Untitled
Abstract: No abstract text available
Text: LM95245 LM95245 Precision Remote Diode Digital Temperature Sensor with TruTherm BJT Beta Compensation Technology for 45nm Process Literature Number: SNIS148F LM95245 Precision Remote Diode Digital Temperature Sensor with TruTherm® BJT Beta Compensation Technology for 45nm
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LM95245
LM95245
SNIS148F
11-bit
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2N3904
Abstract: LM96163 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6
Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor
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LM96163
LM96163
2N3904,
2N3904
LM96163C
LM96163CISD
LM96163CISDX
QFN10
RLs6
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PDF
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RTU620
Abstract: No abstract text available
Text: LM96163 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Literature Number: SNAS433C LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm® BJT Transistor Beta
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LM96163
LM96163
SNAS433C
RTU620
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PDF
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Untitled
Abstract: No abstract text available
Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor
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LM96163
LM96163
2N3904,
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PDF
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Untitled
Abstract: No abstract text available
Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor
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LM96163
2N3904,
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PDF
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bjt specifications
Abstract: TRANSISTORS BJT list DG-2128 DG2128 POWER BJTs common base bjt DS-1639 CAMSEMI common emitter bjt TRANSISTOR REPLACEMENT table for transistor
Text: Power BJT Specification for RDFC Applications Application Note AN-2276 RDFC Circuit Description ABSTRACT This application note provides key parametric requirements of power BJTs suitable for Resonant Discontinuous Forward Converter RDFC applications. As the main power switch, the BJT
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AN-2276
AN-2276-0904
07-Apr-2009
bjt specifications
TRANSISTORS BJT list
DG-2128
DG2128
POWER BJTs
common base bjt
DS-1639
CAMSEMI
common emitter bjt
TRANSISTOR REPLACEMENT table for transistor
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PDF
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power BJT
Abstract: bjt specifications IW1810 circuits using BJT Flyback transformer Computer Monitor bjt gate drive circuit JB 71 JESD22-A114 bjt 100 Application Note AC-DC battery charger constant
Text: iW1810 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT 1.0 Features Intelligent AC-DC and LED Power 2.0 Description ● Primary-side feedback eliminates opto-isolators and simplifies design ● Internal 800-V bipolar junction transistor BJT
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iW1810
power BJT
bjt specifications
IW1810
circuits using BJT
Flyback transformer Computer Monitor
bjt gate drive circuit
JB 71
JESD22-A114
bjt 100
Application Note AC-DC battery charger constant
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PDF
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high frequency bjt
Abstract: bjt specifications Drive Base BJT power BJT Transistor BJT High Current FLYBACK APPLICATION NOTES bjt 500v optoisolator
Text: iW1810 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT 1.0 Features 2.0 Description ●● Primary-side feedback eliminates opto-isolators and simplifies design ●● Internal 800-V bipolar junction transistor BJT ●● 64 kHz PWM switching frequency
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iW1810
high frequency bjt
bjt specifications
Drive Base BJT
power BJT
Transistor BJT High Current
FLYBACK APPLICATION NOTES
bjt 500v
optoisolator
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PDF
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transistor 2sc5353
Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000
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DP0540001
200kHz
200kHz
280ns
transistor 2sc5353
2sa2035
TRANSISTOR SMD 13W
HA2003
Bjt 60 w 600v .5A
pnp transistor 800v
TPC6D02
VS6 SOT23
400V dvc to 5V DC Regulator
MSTM TOSHIBA
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bjt 107
Abstract: bjt specifications PWM switch AC-DC Drive Base BJT power BJT SWITCHING bjt 500v small signal BJT transistor 20 A BJT small signal bjt specifications low voltage high current BJT
Text: iW1812 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT and OTP 1.0 Features Intelligent AC-DC and LED Power 2.0 Description ●● Primary-side feedback eliminates opto-isolators and simplifies design ●● Internal 800-V bipolar junction transistor BJT
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iW1812
bjt 107
bjt specifications
PWM switch AC-DC
Drive Base BJT
power BJT
SWITCHING bjt 500v
small signal BJT transistor
20 A BJT
small signal bjt specifications
low voltage high current BJT
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Untitled
Abstract: No abstract text available
Text: iW1816 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT and OTP 1.0 Features 2.0 Description ●● Primary-side feedback eliminates opto-isolators and simplifies design ●● Internal 800-V bipolar junction transistor BJT ●● Adaptively controlled soft start-up enables fast and
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iW1816
64kHz
230VAC
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Untitled
Abstract: No abstract text available
Text: i, U na. <^E.mi- 2ona.uctoi 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N1537A GE PNP POWER BJT PACKAGE STYLE: TO-3 DESCRIPTION The 2N1537A is a Ge PNP Power BJT. It is packaged in a TO-3 Package.
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2N1537A
2N1537A
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DMOSFET
Abstract: ZCP0545A
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL IGBT ZCP0545A ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . MAX. This IGBT combines the high input impedance of the DMOSFET with the high current density of the BJT. PARAMETER SYMBOL MIN. UNIT CONDITIONS.
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ZCP0545A
DMOSFET
ZCP0545A
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Untitled
Abstract: No abstract text available
Text: Green Power Solutions srl Phone: +39-011-988 2251 Fax: +39-011-988 1358 Web: www.gpsemi.it e-mail: info@gpsemi.it Via Venezia 34D - 10088 Volpiano TO , Italy GSV SURGE VOLTAGE SUPPRESSORS Pnp diffused silicon structure Symmetric blocking characteristics Suitable for SCR, BJT and IGBT applications
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GSV22020-16
GSV22020-15
GSV22023-14
GSV22023-13
GSV22026-12
GSV22026-11
GSV22030-10
GSV22030-09
GSV2280
GSV22020-.
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Untitled
Abstract: No abstract text available
Text: BCP5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications
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BCP5616Q
OT223
500mV
BCP5316Q
DS36981
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Untitled
Abstract: No abstract text available
Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the • Medium Power Switching or Amplification Applications stringent requirements of Automotive Applications. •
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BCP5316Q
OT223
-500mV
BCP5616Q
DS36980
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TRANSISTOR cBC 449
Abstract: No abstract text available
Text: UCC28722 www.ti.com SLUSBL7A – DECEMBER 2013 – REVISED JANUARY 2014 Constant-Voltage, Constant-Current Controller With Primary-Side Regulation, BJT Drive Check for Samples: UCC28722 FEATURES DESCRIPTION • • The UCC28722 flyback power supply controller
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UCC28722
UCC28722
50-mW
TRANSISTOR cBC 449
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AA5188
Abstract: No abstract text available
Text: Agamem Electronics Inc. PRELIMINARY AA51880 SERVO MOTOR CONTROLLER INTRODUCTION The AA51880 is a BJT integrated circuit using in servo motor control applications. The built-in voltage regulator provides the AA51880 with extremely stable output voltage. FEATURES
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AA51880
AA51880
AA5188
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AA5188
Abstract: No abstract text available
Text: AA51880 Agamem Technology Inc. PRELIMINARY SERVO MOTOR CONTROLLER INTRODUCTION The AA51880 is a BJT integrated circuit using in servo motor control applications. The built-in voltage regulator provides the AA51880 with extremely stable output voltage. FEATURES
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AA51880
AA51880
MO-137
AA5188
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Untitled
Abstract: No abstract text available
Text: UCC28722 www.ti.com SLUSBL7A – DECEMBER 2013 – REVISED JANUARY 2014 Constant-Voltage, Constant-Current Controller With Primary-Side Regulation, BJT Drive Check for Samples: UCC28722 FEATURES DESCRIPTION • • The UCC28722 flyback power supply controller
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UCC28722
UCC28722
50-mW
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Characteristics of GaAs Spike Doped Collectors
Abstract: kopin
Text: > For Submission to BCTM 2012 < 1 Characteristics of GaAs Spike Doped Collectors P. J. Zampardi, K. Kwok, C. Cismaru, M. Sun, and A. Lo Abstract—Spike-doped collector designs have recently been studied in both Si BJT and GaAs HBTs as a way to improve the
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FMMT634Q
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT634Q 100V NPN DARLINGTON TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features
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FMMT634Q
900mA
625mW
FMMT734Q
AEC-Q101
DS37051
FMMT634Q
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a14q
Abstract: No abstract text available
Text: TMS28F008SET, TMS28F008SEB, TMS28F800SET. TMS28F800SEB TMS28F008SZT, TMS28F008SZB, TMS28F800SZT, TMS28F800SZB 1048576 BY 8-BJT/524288 BY 16-BIT BOOT-BLOCK FLASH MEMORIES • • • • • • • • Organization. . . 1048576 By 8 Bits 524288 By 16 Bits
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TMS28F008SET,
TMS28F008SEB,
TMS28F800SET.
TMS28F800SEB
TMS28F008SZT,
TMS28F008SZB,
TMS28F800SZT,
TMS28F800SZB
8-BJT/524288
16-BIT
a14q
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT560Q 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features
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FMMT560Q
-500V
-150mA
500mA
100mA
AEC-Q101
DS37020
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