Kostat tray
Abstract: KS-8308 CAMTEX Kostat DAEWON tray 48 DAEWON tray drawing JEDEC Kostat CERAMIC PIN GRID ARRAY CPGA AMD daewon D-12G-56LD-A13
Text: u Chapter 7 Trays CHAPTER 7 TRAYS Introduction Design and Materials Device Count per Tray and Box Tray Suppliers per Package Type Tray Dimensions Packages and Packing Publication Revision A 3/1/03 7-1 u Chapter 7 Trays INTRODUCTION Trays are used instead of tubes to protect higher
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and5-741-9148
Kostat tray
KS-8308
CAMTEX
Kostat
DAEWON tray 48
DAEWON tray drawing
JEDEC Kostat
CERAMIC PIN GRID ARRAY CPGA AMD
daewon
D-12G-56LD-A13
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smd transistor mark E13
Abstract: Modified Coffin-Manson Equation Calculations senju solder paste m10 f12 A10D10 P6K6 BGA reflow guide Senju metal flux T5 k5m6 K793 T4V4
Text: MicroStar BGAt Packaging Reference Guide Literature Number: SSYZ015B Third Edition – September 2000 MicroStar BGA is a trademark of Texas Instruments Incorporated. Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue
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SSYZ015B
smd transistor mark E13
Modified Coffin-Manson Equation Calculations
senju solder paste m10 f12
A10D10
P6K6
BGA reflow guide
Senju metal flux T5
k5m6
K793
T4V4
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samsung ddr3 ram MTBF
Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks
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BR-12-ALL-001
samsung ddr3 ram MTBF
KLM2G1HE3F-B001
KLM4G1FE3B-B001
KLMAG2GE4A-A001
k4B2G1646
KLMAG
KLM8G2FE3B-B001
K4B2G0446
klm8g
k4x2g323pd
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PCB design for very fine pitch csp package
Abstract: Senju 179GHH 37K-1 B12-246 Modified Coffin-Manson Equation Calculations Senju metal solder paste 160 e7 Semicon volume 1 SSYZ015A
Text: MicroStar BGAt Packaging Reference Guide Literature Number: SSYZ015A Second Edition – September 1999 MicroStar BGA is a trademark of Texas Instruments Incorporated. Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue
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SSYZ015A
PCB design for very fine pitch csp package
Senju
179GHH
37K-1
B12-246
Modified Coffin-Manson Equation Calculations
Senju metal solder paste
160 e7
Semicon volume 1
SSYZ015A
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IS43LR32640
Abstract: is61wv5128 Product Selector Guide is42s86400 IS46R16160B IS25LD010 IS25LD025 IS25LQ IS62WV5128DALL BGA 168
Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive, (ii) communications, (iii) digital consumer, and (iv) industrial/medical/military. These key markets all require high quality and reliability, extended temperature ranges, and long-term support. Our primary products are high speed and
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i1-44-42218428
IS43LR32640
is61wv5128
Product Selector Guide
is42s86400
IS46R16160B
IS25LD010
IS25LD025
IS25LQ
IS62WV5128DALL
BGA 168
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K9HDG08U1A
Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks
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BR-11-ALL-001
K9HDG08U1A
K9LCG08U0A
k4g10325fe-hc04
KLM2G1DEHE-B101
K9WAG08U1B-PIB0
k9gag08u0e
Ltn140at
SAMSUNG HD502HJ
hd204ui
klm2g1dehe
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Untitled
Abstract: No abstract text available
Text: IDT - Integrated Device Technology - QSpan II > CA91L862A > CA91L862A-50ILV Integrated Device Technology Products | Applications Processor Products | Search | EHB Embedded Host Bridges Support QSpan II™ Page 1 of 2 The Analog and Digital Company ™
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CA91L862A
CA91L862A-50ILV
CA91L862A50ILV
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Untitled
Abstract: No abstract text available
Text: IDT - Integrated Device Technology - QSpan II > CA91L862A > CA91L862A-50IEV Integrated Device Technology Products | Applications Processor Products | Search | EHB Embedded Host Bridges Support QSpan II™ Page 1 of 2 The Analog and Digital Company ™
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CA91L862A
CA91L862A-50IEV
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AN1780
Abstract: No abstract text available
Text: STR71xF ARM7TDMI 32-bit MCU with Flash, USB, CAN 5 timers, ADC, 10 communications interfaces Features • ■ ■ ■ ■ Core – ARM7TDMI 32-bit RISC CPU – 59 MIPS @ 66 MHz from SRAM – 45 MIPS @ 50 MHz from Flash LQFP64 10 x 10 Memories – Up to 256 Kbytes Flash program memory
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STR71xF
32-bit
LQFP64
LFBGA64
LFBGA144
AN1780
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ARM str71
Abstract: STR71 smartcard mlt 22 mlt225571 ARM7TDMI Technical Reference Manual STR710FZ2 STR711FR1 ISO7816-3 LFBGA144 LFBGA64
Text: STR71xF ARM7TDMI 32-bit MCU with Flash, USB, CAN 5 timers, ADC, 10 communications interfaces Features • ■ ■ ■ ■ Core – ARM7TDMI 32-bit RISC CPU – 59 MIPS @ 66 MHz from SRAM – 45 MIPS @ 50 MHz from Flash LQFP64 10 x 10 Memories – Up to 256 Kbytes Flash program memory
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STR71xF
32-bit
LQFP64
LFBGA64
LFBGA144
ARM str71
STR71 smartcard
mlt 22
mlt225571
ARM7TDMI Technical Reference Manual
STR710FZ2
STR711FR1
ISO7816-3
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Untitled
Abstract: No abstract text available
Text: T E X A S I N S T R U M E N T S - P R O D U C T I ON D ATA Stellaris LM3S1512 Microcontroller DATA SH E E T DS - LM 3S 1512 -1 2 7 4 6 .2 5 1 5 S P M S 018H C opyri ght 2007- 2012 Texas Instruments Incorpor at ed Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments
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LM3S1512
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K9F2G08U0C
Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
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BR-10-ALL-001
K9F2G08U0C
K9K8G08U0D
K9ABG08U0A
K4X2G323PC
K9F4G08U0B-PCB0
K9F1G08U0C
K9F2G08U0B
K9F2G08U0B-PCB0
K9F1G08U0D-SCB0
K9WBG08U1M-PIB0
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NATIONAL SEMICONDUCTOR MARKING TYPE
Abstract: SEMICONDUCTOR PACKAGING ASSEMBLY TECHNOLOGY national semiconductor packaging QFP PACKAGE thermal resistance Thermal Considerations for Surface Mount Packages national semiconductor databook
Text: Introduction Thank you for selecting National Semiconductor products. National Semiconductor’s products find wide use in applications ranging from the latest personal computers to lightweight portable consumer products. As next generation electronic systems require higher levels of performance, device
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Untitled
Abstract: No abstract text available
Text: 128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V3576S IDT71V3578S The IDT71V3576/78 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V3576/78 SRAMs contain write, data,
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IDT71V3576S
IDT71V3578S
IDT71V3576/78
36/256K
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Untitled
Abstract: No abstract text available
Text: N18S1825F1A N18S1833F1A N18S3625F1A N18S3633F1A Advance Information NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Flow-Thru SRAMs Features • • • • • •
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N18S1825F1A
N18S1833F1A
N18S3625F1A
N18S3633F1A
133MHz
N18SXX
100-pin
119-ball
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676 BGA package tray
Abstract: No abstract text available
Text: Search by Part Number Search Site by k eyword Contact IDT | Investors | Press Calculators | Cross Reference | Green Initiative | Military | Parametric Search | Search by Part Number, Keyw ord, Document, Green/Pb-Free, Package Home > Products > PCI Express Switches > I/O Expansion Switches > 89HPES24T3G2 > 89HPES24T3G2ZBBR8
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89HPES24T3G2
89HPES24T3G2ZBBR8
89HPES24T3G2
BR676)
30C/60
48hrs
PES24T3G2
676 BGA package tray
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PES24T3G2
Abstract: No abstract text available
Text: Search by Part Number Search Site by k eyword Contact IDT | Investors | Press Calculators | Cross Reference | Green Initiative | Military | Parametric Search | Search by Part Number, Keyw ord, Document, Green/Pb-Free, Package Home > Products > PCI Express Switches > I/O Expansion Switches > 89HPES24T3G2 > 89HPES24T3G2ZBALG8
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89HPES24T3G2
89HPES24T3G2ZBALG8
89HPES24T3G2
ALG324)
72hrs
30C/60
48hrs
PES24T3G2
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Untitled
Abstract: No abstract text available
Text: Search by Part Number Search Site by k eyword Contact IDT | Investors | Press Calculators | Cross Reference | Green Initiative | Military | Parametric Search | Search by Part Number, Keyw ord, Document, Green/Pb-Free, Package Home > Products > PCI Express Switches > I/O Expansion Switches > 89HPES24T3G2 > 89HPES24T3G2ZBBR
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89HPES24T3G2
89HPES24T3G2ZBBR
89HPES24T3G2
BR676)
30C/60
48hrs
PES24T3G2
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Untitled
Abstract: No abstract text available
Text: N18S1825P1 2 A N18S1833P1(2)A N18S3625P1(2)A N18S3633P1(2)A Advance Information NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Pipeline SRAMs Features • • •
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N18S1825P1
N18S1833P1
N18S3625P1
N18S3633P1
200MHz
N18SXX
100-pin
119-ball
23618-B
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LTM4600
Abstract: No abstract text available
Text: LTM4600 10A High Efficiency DC/DC µModule Features n n n n n n n n n n n n n n Description Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 20V 10A DC, 14A Peak Output Current Parallel Two µModule DC/DC Converters for 20A Output Current
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LTM4600
com/LTM4600
4600fd
LTM4600
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N18N3625P1AQ-20C
Abstract: No abstract text available
Text: N18N1825P1A N18N1833P1A N18N3625P1A N18N3633P1A Advance Information NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Pipeline SRAMs with Fast bus Turnaround FTRAMTM Architecture
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N18N1825P1A
N18N1833P1A
N18N3625P1A
N18N3633P1A
200MHz
N18NXX
100-pin
119-ball
23166-B
N18N3625P1AQ-20C
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X1880
Abstract: N18N1825F1AG N18N3625F1AQ-13C
Text: N18N1825F1A N18N1833F1A N18N3625F1A N18N3633F1A Advance Information NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Flow-Thru SRAMs with Fast bus Turnaround FTRAMTM Architecture
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N18N1825F1A
N18N1833F1A
N18N3625F1A
N18N3633F1A
133MHz
N18NXX
100-pin
119-ball
X1880
N18N1825F1AG
N18N3625F1AQ-13C
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Untitled
Abstract: No abstract text available
Text: LTM4600HV 10A, 28VIN High Efficiency DC/DC µModule Features n n n n n n n n n n n Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 28V 10A DC, 12A Peak Output Current Parallel Two µModule DC/DC Converters for 20A Output Current 0.6V to 5V Output Voltage
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LTM4600HV
28VIN
LTM4600HVMPV)
com/LTM4600HV
4600hvfe
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SSDPAPS0004G1
Abstract: HBM 00-07H intel nand flash pf29f32 SSDPAPS0002G1 317505-003US ssd schematic 16GB Nand flash dual channel intel nand flash memory PF29
Text: Intel Z-P140 PATA Solid State Drive SSDPAPS0002G1, SSDPAPS0004G1 Product Manual Product Features Capacities — 2 GB extensible to 4 GB using Intel SD54B NAND Flash Memory components — 4 GB (extensible to 16 GB using Intel SD58B NAND Flash Memory components)
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Z-P140
SSDPAPS0002G1,
SSDPAPS0004G1
SD54B
SD58B
318890-003US
SSDPAPS0004G1
HBM 00-07H
intel nand flash
pf29f32
SSDPAPS0002G1
317505-003US
ssd schematic
16GB Nand flash dual channel
intel nand flash memory
PF29
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