mpsa13 636
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bTE D • bh53T31 QQ26Q13 flTfl H A P X MPSA13 MPSA14 SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS N-P-N silicon planar epitaxial darlington transistors in plastic TO-92 envelope for general purpose applications. QUICK REFERENCE DATA
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bh53T31
QQ26Q13
MPSA13
MPSA14
100pA
mpsa13 636
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Untitled
Abstract: No abstract text available
Text: itra 3 i m DISCRETE SEMICONDUCTORS PBYR30100PT series Schottky Barrier rectifier diodes Product specification File under Discrete Semiconductors, SC02 August 1992 Philips Sem iconductors PHILIPS bh53T31 00330DM 137 S e m ico n d uctor* P roduct » p e clflca tlo n
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PBYR30100PT
bh53T31
00330DM
PBYR301OOPT
033D0R
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 25E D •I bh53T31 0022405 4 ■ BYQ28F SERIES T - O'S-J'7 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low forward voltage drop, very fast reverse recovery times and soft-recovery
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bh53T31
BYQ28F
OT-186
T-03-17
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Untitled
Abstract: No abstract text available
Text: SSE D • bh53T31 002S2fll 1 ■ I N AMER PH IL IPS /DISCR ETE J BR220 SERIES V 1 ^ -2 S '- o s ' DUAL BREAKOVER DIODES The BR220 is a range of monolithic diffusion-isolated glass-passivated dual bidirectional breakover diodes in the TO-220AB outline, available in a +/— 12% tolerance series o f nominal breakover voltage.
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bh53T31
002S2fll
BR220
O-220AB
00aaEcU
T-25-05
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Untitled
Abstract: No abstract text available
Text: bti53T31 00 32 3 3 1 Philips Semiconductors T10 APX ^^^Preliminai^specificatlon Hybrid CATV amplifier module BGD885 — N A1ER PHILIPS/DISCRETE PINNING -SOT11SD FEATURES PIN CONFIGURATION DESCRIPTION PIN • Excellent linearity • Extremely low noise 1 input
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bti53T31
BGD885
-SOT11SD
bh53T31
DD3S333
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pir 500b
Abstract: No abstract text available
Text: N AtlER PHILIPS/DISCRETE E5E D • fafa53*131 Q020b6Q 5 PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.
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Q020b6Q
BUK637-500A
BUK637-500B
BUK637-500C
31-is*
BUK637
bb53T31
0020bfl4
pir 500b
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE 86D 01398 ObE D • bbS3T31 D013b3b 0 ” d _JL BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base station transmitters in the 900 MHz communications band.
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bbS3T31
D013b3b
BLV98
OT-171
ECHANICA53T31
0013b42
BLV98
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Untitled
Abstract: No abstract text available
Text: bbSBTBl ' O D i m n Q • 2SE D N AMER PHILIPS/DISCRETE J I BD244; BD244A \ B D 2 4 4 B ; BD244C r - 3 5 - 2 S IL IC O N E P IT A X IA L B A S E P O W E R T R A N S IS T O R S P-N-P silicon transistors in a plastic envelope intended for use in general amplifier and switching
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BD244;
BD244A
BD244C
BD243;
BD243C.
BD244
bh53T31
BD244:
BD244B;
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BUP22C
Abstract: BUP22 BUP22B
Text: 11 N AMER PHILIPS/DISCR ETE 2SE D • bfa53*ï31 OOlflb? b ■ BUP22 SERIES „ T~ - g g - /3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.
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bb53T31
BUP22
BUP22B
BUP22C
7Z92B9U3
7Z92S92
BUP22B;
BUP22C.
BUP22C
BUP22B
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BDX67
Abstract: transistor bdx67 BDX66B BDX66A BDX66 BDX67B BDX66B TRANSISTOR BDX66 darlington power transistor 10a BDX66A BDX66B BDX66C
Text: N AMER PHILIPS/DISCRETE 25E D • bt.53^31 D G l T n ? 7 ■ BDX67; 67A BDX67B; 67C T-33-H7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for aûdio output stages and general amplifier and switching applications; TO-3 envelope. P-N-P complements are BDX66, BDX66A,
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BDX67;
BDX67B;
T-33-H?
BDX66,
BDX66A,
BDX66B
BDX66C.
BDX67
transistor bdx67
BDX66B BDX66A BDX66
BDX67B
BDX66B TRANSISTOR
BDX66
darlington power transistor 10a
BDX66A
BDX66C
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BUS22
Abstract: BUS22B BUS22C
Text: N AMER PHILIPS/DISCRETE BSE D • ^53*131 G01Ô743 4 ■ BU S22 SER IE S r - 3 3 ~ J 3 SILICO N DIFFUSED PO W ER T R A N S IS T O R S High-voltage, high-speed, glass-passivated npn power transistors in a TO -3 envelope, intended for use in converters, inverters, switching regulators, m otor control systems etc.
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BUS22
T-g3-13
BUS22B
BUS22C
BUS22B
BUS22C
BUS22B;
BUS22C.
T-33-13
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OM335
Abstract: philips hybrid uhf vhf amplifier HYBRID V.H.F./U.H.F. WIDE-BAND AMPLIFIER vim 838 DIN45004 jr42 booster-amplifiers
Text: L f N AMER PHI LI PS /DIS CR ETE SSE D • A 1^53=131 G01fii407 T ■ OM 335 HYBRID V H F /U H F WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in the hybrid technique, designed for use in mast-head booster-am plifiers, as pre-am plifier in MATV system s, and as general-purpose ampli
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G01fii407
OM335
DIN45004,
T-74-09-01
OM335
philips hybrid
uhf vhf amplifier
HYBRID V.H.F./U.H.F. WIDE-BAND AMPLIFIER
vim 838
DIN45004
jr42
booster-amplifiers
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M1518
Abstract: M1517 BYW30-50 BYW30-50U 420 0317 m1521 BYW30 C12850
Text: I I 25E D N AMER P H I L I P S / D I S C R E T E H abSBTBl 005275=1 h • BYW30 SE R IE S Jl 7^ 03-/7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery
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bbS3131
BYW30
BYW30â
002S7b5
bh53T31
T-03-17
M1524
M0728
M1518
M1517
BYW30-50
BYW30-50U
420 0317
m1521
C12850
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE tab53T31 OOSDESO S • BSE D BUK426-200A BUK426-200B PowerMOS transistor T - 3 7- I/ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in Switched Mode Power Supplies
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tab53T31
BUK426-200A
BUK426-200B
BUK426
-200A
-200B
bbS3T31
T-39-V1
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sy 171
Abstract: diode sy 171 BUZ76 T0220AB
Text: BUZ76 PftwprMOS transistor N AUER PHILIPS/DISCRETE OLE D • bbSBTBl 0D14M7T H m ~ T - ^ - U May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ76
0D14M7T
T0220AB;
byS3T31
T-39-11
sy 171
diode sy 171
BUZ76
T0220AB
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bc 184 transistor
Abstract: BC857AR transistors 3Kr transistors marking HJ BC856AR 3AR 3ER 3FR on TRANSISTOR BC 187 TRANSISTOR BC 187 BC856 BC857
Text: 1 N AMER PHILIPS/DISCRETE ^53*131 G015537 Ö OLE D BC856 BC857 BC858 T ' W - i S ' SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic envelope for use in driver and output stages of audio amplifiers in thick and thin-film circuits.
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LbS3T31
G015537
BC856
BC857
BC858
OT-23
200/LIA
00155M3
bc 184 transistor
BC857AR
transistors 3Kr
transistors marking HJ
BC856AR
3AR 3ER 3FR
on TRANSISTOR BC 187
TRANSISTOR BC 187
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