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Diodes Incorporated DESD3V3S1BL-7B TVS DIODE 3.3VWM 7VC DFN1006-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DESD3V3S1BL-7B	Reel	1,349,500		10,000	1 - 10 - 100 - 1000 - 10000 $0.0302	Buy Now
	DESD3V3S1BL-7B	Cut Tape	8,382		1	1 $0.22 10 $0.148 100 $0.0722 1000 $0.04182 10000 $0.03362	Buy Now
	DESD3V3S1BL-7B	Digi-Reel			1	1 $0.22 10 $0.148 100 $0.0722 1000 $0.04182 10000 $0.03362	Buy Now
Avnet Americas	DESD3V3S1BL-7B	Reel	10,000	8 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 $0.03384	Buy Now
Newark	DESD3V3S1BL-7B	Cut Tape	8,140		5	1 $0.236 10 $0.162 100 $0.071 1000 $0.054 10000 $0.054	Buy Now
	DESD3V3S1BL-7B	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.046	Buy Now
TME	DESD3V3S1BL-7B				1	1 $0.2092 10 $0.144 100 $0.0691 1000 $0.0422 10000 $0.0422	Get Quote
Rutronik	DESD3V3S1BL-7B	Reel	10,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.0431	Buy Now

Avnet Asia	DESD3V3S1BL-7B			8 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 $0.03039	Buy Now
Avnet Silica	DESD3V3S1BL-7B			10 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	DESD3V3S1BL-7B		120,000		1	1 - 10 - 100 - 1000 - 10000 $0.042	Buy Now
Win Source Electronics	DESD3V3S1BL-7B		300,000			1 - 10 - 100 - 1000 - 10000 $0.018	Buy Now
Diodes Incorporated DESD3V3E1BL-7B TVS DIODE 3.3VWM 7VC DFN1006-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DESD3V3E1BL-7B	Reel	320,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.02566	Buy Now
	DESD3V3E1BL-7B	Cut Tape	5,455		1	1 $0.2 10 $0.136 100 $0.0664 1000 $0.03848 10000 $0.03094	Buy Now
	DESD3V3E1BL-7B	Digi-Reel			1	1 $0.2 10 $0.136 100 $0.0664 1000 $0.03848 10000 $0.03094	Buy Now
Newark	DESD3V3E1BL-7B	Cut Tape	3,920		5	1 $0.208 10 $0.145 100 $0.06 1000 $0.036 10000 $0.036	Buy Now
TME	DESD3V3E1BL-7B		10,000		1	1 $0.2214 10 $0.2214 100 $0.0628 1000 $0.0419 10000 $0.0314	Buy Now
Rutronik	DESD3V3E1BL-7B	Reel	20,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.0289	Buy Now
Avnet Asia	DESD3V3E1BL-7B			8 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 $0.02026	Buy Now

Avnet Silica	DESD3V3E1BL-7B		30,000	10 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	DESD3V3E1BL-7B		20,000		1	1 - 10 - 100 - 1000 - 10000 $0.0355	Buy Now
Diodes Incorporated DESD5V0U1BL-7B TVS DIODE 5VWM 7.2VC DFN1006-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DESD5V0U1BL-7B	Reel	210,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.03165	Buy Now
	DESD5V0U1BL-7B	Cut Tape	8,474		1	1 $0.24 10 $0.168 100 $0.0819 1000 $0.04748 10000 $0.03817	Buy Now
Avnet Americas	DESD5V0U1BL-7B	Reel		8 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 $0.02784	Buy Now
Newark	DESD5V0U1BL-7B	Cut Tape	120		5	1 $0.218 10 $0.134 100 $0.062 1000 $0.044 10000 $0.044	Buy Now
TME	DESD5V0U1BL-7B				1	1 $0.2249 10 $0.1462 100 $0.0748 1000 $0.0438 10000 $0.0368	Get Quote
Avnet Silica	DESD5V0U1BL-7B		10,000	10 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

New Advantage Corporation	DESD5V0U1BL-7B		10,000		1	1 - 10 - 100 - 1000 - 10000 $0.0443	Buy Now
Diodes Incorporated DESD12V0S1BL-7B TVS DIODE 12VWM 33.5VC DFN1006-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DESD12V0S1BL-7B	Reel	80,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.03665	Buy Now
	DESD12V0S1BL-7B	Cut Tape	3,839		1	1 $0.28 10 $0.194 100 $0.0949 1000 $0.05498 10000 $0.0442	Buy Now
Newark	DESD12V0S1BL-7B	Cut Tape	3,685		5	1 $0.302 10 $0.208 100 $0.101 1000 $0.058 10000 $0.058	Buy Now
TME	DESD12V0S1BL-7B				1	1 $0.4076 10 $0.4076 100 $0.0905 1000 $0.0604 10000 $0.0453	Get Quote
Avnet Asia	DESD12V0S1BL-7B			8 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 $0.02895	Buy Now
Avnet Silica	DESD12V0S1BL-7B		10,000	10 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

New Advantage Corporation	DESD12V0S1BL-7B		10,000		1	1 - 10 - 100 - 1000 - 10000 $0.0514	Buy Now
Diodes Incorporated DESD5V0S1BL-7B TVS DIODE 5VWM 14VC DFN1006-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DESD5V0S1BL-7B	Reel	40,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.05159	Buy Now
	DESD5V0S1BL-7B	Cut Tape	27,578		1	1 $0.35 10 $0.243 100 $0.1225 1000 $0.07416 10000 $0.05965	Buy Now
Avnet Americas	DESD5V0S1BL-7B	Reel		8 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 $0.03853	Buy Now
Newark	DESD5V0S1BL-7B	Cut Tape	10,989		5	1 $0.374 10 $0.26 100 $0.131 1000 $0.079 10000 $0.079	Buy Now
Bristol Electronics	DESD5V0S1BL-7B		25,630			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	DESD5V0S1BL-7B		10,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	DESD5V0S1BL-7B		310		27	1 - 10 - 100 $0.0938 1000 $0.0938 10000 $0.0938	Buy Now
TME	DESD5V0S1BL-7B				1	1 $0.2214 10 $0.1604 100 $0.0879 1000 $0.0572 10000 $0.0473	Get Quote

Rutronik	DESD5V0S1BL-7B	Reel	10,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.0496	Buy Now
Avnet Asia	DESD5V0S1BL-7B			8 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 $0.03454	Buy Now
Avnet Silica	DESD5V0S1BL-7B			10 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more BL 7B price and stock on Findchips.com

BL 7B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 531,~A >@/96:6.?@=2 >64:.8 =28.C 3HDTURHS \ 9dV ]b^e^\mkb\ lmk^g`ma /[^mp^^g \hbe Zg] \hgmZ\ml0 \ Snk`^ pbmalmZg] ohemZ`^ ni mh <666VBD2 f^^ml GDD PZkm <> Zg] T^e^\hk]bZ \ Mbg4 \k^^iZ`^ bl 84;ff /[^mp^^g \hbe Zg] \hgmZ\m02 Mbg4 \e^ZkZg\^ bl 846ff /[^mp^^g \hbe Zg] \hgmZ\m0	Original	PDF	666VBD2 \hgmZ\m02 846ff 96fV0
weidmuller 170125 Abstract: 160505 din 46228 25nm 161871 Weidmuller BLZ 5.00 H07V-K analoge schaltkreise 132166 BL35 Text: Steckverbindersysteme in metrischer Bauform Systemübersicht • BL 3.5/SL 3.5 Raster 3,5 mm Die Systeme zeichnen sich durch • BLZ 5.00/SL 5.00 (Raster 5,00 mm) • eine platzsparende Bauweise • BLZ 7.50/SL 7.50 (Raster 7,50 mm) • eine konische Drahteinführung	Original	PDF	00/SL 50/SL 12-Rundstecker, weidmuller 170125 160505 din 46228 25nm 161871 Weidmuller BLZ 5.00 H07V-K analoge schaltkreise 132166 BL35
Untitled Abstract: No abstract text available Text: in ttil « « « « « * 28F400BX-TL/BL, 28F004BX-TL/BL 4-MBIT 256K x 16, 512K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY • Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.3V ±0.3V ■ x8/x16 Input/Output Architecture — 28F400BX-TL, 28F400BX-BL	OCR Scan	PDF	28F400BX-TL/BL, 28F004BX-TL/BL x8/x16 28F400BX-TL, 28F400BX-BL 16-bit 32-bit 28F004BX-TL, 28F004BX-BL 16-KB
pl3155ac Abstract: Trompeter 305 TAI-144 TAI-173 Text: RED NUCATES ORIGINAL CABLES ACCOMDOATEO Ml7/176-00002 TWC-7B-1 TWC-124-1A 10602, RAYCHEM TWAC-78-1F2 702BDO13O, RAYCHEM 83310 BELDEN 202-3927 MICRDODT 202-3942 MICRODOT B451 BELDEN 202-3934 MICROOOT 2524E0114, RAYCHEM TWC-7B-2 TWC-124-2 BL-9B2 TIMES BL— 1242 TIMES	OCR Scan	PDF	Ml7/176-00002 TWC-124-1A TWAC-78-1F2 702BDO13O, 2524E0114, TWC-124-2 GCB75TM24H, 221BBB, GCB75RR1. HMS2-1149, pl3155ac Trompeter 305 TAI-144 TAI-173
GM71C4100 Abstract: bl70 BLT70 BL-70 gm71c4100bj GM71C4104 bl80 Text: @ LG Semicon. Co. LTD._ Description Features The GM71C4100B/BL is the new generation dynamic RAM organized 4,194,304 x 1 bit. GM71C4100B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The	OCR Scan	PDF	GM71C4100B/BL 300mil 20pin 400mil GM71C4100 bl70 BLT70 BL-70 gm71c4100bj GM71C4104 bl80
Untitled Abstract: No abstract text available Text: DS1330YL/BL DS1330YL/BL 256K Nonvolatile SRAM with Battery Monitor DALLAS SEMICONDUCTOR NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1330Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • Built-in lithium battery provides more than 10 years of data retention NC NC A14	OCR Scan	PDF	DS1330YL/BL DS1330Y/AB D1330YL/BL 34-PIN 68-pin
GM71C17403b Abstract: GM71C17403BJ GM71C17403 Text: @ LG Semicon. Co. LTD. Features Description The GM71C17403B/BL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71C17403B/BL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The	OCR Scan	PDF	GM71C17403B/BL 300mil GM71C17403b GM71C17403BJ GM71C17403
GM71V17803BJ6 Abstract: fl37 IRAD GM71V17803BJ7 Text: @ LG Semicon. Co. LTD. Description Features The GM71V S 17803B/BL is the new generation dynamic RAM organized 2,097,152 words x 8 bit. GM71V(S)17803B/BL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The	OCR Scan	PDF	GM71V 17803B/BL 28pin 400mil GM71V17803BJ6 fl37 IRAD GM71V17803BJ7
512X16 sram Abstract: KM616V4002B KM616V4002 Text: Prr?]>rrTine:y KM616V4002B/BL, KM616V4002B/BLI CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION - F astA ccessT im e 10,12,15 (M a x.) - Low Power Dissipation Standby (TTL) : 40 • (Max.) The KM616V4002B/BL is a 4,194,304-bit high-speed Static	OCR Scan	PDF	KM616V4002B/BL, KM616V4002B/BLI 256Kx KM616V4002B/BL-10 KM616V4002B/BL KM616V400202B/BLI 44-SOJ-400 44-TSQP2-400F 512X16 sram KM616V4002B KM616V4002
Untitled Abstract: No abstract text available Text: intûl * 28F400BX-TL/BL, 28F004BX-TL/BL 4-MBIT 256K x 16,512K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY • Low Voltage Operation for Very Low Power Portable Applications — VCc = 3.3V ±0.3V ■ Automatic Power Savings Feature — 0.8 mA typical Ice Active Current in	OCR Scan	PDF	28F400BX-TL/BL, 28F004BX-TL/BL 28F400BX-TL, 28F400BX-BL 16-bit 32-blt 28F400BX-L 28F004BX-L
bl 9 a2 Abstract: 18-PIN 20-PIN 26-PIN ZIP20-P-400 Text: O K I Sem iconductor M SM 511000B /B L _ 1,048,576-Word x 1-Bit DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511000B/BL is OKI’s CMOS silicon gate process technology.	OCR Scan	PDF	MSM511000B/BL_ 576-Word MSM511000B/BL cycles/64ms MSM5110OOB/BL 242i4D 00177fa3 bl 9 a2 18-PIN 20-PIN 26-PIN ZIP20-P-400
Untitled Abstract: No abstract text available Text: HM514102B/BL Series 4,194,304-word x 1-bit Dynamic RAM The Hitachi HM514102B/BL is a CMOS dynamic RAM organized 4,194,3 0 4 -w o rd x 1-bit. H M 514102B /B L has realized higher density, higher perform ance and various functions by employing 0.8 pm CMOS process technology and	OCR Scan	PDF	HM514102B/BL 304-word 514102B 20-pin 20-pin HM514102BS/BLS-7 HM514102BS/BLS-8
"NOR Flash" intel 28f Abstract: 486TM 80L188EB intel PLD Text: INTEL CORP {flEMORY/PLD/ L7E D in t e l • 4fl2bl7b 0001 373 S>40 ■ P O IIilL D B S lO K IM V 28F400BX-TL/BL, 28F004BX-TL/BL 4-MBIT (256K x 1 6 ,512K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY ■ Low Voltage Operation for Very Low Power Portable Applications	OCR Scan	PDF	28F400BX-TL/BL, 28F004BX-TL/BL x8/x16 28F400BX-TL, 28F400BX-BL 16-bit 32-bit 28F004BX-TL, 28F004BX-BL 28F400BX-L "NOR Flash" intel 28f 486TM 80L188EB intel PLD
I28F400 Abstract: 80L188EB 82360SL intel PLD D773 Text: A D V A N C E IN F O R M A T IO N in te i INTEL CORP MEMORY/PLD/ SbE » • 4fl2bl7b Da773Sa TßH ■ I T L E 28F400BX-TL/BL, 28F004BX-TL/BL - T qt (3> 2 6 4MBIT (256K x16, 512K x8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY I Low Voltage Operation for Very Low	OCR Scan	PDF	Da773Sa 28F400BX-TL/BL, 28F004BX-TL/BL x8/x16 28F400BX-TL, 28F400BX-BL 16-bit 32-bit 28F004BX-TL, 28F004BX-BL I28F400 80L188EB 82360SL intel PLD D773

HM514402B/BL Abstract: HM514402 Text: HM514402B/BL Series 1,048,576-word x 4-bit Dynamic RAM The Hitachi HM 514402B/BL is a CMOS dynamic R A M o rg a n iz e d 1 ,0 4 8 ,5 7 6 -w o rd x 4 -b it. H M 5 1 4 4 0 2 B /B L has re a liz e d h ig h e r d en sity , h ig h e r p e rfo rm a n c e and v ario u s fu n c tio n s by	OCR Scan	PDF	HM514402B/BL 576-word 514402B/BL 514402B 20pin 20-pin HM514402BS/BLS-7 HM514402BS/BLS-8 300-mil HM514402
HM514402 Abstract: M514402 HM514402bs HM514402BZ Text: HM514402B/BL Series 1,048,576-word x 4-bit Dynamic RAM The Hitachi HM 514402B/BL is a CMOS dynamic R A M o rg a n iz e d 1 ,0 4 8 ,5 7 6 -w o rd x 4 -b it. H M 5 1 4 4 0 2 B /B L has re a liz e d h ig h e r d en sity , h ig h er p e rfo rm a n c e and v ario u s fu n c tio n s by	OCR Scan	PDF	HM514402B/BL 576-word 20-pin HM514402BS/BLS-7 HM514402 M514402 HM514402bs HM514402BZ
Untitled Abstract: No abstract text available Text: bbSB^Bl Philips Semiconductors QQ5H351 T56 BBAPX Preliminary specification Silicon planar epitaxial high-speed switching diode — BAS216 N AUER PHILIPS/DISCRETE FEATURES b?E D QUICK REFERENCE DATA • SMD envelope SYMBOL • High speed vH continuous reverse	OCR Scan	PDF	QQ5H351 BAS216 BAS216 00BM325
Untitled Abstract: No abstract text available Text: DS1345YUBL DS1345YL/BL DALLAS SEMICONDUCTOR 1024K Nonvolatile SRAM with Battery Monitor NOT RECOMMENDED FOR NEW DESIGNS. SEE PS1345Y/AB DATA SHEET. PIN ASSIGNMENT FEATURES • Built-in lithium battery provides more than 10 years of data retention NC NC A14	OCR Scan	PDF	DS1345YUBL DS1345YL/BL 1024K PS1345Y/AB QQlb74b D1345YL/BL 34-PIN 2bl4130 D01b747
Untitled Abstract: No abstract text available Text: Philips Semiconductors bbSB^Bl 0031531 "ns HAPX^^duc^peoification PNP 4 G Hz wideband transistor £ BFQ32 N AUER PHILIPS/DISCRETE D ESCRIPTION b'lE PINNING P N P transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband	OCR Scan	PDF	BFQ32 BFQ32/02 BFR96. bbS3T31
2SJ223 Abstract: No abstract text available Text: bl E J> 2 S J 2 2 3 m 44tìb2G5 0D12cìfltì 7b7 « H I T 4 , 2 S J 2 2 3 § — HITACHI/ OPTOELECTRONICS) Silicon P Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current	OCR Scan	PDF	2SJ223 0D12c 2SJ223 GD12T
BY448 Abstract: BY440 BY458 Philips diode tFR Text: N AMER PHI LIPS/DISCRETE bTE D • bbSB^Bl QG2bM75 TTM BY448 BY458 IAPX PARALLEL EFFICIENCY DIODES Double-diffused passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes, intended fo r use as efficiency diodes in transistorized horizontal deflection circuits and PPS power-pack system	OCR Scan	PDF	bbS3131 QG2bM75 BY448 BY458 BY458 BY448 OD-57. 002b4fll BY440 Philips diode tFR
LT 8834 Abstract: LT 7232 TS-3401 Text: "a l p h a n u m e r i c in d e x L B L -9 3 1 6 G . L BL -9429G 5-11 5-14 L T C - 2 7 2 3 Y . 10-21 L TC -3710G 14-3	OCR Scan	PDF	-9429G -9315G S-9404G -3710G -3718G -4621W -4623W S-9409G LT 8834 LT 7232 TS-3401
RDM15PB5 Abstract: RDM15SA5 Text: C6 I/O Connectors ñ-bl-IJ D-Subminiature PCB Right Angle Performance Data MATERIALS Insulator Material: Glass Filled Polyester Color Black U.L. Flammability 94V-0 Contact Material: Phosphor Bronze Contact Plating: 15m- " .381 n,m Gold Over Nickel 30 m- " (.762 y,m) Gold Over Nickel	OCR Scan	PDF	RDM15SA5 RDM15SB5 RDM15PA5 RDM15PB5 DA001A RDM25SA5 RDM25SB5 RDM25PA5 RDM25PB5 R0M37SA5
Untitled Abstract: No abstract text available Text: 0S1350YUBL DS1350YL/BL 4096K Nonvolatile SRAM with Battery Monitor DALLAS SEMICONDUCTOR NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1350Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • Built-in lithium battery provides more than 10 years of data retention • Data is automatically protected during V c c power	OCR Scan	PDF	0S1350YUBL DS1350YL/BL 4096K DS1350Y/AB DS1350YUBL D1350YL/BL 34-PIN

BL 7B Search Results

BL 7B Price and Stock

Diodes Incorporated DESD3V3S1BL-7B

Diodes Incorporated DESD3V3E1BL-7B

Diodes Incorporated DESD5V0U1BL-7B

Diodes Incorporated DESD12V0S1BL-7B

Diodes Incorporated DESD5V0S1BL-7B

BL 7B Datasheets Context Search

Untitled

weidmuller 170125

Untitled

pl3155ac

GM71C4100

Untitled

GM71C17403b

GM71V17803BJ6

512X16 sram

Untitled

bl 9 a2

Untitled

"NOR Flash" intel 28f

I28F400

HM514402B/BL

HM514402

Untitled

Untitled

Untitled

2SJ223

BY448

LT 8834

RDM15PB5

Untitled