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    Untitled

    Abstract: No abstract text available
    Text: Development General NXP Semiconductors BL-Cellular Systems, MST RF Power Basestations DEV&QAS Title: Bolt down mounting recommendations for Ldmos Power Amplifier Author: Josselin FAY / Raimond DUMOULIN Doc. Nr. Date: 2007/03/27 Bolt down mounting recommendations for


    Original     		PDF OT121A OT262A OT391A OT467A OT502A OT540A OT608A OT895A OT539A

    Untitled

    Abstract: No abstract text available
    Text: TAIW AN s TSM3454 SEMICONDUCTOR 30V N-Channel MOSFET bl RoHS CO M PLIANCE SOT-26 65 4 PRODUCT SUMMARY Pin Definition: 1. Drain 6. Drain 2. Drain 5. Drain 3. Gate 4. Source V ds {V 30 1 23 Features RDS on)(m£2) Id (A) 60 @ VGS= 10V 4.5 85 @ Vcs= 4.5V 3.6


    OCR Scan     		PDF TSM3454 OT-26 TSM3454CX6

    Untitled

    Abstract: No abstract text available
    Text: s TAIWAN SEMICONDUCTOR TSM3433 20V P-Channel MOSFET bl COMPLIANCE RoHS PRODUCT SUM M ARY SOT-26 V DS V P in D e fin itio n : 65 4 1. Drain 2. Drain 3. G ate 6. Drain 5, Drain 4 . Source -20 1 23 Features RDS(on)<mÛ) b (A) 42 @ Vgs = -4.5V -5.6 57 @ VCS= -2.5V


    OCR Scan     		PDF TSM3433 OT-26 TSM3433CX6

    Untitled

    Abstract: No abstract text available
    Text: TAIWAN SEMICONDUCTOR s TSM3455 30V P-Channel MOSFET bl RoHS CO M PLIANCE SO T-26 654 PRODUCT SUM M ARY Pin Definition; 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V DS V R Ds(on)(mQ) b (A) 100 @ Vcs = -10V -3.5 170 @ VGS= -4.5V -2.7 -30 1 23 Features


    OCR Scan     		PDF TSM3455 3455C

    Untitled

    Abstract: No abstract text available
    Text: TAIW AN s TSM3424 SEMICONDUCTOR 30V N-Channei MOSFET bl RoHS CO M PLIANCE SO T-26 654 PRODUCTS ÜMMARY P in D e fin itio n : VDS{V 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source RDS on){lTlÛ) Id (A) 30 @ VGS= 10V 6.7 42 @ V gs = 4.5V 5.7 30 1 23 Features


    OCR Scan     		PDF TSM3424 3424C

    Untitled

    Abstract: No abstract text available
    Text: s TAIW AN TS1051 SEMICONDUCTOR Constant Voltage and Constant Current Controller For Battery Chargers and Adaptors bl RoHS C O M P L IA N C E SOT-26 SS 4 SOP-8 6. Vcc Pin Definition: 1. Vermi 8. V\-> 5, Vfi=NSF 2. Vcc 4 . Ic iK L 3 .V s t\ö t 6- Ic i kl 4. N.C


    OCR Scan     		PDF TS1051 OT-26 TS1051

    Untitled

    Abstract: No abstract text available
    Text: TAIW AN s TSM3460 SEMICONDUCTOR 20V N-Channel MOSFET w/ESD Protected bl RoHS CO M PLIANCE SO T-26 PRODUCT SUM M ARY Pin Definition: 1. Drain e. Drain 2. Drain 5, Drain 654 3. G ate V DS V 4. S ou rce 20 1 23 Features R osanna) Id (A) 22 @ Vos = 4.5V 6 40 @ Vg* = 2.5V


    OCR Scan     		PDF TSM3460 TSM3460CX6 OT-26

    Untitled

    Abstract: No abstract text available
    Text: TAIW AN $ TSM3443 SEMICONDUCTOR 20V P-Channei MOSFET bl RoHS CO M PLIANCE S O T -2 S 654 P in D e fin itio n : 1. D rain 6. Drain 2. D rain 5, Drain 3. Gate PRODUCT SUM M ARY V os V 4. Source 20 1 23 Features R dson (m Q ) I d (A ) 60 @ VGS = -4.5V -4.7


    OCR Scan     		PDF TSM3443 TSM3443CX6 OT-26

    2A52

    Abstract: No abstract text available
    Text: TAIWAN SEMICONDUCTOR s TSM3481 3ÛV P-Channel MOSFET bl RoHS CO M PLIANCE SO T-26 65 4 PRODUCT SUM M ARY Pin D e fin itio n : 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source R Ds cn (m Q ) b (A) 48 @ V CS = -10V -5.3 79 @ VGS = -4.5V -4.1 V DS (V )


    OCR Scan     		PDF TSM3481 3481C 2A52

    Untitled

    Abstract: No abstract text available
    Text: D EVELO PM EN T DATA T h is d a ta s h e e t c o n ta in s a d v a n c e in f o r m a t io n a n d s p e c if ic a t io n s are s u b je c t to c h a n g e w it h o u t n o tic e . il B U Bl PCF8569 FO R D E T A IL E D IN F O R M A T IO N SEE T H E L A T E S T IS S U E O F H A N D B O O K IC 1 2 0 R D A T A S H E E T


    OCR Scan     		PDF PCF8569 PCF8569 PCF8569s

    BL SOT26

    Abstract: No abstract text available
    Text: TAIW AN s TSM3454 SEMICONDUCTOR 30V N-Channei MOSFET b RoHS COMPLIANCE SOT-26 654 PRODUCT SU MMARY Pin Definition: 1. Drain 6. Drain 2. Drain 5. Drain 3. Gate 4. Source Vos {V) Id RDS on)(m£2) (A) 60 @ VGS= 10V 4.5 85 @ Vos = 4 .5 V 3.6 30 1 23 Features


    OCR Scan     		PDF TSM3454 OT-26 TSM3454CX6 BL SOT26

    tsm3455

    Abstract: No abstract text available
    Text: s TAIW AN TSM3455 SEMICONDUCTOR 30V P-Channel MOSFET b RoHS CO M PLIANCE SO T-26 654 PRODUCT SUM M ARY Pin Definition; 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V DS V) R Ds(on)(mQ) b (A) 100 @ Vcs = -10V -3.5 1 70 @ VGS = -4.5V -2.7 -30 1 23


    OCR Scan     		PDF TSM3455 3455C tsm3455

    BUK202-50X

    Abstract: PowerMOS transistor TOPFET high side switch BUK202
    Text: Product specification Philips Semiconductors PowerMOS transistor BUK202-50X TOPFET high side DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured


    OCR Scan     		PDF BUK202-50X OT263 T0220 BUK202-50X PowerMOS transistor TOPFET high side switch BUK202

    Untitled

    Abstract: No abstract text available
    Text: T A IW A N S E M IC O N D U C T O R s TSM3460 20V N-Channel MOSFET w/ESD Protected b RoHS CO M PLIANCE SOT-26 PRODUCT SUM M ARY Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 654 3. Gate V DS V) 4. Source 20 1 23 Features R o s iW m O ) Id ( A ) 22 @ Vos = 4 .5 V


    OCR Scan     		PDF TSM3460 OT-26 TSM3460CX6

    buk201

    Abstract: PowerMOS transistor TOPFET high side switch BUK201-50X
    Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


    OCR Scan     		PDF BUK201-50X OT263 T0220 buk201 PowerMOS transistor TOPFET high side switch BUK201-50X

    em 223

    Abstract: No abstract text available
    Text: TAIWAN SEMICONDUCTOR s TSM3441 20V P-Channel MOSFET b RoHS CO M PLIANCE PRODUCT SUM M ARY SO T-26 654 P in D e fin itio n : 1. Drain 2. Drain 3. G ate V o s V ) 6. Drain 5, Drain 4 . Source R o W rn Q ) b (A ) 90 @ Vos = -4.5V -3.3 1 1 0 @ V gs = -2.5V -2.9


    OCR Scan     		PDF TSM3441 3441C em 223

    2U52

    Abstract: 3481C
    Text: TAIW AN s TSM3481 SEMICONDUCTOR 30V P-Channe! MOSFET b RoHS CO M PLIANCE SO T-26 654 PRODUCT SUM M ARY Pin D e fin itio n : 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source R Ds on)(m Q ) b (A) 48 @ V CS = -10V -5.3 79 @ VGS = -4.5V -4.1 V DS (V ) -30


    OCR Scan     		PDF TSM3481 3481C 2U52

    K203

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK203-50Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on M O SFET technology in a 5 pin plastic envelope, configured


    OCR Scan     		PDF BUK203-50Y BUK203-50Y K203

    5V VSG MOSFET

    Abstract: high side switch PowerMOS transistor TOPFET high side switch BUK203-50X TOPFET high side switch
    Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


    OCR Scan     		PDF BUK203-50X OT263 T0220 5V VSG MOSFET high side switch PowerMOS transistor TOPFET high side switch BUK203-50X TOPFET high side switch

    BUK202-50Y

    Abstract: PowerMOS transistor TOPFET high side switch
    Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


    OCR Scan     		PDF BUK202-50Y OT263 T0220 BUK202-50Y PowerMOS transistor TOPFET high side switch

    PowerMOS transistor TOPFET high side switch

    Abstract: BUK203-50Y
    Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


    OCR Scan     		PDF BUK203-50Y BUK203-50Y OT263 T0220 PowerMOS transistor TOPFET high side switch

    PowerMOS transistor TOPFET high side switch

    Abstract: 100-P BUK200-50X
    Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


    OCR Scan     		PDF BUK200-50X OT263 T0220 PowerMOS transistor TOPFET high side switch 100-P BUK200-50X

    philips diagram fr 310

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK200-50Y TOPFET high side switch_ _ DESCRIPTION Monolithic temperature and overload protected power switch based on M OSFET technology in a 5 pin plastic envelope, configured


    OCR Scan     		PDF BUK200-50Y BUK200-50Y philips diagram fr 310

    diagram LG 21 fs 4 bg model circuits

    Abstract: BQ 15 Transistor transistor DA 313 K2015 BT 316 transistor
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK201-50X TOPFET high side switch_ _ _ DESCRIPTION Monolithic temperature and overload protected power switch based on MQSFET technology in a 5 pin plastic envelope, configured


    OCR Scan     		PDF BUK201-50X BUK201-50X 201-50X diagram LG 21 fs 4 bg model circuits BQ 15 Transistor transistor DA 313 K2015 BT 316 transistor