JY marking transistor
Abstract: Transistor 5331 MRB11080Y
Text: N AMER P H I L I P S / D I S CR ET E ObE D • bfa53T31 0Ü1SD47 DEVELOPMENT DATA 2 m MRB11080Y T his data sheet contains advance information and specifications are subject to change w ithout notice. T -33-iiT PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended for use in military and professional applications. It operates
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fafa53T31
1SD47
MRB11080Y
FO-67
JY marking transistor
Transistor 5331
MRB11080Y
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BUZ84
Abstract: t03 package transistor pin dimensions BU184 TRANSISTOR 13-h
Text: N AMER PHILIPS/DISCRETE ObE D • ^53=131 QDlMblt 1 ■ BUZ 84 ^ - 5 ^ 1 3 PowerMOS transistor July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in
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BUZ84
Q0147QE
T-39-13
BIXZ84
BUZ84
t03 package transistor pin dimensions
BU184
TRANSISTOR 13-h
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DIODE m1
Abstract: m3062 BYQ27
Text: N AMER P H I L I P S / D I S C R E T E 5SE D • b b S B T B l 'oQSeaflS H M I - BYQ27 SERIES JL 7 T Q 3 -/7 ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward
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BYQ27
T-03-17
M1720
bbS3131
M3053
DIODE m1
m3062
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BUZ356
Abstract: T0218AA BUZ-356
Text: N AMER PH IL IP S/D ISCRETE ObE D PowerMOS transistor • =.1353^31 DQ14SH2 S BUZ356 * r= -5 l-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ356
T0218AA;
BUZ356
T-39-13
T0218AA
BUZ-356
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Philips BUP23C
Abstract: BUP23C BUP22B BUP23B 6to8
Text: N AMER P H I L I P S / D I S C R E T E 2SE tI D JU JJ D DQlfiti T3 4 I BUP23B BUP23C A T - 3 3 - / Í T -SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.
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BUP23B
BUP23C
BUP23B
BUP23B;
BUP23C.
T-33-T5
Philips BUP23C
BUP23C
BUP22B
6to8
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OM175
Abstract: OM322 philips hybrid philips hybrid amplifier modules DIN45004 IEC134 uhf amplifier module philips 74090 vHF amplifier module soldering-iron
Text: N AMER PHILIPS/DISCRETE ïf bbSBTBl OOlâBTS 7 • OM 322 2SE D L HYBRID VHF/UHF WIDE-BAND AMPLIFIER Two-stage wide-band amplifier in the hybrid technique, designed for use as distribution amplifier in MATV and CATV systems and as general-purpose amplifier for v .h .f. and
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001flQ
OM322
OM175
OM175.
DIN45004,
OM322
T-74-09-01
philips hybrid
philips hybrid amplifier modules
DIN45004
IEC134
uhf amplifier module philips
74090
vHF amplifier module
soldering-iron
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