A12 SOT23-5
Abstract: A4A sot23 - 5 lead AD8541 A4A A4a SOT23-5 a4a operational sc70-5 a12 piezoelectric transducer amplifiers "Piezoelectric Sensors" AD8542 AD8544
Text: General-Purpose CMOS Rail-to-Rail Amplifiers AD8541/AD8542/AD8544 Single-supply operation: 2.7 V to 5.5 V Low supply current: 45 A/amplifier Wide bandwidth: 1 MHz No phase reversal Low input currents: 4 pA Unity gain stable Rail-to-rail input and output
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AD8541/AD8542/AD8544
AD8541
OT-23
14-Lead
A12 SOT23-5
A4A sot23 - 5 lead
AD8541 A4A
A4a SOT23-5
a4a operational
sc70-5 a12
piezoelectric transducer amplifiers
"Piezoelectric Sensors"
AD8542
AD8544
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PDF
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A12 SOT23-5
Abstract: AD8541 A4A A4a SOT23-5 Analog Devices a4a A4A sot23 - 5 lead piezoelectric transducer amplifiers MO-153-AA Package AD8541 AD8541AKS-R2 AD8542
Text: General-Purpose CMOS Rail-to-Rail Amplifiers AD8541/AD8542/AD8544 Single-supply operation: 2.7 V to 5.5 V Low supply current: 45 A/amplifier Wide bandwidth: 1 MHz No phase reversal Low input currents: 4 pA Unity gain stable Rail-to-rail input and output
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AD8541/AD8542/AD8544
AD8541
OT-23
14-Lead
A12 SOT23-5
AD8541 A4A
A4a SOT23-5
Analog Devices a4a
A4A sot23 - 5 lead
piezoelectric transducer amplifiers
MO-153-AA Package
AD8541
AD8541AKS-R2
AD8542
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PDF
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AD8541 A4A
Abstract: Lambda Sensor twin-t AD8541 AD8541AKS AD8541AR AD8541ART AD8542 AD8542AR AD8542ARM
Text: a FEATURES Single Supply Operation: 2.7 V to 5.5 V Low Supply Current: 45 A/Amplifier Wide Bandwidth: 1 MHz No Phase Reversal Low Input Currents: 4 pA Unity Gain Stable Rail-to-Rail Input and Output General-Purpose CMOS Rail-to-Rail Amplifiers AD8541/AD8542/AD8544
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AD8541/AD8542/AD8544
OT-23
AD8541
AD8541/AD8542/AD8544
AD8541 A4A
Lambda Sensor
twin-t
AD8541
AD8541AKS
AD8541AR
AD8541ART
AD8542
AD8542AR
AD8542ARM
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PDF
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twin-t
Abstract: AD8541 A4A AD8544 NOx sensor CPS250 Lambda Sensor twin-T instrumentation amplifier U1 3515 AD8541 AD8541AKS
Text: a FEATURES Single-Supply Operation: 2.7 V to 5.5 V Low Supply Current: 45 A/Amplifier Wide Bandwidth: 1 MHz No Phase Reversal Low Input Currents: 4 pA Unity Gain Stable Rail-to-Rail Input and Output General-Purpose CMOS Rail-to-Rail Amplifiers AD8541/AD8542/AD8544
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AD8541/AD8542/AD8544
OT-23
AD8541
AD8541/AD8542/AD8544
C00935
twin-t
AD8541 A4A
AD8544
NOx sensor
CPS250
Lambda Sensor
twin-T instrumentation amplifier
U1 3515
AD8541
AD8541AKS
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PDF
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Untitled
Abstract: No abstract text available
Text: CMOS Rail-to-Rail General-Purpose Amplifiers AD8541/AD8542/AD8544 Single-supply operation: 2.7 V to 5.5 V Low supply current: 45 µA/amplifier Wide bandwidth: 1 MHz No phase reversal Low input currents: 4 pA Unity gain stable Rail-to-rail input and output
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AD8541/AD8542/AD8544
AD8541
OT-23
D00935-0-6/11
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PDF
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AD8541
Abstract: AD853 twin-t AD8541AR AD8541ART AD8542 AD8542AR AD8542ARM AD8544 RU-14
Text: a FEATURES Single Supply Operation: +2.7 V to +5.5 V Low Supply Current: 45 A/Amplifier Wide Bandwidth: 1 MHz No Phase Reversal Low Input Currents: 4 pA Unity Gain Stable Rail-to-Rail Input and Output APPLICATIONS ASIC Input or Output Amplifier Sensor Interface
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AD8541/AD8542/AD8544
AD8541
OT-23-5
SO-14
RU-14
AD8541
AD853
twin-t
AD8541AR
AD8541ART
AD8542
AD8542AR
AD8542ARM
AD8544
RU-14
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PDF
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AD8541
Abstract: AD8541AKS AD8541AR AD8541ART AD8542 AD8542AR AD8542ARM AD8544 ad8542AR SO8
Text: a FEATURES Single Supply Operation: 2.7 V to 5.5 V Low Supply Current: 45 A/Amplifier Wide Bandwidth: 1 MHz No Phase Reversal Low Input Currents: 4 pA Unity Gain Stable Rail-to-Rail Input and Output General-Purpose CMOS Rail-to-Rail Amplifiers AD8541/AD8542/AD8544
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Original
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AD8541/AD8542/AD8544
OT-23
AD8541
AD8541/AD8542/AD8544
AD8541
AD8541AKS
AD8541AR
AD8541ART
AD8542
AD8542AR
AD8542ARM
AD8544
ad8542AR SO8
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PDF
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twin-t
Abstract: AD8541 AD8542 AD8544 sc70-5 a12 piezoelectric transducer amplifiers AD8541AKSZ-R2
Text: General-Purpose CMOS Rail-to-Rail Amplifiers AD8541/AD8542/AD8544 Single-supply operation: 2.7 V to 5.5 V Low supply current: 45 A/amplifier Wide bandwidth: 1 MHz No phase reversal Low input currents: 4 pA Unity gain stable Rail-to-rail input and output
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Original
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AD8541/AD8542/AD8544
AD8541
OT-23
14-Lead
RU-14
twin-t
AD8541
AD8542
AD8544
sc70-5 a12
piezoelectric transducer amplifiers
AD8541AKSZ-R2
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PDF
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AD8541ARTZ-REEL7
Abstract: ad8542 a12 Sc70-5 A4A sot23 - 5 lead
Text: CMOS Rail-to-Rail General-Purpose Amplifiers AD8541/AD8542/AD8544 Single-supply operation: 2.7 V to 5.5 V Low supply current: 45 A/amplifier Wide bandwidth: 1 MHz No phase reversal Low input currents: 4 pA Unity gain stable Rail-to-rail input and output
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Original
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AD8541/AD8542/AD8544
AD8541
OT-23
AD8541/AD8542/AD8544
D00935-0-6/11
AD8541ARTZ-REEL7
ad8542
a12 Sc70-5
A4A sot23 - 5 lead
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PDF
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AD8541 A4A
Abstract: A4a SOT23-5 A12 sot23-5 twin-t AD8541 AD8542 AD8544 MO-178-AA RU-14 sc70-5 a12
Text: General-Purpose CMOS Rail-to-Rail Amplifiers AD8541/AD8542/AD8544 APPLICATIONS ASIC input or output amplifiers Sensor interfaces Piezoelectric transducer amplifiers Medical instrumentations Mobile communications Audio outputs Portable systems PIN CONFIGURATIONS
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AD8541/AD8542/AD8544
AD8541
OT-23
RU-14
AD8541 A4A
A4a SOT23-5
A12 sot23-5
twin-t
AD8541
AD8542
AD8544
MO-178-AA
RU-14
sc70-5 a12
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PDF
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AD8541 A4A
Abstract: Lambda Sensor twin-t AD8541 AD8541AKS-R2 AD8541AKS-REEL7 AD8541AKSZ-REEL7 AD8541AR AD8541AR-REEL AD8542
Text: a FEATURES Single-Supply Operation: 2.7 V to 5.5 V Low Supply Current: 45 A/Amplifier Wide Bandwidth: 1 MHz No Phase Reversal Low Input Currents: 4 pA Unity Gain Stable Rail-to-Rail Input and Output APPLICATIONS ASIC Input or Output Amplifier Sensor Interface
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Original
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AD8541/AD8542/AD8544
OT-23
AD8541
C00935
AD8541 A4A
Lambda Sensor
twin-t
AD8541
AD8541AKS-R2
AD8541AKS-REEL7
AD8541AKSZ-REEL7
AD8541AR
AD8541AR-REEL
AD8542
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PDF
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Numonyx
Abstract: NAND01GWxA2B-KGD NAND01GW3A2B-KGD NAND01GW4A2B-KGD AI07587 NAND01G AI13144
Text: NAND01GW3A2B-KGD NAND01GW4A2B-KGD Known Good Die, 1 Gbit x 8/x 16 , 528 Byte/264 word page, 3 V, NAND Flash memory Features • High density NAND Flash memory – 1 Gbit memory array – 32 Mbit spare area – Cost effective solutions for mass storage applications
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NAND01GW3A2B-KGD
NAND01GW4A2B-KGD
Byte/264
Numonyx
NAND01GWxA2B-KGD
NAND01GW3A2B-KGD
NAND01GW4A2B-KGD
AI07587
NAND01G
AI13144
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PDF
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Untitled
Abstract: No abstract text available
Text: M65KA128AE 128 Mbit 4 Banks x 2 Mbit x 16 1.8 V Supply, Low Power SDRAM Features summary • 128 Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 2 Mwords, each 16 bits wide ■ Synchronous Burst Read and Write – Fixed burst lengths: 1, 2, 4, 8 words or Full
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M65KA128AE
133MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, NAND flash memories Features ● ● High density NAND flash memories – 512-Mbit memory array – Cost effective solutions for mass storage applications NAND interface
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NAND512R3A2C
NAND512R4A2C
NAND512W3A2C
NAND512W4A2C
512-Mbit,
528-byte/264-word
512-Mbit
TSOP48
VFBGA55
VFBGA63
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PDF
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|
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NAND512W3A2C
Abstract: No abstract text available
Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Not For New Design Features ● High density NAND flash memories – 512-Mbit memory array – Cost effective solutions for mass storage applications
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NAND512R3A2C
NAND512R4A2C
NAND512W3A2C
512-Mbit,
528-byte/264-word
512-Mbit
NAND512W3A2C
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PDF
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C4858
Abstract: No abstract text available
Text: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, NAND flash memories Features • ● High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications
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NAND128-A
NAND256-A
128-Mbit
256-Mbit,
528-byte/264-word
256-Mbit
32-Mbit
C4858
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PDF
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AI09
Abstract: No abstract text available
Text: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, SLC NAND flash memories Features • High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications
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NAND128-A
NAND256-A
128-Mbit
256-Mbit,
528-byte/264-word
256-Mbit
32-Mbit
AI09
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PDF
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NS4159
Abstract: 528-byte
Text: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, SLC NAND flash memories Features • ● ■ High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage
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NAND128-A
NAND256-A
128-Mbit
256-Mbit,
528-byte/264-word
256-Mbit
32-Mbit
NS4159
528-byte
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PDF
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NAND512-A2C
Abstract: NAND512A2C NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C VFBGA63
Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, NAND flash memories Features ● ● High density NAND flash memories – 512-Mbit memory array – Cost effective solutions for mass storage applications NAND interface
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NAND512R3A2C
NAND512R4A2C
NAND512W3A2C
NAND512W4A2C
512-Mbit,
528-byte/264-word
512-Mbit
TSOP48
VFBGA55
VFBGA63
NAND512-A2C
NAND512A2C
NAND512R4A2C
NAND512W4A2C
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PDF
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fbga63 package
Abstract: No abstract text available
Text: NAND128-A NAND256-A 128-Mbit or 256-Mbit 528-byte/264-word page, 1.8 V/3 V, NAND flash memories Features • ● High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications
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NAND128-A
NAND256-A
128-Mbit
256-Mbit
528-byte/264-word
32-Mbit
fbga63 package
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PDF
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JS28F256M29EWL
Abstract: JS28F512m29ewh pc28f512m29ewh JS28F512M29EWL Amax-A15 M29EWL
Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit x8 / x16, page, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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M29EW
256-Mbit,
512-Mbit,
100ns
512-word
48MB/s)
Kbytes/64
JS28F256M29EWL
JS28F512m29ewh
pc28f512m29ewh
JS28F512M29EWL
Amax-A15
M29EWL
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PDF
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M29W640GB
Abstract: M29W640GT M29W640GL
Text: M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 8 Mbit x8 or 4 Mbit x16, uniform block or boot block 3 V supply flash memory Feature Supply voltage – VCC = 2.7 to 3.6 V for program/erase/read – VPP =12 V for fast program (optional) FBGA TSOP48 (NA)
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M29W640GH
M29W640GL
M29W640GT
M29W640GB
64-Mbit
16-word/32-byte
M29W640GH/L:
M29W640GT/B
M29W640GB
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PDF
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3F8000H-3FFFFFH
Abstract: No abstract text available
Text: M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 8 Mbit x8 or 4 Mbit x16, uniform block or boot block 3 V supply flash memory Feature • Supply voltage – VCC = 2.7 to 3.6 V for program/erase/read – VPP =12 V for fast program (optional) ■ Asynchronous random/page read
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M29W640GH
M29W640GL
M29W640GT
M29W640GB
64-Mbit
16-word/32-byte
M29W640GH/L:
M29W640GT/B
3F8000H-3FFFFFH
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PDF
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JS28F256M29EWL
Abstract: JS28F00AM29EWH JS28F512M29EWL JS28F512m29ewh PC28F512M29EWH js28f256m29ewh JS28F00AM29EWL PC28F00AM29EWL PC28F256M29EWL M29EW
Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit x8 / x16, page, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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M29EW
256-Mbit,
512-Mbit,
100ns
512-word
48MB/s)
Kbytes/64
512-Mbit
JS28F256M29EWL
JS28F00AM29EWH
JS28F512M29EWL
JS28F512m29ewh
PC28F512M29EWH
js28f256m29ewh
JS28F00AM29EWL
PC28F00AM29EWL
PC28F256M29EWL
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PDF
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