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    BLA1011 Search Results

    BLA1011 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-2 Rochester Electronics LLC BLA1011-2 - N-Channel LDMOS Avionics LDMOS Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    BLA1011-300 Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    BLA1011-10 Rochester Electronics LLC BLA1011-10 - N-Channel LDMOS Avionics LDMOS Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
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    BLA1011 Price and Stock

    Rochester Electronics LLC BLA1011-300

    RF MOSFET LDMOS 32V LDMOST
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    DigiKey BLA1011-300 Bulk 523 1
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    BLA1011-300 Bulk 110 1
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    Avnet Americas BLA1011-300 Tube 4 Weeks 2
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    Rochester Electronics BLA1011-300 110 1
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    Rochester Electronics LLC BLA1011-10

    RF MOSFET LDMOS 36V SOT467C
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    DigiKey BLA1011-10 Bulk 3
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    Avnet Americas BLA1011-10 Tube 4 Weeks 3
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    Rochester Electronics LLC BLA1011-200

    RF MOSFET LDMOS 36V SOT502A
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    DigiKey BLA1011-200 Bulk 1
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    Avnet Americas BLA1011-200 Tray 4 Weeks 1
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    Ampleon BLA1011-2,112

    RF MOSFET LDMOS 36V 2CSMD
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    Rochester Electronics LLC BLA1011-2,112

    RF MOSFET
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    DigiKey BLA1011-2,112 Tray 4
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    BLA1011 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BLA1011-10 NXP Semiconductors Avionics LDMOS transistor - Application: Avionics - TCAS, IFF, Mod-S ; Description: Avionics LDMOS RF POWER Transistor ; Duty cycle: 1 %; Efficiency: 50 %; Frequency: 1030 - 1090 MHz; Load power: 10 W; Operating voltage: 36 VDC; Power gain: 18 dB; Pulse width: 50 us Original PDF
    BLA1011-10 Philips Semiconductors Avionics LDMOS Transistor Original PDF
    BLA1011-10,112 NXP Semiconductors Avionics LDMOS transistor - Application: Avionics - TCAS, IFF, Mod-S ; Description: Avionics LDMOS RF POWER Transistor ; Duty cycle: 1 %; Efficiency: 50 %; Frequency: 1030 - 1090 MHz; Load power: 10 W; Operating voltage: 36 VDC; Power gain: 18 dB; Pulse width: 50 us; Package: SOT467C (LDMOST); Container: Blister pack Original PDF
    BLA1011-2 NXP Semiconductors BLA1011-2 - TRANSISTOR L BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-3, FET RF Power Original PDF
    BLA1011-2 NXP Semiconductors Avionics LDMOS transistor - Application: Avionics - TCAS, IFF, Mod-S ; Description: Avionics LDMOS RF POWER Transistor ; Duty cycle: 1 %; Efficiency: 50 %; Frequency: 1030 - 1090 MHz; Load power: 2 W; Operating voltage: 36 VDC; Power gain: 18 dB; Pulse width: 50 us Original PDF
    BLA1011-2 Philips Semiconductors Avionics LDMOS Transistor Original PDF
    BLA1011-2,112 Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 75V 16DB SOT538A Original PDF
    BLA1011-200 NXP Semiconductors Avionics LDMOS transistor - Application: Avionics - TCAS, IFF, Mod-S ; Description: Avionics LDMOS RF POWER Transistor ; Duty cycle: 2 %; Efficiency: 50 %; Frequency: 1030 - 1090 MHz; Load power: 200 W; Operating voltage: 36 VDC; Power gain: 15 dB; Pulse width: 50 us Original PDF
    BLA1011-200 Philips Semiconductors Avionics LDMOS transistor Original PDF
    BLA1011-200 Philips Semiconductors Avionics LDMOS Transistor Original PDF
    BLA1011-200 Philips Semiconductors Avionics LDMOS transistor Original PDF
    BLA1011-200,112 NXP Semiconductors Avionics LDMOS transistor - Application: Avionics - TCAS, IFF, Mod-S ; Description: Avionics LDMOS RF POWER Transistor ; Duty cycle: 2 %; Efficiency: 50 %; Frequency: 1030 - 1090 MHz; Load power: 200 W; Operating voltage: 36 VDC; Power gain: 15 dB; Pulse width: 50 us; Package: SOT502A (LDMOST); Container: Blister pack Original PDF
    BLA1011-200R NXP Semiconductors Avionics LDMOS transistors Original PDF
    BLA1011-200R,112 NXP Semiconductors BLA1011-200R - Avionics LDMOS transistor, SOT502A Package, Standard Marking, ICS Tube - DSC Bulk Pack Original PDF
    BLA1011-2,112 NXP Semiconductors BLA1011-2 - TRANSISTOR L BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-3, FET RF Power Original PDF
    BLA1011-2,112 NXP Semiconductors Avionics LDMOS transistor - Application: Avionics - TCAS, IFF, Mod-S ; Description: Avionics LDMOS RF POWER Transistor ; Duty cycle: 1 %; Efficiency: 50 %; Frequency: 1030 - 1090 MHz; Load power: 2 W; Operating voltage: 36 VDC; Power gain: 18 dB; Pulse width: 50 us; Package: SOT538A (CDIP2); Container: Blister pack Original PDF
    BLA1011-300 NXP Semiconductors Avionics LDMOS transistors - Application: Avionics - TCAS, IFF, Mod-S ; Description: Avionics LDMOS RF POWER Transistor ; Duty cycle: 2 %; Efficiency: 57 %; Frequency band: 1030-1090 GHz; Operating voltage: 32 VDC; Output power: 300 W; Package material: SOT957A ; Power gain: 16.5 dB Original PDF
    BLA1011-300 Philips Semiconductors Avionics LDMOS transistors Original PDF
    BLA1011-300,112 NXP Semiconductors Avionics LDMOS transistors - Application: Avionics - TCAS, IFF, Mod-S ; Description: Avionics LDMOS RF POWER Transistor ; Duty cycle: 2 %; Efficiency: 57 %; Frequency band: 1030-1090 GHz; Operating voltage: 32 VDC; Output power: 300 W; Package material: SOT957A ; Power gain: 16.5 dB; Package: SOT957A (LDMOST); Container: Bulk Pack Original PDF
    BLA1011S-200 Philips Semiconductors Transistor Mosfet N-CH 75V 3SOT-502A BULK Original PDF

    BLA1011 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLA1011-10

    Abstract: 200B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLA1011-10 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 FEATURES PINNING - SOT467C • High power gain


    Original     		PDF M3D381 BLA1011-10 OT467C SCA75 R77/05/pp9 BLA1011-10 200B

    Untitled

    Abstract: No abstract text available
    Text: BLA1011-200; BLA1011S-200 Avionics LDMOS transistor Rev. 08 — 26 October 2005 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1:


    Original     		PDF BLA1011-200; BLA1011S-200

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2000 Nov 21 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain


    Original     		PDF M3D379 BLA1011-200 OT502A) BLA1011-200 OT502A

    multilayer ceramic capacitor philips

    Abstract: BLA1011-200
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Product specification Supersedes data of 2001 Apr 17 2001 May 15 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A


    Original     		PDF M3D379 BLA1011-200 OT502A 613524/05/pp12 multilayer ceramic capacitor philips BLA1011-200

    S 1040 smd

    Abstract: multilayer ceramic capacitor philips 200B BLA1011-2 MGU487
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2001 Jun 07 2001 Nov 05 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 FEATURES PINNING - SOT538A


    Original     		PDF M3D438 BLA1011-2 OT538A SCA73 613524/02/pp8 S 1040 smd multilayer ceramic capacitor philips 200B BLA1011-2 MGU487

    200B

    Abstract: BLA1011-10
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLA1011-10 Avionics LDMOS transistor Product specification Supersedes data of 2002 Jun 17 2002 Oct 02 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 FEATURES PINNING - SOT467C • High power gain


    Original     		PDF M3D381 BLA1011-10 OT467C SCA74 613524/04/pp8 200B BLA1011-10

    SMD0508

    Abstract: BLA1011-200
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Product specification Supersedes data of 2002 Mar 18 2003 Nov 11 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A


    Original     		PDF M3D379 BLA1011-200 OT502A SCA75 R77/07/pp10 SMD0508 BLA1011-200

    BLA1011-300

    Abstract: No abstract text available
    Text: BLA1011-300 Avionics LDMOS transistors Rev. 02 — 5 February 2008 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical performance


    Original     		PDF BLA1011-300 BLA1011-300

    SMD 0508

    Abstract: BLA1011-200 BLA1011S-200 250 B 340 smd Transistor sym039 SMD0508 NV SMD TRANSISTOR
    Text: BLA1011-200; BLA1011S-200 Avionics LDMOS transistor Rev. 08 — 26 October 2005 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1:


    Original     		PDF BLA1011-200; BLA1011S-200 SMD 0508 BLA1011-200 BLA1011S-200 250 B 340 smd Transistor sym039 SMD0508 NV SMD TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT M3D381 BLA1011-10 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 PINNING - SOT467C FEATURES • High power gain


    Original     		PDF M3D381 BLA1011-10 OT467C SCA75 R77/05/pp9

    09803

    Abstract: 200B BLA1011-10
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLA1011-10 Avionics LDMOS transistor Product specification Supersedes data of 2001 Nov 05 2002 Jun 17 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 FEATURES PINNING - SOT467C • High power gain


    Original     		PDF M3D381 BLA1011-10 OT467C SCA74 613524/03/pp8 09803 200B BLA1011-10

    BLA1011-300

    Abstract: LDMOS radar BLA0912-250 BLA1011-10 BLA1011-2 BLA1011-200 BLL1214-250 BLL1214-35 BLS6G3135-120
    Text: Microwave product portfolio Product type Package Frequency Band Min - Max Supply Voltage Output Power Pulse Duration Duty Cycle Power Gain typical Drain Efficiency typical (MHz) (V) (W) (us) (%) (dB) (N %) Application(s) Die technology AVIONICS LDMOS BLA1011-300


    Original     		PDF BLA1011-300 OT957A BLA0912-250 OT502A BLA1011-200 BLA1011-10 OT467C BLA1011 OT608B BLA1011-300 LDMOS radar BLA0912-250 BLA1011-10 BLA1011-2 BLA1011-200 BLL1214-250 BLL1214-35 BLS6G3135-120

    transistor SMD Z2

    Abstract: 200B BLA1011-2 MGU487 SOT538A The 2003 is a COMMON BASE transistor smd transistor z1
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 FEATURES PINNING - SOT538A • High power gain


    Original     		PDF M3D438 BLA1011-2 OT538A SCA75 R77/05/pp9 transistor SMD Z2 200B BLA1011-2 MGU487 SOT538A The 2003 is a COMMON BASE transistor smd transistor z1

    Untitled

    Abstract: No abstract text available
    Text: BLA1011-200R; BLA1011S-200R Avionics LDMOS transistors Rev. 01 — 23 February 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1.


    Original     		PDF BLA1011-200R; BLA1011S-200R BLA1011-200R 1011S-200R

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Product specification Supersedes data of 2001 Mar 02 2001 Apr 17 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A


    Original     		PDF M3D379 BLA1011-200 OT502A BLA1011-200 613524/04/pp12

    MGU487

    Abstract: 200B BLA1011-2 NV SMD TRANSISTOR
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2002 Jun 17 2002 Oct 02 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 FEATURES PINNING - SOT538A • High power gain


    Original     		PDF M3D438 BLA1011-2 OT538A SCA74 613524/04/pp8 MGU487 200B BLA1011-2 NV SMD TRANSISTOR

    BLA1011-300

    Abstract: sot957 SOT-95
    Text: BLA1011-300 Avionics LDMOS transistors Rev. 01 — 3 April 2007 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical performance


    Original     		PDF BLA1011-300 BLA1011-300 sot957 SOT-95

    BLA1011-200

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2000 Aug 02 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain


    Original     		PDF M3D379 BLA1011-200 OT502A f4825 BLA1011-200 BP317

    BLA1011-200

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2001 Feb 27 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain


    Original     		PDF M3D379 BLA1011-200 OT502A f4825 BLA1011-200 BP317

    200B

    Abstract: BLA1011-2 MGU487 gp 516
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2001 Nov 05 2002 Jun 17 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 FEATURES PINNING - SOT538A


    Original     		PDF M3D438 BLA1011-2 OT538A SCA74 613524/03/pp8 200B BLA1011-2 MGU487 gp 516

    Untitled

    Abstract: No abstract text available
    Text: BLA1011-2 Avionics LDMOS transistor Rev. 6 — 6 May 2013 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead flangeless package SOT538A with a ceramic cap. The common source is connected to


    Original     		PDF BLA1011-2 OT538A)

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 BLA1011-2 Avionics LDMOS transistor Preliminary specification 2001 June 07 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-2 PINNING - SOT538A FEATURES • High power gain


    Original     		PDF M3D438 BLA1011-2 OT538A) BLA1011-2 OT538A

    BLA1011-200

    Abstract: SMD0508
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Product specification Supersedes data of 2001 May 15 2002 Mar 18 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A


    Original     		PDF M3D379 BLA1011-200 OT502A SCA74 613524/06/pp12 BLA1011-200 SMD0508

    enamelled copper wire tables

    Abstract: SMD 0508 SMD0508
    Text: BLA1011-200R; BLA1011S-200R Avionics LDMOS transistors Rev. 01 — 23 February 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1.


    Original     		PDF BLA1011-200R; BLA1011S-200R BLA1011-200R 1011S-200R enamelled copper wire tables SMD 0508 SMD0508