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    BPY 43 Search Results

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    Knowles Corporation 1808JA250102KXBPY2

    Multilayer Ceramic Capacitors MLCC - SMD/SMT Multi-Layered Ceramic Capacitor
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    BPY 43 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BPY43-1 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    BPY 43 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Bpy 43

    Abstract: foto transistor Y1112 GMOY6019 Q60215-Y1112 Q60215-Y1113 Q60215-Y5198 Q60215-Y62
    Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor BPY 62 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1130 nm • Hohe Linearität • Hermetisch dichte Metallbauform TO-18 mit Basisanschluß, geeignet bis 125 °C


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    Bpy 43

    Abstract: BP 103-3 SFH 225 FA BPX 43-3/4 SFH 309-3/4
    Text: SI-FOTODETEKTOREN SILICON PHOTODETECTORS 4. Fototransistoren 4. Phototransistors TA = 25 °C Package TA = 25 °C Type ϕ Radiant sensitive area deg. mm2 IPCE λ = 950 nm, Ee = 0.5 mW/cm2, VCE = 5 V VCEO λ10% mA V nm tr,tf (IC = 1 mA, VCC = 5 V, RL = 1 kΩ)


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    PDF Q62702-P3595 Q62702-P3593 Q62702-P999 Q62702-P3594 Q6270 Q62702-P1677 Q62702-1129 Q62702-P216 Q62702-P956 Q62702-P1671 Bpy 43 BP 103-3 SFH 225 FA BPX 43-3/4 SFH 309-3/4

    OHRD1938

    Abstract: Q62702-P784 Q62702-P787 Q62702-P790 Q62702-P96 Q62702-P98 BPY 62 SFH 960
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 400, SFH 401, SFH 402 SFH 400 SFH 401 SFH 402 Wesentliche Merkmale • Hergestellt im Schmelzepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an


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    PDF GEO06314 GET06091 GET06013 OHRD1938 Q62702-P784 Q62702-P787 Q62702-P790 Q62702-P96 Q62702-P98 BPY 62 SFH 960

    Q62702P0097

    Abstract: GEOY6314 OHRD1938 BPY 62
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead Pb Free Product - RoHS Compliant SFH 400 SFH 401 SFH 400 SFH 401 Wesentliche Merkmale Features • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an


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    diode SR 315

    Abstract: GEO06314 GET06013 GET06091 Q62703-Q1088 Q62703-Q1089 Q62703-Q1662 Q62703-Q1663 Q62703-Q1664 Q62703-Q1665
    Text: GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters (880 nm) welded 14.5 12.5 Chip position (2.7) 5.3 5.0 6.4 5.6 5.5 5.0 1 0.9 .1 ø5.6 ø5.3 GET06091 Radiant sensitive area 1.1 .9 1.1 0.9 ø4.8 ø4.6 ø0.45 glass lens Anode = SFH 481 Cathode = SFH 401


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    PDF GET06091 fet06091 fet06090 GEO06314 OHR00396 diode SR 315 GEO06314 GET06013 GET06091 Q62703-Q1088 Q62703-Q1089 Q62703-Q1662 Q62703-Q1663 Q62703-Q1664 Q62703-Q1665

    OHRD1938

    Abstract: No abstract text available
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead Pb Free Product - RoHS Compliant SFH 400, SFH 401,SFH 402 SFH 400 SFH 401 SFH 402 Wesentliche Merkmale Features • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an


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    BPX65

    Abstract: Q62702-P784 BPX osram BPX-65 sfh 291 tci 571 OHRD1938 Q62702-P787 Q62702-P790 Q62702-P96
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 400, SFH 401, SFH 402 SFH 400 SFH 401 SFH 402 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an


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    bpw 104

    Abstract: foto transistor k 4110 BPW 34 photo K 3505 transistor transistor 309 BPW 14 A IC 314 BP 104 FAS foto transistor
    Text: SI-FOTODETEKTOREN TYPENÜBERSICHT S -F I SILICON PHOTODETECTORS OTODETEKTOREN, OPTISCHE SENSOREN 1. Foto IC für Fernsteuerung SFH 5110 SUMMARY OF TYPES (S PHOTODETECTORS, OPTICAL SENSORS) 1. Photo IC for Remote Control SFH 5410 SFH 5111 2. Fotodetektoren in SMT


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    TRANSISTOR SMD MARKING CODE 3401

    Abstract: Q65110A6342 TRANSISTOR SMD MARKING CODE 702 fototransistor BPW 39 SFH415U sidelooker smd DIODE transistor smd 3401 SFH 4740 LPT80 BPY62
    Text: Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden 107 Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden. 111


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    PDF GEMY6050 TRANSISTOR SMD MARKING CODE 3401 Q65110A6342 TRANSISTOR SMD MARKING CODE 702 fototransistor BPW 39 SFH415U sidelooker smd DIODE transistor smd 3401 SFH 4740 LPT80 BPY62

    TRANSISTOR SMD MARKING CODE 3401

    Abstract: DIODE B-10 TRANSISTOR SMD MARKING CODE 702 TRANSISTOR SMD MARKING CODE r28 TRANSISTOR SMD MARKING CODE NM SFH4450 GEOY6969 SFH 4232 SFH 4740 702 transistor smd code
    Text: Infrared Components ge 88 - 92 107 108 Infrared Components Summary of Types Silicon Photodetectors For moreComponents Infrared detailed product Summary information of Types andSilicon technical Photodetectors datasheets, please visit http://catalog.osram-os.com


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    PDF GEXY6713 TRANSISTOR SMD MARKING CODE 3401 DIODE B-10 TRANSISTOR SMD MARKING CODE 702 TRANSISTOR SMD MARKING CODE r28 TRANSISTOR SMD MARKING CODE NM SFH4450 GEOY6969 SFH 4232 SFH 4740 702 transistor smd code

    MCR03EZHJ

    Abstract: KDS AT-49 grm188f11e104z GRM1882C1H100J GRM1882C1H GRM1882 at-49 30.000 16MCE226MB2TER grm188f11e MCR03EZHF
    Text: ユーザーズ・マニュアル(暫定) ET-0170 µPD720133(USB2.0 - IDE ブリッジ)評価ボード 資料番号 発行年月 S17123JJ1V0UM00(第 1 版) March 2004 NS CP N 2004 〔メ 2 モ〕 ユーザーズ・マニュアル(暫定) S17123JJ1V0UM


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    PDF ET-0170 PD720133USB2 S17123JJ1V0UM00 S17123JJ1V0UM M5A02 MCR03EZHJ KDS AT-49 grm188f11e104z GRM1882C1H100J GRM1882C1H GRM1882 at-49 30.000 16MCE226MB2TER grm188f11e MCR03EZHF

    isl 6251 schematic

    Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
    Text: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.


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    PDF Q62702-A772 Q62702-A731 Q62702-A773 OT-23 isl 6251 schematic smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Application Note Document Number: AN4246 Rev. 3, 04/2013 Calibrating an eCompass in the Presence of Hard and Soft-Iron Interference by: Talat Ozyagcilar Applications Engineer 1 Introduction Contents 11 This application note provides the theory for the in-situ


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    PDF AN4246 AN4248 AN4247

    SFH Siemens

    Abstract: No abstract text available
    Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 400 SFH 401 SFH 402 Cathode SFH 480 Anode (SFH 216, SFH 231 SFH 400) Chip position Radiant Sensitive area o o (O o O) GE006314 : SFH 481 Anode Cathode : SFH 401 O ) o (O o Chip position (2.7) Radiant sensitive area


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    PDF GE006314 GET06013 OHRD1937 SFH Siemens

    SFH Siemens

    Abstract: No abstract text available
    Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Chip position 2.7 SFH 400 SFH 401 SFH 402 Cathode (SFH 480 Anode (SFH 216, SFH 231, SFH 400) Radiant Sensitive area 00.45 i -L 5.3 5.0 7.4 GE006314 O Oí o o (O 6.6 Approx. weight 0.5 g Anode = SFH 481


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    PDF GE006314 GET06091 SFH401 SFH Siemens

    diode SR 315

    Abstract: BPX65 high sensitive
    Text: SIEM ENS GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters (880 nm) Chip position (2.7) Cathode (SFH 480) Anode (SFH 216, SFH 231, SFH 400) SFH 480 SFH 481 SFH 482 Radiant Sensitive area L GE006314 o a > o (O o Approx. weight 0.5 g Anode = SFH 481


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    PDF E006314 GET06091 GET06013 BPX65) diode SR 315 BPX65 high sensitive

    AP 4812

    Abstract: No abstract text available
    Text: SIEMENS GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters (880 nm) S * ' Anode = SFH 4 8 0 C a th o d e = SFH 4 0 0 SFH 480 SFH 481 SFH 482 (p a cka g e ) 1 4 .5 1 2 .5 ' A p p r o x . w e ig h t 0 . 3 5 g Anode = C a th o d e = 2 .7 0 0 .4 5 - • - C h ip


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    PDF a23SbOS AP 4812

    BPW45

    Abstract: BPW45b-1270 3PW45 BGG456 Socket 456
    Text: 6 7 5 2 THE DRAWINGS AND INFORMATION CONTAINED H EREIN ARE THE EXCLUSIV E P R O PE R TY OF ACTEL. THE INFORMATION, DRAWINGS AND D ESIG N CO N CEPTS CONTAINED H ER EIN ARE CO N FID EN TIA L/PRO PR IETA RY , SHALL B E MAINTAINED IN STRICT CONFIDENCE, AND SHALL NOT B E R ELEA SED TO ANY THIRD PARTY WITHOUT THE E X P R E S S


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    PDF 456-lS-09705-2bABA\BPW0456-lS-09705-2bABA 3PW456-1270-26AB55 BGG456, BG456 BGG456 BPW45b-1270-2bAB55 7E-BGG45E BPW45 BPW45b-1270 3PW45 Socket 456

    bpx28

    Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
    Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten


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    A209K

    Abstract: 1pm05 tda 7812 KA213A KP303D B342D sft353 GL 7812 u 711 service-mitteilungen
    Text: SERVICE-MITTEILUNGEN VEB IN D US TR IEV E R TR IE B R U N D F U N K U N D FERNSEHEN jf jl f j= = Ì 3 I ra d io - television AUSGABE: 1985 3 S e ite 1 - 4 Ü b e r s i c h t über d ie w ic h tig s te n H a lb le ite r Stand* A p ril 1985 Die in den S e rv ic e -M itte ilu n g e n N r. 3 /8 2 v e r ö f f e n t l ic h t e Über­


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    TIL78

    Abstract: MRD100 FSP165 BSW11 rt930 2N577 BC198A BFY47 10G1051 D10B1055
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; BVCBO-15V; TIL78 MRD100 FSP165 BSW11 rt930 2N577 BC198A BFY47 10G1051 D10B1055

    TIL78

    Abstract: 2SA124 SMT102 2sa123 2sa155 AF101 2N534 MA520 maa 550 TF65
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; BVCBO-15V; TIL78 2SA124 SMT102 2sa123 2sa155 AF101 2N534 MA520 maa 550 TF65

    Untitled

    Abstract: No abstract text available
    Text: rZ 7 Ä 7# S G S -T H O M S O N TS68483 HMOS2 ADVANCED GRAPHIC AND ALPHANUMERIC CONTROLLER • FULLY PROGRAMMABLE TIMING GENE­ RATOR ■ ALPHANUMERIC AND GRAPHIC DRAWING CAPABILITY ■ EASY TO USE AND POWERFUL COMMAND SET: . VECTOR, ARC, CIRCLE WITH DOT OR


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    PDF TS68483 TS68483CFN TS68483CP15 TS68483CP18

    Untitled

    Abstract: No abstract text available
    Text: DATA S H E E T MAY 1999 Revision 2.4 LXT441 Switched 56/DDS Integrated DSU/CSU General Description The LXT441 is an integrated transceiver and data formatter for Switched 56 SW 56 and Digital Data Service (D D S) Data Service Unit/Channel Service Unit (D SU/CSU)


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    PDF LXT441 56/DDS LXT441 LXT441PE 44-Pin LXT441PE