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    BR1632 EQUIVALENT Search Results

    BR1632 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    BR1632 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Rayovac BR2335

    Abstract: bR2335 equivalent br2335 Rayovac BR1632 FB1225H2 BR2032 "cross reference" rayovac fb1225h2 br2335 battery fb1225h Rayovac BR2325
    Text: I. Charging Characteristics J. Short Circuit Recovery Although any charging of BR Lithium cells is to be avoided, some charging may occur even in a well designed electrical circuit due to leakage current of the protecting diodes. The diode used in a circuit


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    BR1225 BR2325 BR1225 BR1632 BR2032 BR2335 FB1225H2 FB2325H2 Rayovac BR2335 bR2335 equivalent Rayovac BR1632 BR2032 "cross reference" rayovac fb1225h2 br2335 battery fb1225h Rayovac BR2325 PDF

    K6X8008T2B-UF55

    Abstract: m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs and Serial RTCs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


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    AN1012 K6X8008T2B-UF55 m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety PDF

    BR2335

    Abstract: bR2335 equivalent Rayovac BR2032 Rayovac BR2335 BR1632 BR1632T3L BR2335 t3l BR1225-1VB BR1632R18 BR2032 T3l
    Text: C. Dimensional Drawings For illustration only. Contact Rayovac for complete specs. BR1225T2R BR1225 BR1225RT2 .203" .492" .225" + .492" Tab Detail: Figure 56 .303" .225" .250" (–) .400" .120" (–) .098" (+) (–) .193" .336" .110" .151" .310" (+) .050"


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    BR1225T2R BR1225 BR1225RT2 BR1225SM2 BR1225SR2 BR1225T2 BR2325-B BR2325P2-B BR2325T2-B BR2325T3L-B BR2335 bR2335 equivalent Rayovac BR2032 Rayovac BR2335 BR1632 BR1632T3L BR2335 t3l BR1225-1VB BR1632R18 BR2032 T3l PDF

    Untitled

    Abstract: No abstract text available
    Text: AN1012 Application note Predicting the battery life and data retention period of NVRAMs and serial RTCs Introduction Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their


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    AN1012 PDF

    14270x

    Abstract: 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


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    AN1012 14270x 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02 PDF

    BR1632 safety

    Abstract: BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


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    AN1012 BR1632 safety BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012 PDF

    BR1632 safety

    Abstract: mk48t08 BR1632 CMOS GATE ARRAYs mitsubishi application note AN1012 m48t35 AN1012 M48Z02 M48Z08 M48Z12
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


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    AN1012 BR1632 safety mk48t08 BR1632 CMOS GATE ARRAYs mitsubishi application note AN1012 m48t35 AN1012 M48Z02 M48Z08 M48Z12 PDF

    FB1225H2

    Abstract: Rayovac BR2335 Rayovac BR2032 fb2325h2 rayovac fb1225h2 Rayovac BR2325 Rayovac Rayovac BR1632 Rayovac BR1225 BR2335
    Text: C. Dimensional Drawings For illustration only. Contact Rayovac for complete specs. BR1225T2R BR1225 BR1225RT2 .203" .492" .225" + .492" Tab Detail: Figure 56 .303" .225" .250" (–) .400" .120" (–) .098" (+) (–) .193" .336" .110" .151" .310" (+) .050"


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    BR1225T2R BR1225 BR1225RT2 BR1225SM2 BR1225SR2 BR1225T2 FB1225H2 Rayovac BR2335 Rayovac BR2032 fb2325h2 rayovac fb1225h2 Rayovac BR2325 Rayovac Rayovac BR1632 Rayovac BR1225 BR2335 PDF

    br1632 br1225

    Abstract: No abstract text available
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


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    AN1012 br1632 br1225 PDF

    fb1225

    Abstract: fb2325h2 Rayovac BR2032 FB1225H2 MH12542 BR1632 safety rayovac fb1225h2 BR1632R81-B BR2335-B FB2325
    Text: OEM /Technical Products R E F E R E N C E G U I D E Application Notes & Product Data Sheet Lithium Carbon-monofluoride BR Coin Cells and FB Encapsulated Lithium Coin Cells I. Introduction IV. Applications Lithium has become a generic term representing a


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    Rayovac BR2335

    Abstract: CR Li MnO2 chart BR2032-BA BR2032T3L-B BR2335-BA MH12542 fb1225
    Text: OEM / Technical Products R e f e r e n c e G u i d e Application Notes & Product Data Sheet Lithium Carbon-monofluoride BR Coin Cells and FB Encapsulated Lithium Coin Cells I. Introduction IV. Applications Lithium has become a generic term representing a


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    FB1225

    Abstract: Rayovac BR2032 FB1225H2 Rayovac BR2335 BR2335 Rayovac BR2325 BR2032 fb232 Rayovac BR1632 fb2325h2
    Text: OEM / Technical Products R E F E R E N C E G U I D E Application Notes & Product Data Sheet Lithium Carbon-monofluoride BR Coin Cells and FB Encapsulated Lithium Coin Cells I. Introduction IV. Applications Lithium has become a generic term representing a


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    Rayovac BR2335

    Abstract: Rayovac BR2032 BR2335 L4W 74 FB1225H2 fb2325h2 bR2335 equivalent br2335 battery FB2325 diode SR60
    Text: Application Notes & Product Data Sheet Lifex Lithium Coin Cells & FB Encapsulated Lithium Coin Cells - Part 4 X. Product Availability & Cross Reference Table Stock Number BR1225 BR1225-B BR1225H2R-B BR1225MT2-B BR1225RT2-B BR1225R18-B BR1225SM-B BR1225SM2-B


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    BR1225 BR1225-B BR1225H2R-B BR1225MT2-B BR1225RT2-B BR1225R18-B BR1225SM-B BR1225SM2-B BR1225SR2-B BR1225T2-1 Rayovac BR2335 Rayovac BR2032 BR2335 L4W 74 FB1225H2 fb2325h2 bR2335 equivalent br2335 battery FB2325 diode SR60 PDF

    BR1225

    Abstract: AN1011 AN1012 BR1632 Lithium Battery Protection Circuit for Battery P LiCFx
    Text: AN1011 Application note Battery technology used in NVRAM products from ST Lithium Carbon MonoFlouride LiCFx batteries are used by STMicroelectronics in their line of ZEROPOWER and TIMEKEEPER® devices. These are used to provide the battery backup for the static RAM array and to maintain the running of the real-time clock in the


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    AN1011 BR1225 AN1011 AN1012 BR1632 Lithium Battery Protection Circuit for Battery P LiCFx PDF

    Untitled

    Abstract: No abstract text available
    Text: M4Z28-BR00SH M4Z32-BR00SH ZEROPOWER SNAPHAT® battery Datasheet - production data Description The M4Zxx-BR00SH SNAPHAT® top is a detachable lithium power source for ST’s nonvolatile ZEROPOWER® surface-mount SOIC package 28-pin . The SNAPHAT top contains a lithium battery and


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    M4Z28-BR00SH M4Z32-BR00SH M4Zxx-BR00SH 28-pin) 28-pin DocID013124 PDF

    AN1012

    Abstract: BR1225 BR1632 E89556 M4Z28-BR00SH M4Z32-BR00SH
    Text: M4Z28-BR00SH M4Z32-BR00SH ZEROPOWER SNAPHAT® battery Features • Provides battery backup power for non-volatile ZEROPOWER® and supervisor devices in the 28-pin SNAPHAT® SOIC package ■ Removable battery avoids heat associated with surface-mount process


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    M4Z28-BR00SH M4Z32-BR00SH 28-pin M4Z28-BR00SH, AN1012 BR1225 BR1632 E89556 M4Z28-BR00SH M4Z32-BR00SH PDF

    AN1012

    Abstract: BR1225 BR1632 E89556 M4T28-BR12SH M4T32-BR12SH M4TXX-BR12SH
    Text: M4T28-BR12SH M4T32-BR12SH TIMEKEEPER SNAPHAT® battery and crystal Features • Provides battery backup power for non-volatile TIMEKEEPER® and supervisor devices in the 28- or 44-pin SNAPHAT® SOIC package ■ Removable battery avoids heat associated with


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    M4T28-BR12SH M4T32-BR12SH 44-pin M4T28-BR12SH, AN1012 BR1225 BR1632 E89556 M4T28-BR12SH M4T32-BR12SH M4TXX-BR12SH PDF

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    Abstract: No abstract text available
    Text: M4T28-BR12SH M4T32-BR12SH Real-time clock and TIMEKEEPER SNAPHAT® battery with crystal Datasheet - production data Description The M4Txx-BR12SH SNAPHAT® top is a detachable lithium power source for ST’s serial real-time clock and non-volatile TIMEKEEPER®


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    M4T28-BR12SH M4T32-BR12SH M4Txx-BR12SH 44-pin) DocID013125 PDF

    soic marking code stmicroelectronics

    Abstract: M41T56 BR1225 M24C64 M41T56C64
    Text: M41T56C64 512 bit 64 bit x8 Serial Access TIMEKEEPER SRAM + 64 Kbit (8192 bit x8) EEPROM PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ 5V ±10% SUPPLY VOLTAGE I2C BUS COMPATIBLE OPERATING TEMPERATURE OF –40 TO 85°C PACKAGING INCLUDES: – 18-lead SOIC (with Embedded Crystal)


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    M41T56C64 18-lead 450nA 100kHz soic marking code stmicroelectronics M41T56 BR1225 M24C64 M41T56C64 PDF

    MH12210

    Abstract: CR2354 equivalent VARTA cr2 CR2330 equivalent discharge curve CR123A RESIN PVC SE 1300 MT920 CR17345 Panasonic BR-C CR1620 equivalent
    Text: International English Lithium Batteries Technical Handbook 2000 PDF File Technical Handbook Copyright 2000 Matsushita Battery Industrial Co., Ltd. All rights Reserved. No part of this technical handbook pdf file may be changed, altered, reproduced in any form or by any means without the prior written permission of


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    RAYOVAC CANADA

    Abstract: No abstract text available
    Text: M41T56C64 512 bit 64 bit x8 Serial Access TIMEKEEPER SRAM + 64 Kbit (8192 bit x8) EEPROM PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ 5V ±10% SUPPLY VOLTAGE I2C BUS COMPATIBLE OPERATING TEMPERATURE OF –40 TO 85°C PACKAGING INCLUDES: – 18-lead SOIC (with Embedded Crystal)


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    M41T56C64 18-lead 450nA 100kHz RAYOVAC CANADA PDF

    Rayovac BR1225

    Abstract: SOX18 BR1225 M24C64 M41T00S M41T00SC64 32.768 khz crystal 5ppm soic date code stmicroelectronics N18E
    Text: M41T00SC64 Real-Time Clock + 64Kbit 8192 x 8 EEPROM Features • 2.7V to 5.5V supply voltage ■ I2C bus compatible ■ Operating temperature of –40 to 85°C ■ Packaging includes: – 18-lead SOIC (with embedded crystal) ■ RoHS compliant Embedded crystal


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    M41T00SC64 64Kbit 18-lead M41T00S) 600nA Rayovac BR1225 SOX18 BR1225 M24C64 M41T00S M41T00SC64 32.768 khz crystal 5ppm soic date code stmicroelectronics N18E PDF

    BR1225

    Abstract: M24C64 M41T56 M41T56C64
    Text: M41T56C64 Serial Real Time Clock with 56 bytes of NVRAM + 64 Kbit 8192 bit x 8 EEPROM Feature summary • 5V ±10% supply voltage ■ I2C bus compatible ■ Operating temperature of –40 to 85°C ■ Packaging includes: – 18-lead SOIC (with embedded crystal)


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    M41T56C64 18-lead 450nA BR1225 M24C64 M41T56 M41T56C64 PDF

    Untitled

    Abstract: No abstract text available
    Text: M41T00SC64 Real-Time Clock + 64Kbit 8192 x 8 EEPROM Features • 2.7V to 5.5V supply voltage ■ I2C bus compatible ■ Operating temperature of –40 to 85°C ■ Packaging includes: – 18-lead SOIC (with embedded crystal) ■ RoHS compliant Embedded crystal


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    M41T00SC64 64Kbit 18-lead M41T00S) 600nA 400kHz SOX18 18-pin 300mil) M41T00SC64MY6F PDF