA1162 2SC2712-O SOT 23 LY 2SC2712-GR LG
    Text: 2SC2712 0.15A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE Low Noise: NF=1dB Typ. , 10db(Max.) Complements of the 2SA1162 A L 3 3 C B Top View CLASSIFICATION OF hFE


    Original     		PDF 2SC2712 OT-23 2SA1162 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL 100mA, 2SC2712 2SC2712GR 2SC2712-BL 2SC2712-GR 2SC2712-Y 2SC2712Y 2SA1162 2SC2712-O SOT 23 LY 2SC2712-GR LG

    2SC2712

    Abstract: 2SA1162 sot-23 Marking LG
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2712 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURE • Low Noise: NF=1 dB (Typ),10dB(MAX) · Complementary to 2SA1162 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 2SC2712 2SA1162 100mA, 2SC2712 2SA1162 sot-23 Marking LG

    2N2458

    Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386


    Original     		PDF 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2N479 2N479A 2N2458 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2712 Features • NPN Plastic-Encapsulate Transistors Complementary to 2SA1162 Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating


    Original     		PDF 2SA1162 2SC2712 OT-23 60Vdc

    MARKING W2 SOT23 TRANSISTOR

    Abstract: ta 8268 sot-23 transistor p2 marking MARKING W3 SOT23 TRANSISTOR sot23 Transistor marking p2 3543 amplifier 2SC2712LT1 2SC2712L MARKING d4 npn sot23 sot-23 Marking LG
    Text: 2SC2712LT1 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. * High Voltage and High Current: Vceo=50V,Ic=150mA Max. Package:SOT-23 * Excellent hFE Linearity: hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.)


    Original     		PDF 2SC2712LT1 150mA OT-23 2SA1162 600TYP 6614TYP 99221TYP 1102TYP MARKING W2 SOT23 TRANSISTOR ta 8268 sot-23 transistor p2 marking MARKING W3 SOT23 TRANSISTOR sot23 Transistor marking p2 3543 amplifier 2SC2712LT1 2SC2712L MARKING d4 npn sot23 sot-23 Marking LG

    marking 12Y

    Abstract: 12y sot 23 2SA1037 2SC27 2SC2712 Collector 5v npn TRANSISTOR 12Y marking
    Text: 2SC2712 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 PRF-AMPLIFIER,LOW LEVEL&LOW NOISE 1 Complemen to 2SA1037 Collector-current:Ic=100mA 2 Collector-Emiller Voltage:V CE =45V 1. 1.BASE 2.EMITTER 3.COLLECTOR High Totalpower Dissipation Pc=225mW High life And Good Linearity


    Original     		PDF 2SC2712 OT-23 2SA1037 100mA 225mW 100mA, 100MHz 300uS 2SC27 marking 12Y 12y sot 23 2SA1037 2SC2712 Collector 5v npn TRANSISTOR 12Y marking

    PNP Epitaxial Silicon Transistor sot-23

    Abstract: 2SA1037 2SC2712 M6 SOT23-3
    Text: 2SA1037 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 LOW FREQRENCY,LOW NOISE AMPLIFIER 1 Complemen to 2SC2712 Collector-current:Ic=-100mA 2 Collector-Emiller Voltage:V CE =-45V 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2SA1037 OT-23 2SC2712 -100mA -100mA, -10mA 300uS 2SA1037 PNP Epitaxial Silicon Transistor sot-23 2SC2712 M6 SOT23-3

    hp 2503

    Abstract: 2SC2713
    Text: SILICON NPN EPITAXIAL TYPE 2SC2713 A U D I O FREQ UENC Y G E N E R A L A P P L IC A T IO N S PUR PO SE A M P L IF IE R Unit in mm + 0i5 2.5-0.3 + Û2 5 1.5— a 15 FEATURES : . High Voltage vCEO =120V Od . Excellent hpg Linearity +I ÊE- : hF E 0.1mA /hpE(2mA)=0.95(Typ.)


    OCR Scan     		PDF 2SC2713 2SA1163. hp 2503 2SC2713

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR T Y P E 2SC2714 U nit in mm H IG H F R E Q U E N C Y A M P L IF IE R A P P L IC A T IO N S . F M , RF, M IX , IF A M P L IF IE R A P P L IC A T IO N S . +C12 5 1.3-015 FEATURES : • dd +l HO EE­ Small Reverse Transfer Capacitance: Cre = 0.7pF Typ.


    OCR Scan     		PDF 2SC2714 100MHz) SSC2714

    2SC2216

    Abstract: 2SC2717
    Text: T O S H IB A 2SC2216,2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 U nit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. . High Gain : Gpe = 33dB Typ. (f=45M Hz) • Good Linearity of hpE- SYMBOL CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SC2216 2SC2717 2SC2216, 45MHz) SC-43

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE TRANSISTOR 2SC2712 Unit in mm A U D IO FR EQUENCY GENERAL PURPOSE AM PLIFIER APPLIC A TIO N S High Voltage and High Current : Vq eo = 50V, Ic = 150mA Max. • Excellent hj’E Linearity : hfE (Iq = 0.1mA) / hpE (Ic = 2mA) =0.95 (Typ.)


    OCR Scan     		PDF 2SC2712 150mA 2SA1162 -I-CL25

    transistor toshiba marking hf

    Abstract: 2SA1162 2SC2712
    Text: 2SC2712 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2712 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • High Voltage and High Current : V0EO-5OV, Ic = 150mA (Max.) Excellent hjpg Linearity : hFE (Ic = 0.1mA) / hFE (Ic = 2mA) = 0.95 (Typ.)


    OCR Scan     		PDF 2SC2712 150mA 2SA1162 270Hz transistor toshiba marking hf 2SA1162 2SC2712

    OK304

    Abstract: 2sc2216
    Text: 2SC2216,2SC2717 T O S H IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. 5.XMAX. High Gain : Gpe = 33dB Typ. (f=45MHz) Good Linearity of hEE. F a X ol ^ 0.45 o MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC2216 2SC2717 2SC2216, 45MHz) 2SC2717 SC-43 OK304

    2SC3258

    Abstract: 2SC3950 2SC3209 3918 2SC4116 2sc2562 2SC3958 2SC3874 2SC4211 2SD667
    Text: - £ Type No. 2SC 3927 £ Manuf. ^ H B ft SANYO TOSHIBA -yy'ry 2SC3Q90 2SC4157 2SC 3928 = Ü 2SC2812 2SC2712 2SC 3929 / 2SC4211 2SC4116 2SC4211 2SC4211 2SC 3931 fé T fé T fé T fé T 2SC 3932 fé 2SC 3933 2SC4853 2SC 3935 fé T fé T fé T 2SC 3936 fé T


    OCR Scan     		PDF 2SC3090 2SC4157 2SC2812 2SC2712 2SC1623 2SC2463 2SD601A 2SC2412K 2SC4211 2SC4116 2SC3258 2SC3950 2SC3209 3918 2SC4116 2sc2562 2SC3958 2SC3874 2SD667

    2SC2715

    Abstract: TRANSISTOR MARKING FA
    Text: 2SC2715 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • + 0.5 2.5-0.3 + 0.25 High Power Gain : Gpe = 2dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage.


    OCR Scan     		PDF 2SC2715 SC-59 2SC2715 TRANSISTOR MARKING FA

    10ID

    Abstract: 2SC2714 marking 8fb
    Text: TOSHIBA 2 SC2 71 4 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2714 HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS Unit in mm + 0.5 • Sm all Reverse Transfer Capacitance : Cre = 0.7pF (Typ.) • Low Noise Figure : NF = 2.5dB (Typ.) (f=100MHz)


    OCR Scan     		PDF 2SC2714 100MHz) 10ID 2SC2714 marking 8fb

    10ID

    Abstract: 2SC2714
    Text: TO SH IBA 2SC2714 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2714 HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS Unit in mm + 0.5 2 .5 -0 .3 + • Small Reverse Transfer Capacitance : Cre = 0.7pF (Typ.)


    OCR Scan     		PDF 2SC2714 100MHz) 10ID 2SC2714