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    BLF8G20 Price and Stock

    Rochester Electronics LLC BLF8G20LS-230VJ

    RF MOSFET LDMOS 28V CDFM6
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    DigiKey BLF8G20LS-230VJ Bulk 144 5
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    Rochester Electronics LLC BLF8G20LS-400PVJ

    RF MOSFET LDMOS 28V CDFM8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BLF8G20LS-400PVJ Bulk 130 4
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    Rochester Electronics LLC BLF8G20LS-400PVU

    RF MOSFET LDMOS 28V CDFM8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BLF8G20LS-400PVU Bulk 80 4
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    Rochester Electronics LLC BLF8G20LS-230VU

    RF MOSFET LDMOS 28V CDFM6
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    DigiKey BLF8G20LS-230VU Bulk 60 5
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    Rochester Electronics LLC BLF8G20LS-200V,112

    RF MOSFET LDMOS 28V LDMOST
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BLF8G20LS-200V,112 Bulk 60 5
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    Find more BLF8G20 price and stock on Findchips.com

    BLF8G20 Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLF8G20LS-140GVJ Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.5DB SOT1244B Original PDF
    BLF8G20LS-140GVQ Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.5DB SOT1244B Original PDF
    BLF8G20LS-140VJ Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.5DB SOT1244B Original PDF
    BLF8G20LS-140VU Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.5DB SOT1244B Original PDF
    BLF8G20LS-160VJ NXP Semiconductors RF FETs, Discrete Semiconductor Products, TRANS RF 160W LDMOS CDFM6 Original PDF
    BLF8G20LS-160VU NXP Semiconductors RF FETs, Discrete Semiconductor Products, TRANS RF 160W LDMOS CDFM6 Original PDF
    BLF8G20LS-200V Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET Original PDF
    BLF8G20LS-200V NXP Semiconductors Extended video bandwidth with Doherty efficiency Original PDF
    BLF8G20LS-200V NXP Semiconductors Power LDMOS transistor Original PDF
    BLF8G20LS-200V,112 NXP Semiconductors BLF8G20LS-200V - BLF8G20LS-200V - Power LDMOS transistor Original PDF
    BLF8G20LS-200V,115 NXP Semiconductors BLF8G20LS-200V - BLF8G20LS-200V - Power LDMOS transistor Original PDF
    BLF8G20LS-200V,118 NXP Semiconductors BLF8G20LS-200V - BLF8G20LS-200V - Power LDMOS transistor Original PDF
    BLF8G20LS-220 NXP Semiconductors Power LDMOS transistor Original PDF
    BLF8G20LS-220J NXP Semiconductors BLF8G20LS-220 - BLF8G20LS-220 - Power LDMOS transistor Original PDF
    BLF8G20LS-220U NXP Semiconductors BLF8G20LS-220 - BLF8G20LS-220 - Power LDMOS transistor Original PDF
    BLF8G20LS-230V NXP Semiconductors Power LDMOS transistor Original PDF
    BLF8G20LS-230VJ Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18DB SOT1239B Original PDF
    BLF8G20LS-230VJ NXP Semiconductors BLF8G20LS-230V - BLF8G20LS-230V - Power LDMOS transistor Original PDF
    BLF8G20LS-230VJ NXP Semiconductors RF FETs, Discrete Semiconductor Products, TRANS RF 230W LDMOS CDFM6 Original PDF
    BLF8G20LS-230VU Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18DB SOT1239B Original PDF

    BLF8G20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BLF8G20LS-210V; BLF8G20LS-210GV Power LDMOS transistor Rev. 1 — 25 February 2014 Objective data sheet 1. Product profile 1.1 General description 210 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1990 MHz.


    Original     		PDF BLF8G20LS-210V; BLF8G20LS-210GV BLF8G20LS-210V 20LS-210GV

    Untitled

    Abstract: No abstract text available
    Text: BLF8G20LS-160V Power LDMOS transistor Rev. 2 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1.


    Original     		PDF BLF8G20LS-160V

    RO4350B max current

    Abstract: No abstract text available
    Text: BLF8G20LS-200V Power LDMOS transistor Rev. 1 — 4 July 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF8G20LS-200V RO4350B max current

    Untitled

    Abstract: No abstract text available
    Text: BLF8G20LS-260A Power LDMOS transistor Rev. 2 — 9 November 2012 Preliminary data sheet 1. Product profile 1.1 General description 260 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.


    Original     		PDF BLF8G20LS-260A

    J37 transistor

    Abstract: No abstract text available
    Text: BLF8G20LS-260A Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1.


    Original     		PDF BLF8G20LS-260A J37 transistor

    Untitled

    Abstract: No abstract text available
    Text: BLF8G20LS-200V Power LDMOS transistor Rev. 1 — 4 July 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF8G20LS-200V

    Untitled

    Abstract: No abstract text available
    Text: BLF8G20LS-200V Power LDMOS transistor Rev. 3 — 21 January 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.


    Original     		PDF BLF8G20LS-200V

    Untitled

    Abstract: No abstract text available
    Text: BLF8G20LS-220 Power LDMOS transistor Rev. 1 — 7 March 2013 Objective data sheet 1. Product profile 1.1 General description 220 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF8G20LS-220

    transistor TO-220 Outline Dimensions

    Abstract: No abstract text available
    Text: BLF8G20LS-220 Power LDMOS transistor Rev. 2 — 30 May 2013 Product data sheet 1. Product profile 1.1 General description 220 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF8G20LS-220 transistor TO-220 Outline Dimensions

    Untitled

    Abstract: No abstract text available
    Text: BLF8G20LS-140V; BLF8G20LS-140GV Power LDMOS transistor Rev. 1 — 7 February 2014 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1990 MHz.


    Original     		PDF BLF8G20LS-140V; BLF8G20LS-140GV BLF8G20LS-140V 20LS-140GV

    Untitled

    Abstract: No abstract text available
    Text: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 1 — 6 June 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.


    Original     		PDF BLF8G20LS-400PV; BLF8G20LS-400PGV BLF8G20LS-400PV LS-400PGV

    Bv 42 transistor

    Abstract: No abstract text available
    Text: BLF8G20LS-200V Power LDMOS transistor Rev. 2 — 12 October 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.


    Original     		PDF BLF8G20LS-200V Bv 42 transistor

    Untitled

    Abstract: No abstract text available
    Text: BLF8G20LS-200V Power LDMOS transistor Rev. 4 — 21 October 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.


    Original     		PDF BLF8G20LS-200V

    transistor f1 j39

    Abstract: F1 J37 BLF8G20LS-260A transistor 746
    Text: BLF8G20LS-260A Power LDMOS transistor Rev. 3 — 1 May 2013 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1.


    Original     		PDF BLF8G20LS-260A transistor f1 j39 F1 J37 BLF8G20LS-260A transistor 746

    Untitled

    Abstract: No abstract text available
    Text: BLF8G20LS-230V Power LDMOS transistor Rev. 1 — 7 November 2013 Preliminary data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.


    Original     		PDF BLF8G20LS-230V

    Untitled

    Abstract: No abstract text available
    Text: BLF8G20LS-230V Power LDMOS transistor Rev. 2 — 21 February 2014 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.


    Original     		PDF BLF8G20LS-230V

    transistor SMD g 28

    Abstract: No abstract text available
    Text: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 3 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.


    Original     		PDF BLF8G20LS-400PV; BLF8G20LS-400PGV BLF8G20LS-400PV LS-400PGV transistor SMD g 28

    Untitled

    Abstract: No abstract text available
    Text: BLF8G20LS-160V Power LDMOS transistor Rev. 1 — 5 March 2014 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.


    Original     		PDF BLF8G20LS-160V

    BLF8G20LS-260A

    Abstract: ATC800B blf8g20 X3C19
    Text: BLF8G20LS-260A Power LDMOS transistor Rev. 1 — 13 September 2012 Objective data sheet 1. Product profile 1.1 General description 260 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.


    Original     		PDF BLF8G20LS-260A BLF8G20LS-260A ATC800B blf8g20 X3C19

    Untitled

    Abstract: No abstract text available
    Text: Enabling the Mobile Experience High Performance RF for wireless infrastructure Unleash the performance of your RF and microwave designs www.nxp.com/unleash-rf Enabling the Mobile Experience The future is mobile. And mobility means the freedom to innovate, communicate, connect and win.


    Original     		PDF

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: NXP Gen8 ceramic LDMOS power transistors with video bandwidth Extended video bandwidth with Doherty efficiency Perfect for today’s multi-mode, multi-carrier base stations, within NXP’s range of Gen8 final-stage broadband amplifiers there is a dedicated family that delivers extended video bandwidth in


    Original     		PDF BLF8G27LS-150 OT1244

    BA 7891 NG

    Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
    Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进


    Original     		PDF PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104

    BLF188XRS

    Abstract: BLF574XR,112
    Text: Updated: 26-Nov-13 RF Power Model Overview Type Number ADS Model ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600 BLC8G24LS-240AV BLC8G27LS-160AV BLC8G27LS-240AV BLD6G22L-50 BLD6G22LS-50 BLF1043 BLF1046 BLF145 BLF147 BLF174XR


    Original     		PDF 26-Nov-13 ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600 BLC8G24LS-240AV BLC8G27LS-160AV BLC8G27LS-240AV BLF188XRS BLF574XR,112