BFQ233
Abstract: BFQ253A BFQ233A BFQ253
Text: Product specification Philips Sem iconductors NPN 1 GHz video transistors PHILIPS INTERNATIONAL DESCRIPTION BFQ233; BFQ233A SbE I> m 7110flSb 00455^0 Tûb • PHIN PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with emitter-ballasting resistors and a
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T-33-05
BFQ233;
BFQ233A
7110fl2b
BFQ253
BFQ253A
MBB634
BFQ233
BFQ233A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors M bb.53^31 ODBITD1! 200 • A P X ^Productspecificatlon NPN 1 GHz video transistors BFQ233; BFQ233A 1 N AMER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with emitter-ballasting resistors and a
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BFQ233;
BFQ233A
BFQ253
BFQ253A
0D31713
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BFQ253A
Abstract: BFQ233 BFQ233A BFQ253
Text: Philips Semiconductors b b £ 3 R 3 ]i G D 3 1 7 D ti EGO NPN 1 GHz video transistors M l APX Product specification BFQ233; BFQ233A "• N AMER PHILIPS/DISCRETE DESCRIPTION blE D PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with emitter-ballasting resistors and a
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BFQ233;
BFQ233A
BFQ253
BFQ253A
MB0883
MBB434
bbS3T31
DD31713
BFQ233A
BFQ233
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128-B
Abstract: SOT128B bfq162
Text: 58 RF/Microwave Devices Video Transistors Characteristics Ratings Typo No. Pkg. •Vcbo max V ■VCEO max (V) max (mA) hFB min T, CCB max (pF> (°C) fr min (MHz) NPN BFQ161 BFQ162 BFQ163 BFQ166 BFQ231 BFQ231A BFQ232 BFQ232A BFQ233 BFQ233A BFQ234 BFQ235 BFQ235A
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BFQ161
BFQ162
BFQ163
BFQ166
BFQ231
BFQ231A
BFQ232
BFQ232A
BFQ233
BFQ233A
128-B
SOT128B
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philips bfq
Abstract: BFQ253A BFQ233 BFQ233A BFQ253
Text: Philips Semiconductors bb.53131 003173b 23T IB A P X PNP 1 GHz video transistor Product specification BFQ253; BFQ253A N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D • PINNING PNP silicon epitaxial transistor In a SOT5 TO-39 envelope with emitter-ballasting resistors and a
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03173b
BFQ253;
BFQ253A
BFQ233
BFQ233A
fcj53131
BFQ253A
philips bfq
BFQ253
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bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
bf0262a
BF0262
OM335
1N5821ID
OM336
OM2061
OM926
BUK645
OM2060
BLY94
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bb 5 3 131 0 0 3 1 7 3 b E 3T • PNP 1 GHz video transistor APX Product specification BFQ253; BFQ253A N AUER PHILIPS/DISCRETE DESCRIPTION b'lE » ■ PINNING PNP silicon epitaxial transistor In a SOT5 TO-39 envelope with emitter-ballasting resistors and a
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BFQ253;
BFQ253A
BFQ233
BFQ253
0D3173T
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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SC08b
transistor f6 13003
equivalent transistor bj 131-6
transistor Eb 13003 BM
BB112
smd TRANSISTOR code marking 2F 6n
a1211 lg
CQY58
BU705
TRANSISTOR 131-6 BJ 026
philips om350
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BFQ161
Abstract: SOT37
Text: 57 RF/Microwave Devices RF Wideband Transistors cont. Type No. BFS25A BFS505 BFS520 BFS540 BFT24 BFT25 BFT25A BFT92 BFT92AW BFT93 BFT93AW BFW16A BFW17A BFW30 BFW92 BFW92A BFW93 BFY90 Ratings M lc * Characteristics Polarity Package Outline Curve No. VcEO
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OT-323
OT-37
OT-23
BFQ161
SOT37
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BLY32
Abstract: blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier
Text: 83 RF/Microwave Devices Video Amplifiers Video Amplifier Line-Ups Application Preamp Stage B & W high resolution colour high resolution OM3016 OM925 OM975 OM3026 OM925 OM975 Output Stage OM976 Wideband Transistors for Application in Video Output Amplifiers in Monitors
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OM3016
OM3026
OM925
OM925
OM975
OM976
BFQ231
BFQ231A
BFQ251
BLY32
blf278 108 amplifier
Philips Application BLX15
RF Power Amplifiers
bgy55
blw95
BLF543
BFQ43
BLW33
blf177 108 amplifier
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BF547A
Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
Text: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS
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LCD01
BF547A
transistor bf 175
BFG65 equivalent
BF547B
BFG25AXD
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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1Ft TRANSISTOR
Abstract: properties of transistor pnp transistor 1FT BFQ233 BFQ253 ccb transistor
Text: Philips Components _ A PNP HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR PNP silicon epitaxial transistor w ith emitter ballasting resistors and a gold sandwich metallization to ensure optimum temperature profile and excellent reliability properties. It features high break-down
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BFQ253
BFQ233.
1Ft TRANSISTOR
properties of transistor pnp
transistor 1FT
BFQ233
BFQ253
ccb transistor
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