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    BFR183 Search Results

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    BFR183 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BFR183E6327HTSA1

    RF TRANS NPN 12V 8GHZ SOT-23
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    DigiKey BFR183E6327HTSA1 Digi-Reel 17,321 1
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    BFR183E6327HTSA1 Reel 15,000 3,000
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    Mouser Electronics BFR183E6327HTSA1 7,463
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    Rochester Electronics BFR183E6327HTSA1 4,690 1
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    Infineon Technologies AG BFR-183T-E6327

    RF TRANS NPN 12V 8GHZ PG-SC75-3D
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    DigiKey BFR-183T-E6327 Reel 6,000
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    Infineon Technologies AG BFR-183W-E6327

    RF TRANS NPN 12V 8GHZ PG-SOT-323
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    DigiKey BFR-183W-E6327 Digi-Reel 1
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    BFR-183W-E6327 Cut Tape 1
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    Infineon Technologies AG BFR183WH6327XTSA1

    RF TRANS NPN 12V 8GHZ PG-SOT-323
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    Infineon Technologies AG BFR 183 E6327

    RF Bipolar Transistors NPN RF Transistor 12V 65mA 450mW
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    Mouser Electronics BFR 183 E6327 9,109
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    BFR183 Datasheets (25)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    BFR183 Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFR183 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFR183 Siemens NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA) Original PDF
    BFR183 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFR183E6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 12V SOT-23 Original PDF
    BFR183E6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 12V SOT-23 Original PDF
    BFR183F Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFR183FE6327 Infineon Technologies TRANS GP BJT NPN 12V 0.065A 3 pin SOT-23 T/R Original PDF
    BFR183T Infineon Technologies NPN Silicon RF transistor for low noise, high gain broadband amplifiers in SC75 package Original PDF
    BFR183T Vishay Telefunken Silicon NPN Planar RF Transistor Original PDF
    BFR 183T E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 12V SC-75 Original PDF
    BFR183TE6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 12V SC-75 Original PDF
    BFR183TE6327 Infineon Technologies TRANS GP BJT NPN 12V 0.065A 3SC-75 T/R Original PDF
    BFR183TF Vishay Siliconix Transistors, RF & AF Original PDF
    BFR183TW Vishay Intertechnology Silicon NPN Planar RF Transistor Original PDF
    BFR183TW Vishay Telefunken Silicon NPN Planar RF Transistor Original PDF
    BFR183TW-GS08 Vishay TRANS GP BJT NPN 10V 0.065A 3SOT-323 T/R Original PDF
    BFR183W Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFR183W Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFR183W Siemens NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA) Original PDF

    BFR183 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR183TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original     		BFR183TF OT-490 D-74025 28-Apr-05 PDF

    BFR183T

    Abstract: Telefunken
    Text: BFR183T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure D High power gain


    Original     		BFR183T D-74025 17-Apr-96 BFR183T Telefunken PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR183T NPN Silicon RF Transistor Preliminary data 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFR183T VPS05996 PDF

    BFR183TF

    Abstract: No abstract text available
    Text: BFR183TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original     		BFR183TF OT-490 OT-490 D-74025 30-Aug-04 BFR183TF PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR183W Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 3 2 1 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free RoHS compliant and halogen-free package with visible leads


    Original     		BFR183W AEC-Q101 OT323 PDF

    BFR183T

    Abstract: BFR183TW
    Text: BFR183T/BFR183TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure


    Original     		BFR183T/BFR183TW BFR183T BFR183TW D-74025 20-Jan-99 PDF

    BFR183T

    Abstract: BFR183TW
    Text: BFR183T/BFR183TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure


    Original     		BFR183T/BFR183TW BFR183T BFR183TW D-74025 20-Jan-99 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR183T/BFR183TW Y Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications For low noise and high gain broadband am plifiers at co lle ctor currents from 2 mA to 30 mA. Features


    OCR Scan     		BFR183T/BFR183TW 183TW D-74025 20-Jan-99 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR183T / BFR183TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • 1 Low noise figure High power gain e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 1 Applications For low noise and high gain broadband amplifiers at


    Original     		BFR183T BFR183TW 2002/95/EC 2002/96/EC OT-23 BFR183TW OT-323 D-74025 28-Apr-05 PDF

    BFR183

    Abstract: BCW66
    Text: BFR183 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		BFR183 BFR183 BCW66 PDF

    BFR183T

    Abstract: BFR183TW
    Text: BFR183T/BFR183TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure


    Original     		BFR183T/BFR183TW BFR183T BFR183TW D-74025 20-Jan-99 PDF

    BFR18

    Abstract: BFR183W VSO05561 SPICE 2G6
    Text: BFR183W NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		BFR183W VSO05561 OT323 BFR18 BFR183W VSO05561 SPICE 2G6 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR183T/BFR183TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure


    Original     		BFR183T/BFR183TW BFR183T BFR183TW D-74025 20-Jan-99 PDF

    BFR183T

    Abstract: BFR183TW
    Text: BFR183T / BFR183TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • 1 Low noise figure High power gain e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 1 Applications For low noise and high gain broadband amplifiers at


    Original     		BFR183T BFR183TW 2002/95/EC 2002/96/EC BFR183T OT-23 OT-323 08-Apr-05 BFR183TW PDF

    BFR183W

    Abstract: transistor marking RHs BCR108W
    Text: BFR183W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 3 2 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		BFR183W OT323 BFR183W transistor marking RHs BCR108W PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR183T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFR183T PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR183T NPN Silicon RF Transistor Preliminary data 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFR183T VPS05996 PDF

    BFR183W

    Abstract: No abstract text available
    Text: BFR183W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 3 2 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFR183W OT323 BFR183W PDF

    BFR183TF

    Abstract: No abstract text available
    Text: BFR183TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original     		BFR183TF OT490 OT490 D-74025 23-Sep-02 BFR183TF PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR183TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original     		BFR183TF OT-490 08-Apr-05 PDF

    marking RH

    Abstract: No abstract text available
    Text: Tem ic BFR183T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor £ Electrostatic sensitive device. Observe precautions for handling. M Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 inA. Features


    OCR Scan     		BFR183T 1S21e 17-Apr-96 marking RH PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR183 NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		BFR183 VPS05161 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR183W NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		BFR183W VSO05561 OT323 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR183 NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		BFR183 VPS05161 PDF