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    BFR520 TRANSISTOR Search Results

    BFR520 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    BFR520 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RF TRANSISTOR 1.5 GHZ

    Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 3 GHZ zo 103 ma Types of Radar 1.2 ghz tuner radar circuit component transistor equivalent table MRA705 RF TRANSISTOR 2.5 GHZ s parameter
    Text: BFR520 NPN 9 GHz wideband transistor Rev. 03 — 1 September 2004 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ High power gain


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    BFR520 BFR520 RF TRANSISTOR 1.5 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 3 GHZ zo 103 ma Types of Radar 1.2 ghz tuner radar circuit component transistor equivalent table MRA705 RF TRANSISTOR 2.5 GHZ s parameter PDF

    BFR520

    Abstract: MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR520 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 telephones CT1, CT2, DECT, etc. ,


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    BFR520 BFR520 MSB003 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN 9 GHz wideband transistor crystal DESCRIPTION X3A-BFR520 MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied as whole wafer, fully tested but unsawn.


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    X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173) Fau134) PDF

    Untitled

    Abstract: No abstract text available
    Text: bbSBTBl 003221b A23 Philips Semiconductors Product specification W A P X NPN 9 GHz wideband transistor crystal X3A-BFR520 . . N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied


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    003221b X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173) PDF

    bfr520

    Abstract: No abstract text available
    Text: SO T2 3 BFR520 NPN 9 GHz wideband transistor Rev. 4 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits   


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    BFR520 BFR520 PDF

    BFG520

    Abstract: X3A-BFR520 SOT173 BFP520 BFR520 SOT-173
    Text: P h ilip s S em icon du ctors Produ ct specification •T'3 1-9-0 NPN 9 GHz wideband transistor crystal X3A-BFR520 StE » PHILIPS INTERNATIONAL DESCRIPTION 711DfiEb DDMblOb 2b5 M E C H A N IC A L DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied


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    X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173) X3A-BFR520 711DfiEb RV-3-5-52/733 BFG520 SOT173 BFP520 BFR520 SOT-173 PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 BFR520 NPN 9 GHz wideband transistor Rev. 4 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits   


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    BFR520 BFR520 PDF

    SOT173

    Abstract: BFR520 transistor BFG520 BFP520 BFR520 X3A-BFR520
    Text: bbSBTBl 0G3221b ÔE3 W A P X Philips Semiconductors Product specification NPN 9 GHz wideband transistor crystal X3A-BFR520 N AMER PHILIP S/D ISCRETE DESCRIPTION b'IE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied


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    0G32Slb X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173) X3A-BFR520 URV-3-5-52/733 SOT173 BFR520 transistor BFG520 BFP520 BFR520 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bbS3T31 00ESS33 7flb APX N AflER PHI LIPS/DISCRETE NPN 9 GHz wideband transistor FEATURES Product specification b?E ]> BFR520 e PINNING • High power gain • Low noise figure PIN DESCRIPTION Code: N28 • High transition frequency


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    bbS3T31 00ESS33 BFR520 BFR520 PDF

    Transistor A111

    Abstract: No abstract text available
    Text: ^zmi-L.onau.cto'i , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN RF Transistor BFR520 DESCRIPTION • High Power Gain ^^ • High Current Gain Bandwidth Product SOT- 2 3 package


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    BFR520 900MHz 150T150 Transistor A111 PDF

    15 w RF POWER TRANSISTOR NPN

    Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ high gain low capacitance NPN transistor BFR520 transistor RF TRANSISTOR RF NPN POWER TRANSISTOR 3 GHZ RF frontend RF POWER TRANSISTOR NPN RF TRANSISTOR 1.5 GHZ BFR520
    Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFR520 DESCRIPTION •High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones,


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    BFR520 900MHz S21e2 15 w RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 2.5 GHZ high gain low capacitance NPN transistor BFR520 transistor RF TRANSISTOR RF NPN POWER TRANSISTOR 3 GHZ RF frontend RF POWER TRANSISTOR NPN RF TRANSISTOR 1.5 GHZ BFR520 PDF

    MRA705

    Abstract: BFR520 MSB003 BFR520 transistor
    Text: Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 telephones CT1, CT2, DECT, etc. , radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems. FEATURES • High power gain • Low noise figure


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    BFR520 MSB003 MRA705 BFR520 transistor PDF

    BFR520

    Abstract: 900MHZ
    Text: BFR520 NPN 9 GHz RF Wideband Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 SOT-23 FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. The transistor is encapsulated in a plastic SOT23 envelope.


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    BFR520 OT-23 BFR520 06-Feb-07 OT-23 900MHZ PDF

    Untitled

    Abstract: No abstract text available
    Text: X3A-BFR520 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15â V(BR)CBO (V)20 I(C) Max. (A)70m Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)6


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    X3A-BFR520 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR520 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15â V(BR)CBO (V)20 I(C) Max. (A)70m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)6


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    BFR520 PDF

    smd transistor jst

    Abstract: BFG520 bfr505 BFG505 BFR50 BFR520 S221 Y parameters of transistors
    Text: Philips Semiconductors 900 MHz low noise amplifier demoboard Appl,cation report 9 00 MHz LOW NOISE AMPLIFIER DEMOBOARD Summary: The p erformance of wideband transistors, BFG505 BFG520, BFR505, BFR520 is demonstrated in a 900 MHz Low N oise A m p l i f i e r in the frontend of a subscriber handset, (i.e.


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    BFG505 BFG520, BFR50 BFR520) OT323 OT143 BFG505: BFG505 OT143 LNA505 smd transistor jst BFG520 bfr505 BFR520 S221 Y parameters of transistors PDF

    NFE 02 352

    Abstract: KMI 814 equivalent transistor 2 SA 1469 BFR520 BF 914 transistor MRA 843 MRA transistor transistor MJE -1103 ic LC 8712
    Text: 2 ÏÏ£ â S iïi£ S ïiiS 0 0 2 5 5 3 3 N A P IE R 7 flb • P H IL IP S /D IS C R E T E APX Product specification D fe,7 E NPN 9 GHz wideband transistor FEATURES ^ BFR520 PINNING • High power gain • Low noise figure • High transition frequency


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    0DES533 BFR520 BFR520 tra1000 NFE 02 352 KMI 814 equivalent transistor 2 SA 1469 BF 914 transistor MRA 843 MRA transistor transistor MJE -1103 ic LC 8712 PDF

    BFG591 amplifier

    Abstract: SC08a bfr591 sot173x BB544 sot122 sot172 bfg65 sot143 SIEMENS BFP520 macro-X ceramic
    Text: Philips Semiconductors Semiconductors for Telecom systems Selection List General For further information, refer to Data Handbook S C 1 4,1993; "RF Wideband Transistors", except otherwise specified. RF wideband transisto rs March 1993 14 Philips Semiconductors


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    OT122 OT143 OT223 OT323 BFS17W BFG17A BFG16A BF547W BF747W BFT25 BFG591 amplifier SC08a bfr591 sot173x BB544 sot122 sot172 bfg65 sot143 SIEMENS BFP520 macro-X ceramic PDF

    BFQ67W

    Abstract: PMBT3640 PMBTH10 BFM520
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Wideband Transistors 1997 Nov 24 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Selection guide FIRST GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.5 GHz PACKAGE


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    OT143 OT223 OT323 BFT25 BF747 BF547 BF547W BFS17 BFS17W BF689K BFQ67W PMBT3640 PMBTH10 BFM520 PDF

    volterra

    Abstract: VOLTERRA VT b2c2 poon Modelling VOLTERRA -VSC1294-LF.D.G.B BFR520 CT-20 BFR520 transistor quasi
    Text: 1994 Bipolar/BiCMOS Circuits & Technology Meeting 3.2 Advanced modelling of distortion effects in bipolar transistors using the Mextram model L.C.N. de Vreede, H.C. de Graaff, K. Mouthaan, M. de Kok, J.L. Tauritz and R.G.F. Baets Delft University of Technology, Dept, of Electrical Engineering


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    CT-20, volterra VOLTERRA VT b2c2 poon Modelling VOLTERRA -VSC1294-LF.D.G.B BFR520 CT-20 BFR520 transistor quasi PDF

    BFG591 amplifier

    Abstract: BFM520 BFM505 BFC505 BFC520 BFE505 sot172 Philips Semiconductors Selection Guide bf763 S0T343
    Text: Philips Semiconductors RF Wideband Transistors Selection guide FIRST GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.5 GHz PACKAGE fT / l c CURVE (see Fig.1 ) LEADED SOT54 SURFACE-MOUNT SOT23 SOT89 SOT143 SOT223 SOT323 (1) BFT25 (2) BF747 BF547 BF547W BFS17


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    BF689K BF763 BFT25 BF747 BF547 BFS17 BFS17A BFR53 BFQ17 BFG17A BFG591 amplifier BFM520 BFM505 BFC505 BFC520 BFE505 sot172 Philips Semiconductors Selection Guide S0T343 PDF

    SOT23 W1P

    Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
    Text: DISCRETE SEMICONDUCTORS Marking codes RF Wideband Transistors Supersedes data of 1997 Nov 21 1999 Jul 21 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 BF547W BF747 BFC505 SOT23


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    BF547 BF547W BF747 BFC505 OT323 OT353 OT143 SOT23 W1P MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323 PDF

    SOT23 W1P

    Abstract: BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code
    Text: Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 SOT23 BF547W BF689K SOT323 SOT54 BF747 SOT23 SOT54 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 BFG10/X BFG10W/X BFG11 BFG11/X BFG11W/X


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    BF547 BF547W BF689K BF747 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 SOT23 W1P BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code PDF

    BFG540 N43

    Abstract: w1p 22 SOT23 W1P sot143 Marking code V12 "W1P" f763 SOT89 MARKING CODE marking code V3 SOT89 N5 MARKING CODE V3 marking code
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes RF Wideband Transistors 1997 Nov 22 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE MARKING CODE


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    BF547 BF547W BF689K BF747 OT323 OT353 OT143 BFG540 N43 w1p 22 SOT23 W1P sot143 Marking code V12 "W1P" f763 SOT89 MARKING CODE marking code V3 SOT89 N5 MARKING CODE V3 marking code PDF