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    BQ401 Price and Stock

    Rochester Electronics LLC BQ4014MB-120

    IC NVSRAM 2MBIT PAR 32DIP MODULE
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    DigiKey BQ4014MB-120 Tube 5,693 10
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    Rochester Electronics LLC BQ4015YMA-85

    IC NVSRAM 4MBIT PAR 32DIP MODULE
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    DigiKey BQ4015YMA-85 Tube 3,785 7
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    BQ4015YMA-85 Tube 94 7
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    Rochester Electronics LLC BQ4010MA-200

    IC NVSRAM 64KBIT PARALLEL 28DIP
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    DigiKey BQ4010MA-200 Tube 2,342 18
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    BQ4010MA-200 Tube 1,788 18
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    Rochester Electronics LLC BQ4015YMA-70

    IC NVSRAM 4MBIT PAR 32DIP MODULE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BQ4015YMA-70 Tube 1,710 6
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    • 10 $57.9
    • 100 $57.9
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    Rochester Electronics LLC BQ4013MA-85

    IC NVSRAM 1MBIT PAR 32DIP MODULE
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    DigiKey BQ4013MA-85 Tube 743 11
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    Find more BQ401 price and stock on Findchips.com

    BQ401 Datasheets (390)

    Part ECAD Model Manufacturer Description Curated Type PDF
    bq4010 Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    BQ4010 Texas Instruments 8 k x 8 NONVOLATILE SRAM (5 V, 3.3 V) Original PDF
    BQ4010 Benchmarq 8Kx8 Nonvolatile SRAM Scan PDF
    BQ4010-150 Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    BQ4010-200 Benchmarq nvSRAM Original PDF
    BQ4010-70 Benchmarq nvSRAM Original PDF
    BQ4010-85 Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    BQ4010ly Texas Instruments 8 k x 8 NONVOLATILE SRAM (5 V, 3.3 V) Original PDF
    BQ4010LYEBZ-70N Texas Instruments BQ4010 - IC 8K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA28, DIP-28, Static RAM Original PDF
    BQ4010LYMA-70 Texas Instruments BQ4010LY - Texas Instruments BQ4010LYMA-70 Original PDF
    BQ4010LYMA-70N Texas Instruments 8Kx8 Nonvolatile SRAM, 3.3-V Input, 10% Voltage Tolerance 28-DIP MODULE -40 to 85 Original PDF
    bq4010MA-150 Texas Instruments 8k x 8 Nonvolatile SRAM Original PDF
    BQ4010MA-150 Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    BQ4010MA-150 Texas Instruments 8Kx8 Nonvolatile SRAM, 5% Voltage Tolerance 28-DIP MODULE 0 to 70 Original PDF
    bq4010MA-150 Texas Instruments NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP Module Original PDF
    BQ4010MA-150N Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    bq4010MA-200 Texas Instruments 8k x 8 Nonvolatile SRAM Original PDF
    bq4010MA-200 Texas Instruments NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP Module Original PDF
    BQ4010MA-200 Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    BQ4010MA-200 Texas Instruments 8Kx8 Nonvolatile SRAM, 5% Voltage Tolerance 28-DIP MODULE 0 to 70 Original PDF
    ...

    BQ401 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit

    UNITRODE

    Abstract: No abstract text available
    Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features ➤ Data retention in the absence of power ➤ Automatic write-protection during power-up/power-down cycles ➤ Industry-standard 32-pin 256K x 8 pinout ➤ Conventional SRAM operation; unlimited write cycles


    Original     		PDF bq4014/bq4014Y 32-pin 10-year 256Kx8 bq4014 152-bit UNITRODE

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4010/bq4010Y 28-pin 10-year bq4010 536-bit

    bq4010

    Abstract: bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y
    Text: Not Recommended For New Designs bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4010/Y/LY SLUS116A 28-Pin 536-bit bq4010 bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4010/bq4010Y bq4010 536-bit 28-pin 10-year

    Untitled

    Abstract: No abstract text available
    Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4010/Y/LY SLUS116A 28-Pin 536-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4014 is a nonvolatile 2,097,152-bit static RAM organized as 262,144 words by 8 bits. The integral control circuitry and lithium energy


    Original     		PDF bq4014/bq4014Y 256Kx8 bq4014 152-bit 32-pin 10-year

    bq4014

    Abstract: BQ4014MB-120 BQ4014MB-85 bq4014Y BQ4014YMB-85
    Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4014 is a nonvolatile 2,097,152-bit static RAM organized as 262,144 words by 8 bits. The integral control circuitry and lithium energy


    Original     		PDF bq4014/bq4014Y 256Kx8 bq4014 152-bit 32-pin 10-year BQ4014MB-120 BQ4014MB-85 bq4014Y BQ4014YMB-85

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4010/Y/LY SLUS116A 28-Pin 536-bit

    bq4013MA-120

    Abstract: bq4013Y bq4013YMA-120 bq4013
    Text: bq4013/Y 128Kx8 Nonvolatile SRAM Features General Description ➤ Data retention for at least 10 years without power The CMOS bq4013/Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    Original     		PDF bq4013/Y 128Kx8 576-bit 32-pin bq4013MA-120 bq4013Y bq4013YMA-120 bq4013

    bq4011

    Abstract: BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N benchmarq BQ4011YMA-70
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N benchmarq BQ4011YMA-70

    bq4010

    Abstract: bq4010Y bq4010YMA-85N
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010Y bq4010YMA-85N

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit

    Untitled

    Abstract: No abstract text available
    Text: OJ bq4014/bq4014Y UNITRODE- 256Kx8 Nonvolatile SRAM Features > Data retention in the absence of power > Automatic write-protection dur­ ing power-up/power-down cycles >• Industry-standard 32-pin 256K x 8 pinout >• Conventional SEAM operation; unlimited write cycles


    OCR Scan     		PDF bq4014/bq4014Y 256Kx8 bq4014 152-bit 256Kx

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq401 OY UNITRODE- 8Kx8 Nonvolatile SRAM Features General Description > D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4010/bq401 bq4010 536-bit bq4010YMA-70N bq4010-70 bq4010/bq4010Y bq401Q 150ns 200ns

    Untitled

    Abstract: No abstract text available
    Text: h bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description ► Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010YMA-85N -150N. bq4010

    Untitled

    Abstract: No abstract text available
    Text: BENCHMARQ_ bq4015/bq4015Y 512Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power >- Automatic write-protection during power-up/power-down cycles >• Industry-standard 32-pin 512K x 8 pinout >- Conventional SRAM operation;


    OCR Scan     		PDF bq4015/bq4015Y 512Kx8 32-pin bq4015 304-bit bq4015

    Untitled

    Abstract: No abstract text available
    Text: bq4013/bq4013Y BENCHMARQ 128Kx8 Nonvolatile SRAM Features General Description > Data retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The in teg ral control circuitry and lithium energy source provide reli­


    OCR Scan     		PDF bq4013/bq4013Y 128Kx8 bq4013 576-bit 32-pin 10-year

    Untitled

    Abstract: No abstract text available
    Text: Preliminary bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The inte­ gral control circuitry and lithium


    OCR Scan     		PDF bq4017/bq4017Y 2048Kx8 bq4017 216-bit bq4017 2048K

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y BENCHMARQ 32Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin 10-year bq4011YMA-150N bq4011

    Untitled

    Abstract: No abstract text available
    Text: BENCHHARÛ MICROELEC bflE D • 137afln 0Q01S11 TTS H B E N bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >■ D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral


    OCR Scan     		PDF 137afln 0Q01S11 bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010YMA-85N -150N.

    Untitled

    Abstract: No abstract text available
    Text: Advance Information Addendum b BENCHMARQ _ bq4011H/bq4011HY High-Speed 32Kx8 Nonvolatile SRAM Features General Description >• Acces^cycle tim es of 20 and 25 ns The CMOS bq4011H is a nonvolatile 2 6 2 ,1 4 4 -b it fa s t s ta tic RAM organized as 32,768 words by 8 bits.


    OCR Scan     		PDF bq4011H/bq4011HY 32Kx8 bq4011H 28-pin BO-41 bq4011H-20 bq4011H-25 bq4011HY