m8540
Abstract: BG5925 m7676 BH5922 M7675 M8352 M9080 BL5922 SAFEMASTER BG5925 Taster
Text: Sicherheitstechnik Not-Aus-Wächter BH 5922, BL 5922 safemaster 0231732 • zum Patent angemeldet • zur 1-kanaligen Überwachung von max. 16 Not-Aus-Tastern zur 2-kanaligen Überwachung von max. 8 Not-Aus-Tastern • Not-Aus-Taster direkt 1-kanalig anschließbar an BH 5922
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BH5922/BL
BG5925
BL5922
M9088
D-78114
m8540
BG5925
m7676
BH5922
M7675
M8352
M9080
SAFEMASTER BG5925
Taster
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BO110
Abstract: smd transistor bh-16 datasheet transistor smd bh QED110-BH bh smd BH 16 smd BH-16 BH-16 transistor
Text: QED110-BH 16-05-2000 QED 110-AH/BH SMD 20x13x10 mm / 6 pins DTCXO Technical specifications TEMEX TIME & FREQUENCY Our QED 110 is a new generation of surface mountable digitally temperature controlled crystal oscillator. The main specifications are the very low consumption, the high stability and the small size.
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QED110-BH
110-AH/BH
20x13x10
BO110
BO110
smd transistor bh-16
datasheet transistor smd bh
QED110-BH
bh smd
BH 16 smd
BH-16
BH-16 transistor
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Untitled
Abstract: No abstract text available
Text: BCX54 BCX55 BCX56 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ✪ ISSUE 3 – FEBRUARY 1996 PARTMARKING DETAILS:BCX54 – BA BCX54-10 – BC BCX55 – BE BCX55-10 – BG BCX56 – BH BCX56-10 – BK C BCX54-16 – BD BCX55-16 – BM BCX56-16 – BL E
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BCX54
BCX55
BCX56
BCX54-10
BCX55-10
BCX56-10
BCX54-16
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Untitled
Abstract: No abstract text available
Text: Surge Arrestor ANTENNA SOLUTIONS AFP11-4 Surge Arrestor | 7/16 Male - 7/16 Female BH Electrical Performance Impedance Frequency Range 50Ω DC-2500 MHz DC-1000 MHz ≤1.08 1000-2500 MHz ≤1.1 VSWR DC-1000 MHz ≤0.1 1000-2500 MHz ≤0.2 Insertion Loss Peak Power
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AFP11-4
DC-2500
DC-1000
REV092013
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Untitled
Abstract: No abstract text available
Text: NEC ¿¿PD705100 4. 16-BIT BUS MODE If the SIZ16B input, sam pled at reset, is active, the external bus width becom es 16 bits 16-bit bus mode . In this mode, the low-order 16 bits (D0-D15) of the data bus are valid, BE2/BH acts as BH and BE3/A1 acts as A 1 . The highorder 16 bits (D16-D31) of the data bus enter the high-im pedance state.
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16-BIT
uPD705100
SIZ16B
D0-D15)
D16-D31)
32-bit
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Untitled
Abstract: No abstract text available
Text: m 3 £ BH Electronics High Frequency Magnetics High Frequency Magnetics from BH Electronics participate in a broad New products in the data communications field are operating faster. range of electronic products in a number of markets. These include 10 Megabits/second and 16 Megabits/second data rates have become
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1750A processor architecture
Abstract: PACE1750A KTC AS1-708N
Text: PACE1750AE SINGLE CHIP, 40MHz, ENHANCED CMOS 16-BIT PROCESSOR 4 - — FEATURES — - — • Implements the MIL-STD-1750A Instruction Set Architecture ■ Single Chip PACE Technology CMOS 16-BH Processor with 32 and 48-Bit Floating Point
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PACE1750AE
40MHz,
16-BIT
200ns
40MHz
P1750AE
30MHz
35MHz
40MHz
1750A processor architecture
PACE1750A
KTC AS1-708N
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MP7626
Abstract: MP7626KD MP7626KP HP5082-2835 MP7626TD/883 MP7626JD MP7626JN MP7626JP MP7626KN MP7626LD
Text: MP7626 Microprocessor Compatible Buffered Multiplying 16-Bit Digital-to-Analog Converter J R fc Micro Power Systems FEATURES BENEFITS • • • • • • • • • High Accuracy Performance at Low Cost Four Quadrant Multiplication 16-BH Monotonicity
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MP7626
16-Bit
16-BH
MP7626
HP5082-2835)
100mA
DB15-DB8)
MP7626KD
MP7626KP
HP5082-2835
MP7626TD/883
MP7626JD
MP7626JN
MP7626JP
MP7626KN
MP7626LD
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BCX56
Abstract: BCX55-10-BG BCX54
Text: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - FEBRUARY 1996 BCX54 BCX55 BCX56 * O PAR TM ARKING DETAILS:BCX54 - BA BCX54-10 - BC BCX54 16 - BD BCX55 - BE BCX55-10 ~ BG BCX55-16 - BM BCX56 - BH BCX56-10 - BCX56-16 - BL BK C O M PLEM ENTAR Y TYPES:
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BCX54
BCX55
BCX56
BCX54-10
BCX55-10
BCX56-10
BCX55-16
BCX56-16
BCX55-10-BG
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Untitled
Abstract: No abstract text available
Text: KM23C4200B CMOS MASK ROM 4M-BH 512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 120ns (max.) • Supply voltage: single + 5V • Current consumption
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KM23C4200B
8/256K
120ns
50fjA
40-pin
KM23C4200B
KM23C4200B)
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KM23C4100
Abstract: No abstract text available
Text: KM23C4100 CMOS MASK ROM 4M-BH 512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption
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KM23C4100
8/256K
150ns
40-pin
44-pin
KM23C4100
23C4100
KM23C4100)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM23C32100FP CMOS MASK ROM 32M-BH 4M x 8 /2 M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time Random access: 150ns (max.) Page access: 70ns (max.)
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KM23C32100FP
32M-BH
150ns
100mA
100/iA
64-pin
KM23C32100FP
D8-D15(
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Untitled
Abstract: No abstract text available
Text: BCX54 BCX55 BCX56 SOT89 NPN SILICON PLANAR M EDIUM POWER TRANSISTORS ISSU E 3 - FEBRUARY 1996 O % PARTM ARKING DETAILS:BCX54 - BA BCX54-10 - BC BCX55 - BE BCX55-10 - BG BCX56 - BH BCX56-10 - BK BCX54-16 - BD BCX55-16 - BM BCX56-16 - BL 111 C O M PLEM EN TA RY TYPES:BCX54 - BCX51
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BCX54
BCX55
BCX56
BCX54
BCX54-10
BCX55
BCX55-10
BCX56
BCX56-10
BCX54-16
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM23C32000FP CMOS MASK ROM 32M-BH 4M x 8/2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time: 150ns (max.) • Supply Vbltage: single + 5V • Current consumption
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KM23C32000FP
32M-BH
150ns
64-pin
KM23C32000FP
152x16
KM23C32000FP)
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23C16000F
Abstract: No abstract text available
Text: PRELIMINARY KM23C16000FP CMOS MASK ROM 16M-BH 2M X 8/1 M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time: 150ns (max.) • Supply Vbltage: single + 5V
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KM23C16000FP
16M-BH
150ns
64-pin
KM23C16000FP)
23C16000F
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Untitled
Abstract: No abstract text available
Text: KM23C32000G CMOS MASK ROM 32M-BH 4M x 8/2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5 V • Current consumption
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KM23C32000G
32M-BH
150ns
KM23C32000G
152x16
easy150
KM23C32000G)
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Untitled
Abstract: No abstract text available
Text: CMOS MASK ROM KM23C8100FP2 8M-BH 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption
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KM23C8100FP2
150ns
64-pin
KM23C81OOFP2
KM23C8100FP2)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CMOS MASK ROM KM23V16000A G 16M-BH (2M X 8/1M x 16) CMOS MASK ROM GENERAL DESCRIPTION FEATURES • Switchable organization 2,097,152 x 8(byte mode) 1,048,578 x 16(word mode) • Fast access tim e : 200ns(max.) • Supply voltage: single+3V or +3.3V
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KM23V16000A
16M-BH
200ns
50//A
42-pin,
600mil,
44-pin,
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ADSP-1410
Abstract: SP-1410SD bm 1410 microcoded support components
Text: ANALOG DEVICES □ FEATURES 16-BH A d d re sse s w ith H igher P recision O ption» 3 0 n s A d d ress O u tp u t D elay @ 11.1M H i O peration Look-A head P ipeline V ersatile A d d ressin g H ardw are: 30 10-BH R e g isters ALU w ith Left/Right S h ift & Carry I/O
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ADSP-1410
16-BH
10-BH
48-Pin
52-Lead
WITHAOSP-1410
ADSP-1410
SP-1410SD
bm 1410
microcoded support components
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l400bb70v
Abstract: L400BB12VC
Text: AMD3 Am29LV400B 4 Megabit 512 K X 8-BH/256 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV400B
8-BH/256
16-Bit)
20-year
Am29LV400BT80
Am29LV400BB80
l400bb70v
L400BB12VC
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8 BIT ALU IC
Abstract: No abstract text available
Text: LOGIC DEVICES INC Bh E' D • SSbSTQS 0001333 2 ■ _ L29C101 16-bit ALU Slice FEATURES □ Four-Wide 2910 ALU Plus Carry Look-ahead Logic and Full 16-bit Data Paths □ High Speed, Low Power CMOS Technology □ Fast Clock Period: 35 ns Commercial, 45 ns Military
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L29C101
16-bit
16-bit
MILSTD-883,
AM29C101
CY7C9101
64-pin
68-pin
L29C101
8 BIT ALU IC
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Untitled
Abstract: No abstract text available
Text: AMD3 Am29F800B Known Good Die a Megabit 1 M x 8-BH/S12 K x 16-Blt CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations
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Am29F800B
Am29F800
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m23c3
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E 3 • DD171S1 T3Ô ■ S H 6 K 7^4142 KM23C32005G CMOS MASK ROM 32M-BH 4M x8!2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time
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DD171S1
KM23C32005G
32M-BH
150ns
100mA
KM23C32005G
7Tbm45
DG1712S
KM23C32005G)
m23c3
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY : m o s MASK ROM KM23C32000 32M-BH 2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C32000 Is a fu lly s tatic mask programmable ROM organized 2,097,152 x 16 bit. It is fabricated using s ilic o n gate CMOS process technolgy.
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KM23C32000
32M-BH
KM23C32000
150ns
100/iA
42-pin,
KM23C32000)
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