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    Festo GRLA-1/4-QB-3/8-U

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    Festo GRLA-1/4-QB-5/32-U

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    Festo GRLA-1/4-QB-1/4-U

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    Festo GRLA-1/4-QB-5/16-U

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    Festo GRLA-1/4-QS-10-RS-D

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    DigiKey GRLA-1/4-QS-10-RS-D Bulk 12 1
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    A14Q Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    A14Q Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    A14Q Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NCC equivalent

    Abstract: No abstract text available
    Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors


    OCR Scan     		PDF TMS29F400T, TMS29F400B 8-BIT/262144 16-BIT SMJS843A 44-Pin 48-Pin 8-Blf/262144 NCC equivalent

    A13G

    Abstract: CXK5T81000ATN CXK5T81000AYN 5 pin A13E power supply circuit 24v ac to 3.6v dc mcoe
    Text: SONY | CXK5T81OOOATN/AYN - 1 0 L L X / 1 2 L L X 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5T81 OOOATN/AYN is a high Preliminary speed CMOS static RAM organized as 131072-words by 8 -bits. Special feature are low power consumption and


    OCR Scan     		PDF CXK5T81OOOATN/AYN 131072-word CXK5T81 131072-words -10LLX -12LLX -10LLX 100ns A13G CXK5T81000ATN CXK5T81000AYN 5 pin A13E power supply circuit 24v ac to 3.6v dc mcoe

    Untitled

    Abstract: No abstract text available
    Text: TMS28F008Axy,TMS28F800Axy 1 048 576 BY 8-BIT/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SM JS851A-NO VEM BER 1997 - REVISED MARCH 1998 • Organization . . . 1048576 By 8 Bits 524288 By 16 Bits • Array-Blocking Architecture - Two 8K-Byte/4K-Word Parameter Blocks


    OCR Scan     		PDF TMS28F008Axy TMS28F800Axy 8-BIT/524 16-BIT JS851A-NO 96K-Byte/48K-Word 128K-Byte/64K-Word 16K-Byte/8K-Word 28F008Axy70 28F008Axy80

    HM628512ALPI-7

    Abstract: a12q A17a DP-32 HM628512ALFPI-7 HM628512ALFPI-8 HM628512ALPI-8 HM628512ALTTI-7 Hitachi Scans-001
    Text: HM628512AI Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-791 Z Preliminary Rev. 0.0 Jun. 20, 1997 D escription T he Hitachi HM 628512A I is a 4-M bit static RAM organized 512-kw ord x 8-bit. It realizes higher density, higher perform ance and low pow er consum ption by em ploying 0 .5 p m H i-C M O S process technology. The


    OCR Scan     		PDF HM628512AI 524288-word ADE-203-791 M628512AI 512-kword 525-mil 400-mil 600-mil D-85622 HM628512ALPI-7 a12q A17a DP-32 HM628512ALFPI-7 HM628512ALFPI-8 HM628512ALPI-8 HM628512ALTTI-7 Hitachi Scans-001

    ALY 34

    Abstract: 28f800 TMS2800 R-PDSO-G44 Package A10q ALY-34
    Text: TMS28F008Axy,TMS28F800Axy 1 048 576 BY 8-BIT/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES S M JS 851A - N O VEM BER 1997 - REVISED M ARCH 1998 Organization . . . 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture - Two 8K-Byte/4K-Word Parameter Blocks


    OCR Scan     		PDF TMS28F008Axy TMS28F800Axy 8-BIT/524 16-BIT SMJS851A 96K-Byte/48K-Word 128K-Byte/64K-Word 16K-Byte/8K-Word 28F008Axy70 28F008Axy80 ALY 34 28f800 TMS2800 R-PDSO-G44 Package A10q ALY-34

    P0820A

    Abstract: No abstract text available
    Text: SONY CXK581000ATM/AYM/AM/AP -55SL/70SL/1OSL 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by CXK581000ATM CXK581000AYM 32 pin TSOP Plastic 32 pin TSOP (Plastic)


    OCR Scan     		PDF CXK581000ATM/AYM/AM/AP -55SL/70SL/1OSL 131072-word 131072-words -55LL755SL -70LL770SL -10LL710SL P0820A

    Untitled

    Abstract: No abstract text available
    Text: i X28C010 1M m 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 120ns • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or VPP Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms


    OCR Scan     		PDF X28C010 120ns 500jiA X28C010

    xlxx

    Abstract: xi12 YI11 yr03
    Text: P LESSEY SEMICONDUCTORS 13E D • 725 1513 OOlOObb 3 PLESSEY W Semiconductors ■ PDSP16112/PDSP16112A 16 x 12 BIT COMPLEX MULTIPLIER (SU P ER SED ES MARCH 1987 EDITION The PDSP16112/PDSP16112A w ill m ultiply a com plex (16 + 16) bit data word by a com plex (12 + 12) bit coefficient


    OCR Scan     		PDF PDSP16112/PDSP16112A PDSP16112/PDSP16112A 20MHz PDSP16112A) 10MHz PDSP16112) 20MHz AC120 7220S13 T-90-20 xlxx xi12 YI11 yr03

    33A1S

    Abstract: HY628400LG-I
    Text: HY628400-I Series •HYUNDAI 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY628400-I 512KX 1DE02-11-MAY95 HY628400LP-I HY628400LLP-I HY628400LG-I 33A1S

    MA1002 digital LED Clock Module

    Abstract: MA1002 Robinson Nugent CATALOG NSB7881 equivalent transistor P347 t110 94v 0 MEPCO 5043 LN543RA m7104 Lm13800
    Text: D ID I-K E Y l r C O R P TOLL FREE W ATS LINE O R A T I O N Telephone Order Entry Now Available Until 7:00 P.M. Central Time I 1- 800- 344-4539 91 E A S Y TO R E M E M B E R : 1-800-DIGI-KEY A K , HI: 218-681 66741 Catalog No. 851 1Jan.-Fab., 11 HIGHWAY 32 SOUTH


    OCR Scan     		PDF 1-800-DIGI-KEY 1-800-DIGI-KEY) MA1002 digital LED Clock Module MA1002 Robinson Nugent CATALOG NSB7881 equivalent transistor P347 t110 94v 0 MEPCO 5043 LN543RA m7104 Lm13800

    Untitled

    Abstract: No abstract text available
    Text: TMS28F008Axy TMS28F800Axy 8 3 8 8 6 0 8 BOOT-BLOCK FLASH MEMORIES _ * * 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture - Two 8K-Byte Parameter Blocks - One 96K-Byte Main Block - Seven 128K-Byte Main Blocks - One 16K-Byte Protected Boot Block


    OCR Scan     		PDF TMS28F008Axy TMS28F800Axy SMJS851 96K-Byte 128K-Byte 16K-Byte 44-Pin 40-Pin 48-Pin 48-Ball

    O09P

    Abstract: No abstract text available
    Text: TMS29LF400T, TMS29LF400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH MEMORIES • • • • • • • • • 524288 By 8 Bits 262144 By 16 Bits Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors - One 32K-Byte/16K-Word Sector


    OCR Scan     		PDF TMS29LF400T, TMS29LF400B 8-BIT/262144 16-BIT 44-Pin 48-Pin O09P

    a14q

    Abstract: No abstract text available
    Text: TMS28F008SET, TMS28F008SEB, TMS28F800SET. TMS28F800SEB TMS28F008SZT, TMS28F008SZB, TMS28F800SZT, TMS28F800SZB 1048576 BY 8-BJT/524288 BY 16-BIT BOOT-BLOCK FLASH MEMORIES • • • • • • • • Organization. . . 1048576 By 8 Bits 524288 By 16 Bits


    OCR Scan     		PDF TMS28F008SET, TMS28F008SEB, TMS28F800SET. TMS28F800SEB TMS28F008SZT, TMS28F008SZB, TMS28F800SZT, TMS28F800SZB 8-BJT/524288 16-BIT a14q

    CDP6805E2CD

    Abstract: CDP6805E3E CDP6805E2E CDP6805E3CE
    Text: HARRIS S E M I C O N D U C T O R CDP6805E2, CDP6805E2C, CDP6805E3, CDP6805E3C March 1998 CMOS 8 -Bit Microprocessor Hardware Features Description • Full Speed Operating P ow er 5 V .35mW Typ T h e C D P 6 8 0 5 E 2 and C D P 68 05E 3 M icro proce ssors Unit


    OCR Scan     		PDF CDP6805E2, CDP6805E2C, CDP6805E3, CDP6805E3C CDP6805E2CD CDP6805E3E CDP6805E2E CDP6805E3CE

    Untitled

    Abstract: No abstract text available
    Text: QSFCT16244T Advanced Information Q High Speed CMOS 16-Bit Buffers QS74FCT16244T FEATURES/BENEFITS TTL-compatible input and output levels Ground bounce controlled outputs Reduced output swing of 0-3.5V Military product compliant to MIL-STD-883 • 16-bit Function compatible to the 74F244


    OCR Scan     		PDF QSFCT16244T 16-Bit QS74FCT16244T MIL-STD-883 74F244 74FCT244 74FCT244T FCT241/4 FCT2244

    FP-32D package

    Abstract: A18Q HM62V8512ALFP-10
    Text: HM62V8512A Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-642 Z Preliminary Rev. 0.0 Sep. 30, 1996 Description The Hitachi HM62V8512A is a 4-Mbit static RAM organized 512-kword X 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.5 (Am Hi-CMOS process


    OCR Scan     		PDF HM62V8512A 524288-word ADE-203-642 512-kword 525-mil 400-mil HM62V8512ALTT FP-32D package A18Q HM62V8512ALFP-10

    Untitled

    Abstract: No abstract text available
    Text: HD66840-LCD Video Interface Controller LVIC D escription • The HD66840 LVIC interface controller con­ verts th e stan d ard video signals R, G, B for CRT display into LCD data. It enables a CRT display system to b e replaced by an LCD


    OCR Scan     		PDF HD66840---------------------LCD HD66840

    Untitled

    Abstract: No abstract text available
    Text: S O N Y 1 C X K 5 T 8 5 1 2 T M /T N 65536-word x 8-bit High Speed CMOS Static RAM -1 0 L L X /1 2 L L X Preliminary Description The CXK5T8512TM/TN is a high speed CMOS static RAM organized as 65536-words by 8-bits. Special feature are low power consumption and


    OCR Scan     		PDF 65536-word CXK5T8512TM/TN 65536-words CXK5T8512TM CXK5T8512TM/TN-1OLLX CXK5T8512TM/TN-12LLX 100ns 120ns CXK5T8512TM/TN-1

    TMS29F400B

    Abstract: No abstract text available
    Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH MEMORIES * Single Power Supply Supports 5 V ±10% Read/Write Operation • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors


    OCR Scan     		PDF TMS29F400T, TMS29F400B 8-BIT/262144 16-BIT SMJS843A 44-Pin 48-Pin 4073307/B

    Untitled

    Abstract: No abstract text available
    Text: TMS28F004Axy, TMS28F400Axy 524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES _ SMJS829A - JANUARY 1996 - REVISED AUGUST 1997 Organization . . . 524288 By 8 Bits 262144 By 16 Bits Array-Blocking Architecture


    OCR Scan     		PDF SMJS829A TMS28F004Axy, TMS28F400Axy 8-BIT/262144 16-BIT 16K-Byte 96K-Byte 128K-Byte 28F400Axy 16-Bit

    KM62V256CLTGI-10L

    Abstract: 62V256
    Text: KM62V256C, KM62U256C Family CMOS SRAM Document Title 32Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. Historv Draft Data Remark 0.0 Design target February 12th 1993 Advance 0.1 Initial draft November 2nd 1993 Preliminary 1.0


    OCR Scan     		PDF KM62V256C, KM62U256C 32Kx8 KM62V256C 62U256C KM62V256CLTGI-10L 62V256

    VDR 14D

    Abstract: zd107
    Text: Preliminary CMOS SRAM KM68U1000BLI / Ll-L 128Kx8 Bit Low Voltage & Industrial Temperature Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85°C > Fast Access Time : 70,100ns max. • Low Power Dissipation Standby(CMOS) : 165(iW (max.)L-Version


    OCR Scan     		PDF KM68U1000BLI 128Kx8 100ns 132mW KM68U1000BLGI/BLGI-L: 525mil) KM68U1000BLTI/BLTI-L KM68U1000BLRI/BLRI-L: 68U1DOOBLI/BLI-L 576-bit VDR 14D zd107

    M628512

    Abstract: HM628512LRR-7A
    Text: HM628512 Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-236F Z Rev. 6.0 Jun. 9, 1995 Description The Hitachi HM628512 is a 4-Mbit static RAM organized 512-kwordx 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.5 (Xm Hi-CMOS process technology. The


    OCR Scan     		PDF HM628512 524288-word ADE-203-236F 512-kwordx 525-mil 400-mil 600-mil HM628512FP/LFP M628512 HM628512LRR-7A

    Untitled

    Abstract: No abstract text available
    Text: 131,072 W O R D S x 8 BIT STATIC RAM PRELIMINARY DESCRIPTION The TC551001API is 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mA/MHz Typ. and


    OCR Scan     		PDF TC551001API 100ns. TC551001API/AFI/AFTI/ATRIâ DIP32-P-600 OP32-P-525 TC551001API/AFI/AFTI/ATRI TSOP32-P-Q82Q)