Untitled
Abstract: No abstract text available
Text: VS Vision Syst em s Gm bH / Part Num ber 664 Fe a t u r e s Can control 1x RS232 devices located virtually anywhere via Ethernet or Internet ● New: Serial port DB9 male ● LAN interface 10BaseT/100BaseTx Ethernet ● Driver automatically finds NetCom devices in the network
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RS232
10BaseT/100BaseTx
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DXW 06
Abstract: No abstract text available
Text: &30$ OH 0LFUR $3, ´+DXW GH *DPPHµ /D *DPPH P
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vp p
pr yr Hvp
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6BH7
Abstract: DCWM PR78A 91AB A13A 74g4f diac 8 v 6b p 94 8a7l 6bfp
Text: 86.-/6 \y+2`dceu] ;9<91AB?5 8978 >=D5? ?5:1E 6IFSTQIR W gah>0 7<8?86GE<6 FGE8A:G; u<?8 }Bamtdfghdj \58GJ88A 6B<? 4A7 6BAG46GF] W w84IL ?B47 HC GB hccc0p W x784? 9BE @BGBE FJ<G6;<A: u<?8 }Bam,llffkcj W 1<G;FG4A7 <AEHF; 6HEE8AG B9 kcp W *rq [ +r ?4LBHGF 4I4<?45?8
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\58GJ88A
6BAG46GF]
w84IL
rBAG46G
FG4A68
rBAG46G
6BH7
DCWM
PR78A
91AB
A13A
74g4f
diac 8 v
6b p 94
8a7l
6bfp
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TRANSISTOR bH-16
Abstract: TRANSISTOR bH-10 bh16 transistor marking BH SOT-223 BH 16 transistor BH-16 ON bh-16 marking BH-10 BH-16 SOT BH-16 transistor
Text: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.
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BCP56T1
OT-223
OT-223
inch/1000
BCP56T3
inch/4000
BCP53T1
MOUN50
TRANSISTOR bH-16
TRANSISTOR bH-10
bh16 transistor
marking BH SOT-223
BH 16 transistor
BH-16 ON
bh-16
marking BH-10
BH-16 SOT
BH-16 transistor
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TRANSISTOR bH-16
Abstract: TRANSISTOR bH-10 sot-223 body marking A G Q E bh16 transistor BCP53T1 BH bh-16 transistor with marking BH marking BH SOT-223 bh16 BH 16
Text: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.
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BCP56T1
OT-223
OT-223
inch/1000
BCP56T3
inch/4000
BCP53T1
BCP56T1/D
TRANSISTOR bH-16
TRANSISTOR bH-10
sot-223 body marking A G Q E
bh16 transistor
BCP53T1 BH
bh-16
transistor with marking BH
marking BH SOT-223
bh16
BH 16
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Untitled
Abstract: No abstract text available
Text: Si4420DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4420DY
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Si4953DY
Abstract: No abstract text available
Text: Si4953DY* Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching
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Si4953DY
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SI9945
Abstract: Si9945DY
Text: Si9945DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9945DY
SI9945
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Power MOSFET, Fairchild
Abstract: Si9410DY
Text: Si9410DY* Single N-Channel Enhancement Mode MOSFET General Description Features This N-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9410DY
Power MOSFET, Fairchild
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Si9936DY
Abstract: No abstract text available
Text: Si9936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9936DY
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PASSPORT 6480
Abstract: 5310SA NORTEL PASSPORT 6480 problem solution outline C100 C1600 PASSPORT 6480 oc3 NORTEL PASSPORT 7000 "Phone book" nortel networks passport 6420
Text: 7HFKQLFDO 6ROXWLRQ /$1 &DPSXV $70 6ROXWLRQV IRU QWHUSULVHV ES-AYSL24001 5-1 This is Module 5 of the LAN Campus ATM end-to-end solution for enterprises. LAN Campus ATM Solutions for Enterprises/Technical Solution 5-1 2EMHFWLYH In this module, you will review the LAN Campus ATM
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ES-AYSL24001
ES-AV0000000
EnteSL24001
PASSPORT 6480
5310SA
NORTEL PASSPORT 6480
problem solution outline
C100
C1600
PASSPORT 6480 oc3
NORTEL PASSPORT 7000
"Phone book"
nortel networks passport 6420
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Power MOSFET, Fairchild
Abstract: Fairchild MOSFET Si4416DY
Text: Si4416DY* Single N-Channel MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4416DY
Power MOSFET, Fairchild
Fairchild MOSFET
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Si4420DY
Abstract: w8 mosfet
Text: Si4420DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4420DY
w8 mosfet
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Untitled
Abstract: No abstract text available
Text: Si9936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9936DY
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SI9430DY
Abstract: No abstract text available
Text: Si9430DY* Single P-Channel Enhancement Mode MOSFET General Description Features This P-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9430DY
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7w66
Abstract: 7121 MOSFET 7121 D665 MTP3055V transistor W66 D666
Text: MTP3055V N-Channel Enhancement Mode Field Effect Transistor Features General Description 12 A, 60 V. RDS ON = 0.150 Ω @ VGS = 10 V This N-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls.
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MTP3055V
7w66
7121
MOSFET 7121
D665
MTP3055V
transistor W66
D666
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Si4410DY
Abstract: No abstract text available
Text: Si4410DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4410DY
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SI4412DY
Abstract: No abstract text available
Text: Si4412DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4412DY
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Untitled
Abstract: No abstract text available
Text: Complete 12-Bit A/D Converters with Programmable Gain ANALOG DEVICES □ AD368/AD369 FEATURES Low Cost Data Acquisition Systems Including: Programmable Gain Instrumentation Amplifier Track-and-Hold Amplifier 12-BH A/D Converter Digitally Controlled Gains:
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12-Bit
AD368/AD369
12-BH
AD368
AD369
50kHz
28-Pin
MIL-STD-883B
AD368/AD369
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Untitled
Abstract: No abstract text available
Text: KM23C4200B CMOS MASK ROM 4M-BH 512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 120ns (max.) • Supply voltage: single + 5V • Current consumption
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KM23C4200B
8/256K
120ns
50fjA
40-pin
KM23C4200B
KM23C4200B)
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KC156A
Abstract: ky202e K174XA2 KT809A KT805A KT610B KP350A KT808a KT920A KC213
Text: BJOJIABPHHEHKO CnPABOMHMK n o n o jiy nPOBOAHMKOBBIM nPMBOPAM H 3A aH ne 1 0 -e, nepepaöoT aH H oe KHEB «TEXHIKA* h flo n o jiH e H H o e 32.852 h2 J113 JlaBpnMenKO B. 10. J113 CnpaBOMHHK no noJiynpoBOAHHKOBbiM npnöopaM. 10-e m a., nepepaô. h A on.— K.: TexHiKa, 1984.— 424 c., hji.— BHÓjniorp.:
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XapfaKOB-57,
KC156A
ky202e
K174XA2
KT809A
KT805A
KT610B
KP350A
KT808a
KT920A
KC213
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MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
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06050L
MMBD914L
BAS16L
BAL99L
MBAV70L
MBAV99L
MBAV74
BD2835XL
MBD2836XL
MMBD2837XL
MMBF112L
MFE521
MMBF112
2N3797 equivalent
MFE131 equivalent
MPS5210
BC557 SOT23
8C448
BC459C
mfe211
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BH SMD CODE
Abstract: C3317
Text: SM D Cermet preset potentiometers Series C 04 1F M Ordering code no.: 28 004. Type HC 04 SM / C 4202 Basic design: SMD Technical data Rated resista nce range: R esistance to leran ce: Law resistance taper : Rated d issip a tio n : L im itin g e le m e n t vo ltag e:
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Facon BH 37 933
Abstract: facon bh 39933 BD 37 931 s Facon Bb 37 933 facon bh 37 741 BH 37 933 facon bd 39933 bb 36 931 bj 39933 BB36931
Text: FACON 4SE T> m 3MSbED3 ODDOGOb T B iF C N 2 3 -O FACON SEMICONDUCTEURS/SEMECONDUCTORS single phase moulded bridges 0,8 Amp to 1,5 Amp ponts m on op h asés m oulés 0,8 Amp à 1,5 Amp V RRM Typos <V V RMS rec o m m ended m ax >d on re s is tiv e lo a d
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3M5b203
FBD08
CB-198
CB-237
CB-200
Facon BH 37 933
facon bh 39933
BD 37 931 s
Facon Bb 37 933
facon bh 37 741
BH 37 933
facon bd 39933
bb 36 931
bj 39933
BB36931
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