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    SFH 350 V

    Abstract: GEO06314 GET06013 GET06091 Q62702-P784 Q62702-P786 Q62702-P787 Q62702-P790 Q62702-P96 Q62702-P98
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 5.3 14.5 5.0 12.5 7.4 6.6 Approx. weight 0.5 g Chip position ø4.8 ø4.6 2.54 mm spacing welded 14.5 12.5 5.3 5.0 6.4 5.6 Anode = SFH 481 Cathode = SFH 401 package 1.1 .9 1 0.9 .1 ø5.6 ø5.3 glass lens GET06091


    Original     		PDF GET06091 fet06091 GEO06314 fet06090 OHR00395 OHR01937 SFH 350 V GEO06314 GET06013 GET06091 Q62702-P784 Q62702-P786 Q62702-P787 Q62702-P790 Q62702-P96 Q62702-P98

    GEO06314

    Abstract: GET06013 GET06091 Q62702-P784 Q62702-P786 Q62702-P787 Q62702-P790 Q62702-P96 Q62702-P98 BPY 62
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 5.3 14.5 5.0 12.5 7.4 6.6 Approx. weight 0.5 g Chip position ø4.8 ø4.6 2.54 mm spacing welded 14.5 12.5 5.3 5.0 6.4 5.6 Anode = SFH 481 Cathode = SFH 401 package 1.1 .9 1 0.9 .1 ø5.6 ø5.3 glass lens GET06091


    Original     		PDF GET06091 fet06091 GEO06314 fet06090 OHR01040 OHR01937 GEO06314 GET06013 GET06091 Q62702-P784 Q62702-P786 Q62702-P787 Q62702-P790 Q62702-P96 Q62702-P98 BPY 62

    diode SR 315

    Abstract: GEO06314 GET06013 GET06091 Q62703-Q1088 Q62703-Q1089 Q62703-Q1662 Q62703-Q1663 Q62703-Q1664 Q62703-Q1665
    Text: GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters (880 nm) welded 14.5 12.5 Chip position (2.7) 5.3 5.0 6.4 5.6 5.5 5.0 1 0.9 .1 ø5.6 ø5.3 GET06091 Radiant sensitive area 1.1 .9 1.1 0.9 ø4.8 ø4.6 ø0.45 glass lens Anode = SFH 481 Cathode = SFH 401


    Original     		PDF GET06091 fet06091 fet06090 GEO06314 OHR00396 diode SR 315 GEO06314 GET06013 GET06091 Q62703-Q1088 Q62703-Q1089 Q62703-Q1662 Q62703-Q1663 Q62703-Q1664 Q62703-Q1665

    OHRD1938

    Abstract: Q62702-P784 Q62702-P787 Q62702-P790 Q62702-P96 Q62702-P98 BPY 62 SFH 960
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 400, SFH 401, SFH 402 SFH 400 SFH 401 SFH 402 Wesentliche Merkmale • Hergestellt im Schmelzepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an


    Original     		PDF GEO06314 GET06091 GET06013 OHRD1938 Q62702-P784 Q62702-P787 Q62702-P790 Q62702-P96 Q62702-P98 BPY 62 SFH 960

    GEO06314

    Abstract: GET06013 GET06091 Q62703-Q1088 Q62703-Q1089 Q62703-Q1662 Q62703-Q1663 Q62703-Q1664 Q62703-Q1665 Q62703-Q1667
    Text: GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters (880 nm) 5.3 14.5 5.0 12.5 7.4 6.6 Approx. weight 0.5 g ø4.8 ø4.6 2.54 mm spacing Chip position welded 14.5 12.5 5.3 5.0 6.4 5.6 glass lens Anode = SFH 481 Cathode = SFH 401 (package) 1.1 .9 1


    Original     		PDF GET06091 fet06091 GEO06314 fet06090 OHR00881 OHR00948 GEO06314 GET06013 GET06091 Q62703-Q1088 Q62703-Q1089 Q62703-Q1662 Q62703-Q1663 Q62703-Q1664 Q62703-Q1665 Q62703-Q1667

    Q62703-Q4752

    Abstract: diode 482 diode SR 315 Q62703-Q1088 Q62703-Q1089 Q62703-Q1662 Q62703-Q1665 Q62703-Q1668 SFH480 Q62703Q1087
    Text: GaAlAs-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters (880 nm) SFH 480, SFH 481, SFH 482 SFH 480 SFH 481 SFH 482 Wesentliche Merkmale • Hergestellt im Schmezepitaxieverfahren • Anode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit


    Original     		PDF GEO06314 GET06091 GET06013 Q62703-Q4752 diode 482 diode SR 315 Q62703-Q1088 Q62703-Q1089 Q62703-Q1662 Q62703-Q1665 Q62703-Q1668 SFH480 Q62703Q1087

    IR photodetectors

    Abstract: diode SR 315 E7800 GEO06314 GET06013 GET06091 Q62703-Q1088 Q62703-Q1089 Q62703-Q1662 Q62703-Q1663
    Text: GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters (880 nm) 5.3 14.5 5.0 12.5 7.4 6.6 Approx. weight 0.5 g ø4.8 ø4.6 2.54 mm spacing Chip position welded 14.5 12.5 5.3 5.0 6.4 5.6 glass lens Anode = SFH 481 Cathode = SFH 401 (package) 1.1 .9 1


    Original     		PDF GET06091 fet06091 GEO06314 fet06090 OHR00881 OHR00948 OHR00396 IR photodetectors diode SR 315 E7800 GEO06314 GET06013 GET06091 Q62703-Q1088 Q62703-Q1089 Q62703-Q1662 Q62703-Q1663

    diode SR 315

    Abstract: BPX65 high sensitive
    Text: SIEM ENS GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters (880 nm) Chip position (2.7) Cathode (SFH 480) Anode (SFH 216, SFH 231, SFH 400) SFH 480 SFH 481 SFH 482 Radiant Sensitive area L GE006314 o a > o (O o Approx. weight 0.5 g Anode = SFH 481


    OCR Scan     		PDF E006314 GET06091 GET06013 BPX65) diode SR 315 BPX65 high sensitive

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters (880 nm) Cathode (SFH 480) Anode (SFH 216, SFH 231 SFH 400) Chip position SFH 480 SFH 481 SFH 482 Radiant Sensitive area o O) o CO o GE006314 2.7 Chip position 00.45 Anode = SFH 481 Cathode = SFH 401


    OCR Scan     		PDF GE006314 GET06091 GET06013 OHR00881

    SFH Siemens

    Abstract: No abstract text available
    Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Chip position 2.7 SFH 400 SFH 401 SFH 402 Cathode (SFH 480 Anode (SFH 216, SFH 231, SFH 400) Radiant Sensitive area 00.45 i -L 5.3 5.0 7.4 GE006314 O Oí o o (O 6.6 Approx. weight 0.5 g Anode = SFH 481


    OCR Scan     		PDF GE006314 GET06091 SFH401 SFH Siemens