D 1398 Transistor
Abstract: d 1398 BLV98 32Q1 ci 1404
Text: N AMER PHILIPS/DISCRETE 86D OLE 0 1398 D "d • bfci53Ii31 D013b3b 3 3 - ft A ~~ BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor In SOT-171 envelope intended for use in class-B operated base station transmitters in the 900 MHz communications band.
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bfci53Ii31
D013b3b
BLV98
OT-171
BLV98
D 1398 Transistor
d 1398
32Q1
ci 1404
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Philips MAB8021
Abstract: 8048 micro controller block diagram SCN8048 MAB8021
Text: NAPC/ SI6NETICS Signetics aiE D • bfci53T54 0Q5S33Ô ñ i 7 ^ ? - / 9 - ¿S' SCN8400 Series Single-Chip 8-Bit Microcontroller Product Specification Microprocessor Products DESCRIPTION FEATURES The SCN84XX family of microcontrollers is fabricated in NMOS. The family con
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bfci53T54
0Q5S33Ô
SCN8400
SCN84XX
20-pin
SCN8422
SCN8442,
SCN8048.
100/iH
33fiH
Philips MAB8021
8048 micro controller block diagram
SCN8048
MAB8021
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E5EW
Abstract: ECG1366 dlw1
Text: 17E PHILIPS E C G INC ECG • bfci53‘ï2û 000525=] h ECG1366 5.E W AF PO Sem icon ductors Features • L o w n um ber o f external co m p on e n ts • B u ilt-in p rote ctive circu its P o w e r su pp ly surge p ro te ctio n circ u it can w ith sta n d a surge o f +40 V fo r
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bfci53`
ECQ1366
Q00S2bl
ECG1366
E5EW
ECG1366
dlw1
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BUK436-50A
Abstract: BUK436-50B SOT93 package
Text: N AMER P H I L I P S / D I S C R E T E HSE D Hi bfci53ci31 0 0 2 0 2 0 5 T Hi PowerMOS transistor BUK436-50A BUK436-50B T -3 « M GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic envelope. The device is intended to r use in
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Q0202BS
BUK436-50A
BUK436-50B
BUK436
OT-93;
T-39-T3
SOT93 package
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Philips MAB8021
Abstract: MAB8021 8048 microcontroller processor 8048 TI 8048 CPU 8048 BASED 8048 pin details signetics N28 block diagram of 8048 microcontroller SCN8048
Text: NAPC/ SI6NETICS Signetics aiE D • bfci53T54 0Q5S33Ô ñ SCN8400 Series 17 W % i9 - ô S Single-Chip 8-Bit Microcontroller c Product Specification Microprocessor Products FEATURES • l2C serial I/O that can be used in single or multimaster systems serial I/O data and clock via
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SCN8400
SCN84XX
20-pin
SCN8422
SCN8442,
SCN8048.
-C2-27pF
100/iH
56/aH
33fiH
Philips MAB8021
MAB8021
8048 microcontroller
processor 8048
TI 8048 CPU
8048 BASED
8048 pin details
signetics N28
block diagram of 8048 microcontroller
SCN8048
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common emitter amplifier
Abstract: LKE27010R amplifier marking code D
Text: 1 I N AMER PHILIPS/DISCRETE OhE D • bfci53ci31 DD3,4T47 Ü ■ MAINTENANCE TYPE LKE27010R T-33-O ST M ICRO W AVE LINEAR PO W ER TRANSISTOR NPN transistor for use in a common-emitter class-A linear power amplifier up to 3,3 GHz. Diffused emitter ballasting resistors, interdigitated structure, multiceli geometry and gold metallization
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bfci53cÃ
DD14TM7
LKE27010R
T-33-OiT
FO-53.
LKE2701
T-33-05.
to200
common emitter amplifier
amplifier marking code D
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Untitled
Abstract: No abstract text available
Text: PHILIPS E C G INC 17E ECG Semiconductors bfci53liEÛ 0004Û35 S ECG1260, ECG1261 T-74-05-01 5.5 W Audio Power Amplifier ECG1260 Features • Normal ECG1260 and Reverse (ECG1261) pin configurations for easier PC board layout. No damage for Reverse Insertion
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bfci53l
ECG1260)
ECG1261)
ECG1260
ECG1261
al120
ECG1260,
ECG1261
T-74-05-01
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1540CT
Abstract: 1545CT 1545C IEC134 PBYR1535CTF PBYR1540CTF PBYR1545CTF 1545CTF
Text: PBYR1535CTF PBYR1540CTF PBYR1545CTF N AUER P H I L I P S / D I S C R E T E 2SE D I bfci53li31 0 0 2 2 ^ 5 3 SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES 5 • ~ 7 ^ 6 1 - i7 Low-leakage p latin u m -b a rrier do ub le rec tifie r diodes in S O T -1 8 6 fu ll-p ac k plastic envelopes
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PBYR1535CTF
PBYR1540CTF
PBYR1545CTF
OT-186
T-03-17
M2284
1540CT
1545CT
1545C
IEC134
PBYR1545CTF
1545CTF
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Untitled
Abstract: No abstract text available
Text: N APIER PH IL IP S/ D IS C R ET E b^E D • bbSa^l DD3QSSS 7TM « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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-SOT186
BUK444-200A/B
BUK444
-200A
-200B
1E-03
Fk7-11
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TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT
Abstract: No abstract text available
Text: TIP125 TIP126 TIP127 _ / V SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. T O -220 plastic envelope. N-P-N complements are TIP120, TIP121
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TIP125
TIP126
TIP127
TIP120,
TIP121
TIP122.
TIP125
bti53T31
TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT
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BR210S
Abstract: TA505 50J2 BR210
Text: N AMER PHILIPS/DI SCRE TE DbE D • bbS3TBl G011011 S ■ ~ Il BR210 SERIES y T - 2 S ' O G ~ BREAKOVER DIODES A range o f glass-passivated bidirectional breakover diodes in th e T 0 -2 2 0 A C o u tlin e , available in a + / —
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Q011011
BR210
T0-220AC
BR210â
O-220AC
bb53131
DQ11Q21
M2683
Li53li31
BR210S
TA505
50J2
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BF569
Abstract: sot-23 MARKING CODE ZA Self-Oscillating mixer transistor 359 A k
Text: SILICON PLANAR EPITAXIAL TRA N SISTO R P-N-P transistor in a microminiature plastic envelope, intended for applications in thick and thin-film circuits such as self-oscillating mixer in u.h.f. tuners in conjunction with bipolar transistors or with M O S fets.
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GD1S712
BF569
OT-23
BF569
T-31-15
7Z84416
sot-23 MARKING CODE ZA
Self-Oscillating mixer
transistor 359 A k
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BbN20
Abstract: MSB003 BSN20
Text: • Philips Semiconductors — bbS3T31 a0237t,S Tib ■ N AUER P H I L I P S / D I S C R E T E APX _ „ Product specification b7E D N-channel enhancement mode vertical D-MOS transistor FEATURES BSN20 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL,
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a0237t
BSN20
btiS3T31
237hfl
BbN20
MM794
MRA78S
VaSimat25
BbN20
MSB003
BSN20
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TDA85630
Abstract: JLB671 TDA8563Q TDA8563Q Application
Text: bbS3<ì24 0CH3Sfc>7 14T « S I C 3 Philips Semiconductors Preliminary specification 2 x 40 W/2 Q stereo BTL car radio power amplifier with diagnostic facility TDA8563Q FEATURES • Thermally protected • Requires very few external components • Reverse polarity safe
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TDA8563Q
TDA85630
JLB671
TDA8563Q
TDA8563Q Application
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BFR94
Abstract: Ferroxcube cross reference BFQ34 Ferroxcube core BFR94A f2nd transistor 3305
Text: N AMER PHILIPS/DISCRETE 2SE D BFQ34 is recommended for new design • bbS3T31 DOlflOTS h U 11 BFR94 T -3 3 -0 S " N-P-N H.F. WIDEBAND TRANSISTOR N-P-N resistance-stabilized transistor in a SOT-48 capstan envelope featuring extremely low cross modulation, intermodulation and second harmonic distortion. Thanks to its high transition frequency
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bbS3T31
BFQ34
BFR94
T-33-Ã
OT-48
VCE-20V
BFR94
Ferroxcube cross reference
Ferroxcube core
BFR94A
f2nd
transistor 3305
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QJ00
Abstract: ECG755 12 volt class D schematic
Text: PHILIPS E C G INC 17E D LtSaTSÔ 00034E1 ] • 7 = 7 V v ^ r ~ O J ECG755 CLASS “A” AUDIO DRIVER s e m ico n d u c to r s 0.025 E035 ECG755 is designed for driving Class " A " PNP power output transistor stage applica tions. =L=L T QJ00 0.130 _ L _ 0 ! î î S TÎ50
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00034E1
ECG755
ECG755
ECG75S
bfci53ii
QJ00
12 volt class D schematic
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BDXXX
Abstract: BDxxx-10
Text: BD135 BD137 BD139 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose n-p-n transistors in SOT-32 plastic envelope, recommended for driver stages in hi-fi amplifiers and television circuits.
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BD135
BD137
BD139
OT-32
6D136,
BD138
BD140are
BD135,
BD137
BD139
BDXXX
BDxxx-10
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Untitled
Abstract: No abstract text available
Text: N A PIER PHILIPS/DISCRETE OLE D 1,^53=131 DQ110E3 1 BR220 SERIES r - 3 5 " - OS- DUAL BREAKOVER DIODES The BR220 is a range of monolithic diffusion-isolated glass-passivated dual bidirectional breakover diodes in the TO-220AB outline, available in a + /— 12% tolerance series of nominal breakover voltage.
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DQ110E3
BR220
O-220AB
bbS3T31
0011D3S
bb53131
001103b
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K162L
Abstract: psd3xx PSD-302 8051 microcontroller philips PSD301 D071 PSD302 T12A T23A 2l3536
Text: NAPC/PHILIPS SEMICOND bb53TE4 □D71Ô41 E'lb • ISIC 3 blE ]> P re lim in a ry sp ecification P h ilip s S em ic o n d u c to rs M icro co n tro ller P eriph erals PSD302 Field-programmable microcontroller peripheral Key Features □ □ Single Chip Programmable Peripheral
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bb53TE4
DQ71641
PSD302
Chip-Set2-12B
52-pin
PSD302-15
44-pin
PSD302-15I
K162L
psd3xx
PSD-302
8051 microcontroller philips
PSD301
D071
PSD302
T12A
T23A
2l3536
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BLX67
Abstract: mrtil transistor 3568
Text: N AMER PHILIPS/DISCRETE 8 6D ObE 01766 I D 7 -" ~ j • 1^53^31 G014DDM 3 - o Jr ~ BLX67 A U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V,
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G014DDM
BLX67
T-33-Ã
BLX67
mrtil
transistor 3568
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BUK445
Abstract: K445 BUK445-500A BUK445-500B
Text: N AMER PHILIPS/DISCRETE 2SE D • ^53=131 DOSOmO =1 ■ PowerMOS transistor BUK445-500A BUK445-500B T -2 1 -0 1 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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BUK445-500A
BUK445-500B
BUK445
-500A
-500B
K445
BUK445-500B
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cnw136
Abstract: CNW4502 Optocoupler 601 BS415 BS6301 BS7002 CNW135
Text: Philips Sem iconductors Product specification Wide body high isolation, high-speed optocouplers FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum clearance of 9.6 mm and minimum creepage of 10 mm • 11 MHz bandwidth •
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CNW135/CNW136/CNW4502
elemen502
UCB372
GG3S37L
cnw136
CNW4502
Optocoupler 601
BS415
BS6301
BS7002
CNW135
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BFU310
Abstract: BFU308 BFU309 L7E transistor transistor 309
Text: ^53131 Philips Semiconductors □□E3bfl4 TT7 APX Preliminary specification N-channel silicon field-effect transistors mi N AHFR FEATURES BFU308/309/310 PHT I T P S / D T S f R F T F L7F D PIN CONFIGURATION • Low noise • Interchangeability of drain and
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BFU308/309/310
PINNING-TO-18
BFU308
BFU309
BFU310
total00
BFU308,
bfu308/309/310
BFU310
BFU309
L7E transistor
transistor 309
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Untitled
Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE D E V E L O P M E N T DATA □bE D • bbS3T31 0015147 b ■ PZ2327B15U This data sheet contains advance information and specifications are subject to change without notice. T-c 3 % - Q I MICROWAVE POW ER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended for use in a common-base, class-C broad
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bbS3T31
PZ2327B15U
bb53131
bfci53T31
7Z2412$
D01S1S5
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