Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BF99 Search Results

    SF Impression Pixel

    BF99 Price and Stock

    NXP Semiconductors BF991,215

    RF MOSFET 10V SOT143B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BF991,215 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    BF991,215 Cut Tape
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Newark BF991,215 Cut Tape 5
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    BF991,215 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    EBV Elektronik BF991,215 54 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    NXP Semiconductors BF992,215

    RF MOSFET 10V SOT143B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BF992,215 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Newark BF992,215 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.207
    		Buy Now

    NXP Semiconductors BF998,215

    RF MOSFET 8V SOT143B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BF998,215 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    BF998,215 Cut Tape
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Newark BF998,215 Cut Tape 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    NXP Semiconductors BF998,235

    RF MOSFET 8V SOT143B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BF998,235 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    NXP Semiconductors BF998R,235

    RF MOSFET 8V SOT143R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BF998R,235 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Find more BF99 price and stock on Findchips.com

    BF99 Datasheets (243)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BF990 Philips Semiconductors Silicon N-Channel Dual Gate MOS FET Original PDF
    BF990 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF990 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF990 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BF990A Philips Semiconductors N-Channel Dual-Gate MOS-FET Original PDF
    BF990A Philips Semiconductors Silicon N-Channel Dual Gate MOS FET Original PDF
    BF990A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF990A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF990A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BF990A Philips Semiconductors Silicon N-Channel Dual Gate MOS FET Scan PDF
    BF990AR Philips Semiconductors Silicon N-Channel Dual Gate MOS FET Original PDF
    BF990AR Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF990AR Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF990AR Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BF990AR Philips Semiconductors SILICON N-CHANNEL DUAL GATE MOS-FET Scan PDF
    BF990ART/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BF990ATR Philips Semiconductors N-channel dual-gate MOS-FET Original PDF
    BF990AT/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BF991 NXP Semiconductors BF991 - N-channel dual-gate MOS-FET - CIS TYP: 2.1 pF; COS: 1.1 pF; ID: 20 mA; IDSS: 4 to 25 mA; IDSS min.: 1.1 mA; Noise figure: 1.0@800MHz dB; Note: With external bias ; Remarks: VHF ; -V(P)GS MAX: 2.5 V; VDSmax: 20 V; YFS min.: 10 mS Original PDF
    BF991 Philips Semiconductors N-Channel Dual-Gate MOS-FET Original PDF
    ...

    BF99 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF991

    Abstract: dual-gate
    Text: BF991 N-channel dual-gate MOS-FET Rev. 03 — 20 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


    Original     		PDF BF991 BF991 dual-gate

    bf998rb

    Abstract: BF998 BF998R BF998RAW BF998RW application BF998
    Text: BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance


    Original     		PDF BF998/BF998R/BF998RW BF998R BF998 BF998RW D-74025 23-Jun-99 bf998rb BF998RAW application BF998

    Untitled

    Abstract: No abstract text available
    Text: BF996S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF tuners. Features D Integrated gate protection diodes D Low noise figure


    Original     		PDF BF996S BF996S D-74025 20-Jan-99

    application BF998

    Abstract: BF998R 800MHz BF998
    Text: BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance


    Original     		PDF BF998/BF998R/BF998RW BF998 BF998R BF998RW D-74025 23-Jun-99 application BF998 BF998R 800MHz

    Untitled

    Abstract: No abstract text available
    Text: BF995 Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz. Features D Integrated gate protection diodes


    Original     		PDF BF995 BF995 D-74025 20-Jan-99

    Untitled

    Abstract: No abstract text available
    Text: BF995 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance


    Original     		PDF BF995 2002/95/EC 2002/96/EC OT-143 08-Apr-05

    BF998RAW-GS08

    Abstract: No abstract text available
    Text: Not for new design, this product will be obsoleted soon BF998/BF998R/BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • Integrated gate protection diodes Low noise figure


    Original     		PDF BF998/BF998R/BF998RW 2002/95/EC 2002/96/EC OT143 OT143R OT343R BF998 OT143 18-Jul-08 BF998RAW-GS08

    Untitled

    Abstract: No abstract text available
    Text: BF996S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance Low input capacitance


    Original     		PDF BF996S 2002/95/EC 2002/96/EC OT-143 08-Apr-05

    BF998R 800MHz

    Abstract: BF998 BF998 VISHAY BF998R BF998RAW BF998RW BF998 depletion application BF998
    Text: BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance


    Original     		PDF BF998/BF998R/BF998RW BF998 BF998R BF998RW D-74025 23-Jun-99 BF998R 800MHz BF998 VISHAY BF998RAW BF998 depletion application BF998

    BF994

    Abstract: BF994S BF994SA BF994SB sot-143 vishay telefunken
    Text: BF994S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF TV-tuners. Features D Integrated gate protection diodes


    Original     		PDF BF994S BF994 D-74025 20-Jan-99 BF994S BF994SA BF994SB sot-143 vishay telefunken

    BF990A

    Abstract: PHILIPS MOSFET MARKING 4814 mosfet dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF990A N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF990A FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF990A OT143 SCA52 117061/00/02/pp8 BF990A PHILIPS MOSFET MARKING 4814 mosfet dual-gate

    Untitled

    Abstract: No abstract text available
    Text: BF996SR Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)20 V(BR)GSS (V)17 I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Amb.


    Original     		PDF BF996SR

    Untitled

    Abstract: No abstract text available
    Text: BF996 Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)20 V(BR)GSS (V) I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)200m¥ Minimum Operating Temp (øC) Maximum Operating Temp (øC)150þ Thermal Resistance Junc-Amb.


    Original     		PDF BF996

    BF996S

    Abstract: GPS25 829 Tetrode
    Text: BF996S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuner. Features D High cross modulation performance D Low input capacitance D High AGC-range


    Original     		PDF BF996S BF996S 30the D-74025 17-Apr-96 GPS25 829 Tetrode

    gl 1117 ax

    Abstract: BF994
    Text: Tem ic BF994S S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E lectrostatic sensitive device. O bserve precautions for handling. M Applications Input and m ixer stages especially for V H F TV-tuners. Features • Integrated gate protection diodes


    OCR Scan     		PDF BF994S BF994S 03-Mar-97 gl 1117 ax BF994

    S852T

    Abstract: BF579 T0-50 BF964S BF96 BFP183T
    Text: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15


    OCR Scan     		PDF BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T S852T BF579 T0-50 BF96 BFP183T

    fet MARKING MHp

    Abstract: sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S
    Text: BF996S PHILIPS INTERNATIONAL 5 bE D 711002b D 0 3 l+D7û ÖTß • PHIN F O R D E T A IL E D IN F O R M A T IO N SEE T H E L A T E S T ISSUE OF H A N D B O O K SC07 O R D A T A S H E E T T - 35-27 SILICON N-CHANNEL DUAL GATE MOS-FET D e pletion ty p e fie ld -e ffe c t tra n sisto r in a plastic SO T143 m icro m in ia tu re envelope w ith source and


    OCR Scan     		PDF BF996S OT143 OT143. fet MARKING MHp sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S

    BF998 depletion

    Abstract: BF988 bf988 sot 143 BF998
    Text: viSM A Y ▼ _ BF998/BF998R Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. A Applications Input- and mixer stages in UHF tuners. Features


    OCR Scan     		PDF BF998/BF998R BF998R) BF998 BF998R D-74025 20-Jan-99 BF998 depletion BF988 bf988 sot 143

    Untitled

    Abstract: No abstract text available
    Text: BF994S ymmt ▼ Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E le c tro s ta tic s e n s itiv e d e v ic e . O b s e rv e p re c a u tio n s fo r h a n d lin g . A Applications In p u t- an d m ix e r s ta g e s e s p e c ia lly V H F T V -tu n e rs .


    OCR Scan     		PDF BF994S 20-Jan-99

    mosfet marking code gg

    Abstract: marking g1s marking code g1s
    Text: 711002b G 0 b a ? n TTT H P H I N BF997 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television


    OCR Scan     		PDF 711002b BF997 OT143 mosfet marking code gg marking g1s marking code g1s

    Untitled

    Abstract: No abstract text available
    Text: bbS3T31 QDE473T fill « A P X N AKER PHILIPS/DISCRETE BF991 b?E D 7 V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.


    OCR Scan     		PDF bbS3T31 QDE473T BF991 OT143 OT103

    Marking G1s

    Abstract: No abstract text available
    Text: I bbS3131 [][]P3bP3 bat. • APX BF992R N AUER PHILIPS/DISCRETE L7E D yv SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143R microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended fo r use in VHF applications, such as VHF


    OCR Scan     		PDF bbS3131 BF992R OT143R Marking G1s

    BF998

    Abstract: No abstract text available
    Text: BF998/BF998R/BF998RW Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features • Integrated gate protection diodes


    OCR Scan     		PDF BF998/BF998R/BF998RW BF998 BF998R 23-Jun-99 BF998RW

    marking CODE M92

    Abstract: No abstract text available
    Text: • bbS3T31 0023blfi a n ■ APX BF992 N AUER PHI LIP S/ DIS CR ETE L7E D _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 m icrom iniature envelope w ith source and substrate interconnected. T his M O S-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.


    OCR Scan     		PDF bbS3T31 0023blfi BF992 0023b22 marking CODE M92