h12e
Abstract: BCW60DR CR SOT23 power 22E mark B1 sot23 BCW60 BCW60A BCW60AR BCW60B BCW60BR
Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW60 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES 20 20
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BCW60
BCW60AR
BCW60BR
BCW60CR
BCW60DR
150oC
200Hz
h12e
BCW60DR
CR SOT23
power 22E
mark B1 sot23
BCW60
BCW60A
BCW60AR
BCW60B
BCW60BR
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Untitled
Abstract: No abstract text available
Text: BF245A/0 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)25m I(G) Max. (A)10m Absolute Max. Power Diss. (W)300m¥ Maximum Operating Temp (øC)150õ I(GSS) Max. (A)5n @V(GS) (V) (Test Condition)20 V(GS)off Min. (V)0.25
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BF245A/0
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Untitled
Abstract: No abstract text available
Text: BF245A/2 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)25m I(G) Max. (A)10m Absolute Max. Power Diss. (W)300m¥ Maximum Operating Temp (øC)150õ I(GSS) Max. (A)5n @V(GS) (V) (Test Condition)20 V(GS)off Min. (V)0.25
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BF245A/2
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Untitled
Abstract: No abstract text available
Text: 2N3840 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175þ I(CBO) Max. (A).5nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N3840
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RAC168D
Abstract: No abstract text available
Text: FIXED CHIP RESISTOR NETWORKS; RECTANGULAR TYPE KAMAYA OHM RAC •Features 1. High-density SMD packaging contributes higher productivity and reduces assembly costs. 2. Halogen*1 and Antimony*2 free product *1 Cl or Br 900ppm, Cl+Br 1500ppm *2 Sb2O3 900ppm
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Br900ppm,
Br1500ppm
900ppm
RAC102D
RAC104D
RAC164D
RAC168D
RAC102D
RAC164D
RAC168D
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BCW61DR
Abstract: BCW61CR BCW61BR H12E BCW61AR K3024 BCW60 h22e BCW61A BCW61B
Text: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW61 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES -20 -20 µA nA VCES =-32V VCES =-32V ,Tamb=150oC
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BCW61
BCW60
150oC
-10mA
-50mA,
BCW61DR
BCW61CR
BCW61BR
H12E
BCW61AR
K3024
BCW60
h22e
BCW61A
BCW61B
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Untitled
Abstract: No abstract text available
Text: BF256B Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)5n @V(GS) (V) (Test Condition)20 V(GS)off Min. (V) I(DSS) Max. (A)13m
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BF256B
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Untitled
Abstract: No abstract text available
Text: FIXED THICK FILM CHIP RESISTORS; RECTANGULAR TYPE & HIGH VOLTAGE KAMAYA OHM RVC •Features 1. Higher Limiting Element Voltage compared with RMC general use 2. Halogen*1 and Antimony*2 free product *1 Cl or Br 900ppm, Cl+Br 1500ppm *2 Sb2O3 900ppm
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Br900ppm,
Br1500ppm
900ppm
RVC16
RVC16
RVC20
RVC32
RVC50
RVC63
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Untitled
Abstract: No abstract text available
Text: BF256A Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)5n @V(GS) (V) (Test Condition)20 V(GS)off Min. (V) I(DSS) Max. (A)7m
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BF256A
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BF256C
Abstract: No abstract text available
Text: BF256C Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)5n @V(GS) (V) (Test Condition)20 V(GS)off Min. (V) I(DSS) Max. (A)18m
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BF256C
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Untitled
Abstract: No abstract text available
Text: FIXED THICK FILM CHIP RESISTORS; RECTANGULAR TYPE & ANTI SURGE KAMAYA OHM RPC •Features 1. Higher Anti surge performance compared with RMC general use 2. Halogen*1 and Antimony*2 free product *1 Cl or Br 900ppm, Cl+Br 1500ppm *2 Sb2O3 900ppm 3. Stability Class : 5%
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Br900ppm,
Br1500ppm
900ppm
RPC20
RPC32
RPC35
RPC50
RPC63
RPC20,
RPC50,
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Untitled
Abstract: No abstract text available
Text: TRIMMABLE CHIP RESISTORS; RECTANGULAR TYPE KAMAYA OHM FCR •Features 1. FCR is a trimmable device and replaceable with various resistors. 2. Resistance and coating film designed for YAG Laser Trimming. 3. Halogen*1 and Antimony*2 free product *1 Cl or Br 900ppm, Cl+Br 1500ppm
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Br900ppm,
Br1500ppm
900ppm
FCR1/16
FCR1/10
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R027
Abstract: No abstract text available
Text: FIXED THICK FILM CHIP RESISTORS; RECTANGULAR TYPE & LOW OHM KAMAYA OHM RLS •Features 1. Suitable for current detection of high-precision circuits power supply, motor, etc. 2. Halogen*1 and Antimony*2 free product *1 Cl or Br 900ppm, Cl+Br 1500ppm *2 Sb2O3 900ppm
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Br900ppm,
Br1500ppm
900ppm
RLS50
RLS63
R027
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kamaya resistors
Abstract: R005-F
Text: NEW METAL-PLATE CHIP RESISTORS; LOW OHM KAMAYA OHM •Features 1. New Lineup, 1m⏲ to 5m⏲, 10m⏲, 15m⏲. 2. Suitable for current sensing of Battery pack. 3. Pb*1, Halogen*2 and Antimony*3 free product *1 Pb 1000ppm *2 Cl or Br 900ppm, Cl+Br 1500ppm
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Pb1000ppm
Br900ppm,
Br1500ppm
900ppm
RLP16.
RLP16
RLP63
MLP63
kamaya resistors
R005-F
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Untitled
Abstract: No abstract text available
Text: BFW11 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)20m I(G) Max. (A)10m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(GSS) Max. (A)100p @V(GS) (V) (Test Condition)20 V(GS)off Min. (V) I(DSS) Max. (A)10m
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BFW11
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BFW10 JFET
Abstract: No abstract text available
Text: BFW10 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)20m I(G) Max. (A)10m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(GSS) Max. (A).1u @V(GS) (V) (Test Condition)20 V(GS)off Min. (V) I(DSS) Max. (A)20m
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BFW10
BFW10 JFET
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Pilkor Resistor
Abstract: No abstract text available
Text: PILKOR components Bleeder resistors BR 0.5W / 1W FEATURES • Excellent anti-surge characteristics Stable characteristics to moisture resistance even in high resistance range. Good replacement for ceramic plate resistors. APPLICATIONS Telecommunication
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BR37L
500VDC
5000VRMS
8000VRMS
Pilkor Resistor
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Pilkor Resistor
Abstract: No abstract text available
Text: PILKOR components Bleeder resistors BR 0.5W / 1W FEATURES • Excellent anti-surge characteristics Stable characteristics to moisture resistance even in high resistance range. Good replacement for ceramic plate resistors. APPLICATIONS Telecommunication
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BR37L
Pilkor Resistor
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Untitled
Abstract: No abstract text available
Text: PILKOR components Bleeder resistors BR 0.5W/1W FEATURES • Excellent anti-surge characteristics Stable characteristics to moisture resistance even in high resistance range. Good replacement for ceramic plate resistors. APPLICATIONS Telecommunication
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BR37L
500VDC
5000VRMS
8000VRMS
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Pilkor Resistor
Abstract: No abstract text available
Text: PILKOR components Bleeder resistors BR 0.5W/1W FEATURES • Excellent anti-surge characteristics • Stable characteristics to moisture resistance even in high resistance range. • Good replacement for ceramic plate resistors. APPLICATIONS • Telecommunication
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BR37L
700VRMS
500VDC
5000VRMS
8000VRMS
Pilkor Resistor
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widerstandsnetzwerke
Abstract: AM457 AM467 AN1009 AN1011 AN1012 keramische
Text: Präzisionsverstärker für Brückenschaltungen AM467 PRINZIPIELLE FUNKTION Einstellbare Verstärkung differentiellen Eingangsspannungssignale 0 bis ±5mVFS bis zu 0 bis ±100mV FS in eine einstellbare, ratiometrische Ausgangsspannung von max. 0,2 und Vcc-0,2Volt
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AM467
100mV
AN1009
AN1011
AN1012
AM467
widerstandsnetzwerke
AM457
keramische
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P120
Abstract: ZXMP2120E5 ZXMP2120E5TA ZXMP2120G4 FS50D
Text: ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high
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ZXMP2120E5
-200V;
-122mA
OT223
ZXMP2120G4)
OT23-5
OT23-5
P120
ZXMP2120E5
ZXMP2120E5TA
ZXMP2120G4
FS50D
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ZXMP2120G4TA
Abstract: ZXMP2120G4TC ZXMP2120E5 ZXMP2120G4
Text: ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high
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ZXMP2120G4
-200V;
200mA
OT23-5
ZXMP2120E5)
OT223
OT223
ZXMP2120G4TA
ZXMP2120G4TC
ZXMP2120E5
ZXMP2120G4
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Untitled
Abstract: No abstract text available
Text: BCX71 ELECTRICAL CHARACTERISTICS at Tamb= 25°C unless otherwise stated . SYM B O L M IN . U N IT C O N D ITIO NS. C ollector-Em itter Breakdown Voltage PARAMETER V (BR)CEO -4 5 V lCE c f - 2 m A Emitter-Base Breakdown Voltage V(BR)EBO -5 V 'e b c t ' V A
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BCX71
BAY63
100kn
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