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    BGA 48 "8 X 8" MEMORY MICRON Search Results

    BGA 48 "8 X 8" MEMORY MICRON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CYD36S36V18-167BGXI Rochester Electronics 1MX36 DUAL-PORT SRAM, 4ns, PBGA484, 27 X 27 MM, 2.33 MM HEIGHT, 1 MM PITCH, LEAD FREE, PLASTIC, BGA-484 Visit Rochester Electronics Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    MC28F008-10/B Rochester Electronics LLC EEPROM, Visit Rochester Electronics LLC Buy
    HM3-6504B-9 Rochester Electronics LLC Standard SRAM, 4KX1, 220ns, CMOS, PDIP18 Visit Rochester Electronics LLC Buy
    HM1-6516-9 Rochester Electronics LLC Standard SRAM, 2KX8, 200ns, CMOS, CDIP24 Visit Rochester Electronics LLC Buy

    BGA 48 "8 X 8" MEMORY MICRON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOP 8 200MIL

    Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
    Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with


    Original     		PDF D-85622 REJ01C0001-0100Z SOP 8 200MIL serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash

    vhdl code for dice game

    Abstract: Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet
    Text: Product Selector Guide Communications Products Description Pins Part Number Freq. Range Mbps ICC (mA) Packages* 3.3V SONET/SDH PMD Transceiver 2.5V SiGe Low Power SONET/SDH Transceiver SONET/SDH Transceiver w/ 100K Logic 2.5 G-Link w/ 100K Logic OC-48 Packet Over SONET (POS) Framer


    Original     		PDF OC-48 CYS25G0101DX CYS25G0102 CYS25G01K100 CYP25G01K100 CY7C9536 CY7C955 CY7B952 CY7B951 10BASE vhdl code for dice game Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet

    tms3200m642

    Abstract: tms320dm270 TNETW1130 DM270 tms320dsc DSP TMS320DM270 AM 5766 analog DVB smart card rs232 iris convert hdtv decoder to modem for browsing "full hd" mobile phone camera pinout
    Text: R E A L W O R L D S P I G N A L TM R O C E S S I N G Video and Imaging Solutions Guide Amplifiers, Audio/Video Codecs, Clock Distribution, Data Converters, Digital Light Processing , Digital Media Processors, Digital Signal Processors, Interface, Logic,


    Original     		PDF MSP430 SLYB099B tms3200m642 tms320dm270 TNETW1130 DM270 tms320dsc DSP TMS320DM270 AM 5766 analog DVB smart card rs232 iris convert hdtv decoder to modem for browsing "full hd" mobile phone camera pinout

    Samsung EOL

    Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
    Text: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM


    Original     		PDF 288-576Mb 10-20ns 18-72Mb 64Kb-16Mb 8Mb-64Mb 16Mb-512Mb 16Mb-1Gb 256Mb-2Gb 200Mhz -40oC Samsung EOL IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E

    MICRON mcp

    Abstract: PC28F256P30B P30-65nm PC28F256P PC28F256P30BFF PF48F4400P0VBQEF PC28F256P30BFE JS28F256P30BF Micron 512MB NOR FLASH PF48F
    Text: 256Mb and 512Mb 256Mb/256Mb , P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx Features • Security – One-Time Programmable Register: 64 OTP bits,


    Original     		PDF 256Mb 512Mb 256Mb/256Mb) P30-65nm P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, MICRON mcp PC28F256P30B PC28F256P PC28F256P30BFF PF48F4400P0VBQEF PC28F256P30BFE JS28F256P30BF Micron 512MB NOR FLASH PF48F

    M25P08

    Abstract: MD2800-D08 pmc flash pm49fl004t-33jc MD2810-D08 m25p04 SDTB-128 MD2811-D32-V3 M25P08-V-MN-6-T Sandisk TSOP EPROM databook am27c256 120
    Text: SST Base Memory Cross Reference Table Silicon Storage Technology, Inc. Density Voltage Organized as x8/ x16 SST AMD ST Microelectronics Atmel Intel Winbond Flash 512K 5V 8 SST39SF512; SST29EE512 AM28F512 M29F512 AT49F512, AT29C512 - W29EE512 1M 5V 8 SST39SF010; SST29EE010


    Original     		PDF SST39SF512; SST29EE512 AM28F512 M29F512 AT49F512, AT29C512 W29EE512 SST39SF010; SST29EE010 AM29F010, M25P08 MD2800-D08 pmc flash pm49fl004t-33jc MD2810-D08 m25p04 SDTB-128 MD2811-D32-V3 M25P08-V-MN-6-T Sandisk TSOP EPROM databook am27c256 120

    RC48F4400P0VB0E

    Abstract: PC28F256P30BFF MICRON mcp pf48f4400p0vbqe rc28F256P30TFE
    Text: 256Mb and 512Mb 256Mb/256Mb , P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx Features • Security – One-Time Programmable Register: 64 OTP bits,


    Original     		PDF 256Mb 512Mb 256Mb/256Mb) P30-65nm P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, RC48F4400P0VB0E PC28F256P30BFF MICRON mcp pf48f4400p0vbqe rc28F256P30TFE

    8291

    Abstract: tsop sensor tsop sensors K4S560832
    Text: Data Sheet Part No. ISSD32M16STC Irvine Sensors Corporation Microelectronics Products Division 512 Mbit 32M x 16 Synchronous DRAM Memory Stack Features: q Low Profile: same PCB footprint as a


    Original     		PDF ISSD32M16STC 256Mbit 8291 tsop sensor tsop sensors K4S560832

    tsop sensor

    Abstract: tsop sensors K4S640832 BGA 48 "8 x 8" memory micron
    Text: Data Sheet Part No. ISSD8M16STC Irvine Sensors Corporation Microelectronics Products Division 128 Mbit 8M x 16 Synchronous DRAM Memory Stack Features: q Low Profile: same PCB footprint as a


    Original     		PDF ISSD8M16STC tsop sensor tsop sensors K4S640832 BGA 48 "8 x 8" memory micron

    Untitled

    Abstract: No abstract text available
    Text: 512Mb, 1Gb, 2Gb: P33-65nm Features Micron Parallel NOR Flash Embedded Memory P33-65nm JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA JS28F00AP33BFA, JS28F00AP33TFA, JS28F00AP33EFA PC28F00AP33BFA, PC28F00AP33TFA, PC28F00AP33EFA,


    Original     		PDF 512Mb, P33-65nm P33-65nm) JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA JS28F00AP33BFA,

    tsop sensor

    Abstract: TSOP 54 PIN footprint K4S280832 ISSD16M16STC tsop sensors 256 pin bga pinout Irvine Sensors
    Text: Data Sheet Part No. ISSD16M16STC Irvine Sensors Corporation Microelectronics Products Division 256 Mbit 16M x 16 Synchronous DRAM Memory Stack Features: q Low Profile: same PCB footprint as a


    Original     		PDF ISSD16M16STC tsop sensor TSOP 54 PIN footprint K4S280832 ISSD16M16STC tsop sensors 256 pin bga pinout Irvine Sensors

    K4S280432

    Abstract: tsop sensor 8291 tsop sensors samsung NAND FLASH BGA micron BGA SDRAM 48 tsop flash pinout
    Text: Data Sheet Part No. ISSD32M8STB Irvine Sensors Corporation Microelectronics Products Division 256 Mbit 32M x 8 Synchronous DRAM Memory Stack Features: q Low Profile: same PCB footprint as a


    Original     		PDF ISSD32M8STB K4S280432 tsop sensor 8291 tsop sensors samsung NAND FLASH BGA micron BGA SDRAM 48 tsop flash pinout

    Untitled

    Abstract: No abstract text available
    Text: 256Mb and 512Mb 256Mb/256Mb , P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx Features • Security – One-time programmable register: 64 OTP bits,


    Original     		PDF 256Mb 512Mb 256Mb/256Mb) P30-65nm P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex,

    tsop sensor

    Abstract: K4S560432
    Text: Data Sheet Part No. ISSD64M8LTB Irvine Sensors Corporation Microelectronics Products Division 512 Mbit 64M x 8 Synchronous DRAM Memory Stack Features: q Low Profile: same PCB footprint as a


    Original     		PDF ISSD64M8LTB tsop sensor K4S560432

    tsop sensors

    Abstract: K4S560832B toshiba Nand flash bga stc 3001
    Text: Data Sheet Part No. ISSD64M8STC Irvine Sensors Corporation Microelectronics Products Division 512 Mbit 64M x 8 Synchronous DRAM Memory Stack Features: q Low Profile: same PCB footprint as a


    Original     		PDF ISSD64M8STC tsop sensors K4S560832B toshiba Nand flash bga stc 3001

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II


    Original     		PDF GS4576C09/18/36L 144-Ball 067Gb/s/pin 4576Cxx

    GS4576C36GL-24I

    Abstract: GS4576C09GL-24I GS4576C36GL-25I GS4576C18GL-25I GS4576C09GL-25I J2/GS4576C09GL-24I
    Text: GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II


    Original     		PDF GS4576C09/18/36L 144-Ball 576Mb 067Gb/s/pin 4576Cxx GS4576C36GL-24I GS4576C09GL-24I GS4576C36GL-25I GS4576C18GL-25I GS4576C09GL-25I J2/GS4576C09GL-24I

    Irvine Sensors Corporation

    Abstract: No abstract text available
    Text: Data Sheet Part No. ISDD64M8STC Irvine Sensors Corporation Microelectronics Products Division 512Mbit 64M x 8 DDR DRAM Memory Stack Features: q q Low Profile: same PCB footprint as a


    Original     		PDF ISDD64M8STC 512Mbit Irvine Sensors Corporation

    TSOP 54 PIN footprint

    Abstract: 256MBIT NOR FLASH tsop sensors Micron NAND DQS ddr 3 tsop k4h280838 stc 3001 256-MBIT
    Text: Data Sheet Part No. ISDD32M8STC Irvine Sensors Corporation Microelectronics Products Division 256Mbit 32M x 8 DDR DRAM Memory Stack Features: q q Low Profile: same PCB footprint as a


    Original     		PDF ISDD32M8STC 256Mbit a256Mbit TSOP 54 PIN footprint 256MBIT NOR FLASH tsop sensors Micron NAND DQS ddr 3 tsop k4h280838 stc 3001 256-MBIT

    tsop sensors

    Abstract: No abstract text available
    Text: Data Sheet Part No. ISSD16M8STC Irvine Sensors Corporation Microelectronics Products Division 128 Mbit 16M x 8 Synchronous DRAM Memory Stack Features: q q Low Profile: same PCB footprint as a


    Original     		PDF ISSD16M8STC tsop sensors

    K4S280832B

    Abstract: No abstract text available
    Text: Data Sheet Part No. ISSD32M8STC Irvine Sensors Corporation Microelectronics Products Division 256 Mbit 32M x 8 Synchronous DRAM Memory Stack Features: q Low Profile: same PCB footprint as a


    Original     		PDF ISSD32M8STC K4S280832B

    LLDRAM

    Abstract: No abstract text available
    Text: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II


    Original     		PDF GS4576C09/18/36L 144-Ball 067Gb/s/pin 4576Cxx LLDRAM

    K4S281632

    Abstract: TSOP sensor ISSD16M16STD micron NAND FLASH BGA
    Text: Short Form Data Sheet Part No. ISSD16M16STD Irvine Sensors Corporation Microelectronics Products Division 256 Mbit 16M x 16 Synchronous DRAM Memory Stack Features:


    Original     		PDF ISSD16M16STD K4S281632 TSOP sensor ISSD16M16STD micron NAND FLASH BGA

    K4S641632

    Abstract: samsung k4s641632 SAMSUNG TSOP ISSD8M16STD
    Text: Short Form Data Sheet Part No. ISSD8M16STD Irvine Sensors Corporation Microelectronics Products Division 128 Mbit 8M x 16 Synchronous DRAM Memory Stack Features:


    Original     		PDF ISSD8M16STD K4S641632 samsung k4s641632 SAMSUNG TSOP ISSD8M16STD