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    Untitled

    Abstract: No abstract text available
    Text: ¿¿F” MPSA12 1 The M PSA12 i s d e s ig n e d r e q u ir in g fo r NPN s i l i c o n p r e a m p lifie r in p u t im p e d an ce d a r lin g t o n in p u t of NPN S IL IC O N DARLINGTON TRAN SISTO R TO-92 tr a n s is to r a p p lic a tio n s s e v e r a l megohms.


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    PDF MPSA12 PSA12 500mA 625mW 100KHz Boxt9477, 3-898M4

    BF397

    Abstract: No abstract text available
    Text: BF397 SSî! WíSs. PNP SILICON TRANSISTOR T O -9 2 F BF397 is PNP silicon transistor designed for high voltage applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage VCBO 90V VCEO 90V 6V 625mW 100mA VE BO Ptot Emitter-Base Voltage


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    PDF BF397 BF397 O-92F 625mW 100mA 10jiA 100mA Boxi9477,

    Untitled

    Abstract: No abstract text available
    Text: PN2483, PN2484 LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS FEATURES APPLICATIONS • High Breakdown Voltage BV^-gg . . . 6 0 V • Low Level, 'Low Noise Am plifier • High Gain hpg . . . 2 0 0 @ 500m>A ■ Audio Through High Frequency Ranges • Low Noise N.F. . . . 3 dB


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    PDF PN2483, PN2484 O-92A N2484 BOXt9477

    Untitled

    Abstract: No abstract text available
    Text: M BF397 PNP SILICON TRANSISTOR T O -9 2 F BF397 is PNP silicon transistor designed for high voltage applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage VCBO 90V VCEO 90V 6V 625mW 100mA VE BO Ptot Emitter-Base Voltage Total Power Dissipation


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    PDF BF397 BF397 625mW 100mA 10jiA 100uA 100mA Boxt9477,

    Untitled

    Abstract: No abstract text available
    Text: PN2483, PN2484 LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS FEATURES APPLICATIONS • High Breakdown Voltage BV^-^q . . . 6 0 V • Low Level, 'Low Noise Amplifier • High Gain hpg . . . 2 0 0 @ 500m>A MECHANICAL OUTLINE TO-92A ■ Audio Through High Frequency Ranges


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    PDF PN2483, PN2484 O-92A N2484 BOXt9477 8-e98EM

    Untitled

    Abstract: No abstract text available
    Text: BFX85 NPN SILICON TRANSISTOR TO-39 The BFX85 is NPN silicon planar epitaxial transistor designed for medium power amplifiers and switching applications where high voltage and high current are required. ciUKJ in ABSOLUTE MAXIMUM RATINGS 100V 60V 6V 1A 800mW


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    PDF BFX85 BFX85 800mW 150mA 500mA 100mA* 20MHz

    bc536

    Abstract: bc537
    Text: BC 537 • BC 538 NPN SILICON AF MEDIUM POWER TRANSISTORS -s- -i 4; jé . THE BC537» BC538 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC537, BC538 ARE COM­ PLEMENTARY TO THE PNP TYPE BC527, BC528


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    PDF BC537Â BC538 BC537, BC527, BC528 O-92A BC537 BC536 100mA bc536 bc537

    2N2222

    Abstract: FN2222 2n2222 micro electronics pn2222 2n2222 FN2222A PN2222A le tr 2n2222 PN2907 T092 2N2222-PN2222
    Text: THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY. THE 2N2222, 2N2222A ARE PACKED IN TO-18.


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    PDF 2N2222 PN2222 2N2222A PN2222A 2N2222, 2N2222A, PN2222, 2N2907, 2N2907A, FN2222 2n2222 micro electronics pn2222 2n2222 FN2222A PN2222A le tr 2n2222 PN2907 T092 2N2222-PN2222

    E3510

    Abstract: N248 30MHZ PN2483 PN2484
    Text: PN2483, PN2484 LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS FEATURES A P PLICA TIO N S • High Breakdown Voltage BV^-gQ . . . 60V • Low Level,'Low Noise Amplifier • High Gain hpg . . . 2 0 0 @ 500m>A ■ Audio Through High Frequency Ranges • Low Noise N.F. . . . 3 dB


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    PDF PN2483, PN2484 O-92A N2484 50J/A, 30MHZ BOXt9477 E3510 N248 PN2483 PN2484

    Untitled

    Abstract: No abstract text available
    Text: PN3641 PN3642 PN3643 NPN SILICON TRANSISTORS TO-92A PN3641, PN3642 & PN3643 are NPN silicon planar transistors designed for small signal general purpose amplifiers and switches. EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage


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    PDF PN3641 PN3642 PN3643 O-92A PN3641, PN3643

    BC537

    Abstract: BC538 BC527 BC528
    Text: BC 537 • BC 538 NPN SILICON AF MEDIUM POWER TRANSISTORS THE BC537, BC538 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC537, BC538 ARE COM­ PLEMENTARY TO THE PNP TYPE BC527, BC528


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    PDF BC537, BC538 BC527, BC528 O-92A BC537 100mA BC527

    100khz 5v transistor npn

    Abstract: MPSA12
    Text: NPN S IL IC O N DARLINGTON TRAN SISTO R The M PSA12 i s d e s ig n e d r e q u ir in g fo r NPN s i l i c o n p r e a m p lifie r in p u t im p e d an ce d a r lin g t o n in p u t of TO-92 tr a n s is to r a p p lic a tio n s s e v e r a l megohms. ABSO LU TE MAXIMUM RATIN GS


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    PDF MPSA12 500mA 625mW 100pA 100KHz 100khz 5v transistor npn