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Catalog Datasheet	MFG & Type	PDF	Document Tags
sy 171 Abstract: diode sy 171 BUZ76 T0220AB Text: BUZ76 PftwprMOS transistor N AUER PHILIPS/DISCRETE OLE D • bbSBTBl 0D14M7T H m ~ T - ^ - U May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	PDF	BUZ76 0D14M7T T0220AB; byS3T31 T-39-11 sy 171 diode sy 171 BUZ76 T0220AB

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sy 171

Abstract: diode sy 171 BUZ76 T0220AB
Text: BUZ76 PftwprMOS transistor N AUER PHILIPS/DISCRETE OLE D • bbSBTBl 0D14M7T H m ~ T - ^ - U May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

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BUZ76 0D14M7T T0220AB; byS3T31 T-39-11 sy 171 diode sy 171 BUZ76 T0220AB